(cid:3)(cid:4)(cid:2)(cid:5)(cid:2)(cid:6)(cid:7)(cid:8)(cid:9)(cid:8) IRF9358PbF HEXFET(cid:2)(cid:2)Power MOSFET V -30 V DS S2 1 8 D2 R D DS(on) max 16.3 mΩ (@V = -10V) G2 2 7 D2 GS R DS(on) max 23.8 mΩ S1 3 6 D1 D (@V = -4.5V) GS G1 4 5 D1 Q 19 nC g (typical) SO-8 I D -9.2 A (@T = 25°C) A Applications • (cid:10)(cid:11)(cid:12)(cid:13)(cid:14)(cid:15)(cid:2)(cid:12)(cid:16)(cid:17)(cid:2)(cid:4)(cid:18)(cid:19)(cid:20)(cid:11)(cid:12)(cid:13)(cid:14)(cid:15)(cid:2)(cid:21)(cid:22)(cid:18)(cid:23)(cid:20)(cid:11)(cid:2)(cid:24)(cid:25)(cid:13)(cid:2)(cid:26)(cid:25)(cid:23)(cid:15)(cid:27)(cid:25)(cid:25)(cid:28)(cid:2)(cid:3)(cid:10)(cid:2)(cid:29)(cid:12)(cid:23)(cid:23)(cid:15)(cid:13)(cid:30)(cid:2)(cid:31) !(cid:18)(cid:20)(cid:12)(cid:23)(cid:18)(cid:25)(cid:16) Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen ⇒ Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9358PbF SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage -30 DS V V Gate-to-Source Voltage ± 20 GS ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -9.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -7.3 A I Pulsed Drain Current (cid:0) -73 DM P @T = 25°C Power Dissipation (cid:2) 2.0 D A W P @T = 70°C Power Dissipation (cid:2) 1.3 D A Linear Derating Factor 0.016 W/°C T Operating Junction and -55 to + 150 J °C T Storage Temperature Range STG Notes(cid:2)(cid:2) through (cid:2) are on page 2 www.irf.com 1 1/2/11

(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:4) Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250μA ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– 13.0 16.3 mΩ VGS = -10V, ID = -9.2A (cid:7) ––– 19.0 23.8 VGS = -4.5V, ID = -7.3A (cid:7) VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V V = V , I = -25μA ΔV Gate Threshold Voltage Coefficient ––– -5.9 ––– mV/°C DS GS D GS(th) IDSS Drain-to-Source Leakage Current ––– ––– -1.0 μA VDS = -24V, VGS = 0V ––– ––– -150 VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V gfs Forward Transconductance 23 ––– ––– S VDS = -10V, ID = -7.3A Qg Total Gate Charge (cid:0) ––– 19 ––– nC VDS = -15V, VGS = -4.5V, ID = - 7.3A Qg Total Gate Charge (cid:0) ––– 38 ––– VGS = -10V Qgs Gate-to-Source Charge (cid:0) ––– 5.8 ––– nC VDS = -15V Qgd Gate-to-Drain Charge (cid:0) ––– 8.9 ––– ID = -7.3A R Gate Resistance (cid:0) ––– 15 ––– Ω G td(on) Turn-On Delay Time ––– 5.7 ––– VDD = -15V, VGS = -4.5V (cid:7) tr Rise Time ––– 7.2 ––– ns ID = -1.0A td(off) Turn-Off Delay Time ––– 146 ––– RG = 6.8Ω t Fall Time ––– 69 ––– See Figs. 19a &19b f Ciss Input Capacitance ––– 1740 ––– VGS = 0V Coss Output Capacitance ––– 360 ––– pF VDS = -25V C Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy (cid:2) ––– 210 mJ I Avalanche Current (cid:3) ––– -7.3 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S ––– ––– -2.0 D (Body Diode) showing the A I Pulsed Source Current integral reverse G SM ––– ––– -73 (Body Diode)(cid:4)(cid:3) p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V (cid:7) trr Reverse Recovery Time ––– 55 83 ns TJ = 25°C, IF = -2.0A, VDD = -24V Qrr Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/μs (cid:7) Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead (cid:5) ––– 20 °C/W RθJA Junction-to-Ambient (cid:6) ––– 62.5 (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7) (cid:3)(cid:2)Repetitive rating; pulse width limited by max. junction temperature. (cid:4) (cid:2)Starting T = 25°C, L = 4.6mH, R = 25Ω, I = -6.4A. J G AS (cid:5) Pulse width ≤ 400μs; duty cycle ≤ 2%. (cid:6) When mounted on 1 inch square copper board. (cid:7) Rθ is measured at TJ of approximately 90°C. (cid:2) For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com

(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:4) 100 100 VGS VGS TOP -10V TOP -10V Aen()t 10 ----4333....5753VVVV Aen()t ----4333....5753VVVV Curr --32..07VV Curr 10 --32..07VV e BOTTOM -2.5V e BOTTOM -2.5V c c our 1 our S S o- o- na-ti na-ti 1 -2.5V Dr Dr , D 0.1 -2.5V , D -I -I ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C Tj = 150°C 0.01 0.1 0.1 1 10 100 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.6 ec ID = -9.2A an VGS = -10V A()ent TJ = 150°C Ressti 1.4 urr 10 On Ce ec d)1.2 oucr Sour eazli DSanor--- tI,iD 1 TJ = 25°V≤C6D0Sμ s= P-1U5LVSE WIDTH Dnoa-r-t, iRDSon() mNo(r 01..80 0.1 0.6 2 3 4 5 -60 -40 -20 0 20 40 60 80 100120140160 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 10000 14 VGS = 0V, f = 1 MHZ I = -7.3A D CCirssss == CCggsd + Cgd, Cds SHORTED Ve() 12 VVDS== --2145VV F) CCoss = Cds + Cgd Voagtl 10 VDDSS= -6.0V ep( iss ec 8 Capaanccti 1000 CCorssss Seoaou--rtt 6 C, G ,S 4 G V 2 - 0 100 0 10 20 30 40 50 1 10 100 QG Total Gate Charge (nC) -V , Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3

(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:4) 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) A) A) Cuenr(r t 10 TJ = 150°C Cuenrr(t 100 n e Dari oucr 10 eeevsr 1 TJ = 25°C Sano--ti DC 10msec 1msec R, DS Dr , D 1 T = 25°C -I -I A Tj = 150°C VGS = 0V Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 -V , Source-to-Drain Voltage (V) -V , Drain-to-Source Voltage (V) SD DS Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 10 2.5 V) 8 e( g Auenr()rt 6 Vadohot ll 2.0 ID = -25μA C s Danr i-I,D 24 Gheaert,t Sh() t 11..05 G V - 0 0.5 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TA , Ambient Temperature (°C) TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature Ambient Temperature 100 D = 0.50 W C/ 10 0.20 °) 0.10 A 0.05 J h Z t 1 0.02 e( 0.01 s n o ps 0.1 e R a l m er 0.01 SINGLE PULSE Notes: h T ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com

(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:4) Ω) 50 Ω) 50 me( ID = -9.2A me( c c n n a 40 a ssti ssti 40 e e R R n n O 30 O e e c c ur ur 30 o o So- 20 TJ = 125°C So- VGS = -4.5V n-t n-t ai ai Dr Dr 20 , n) 10 T = 25°C n), VGS = -10V o J o S( (S D D R 0 R 10 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60 70 -VGS, Gate -to -Source Voltage (V) -ID, Drain Current (A) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current 1000 1000 mJ) ID y( TOP -0.9A negr 800 BOTTOM--17..53AA W) 800 E he er( nc 600 wo 600 a P APueasv ll 400 Pueges ll 400 ge l Sni Sni 200 200 , S A E 0 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 25 50 75 100 125 150 Time (sec) Starting T , Junction Temperature (°C) J Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 15(cid:2)(cid:2)(cid:2)(cid:2)Typical Power vs. Time Driver Gate Drive (cid:8)(cid:9)(cid:10)(cid:9)(cid:11)(cid:12)(cid:3) Period D = P.W. + P.W. Period " (cid:5) (cid:13)(cid:15)(cid:11)(cid:8)(cid:7)(cid:15)(cid:9)(cid:12)(cid:16)(cid:17)(cid:18)(cid:10)(cid:7)(cid:9)(cid:12)(cid:13)(cid:10)(cid:5)(cid:19)(cid:15)(cid:6)(cid:14)(cid:11)(cid:17)(cid:9)(cid:15)(cid:10)(cid:5)(cid:19) VGS=10V • (cid:12)(cid:16)(cid:10)(cid:20)(cid:12)(cid:3)(cid:9)(cid:11)(cid:17)(cid:18)(cid:12)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:17)(cid:5)(cid:8)(cid:14) (cid:12)(cid:12) • (cid:2)(cid:11)(cid:10)(cid:7)(cid:5)(cid:6)(cid:12)(cid:21)(cid:22)(cid:17)(cid:5)(cid:14) - (cid:12)(cid:12) • (cid:16)(cid:10)(cid:20)(cid:12)(cid:16)(cid:14)(cid:17)(cid:23)(cid:17)(cid:24)(cid:14)(cid:12)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:17)(cid:5)(cid:8)(cid:14) (cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:13)(cid:7)(cid:11)(cid:11)(cid:14)(cid:5)(cid:9)(cid:12)(cid:25)(cid:11)(cid:17)(cid:5)(cid:19)(cid:26)(cid:10)(cid:11)(cid:27)(cid:14)(cid:11) D.U.T. ISDWaveform + (cid:4) Reverse (cid:6) Recovery Body Diode Forward - + Current Current - di/dt D.U.T. VDSWaveform Diode Recovery (cid:3) dv/dt VDD (cid:24) (cid:3)(cid:2) • (cid:6)(cid:15)(cid:28)(cid:6)(cid:9)(cid:12)(cid:8)(cid:10)(cid:5)(cid:9)(cid:11)(cid:10)(cid:22)(cid:22)(cid:14)(cid:6)(cid:12)(cid:29)(cid:18)(cid:12)(cid:30)(cid:2) (cid:31)(cid:31) Re-Applied • (cid:31)(cid:11)(cid:15) (cid:14)(cid:11)(cid:12)(cid:19)(cid:17)(cid:27)(cid:14)(cid:12)(cid:9)(cid:18)!(cid:14)(cid:12)(cid:17)(cid:19)(cid:12)(cid:31)"#"(cid:25)" + Voltage Body Diode Forward Drop • (cid:4)(cid:3)(cid:4)(cid:12)(cid:8)(cid:10)(cid:5)(cid:9)(cid:11)(cid:10)(cid:22)(cid:22)(cid:14)(cid:6)(cid:12)(cid:29)(cid:18)(cid:12)(cid:31)(cid:7)(cid:9)(cid:18)(cid:12)$(cid:17)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)%(cid:31)% - (cid:4)I(cid:5)n(cid:6)d(cid:7)u(cid:8)ct(cid:9)o(cid:10)r(cid:11) (cid:12)C(cid:13)u(cid:7)r(cid:11)e(cid:11)n(cid:14)t(cid:5)(cid:9) • (cid:31)"#"(cid:25)"(cid:12)&(cid:12)(cid:31)(cid:14) (cid:15)(cid:8)(cid:14)(cid:12)#(cid:5)(cid:6)(cid:14)(cid:11)(cid:12)(cid:25)(cid:14)(cid:19)(cid:9) Ripple ≤ 5% ISD "(cid:2)(cid:2)(cid:3)(cid:4)(cid:5)(cid:4)(cid:6)(cid:7)(cid:4)(cid:2)(cid:8)(cid:9)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13)(cid:14)(cid:2)(cid:9)(cid:15)(cid:2)(cid:16)(cid:17)(cid:18)(cid:17)(cid:19)(cid:2)(cid:15)(cid:9)(cid:6)(cid:2)(cid:8)(cid:20)(cid:21)(cid:22)(cid:11)(cid:23)(cid:23)(cid:4)(cid:10) "(cid:2)(cid:24)(cid:2)(cid:3)(cid:2)(cid:25)(cid:2)(cid:26)(cid:24)(cid:2)(cid:15)(cid:9)(cid:6)(cid:2)(cid:27)(cid:9)(cid:28)(cid:12)(cid:29)(cid:2)(cid:27)(cid:4)(cid:5)(cid:4)(cid:10)(cid:2)(cid:16)(cid:4)(cid:5)(cid:12)(cid:29)(cid:4)(cid:7) Fig 16. (cid:4)(cid:18)(cid:25)(cid:17)(cid:15)(cid:2)#(cid:15)$(cid:15)(cid:13)(cid:19)(cid:15)(cid:2)#(cid:15)(cid:20)(cid:25)$(cid:15)(cid:13)(cid:30)(cid:2)%(cid:15)(cid:19)(cid:23)(cid:2)(cid:10)(cid:18)(cid:13)(cid:20)&(cid:18)(cid:23)(cid:2)for P-Channel HEXFET(cid:2)(cid:2)Power MOSFETs www.irf.com 5

(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:4) Id Vds Vgs L VCC DUT 0 Vgs(th) 210KK SS Qgodr Qgd Qgs2 Qgs1 Fig 17a. Gate Charge Test Circuit Fig 17b. Gate Charge Waveform L VDS IAS RG D.U.T V DD IAS A (cid:2)-(cid:3)2(cid:2)0(cid:3)V DRIVER tp 0.01Ω tp V(BR)DSS 15V Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms (cid:3) (cid:31) (cid:24) (cid:31)(cid:3) td(on) tr td(off) tf (cid:24)(cid:2)(cid:3) VGS (cid:16)(cid:17)(cid:18)(cid:17)(cid:19)(cid:17) (cid:3) 10% (cid:2) - (cid:24) (cid:31)(cid:31) + (cid:20)(cid:24) (cid:2)(cid:3) 90% (cid:21)(cid:7)(cid:22)(cid:19)(cid:14)(cid:12)’(cid:15)(cid:6)(cid:9)((cid:12)≤ 1 )(cid:19) (cid:31)(cid:7)(cid:9)(cid:18)(cid:12)$(cid:17)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)≤ 0.1 % VDS Fig 19a. Switching Time Test Circuit Fig 19b. Switching Time Waveforms 6 www.irf.com

(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:4) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:7)(cid:8)(cid:9)(cid:10)(cid:8)(cid:11)(cid:12)(cid:6) (cid:3)(cid:13)(cid:14)(cid:15)(cid:16)(cid:17)(cid:12) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9) (cid:10)(cid:9) (cid:11)(cid:7)(cid:8)(cid:12)(cid:13)(cid:14) Dimensions are shown in milimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX A 5 A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c .0075 .0098 0.19 0.25 6 H D .189 .1968 4.80 5.00 E 0.25 [.010] A E .1497 .1574 3.80 4.00 1 2 3 4 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 6X e L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 K x 45° A C y 0.10 [.004] 8X b A1 8X L 8X c 7 0.25 [.010] C A B FOOTPRINT NOTES: 8X 0.72 [.028] 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK XXXX A = ASSEMBLY SITE CODE INTERNATIONAL F7101 RECTIFIER LOT CODE LOGO PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7

(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:4) SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information† Consumer †† Qualification level (per JEDEC JESD47F††† guidelines) MSL1 Moisture Sensitivity Level SO-8 (per JEDEC J-STD-020D†††) RoHS Compliant Yes (cid:3) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability (cid:3)(cid:3) Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ (cid:3)(cid:3)(cid:3) Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2011 8 www.irf.com

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: IRF9358TRPBF IRF9358PBF