(cid:2)(cid:3)(cid:1)(cid:4)(cid:1)(cid:5)(cid:6)(cid:7)(cid:8)(cid:5) IRF7853PbF HEXFET(cid:1)(cid:1)Power MOSFET Applications (cid:1) Primary Side Switch in Bridge Topology V R max I DSS DS(on) D in Universal Input (36-75Vin) Isolated 100V 18m(cid:1)@VGS = 10V 8.3A DC-DC Converters (cid:1) Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters A A (cid:1) Secondary Side Synchronous S 1 8 D Rectification Switch for 15Vout S 2 7 D (cid:1) Suitable for 48V Non-Isolated S 3 6 D Synchronous Buck DC-DC Applications G 4 5 D Benefits (cid:1) Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses (cid:1) Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) (cid:1) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 V DS V Gate-to-Source Voltage ± 20 GS ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 8.3 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 6.6 IDM Pulsed Drain Current (cid:0) 66 PD @TA = 25°C Maximum Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C dv/dt Peak Diode Recovery dv/dt (cid:1) 5.1 V/ns TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead ––– 20 °C/W θJL R Junction-to-Ambient (PCB Mount) (cid:2)(cid:3) ––– 50 θJA Notes(cid:1)(cid:1)(cid:2)through (cid:1) are on page 8 www.irf.com 1 1/5/06

IRF7853PbF Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 ––– ––– V V = 0V, I = 250µA (BR)DSS GS D ∆V /∆T Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance ––– 14.4 18 mΩ V = 10V, I = 8.3A (cid:4) DS(on) GS D V Gate Threshold Voltage 3.0 ––– 4.9 V V = V , I = 100µA GS(th) DS GS D I Drain-to-Source Leakage Current ––– ––– 20 µA V = 100V, V = 0V DSS DS GS ––– ––– 250 V = 100V, V = 0V, T = 125°C DS GS J I Gate-to-Source Forward Leakage ––– ––– 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage ––– ––– -100 V = -20V GS Dynamic @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 ––– ––– S V = 25V, I = 5.0A DS D Q Total Gate Charge ––– 28 39 I = 5.0A g D Q Gate-to-Source Charge ––– 7.8 ––– nC V = 50V gs DS Q Gate-to-Drain ("Miller") Charge ––– 10 ––– V = 10V (cid:4) gd GS R Gate Resistance ––– 1.4 ––– Ω G t Turn-On Delay Time ––– 13 ––– V = 50V d(on) DD t Rise Time ––– 6.6 ––– I = 5.0A r D t Turn-Off Delay Time ––– 26 ––– ns R = 6.2Ω d(off) G t Fall Time ––– 6.0 ––– V = 10V (cid:4) f GS C Input Capacitance ––– 1640 ––– V = 0V iss GS C Output Capacitance ––– 310 ––– V = 25V oss DS C Reverse Transfer Capacitance ––– 71 ––– pF ƒ = 1.0MHz rss C Output Capacitance ––– 1600 ––– V = 0V, V = 1.0V, ƒ = 1.0MHz oss GS DS C Output Capacitance ––– 180 ––– V = 0V, V = 80V, ƒ = 1.0MHz oss GS DS C eff. Effective Output Capacitance ––– 320 ––– V = 0V, V = 0V to 80V (cid:3) oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy(cid:0) ––– 610 mJ AS I Avalanche Current(cid:1)(cid:2) ––– 5.0 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 2.3 MOSFET symbol D (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 66 integral reverse G (Body Diode)(cid:1)(cid:2) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.0A, VGS = 0V (cid:4) trr Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 5.0A, VDD = 25V Qrr Reverse Recovery Charge ––– 84 130 nC di/dt = 100A/µs (cid:4) ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com

IRF7853PbF 100 100 VGS VGS TOP 15V TOP 15V Aen()t 10 1876...0000VVVV Aen()t 1876...0000VVVV Ceurr BOTTOM 554...505VVV Ceurr 10 BOTTOM 554...505VVV c c ur 1 ur o o S S o- o- n-t n-t 1 4.5V ai ai Dr 0.1 Dr , D , D I I ≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH 4.5V Tj = 25°C Tj = 150°C 0.01 0.1 0.01 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 2.5 ec ID = 8.3A n )Α ast VGS = 10V Cuenrrt ( 10.0 TJ = 150°C ORens i 2.0 e e d) Soucr Soucr maezli 1.5 Doan--rtI, iD 01..10 V≤ D60SµT =sJ P2=5 U2VL5S°CE WIDTH Dnoa--rt, iRDSon() No(r 1.0 0.5 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3

IRF7853PbF 100000 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED ID= 5.0A Crss = Cgd Ve() 16 VVDDSS== 5800VV 10000 Coss = Cds + Cgd ag VDS= 20V F) otl p V e( e 12 anccti 1000 Ciss Suocr CCapa, Coss Gaeo--tt 8 100 Crss , GS 4 V 0 10 0 10 20 30 40 50 1 10 100 V , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) DS Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 100.0 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) A) A) Cuenrr(t 10.0 TJ = 150°C Cuen(rrt 100 100µsec Danr i eoucr 10 es So- 1msec Reev, rDS 1.0 TJ = 25°C Dan-rt, iD 1 10msec I I Tc = 25°C Tj = 150°C VGS = 0V Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 1 10 100 1000 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

IRF7853PbF 10 (cid:2) (cid:1) (cid:1) (cid:1)(cid:2) 8 (cid:1)(cid:21)(cid:2) (cid:3)(cid:4)(cid:5)(cid:4)(cid:6)(cid:4) A) (cid:2)(cid:21) n(t +-(cid:1)(cid:1)(cid:1) e 6 Curr (cid:7)(cid:8)(cid:1) n ai (cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:8)≤ 1 (cid:14)(cid:6) Dr 4 (cid:1)(cid:4)(cid:12)(cid:15)(cid:8)(cid:16)(cid:17)(cid:18)(cid:12)(cid:19)(cid:20)(cid:8)≤ 0.1 % , D I Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , CaseTemperature (°C) 10% Fig 9. Maximum Drain Current vs. VGS Ambient Temperature td(on) tr td(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 10 0.20 ) A 0.10 J h Z t 0.05 ens( 1 00..0021 R1R1 R2R2 R3R3 Ri (°C/W) τi (sec) pos τJτJ τ(cid:1)Cτ 7.016 0.00474 mRae l 0.1 τ1Cτ1i= τi/Ri τ2τ2 τ3τ3 2166..9054 02..034671095 er Ci τi/Ri h T 0.01 Notes: SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = Pdm x Zthja + Ta 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5

IRF7853PbF )Ω 40 m)Ω 40 mance( VGS = 10V neacs( t 35 ID = 5.0A st si Rnes i 30 TC = 125°C ORne 30 TJ = 125°C O e ec ucr 25 our So DSano, r-t-in) 20 TC = 25°C Dnanoo)r-- , ti 1250 TJ = 25°C So( (DS 10 D R R 10 4 6 8 10 12 14 16 0 10 20 30 40 50 60 70 VGS, Gate-to-Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage (cid:2) QG L (cid:1)(cid:2) DUT VCC QGS QGD 2500 0 1K VG mJ) ID y( TOP 0.23A Charge egr 2000 0.34A n BOTTOM 5.0A E e Fig 14a&b. Basic Gate Charge Test Circuit h nc 1500 and Waveform a al v A e s 1000 ul P 15V e gl n V(BR)DSS Si 500 tp VDS L DRIVER S, A E RG D.U.T + 0 IAS -VDDA 25 50 75 100 125 150 20V tp 0.01Ω IAS Starting TJ, Junction Temperature (°C) Fig 15c. Maximum Avalanche Energy Fig 15a&b. Unclamped Inductive Test circuit vs. Drain Current and Waveforms 6 www.irf.com

IRF7853PbF SO-8 Package Details INCHES MILLIMETERS DIM D B MIN MAX MIN MAX A 5 A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c .0075 .0098 0.19 0.25 6 H D .189 .1968 4.80 5.00 E 0.25 [.010] A E .1497 .1574 3.80 4.00 1 2 3 4 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 6X e L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 K x 45° A C y 0.10 [.004] 8X b A1 8X L 8X c 0.25 [.010] C A B 7 FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW = WEEK INTERNATIONAL F7101 A = ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO PART NUMBER www.irf.com 7

IRF7853PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:2)(cid:9)Repetitive rating; pulse width limited by (cid:5) Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (cid:6) Coss eff. is a fixed capacitance that gives the same charging time (cid:3) (cid:9)Starting TJ = 25°C, L = 49mH, as Coss while VDS is rising from 0 to 80% VDSS. (cid:4) WRGh e=n 2 m5Ωou, nIAteSd = o 5n. 01A i.nch square copper (cid:7)(cid:1) RISθD i≤s 5m.0eAa,s udri/eddt ≤a t3 (cid:1)20(cid:1)(cid:2)A(cid:3)/(cid:4)µ(cid:2)(cid:5)s(cid:6), V(cid:6)(cid:7)D(cid:3)D(cid:8) ≤(cid:9)(cid:10) V(cid:5)(B(cid:11)R(cid:12))(cid:13)D(cid:14)S(cid:2)(cid:15)S,(cid:16) T(cid:17)(cid:18)J ≤(cid:19) 150°C. board, t ≤ 10 sec. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/06 8 www.irf.com

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: IRF7853TRPBF IRF7853PBF