PD - 95505 IRF8010PbF SMPS MOSFET Applications HEXFET(cid:1)(cid:1)Power MOSFET (cid:4) High frequency DC-DC converters (cid:4) UPS and Motor Control V R max I (cid:4) Lead-Free DSS DS(on) D (cid:1) 100V 15mΩ 80A Benefits (cid:4) Low Gate-to-Drain Charge to Reduce Switching Losses (cid:4) Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) (cid:4) Fully Characterized Avalanche Voltage and Current (cid:4) Typical R = 12mΩ TO-220AB DS(on) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 80(cid:2) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A IDM Pulsed Drain Current (cid:0) 320 PD @TC = 25°C Power Dissipation 260 W Linear Derating Factor 1.8 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt (cid:1) 16 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 1.1(10) Nm(cid:127) (lbf(cid:127)in) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.57 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Notes(cid:1)(cid:1)(cid:2)through (cid:3)(cid:2)are on page 8 www.irf.com 1 (cid:2)(cid:3)(cid:4)(cid:2)(cid:5)(cid:4)(cid:2)(cid:6)

IRF8010PbF Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 12 15 mΩ VGS = 10V, ID = 45A (cid:4) VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 V = 100V, V = 0V, T = 125°C DS GS J IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 V = -20V GS Dynamic @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 82 ––– ––– V V = 25V, I = 45A DS D Qg Total Gate Charge ––– 81 120 ID = 80A Qgs Gate-to-Source Charge ––– 22 ––– nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– 26 ––– VGS = 10V (cid:4) td(on) Turn-On Delay Time ––– 15 ––– VDD = 50V tr Rise Time ––– 130 ––– ID = 80A td(off) Turn-Off Delay Time ––– 61 ––– ns RG = 39Ω tf Fall Time ––– 120 ––– VGS = 10V (cid:4) Ciss Input Capacitance ––– 3830 ––– VGS = 0V Coss Output Capacitance ––– 480 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 59 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 3830 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 280 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 530 ––– VGS = 0V, VDS = 0V to 80V (cid:5) Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy(cid:0)(cid:1) ––– 310 mJ IAR Avalanche Current(cid:2)(cid:3) ––– 45 A EAR Repetitive Avalanche Energy (cid:3) ––– 26 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 80 MOSFET symbol D (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 320 integral reverse G (Body Diode)(cid:2)(cid:3)(cid:1) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 80A, VGS = 0V (cid:4) trr Reverse Recovery Time ––– 99 150 ns TJ = 150°C, IF = 80A, VDD = 50V Qrr Reverse RecoveryCharge ––– 460 700 nC di/dt = 100A/µs (cid:4) ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com

IRF8010PbF 10000 1000 VGS VGS TOP 15V TOP 15V 12V 12V CADSeneuounoca)(rrrt -- rt I,iD1101001000 BOTTOM 1655440.....05050VVVVVV 4.0V CDSAanoouueencr--rr()r t t I,iD 11000 BOTTOM 165544.....005050VVVVVV 20µs P4U.0LVSE WIDTH 20µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 0.1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.5 ID= 80A TJ = 175°C 3.0 )Α ( CDSanoouueencr--rrrt t i 11000 TJ = 25°C n-to-Source On Resistance (Normalized) 1122....0505 ,D Drai I 1 V20DµSs =P U50LVSE WIDTH R , DS(on) 0.5 V GS=10V 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

IRF8010PbF 100000 12 VGS = 0V, f = 1 MHZ ID= 80A CCCirssss === CCCggsd ++ CCgd, Cds SHORTED Ve() 10 VVDDSS== 8500VV 10000 oss ds gd g Fp) Ciss Vaotl 8 VDS= 20V e( e c c an ur 6 cti1000 So Capa Coss eo--t 4 C, Gat 100 , S Crss G 2 V 0 10 0 20 40 60 80 100 1 10 100 Q Total Gate Charge (nC) V , Drain-to-Source Voltage (V) G DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA 100 An()t 1000 LIMITED BY RDS(on) I , Reverse Drain Current (A)SD 1 10 T J = 175 ° C T J = 25 ° C DCSanooueuecr--rrr t I, iD110100 TTcj = = 1 2755°°CC 1110m0m0sµsesececc Single Pulse V G S = 0 V 0.1 0.1 0.0 0.5 1.0 1.5 2.0 1 10 100 1000 V ,Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

IRF8010PbF (cid:8) 80 (cid:7) (cid:1) (cid:1)(cid:2) LIMITED BY PACKAGE (cid:7) (cid:21)(cid:2) (cid:9)(cid:10)(cid:11)(cid:10)(cid:12)(cid:10) (cid:8) (cid:21) 60 +(cid:7) - (cid:1)(cid:1) nt (A) (cid:13)(cid:2)(cid:7) Curre 40 (cid:3)(cid:1)(cid:4)(cid:4)(cid:5)(cid:12)(cid:6)(cid:15)(cid:7)(cid:8)(cid:16)(cid:8)(cid:9)(cid:17)(cid:18)(cid:10)(cid:12)(cid:11)(cid:19)(cid:12)(cid:20)(cid:13)(cid:8)(cid:8)≤≤ 01. 1(cid:14) %(cid:6) n ai I , DrD Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( ° C) C 10% VGS Fig 9. Maximum Drain Current Vs. td(on) tr td(off) tf Case Temperature Fig 10b. Switching Time Waveforms 10 Z )thJC ( 1 e s D = 0.50 n o p Res 0.20 PDM mal 0.1 0.10 t1 her 0.05 t2 T SINGLE PULSE 00..0012 (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J=P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5

IRF8010PbF 15V 600 ID TOP 18A 500 32A VDS L DRIVER BOTTOM 45A J) m RG D.U.T +- VDD nergy ( 400 IAS A E 20V he 300 tp 0.01Ω nc a al v Fig 12a. Unclamped Inductive Test Circuit e A 200 s ul P e V(BR)DSS Singl 100 tp E , AS 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy IAS Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms CurrentRegulator SameTypeasD.U.T. Q G 50KΩ (cid:1)(cid:2)(cid:3)(cid:4) 12V .2µF .3µF Q Q GS GD + D.U.T. -VDS VG VGS 3mA Charge IG ID CurrentSamplingResistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com

IRF8010PbF (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:2)(cid:5)(cid:10)(cid:2)(cid:11)(cid:8)(cid:12)(cid:2)(cid:13)(cid:14)(cid:5)(cid:9)(cid:12)(cid:15)(cid:9)(cid:16)(cid:5)(cid:17)(cid:2)(cid:18)(cid:16)(cid:5)(cid:19)(cid:7)(cid:13)(cid:11)(cid:20)(cid:7)(cid:16) + ((cid:21)(cid:18)(cid:22)$(cid:21)(cid:28)(cid:1)(cid:19) (cid:31)(cid:17)$(cid:28)(cid:1)((cid:17)(cid:29)(cid:26)(cid:21)(cid:27)(cid:23)(cid:18) (cid:28)(cid:21)(cid:17)(cid:29)(cid:26) (cid:1)(cid:2)(cid:3)(cid:2)(cid:4) • (cid:1)(cid:19)(cid:17))(cid:1)*(cid:28)(cid:18) (cid:31)(cid:1)#(cid:29)(cid:27)$(cid:22)(cid:28) (cid:29)(cid:22)(cid:23) (cid:2) (cid:1)(cid:1) • +(cid:18)(cid:17)$(cid:29)(cid:27)(cid:1),(cid:25) (cid:29)(cid:23) (cid:1)(cid:1) • (cid:19)(cid:17))(cid:1)(cid:19)(cid:23) - (cid:20)(cid:23)(cid:1)#(cid:29)(cid:27)$(cid:22)(cid:28) (cid:29)(cid:22)(cid:23) (cid:1)(cid:1)(cid:1)(cid:1)(cid:1)(cid:1)($(cid:18)(cid:18)(cid:23)(cid:29)(cid:28)(cid:1)(cid:12)(cid:18) (cid:29)(cid:26)(cid:16)(cid:17)(cid:18)!(cid:23)(cid:18) - + (cid:4) (cid:3) - + - (cid:5) (cid:8)(cid:21) • (cid:27)(cid:24)(cid:4)(cid:27)(cid:28)(cid:1)(cid:22)(cid:17)(cid:29)(cid:28)(cid:18)(cid:17)(cid:25)(cid:25)(cid:23)(cid:27)(cid:1)(cid:30)(cid:31)(cid:1)(cid:8)(cid:21) + • (cid:9)(cid:18)(cid:21)(cid:24)(cid:23)(cid:18)(cid:1)(cid:26) !(cid:23)(cid:1)(cid:28)(cid:31)"(cid:23)(cid:1) (cid:26)(cid:1)(cid:9)(cid:10)(cid:11)(cid:10)(cid:12)(cid:10) - (cid:7)(cid:1)(cid:1) • #(cid:2)(cid:1)(cid:1)(cid:22)(cid:17)(cid:29)(cid:28)(cid:18)(cid:17)(cid:25)(cid:25)(cid:23)(cid:27)(cid:1)(cid:30)(cid:31)(cid:1)(cid:9)$(cid:28)(cid:31)(cid:1)% (cid:22)(cid:28)(cid:17)(cid:18)(cid:1)&(cid:9)& • (cid:9)(cid:10)(cid:11)(cid:10)(cid:12)(cid:10)(cid:1)’(cid:1)(cid:9)(cid:23)(cid:24)(cid:21)(cid:22)(cid:23)(cid:1)(cid:11)(cid:29)(cid:27)(cid:23)(cid:18)(cid:1)(cid:12)(cid:23)(cid:26)(cid:28) Driver Gate Drive P.W. Period D = P.W. Period V =10V (cid:5) GS D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. V Waveform DS Diode Recovery dv/dt V DD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD (cid:5)(cid:1)(cid:7) (cid:1)(cid:14)(cid:1)(cid:15)(cid:7)(cid:1)(cid:16)(cid:17)(cid:18)(cid:1)(cid:19)(cid:17)(cid:20)(cid:21)(cid:22)(cid:1)(cid:19)(cid:23)(cid:24)(cid:23)(cid:25)(cid:1)(cid:9)(cid:23)(cid:24)(cid:21)(cid:22)(cid:23)(cid:26) (cid:21)(cid:2) Fig 14. For N-Channel HEXFET(cid:1)(cid:3)Power MOSFETs www.irf.com 7

IRF8010PbF (cid:1)(cid:2)(cid:3)(cid:4)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:10)(cid:13)(cid:14)(cid:8)(cid:2)(cid:15)(cid:16)(cid:17)(cid:18)(cid:19)(cid:14) Dimensions are shown in millimeters (inches) 10.54 (.415) 3.78 (.149) - B - 2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185) 2.62 (.103) - A - 4.20 (.165) 1.32 (.052) 1.22 (.048) 6.47 (.255) 4 6.10 (.240) 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1 .1 5M I(N.045) HEL X E F A E 1DT -A GSASTIGEN MEINGTBSTs, CoPACK 1 2 3 1- G A T 2E - DRAIN 1- GATE 2- D R A 3I N- SOURCE2- COLLECTOR 3- S O U 4R - CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X11..4105 ((..005455)) 3X0.3006.. 96 (39.0 ((1..00432) 77 )) M B A M 2.932X (.001..154556) ((..002128)) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. (cid:1)(cid:2)(cid:3)(cid:4)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:20)(cid:16)(cid:8)(cid:21)(cid:10)(cid:20)(cid:12)(cid:18)(cid:19)(cid:13)(cid:8)(cid:22)(cid:19)(cid:23)(cid:24)(cid:20)(cid:25)(cid:10)(cid:16)(cid:18)(cid:24)(cid:19) EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER IN THE ASSEMBLY LINE "C" RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 ASSEMBLY LOT CODE WEEK 19 LINE C (cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) (cid:5)(cid:1)Repetitive rating; pulse width limited by (cid:3) Pulse width ≤ 300µs; duty cycle ≤ 2%. (cid:4) (cid:1)mStaaxr.t injugn cTtJio =n 2t5e°mCp, eLr a=tu 0r.e3.1mH, RG = 25Ω, (cid:6) Casos Cs oesfsf. wish iale f iVxeDdS icsa rpisaicnigta fnrocme t0h atot g8iv0e%s VthDeS Ss.ame charging time IAS = 45A. (cid:1) Calculated continuous current based on maximum allowable (cid:2)ISD ≤ 45A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, junction temperature. Package limitation current is 75A. TJ ≤ 175°C. TO-220 package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 8 www.irf.com

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/