(cid:2)(cid:3)(cid:1)(cid:4)(cid:1)(cid:5)(cid:6)(cid:7)(cid:8)(cid:8) IRF7495PbF HEXFET(cid:1)(cid:1)Power MOSFET V R max I Applications DSS DS(on) D (cid:1) High frequency DC-DC converters 100V 22m(cid:0)@V = 10V 7.3A (cid:1) Lead-Free GS Benefits A (cid:1) Low Gate to Drain Charge to Reduce A S 1 8 D Switching Losses (cid:1) Fully Characterized Capacitance Including S 2 7 D Effective COSS to Simplify Design, (See S 3 6 D App. Note AN1001) G 4 5 D (cid:1) Fully Characterized Avalanche Voltage and Current Top View SO-8 Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.3 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 4.6 IDM Pulsed Drain Current (cid:0) 58 PD @TA = 25°C Maximum Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C dv/dt Peak Diode Recovery dv/dt (cid:1) 7.3 V/ns TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 °C/W RθJA Junction-to-Ambient (PCB Mount) (cid:2) ––– 50 Notes(cid:1)(cid:1)(cid:2)through (cid:3) are on page 8 www.irf.com 1 9/21/04

IRF7495PbF Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 18 22 mΩ VGS = 10V, ID = 4.4A (cid:3) VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 V = 80V, V = 0V, T = 125°C DS GS J IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 V = -20V GS Dynamic @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 ––– ––– S V = 25V, I = 4.4A DS D Qg Total Gate Charge ––– 34 51 ID = 4.4A Qgs Gate-to-Source Charge ––– 6.3 ––– nC VDS = 50V Qgd Gate-to-Drain ("Miller") Charge ––– 11.7 ––– VGS = 10V (cid:3) td(on) Turn-On Delay Time ––– 8.7 ––– VDD = 50V tr Rise Time ––– 13 ––– ID = 4.4A td(off) Turn-Off Delay Time ––– 10 ––– ns RG = 6.2Ω tf Fall Time ––– 36 ––– VGS = 10V (cid:3) Ciss Input Capacitance ––– 1530 ––– VGS = 0V Coss Output Capacitance ––– 250 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 980 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 160 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 240 ––– VGS = 0V, VDS = 0V to 80V (cid:4) Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy(cid:0) ––– 180 mJ IAR Avalanche Current(cid:1)(cid:2) ––– 4.4 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 2.3 MOSFET symbol D (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 58 integral reverse G (Body Diode)(cid:1)(cid:2) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.4A, VGS = 0V (cid:3) trr Reverse Recovery Time ––– 42 ––– ns TJ = 25°C, IF = 4.4A, VDD = 25V Qrr Reverse Recovery Charge ––– 73 ––– nC di/dt = 100A/µs (cid:3) ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com

IRF7495PbF 100 100 VGS VGS TOP 15V TOP 15V 10V 10V 8.0V 8.0V A) BOTTOM 54..05VV A) 4.5V BOTTOM 54..05VV n(t 4.5V n(t e e urr urr C C e e ucr 10 ucr 10 o o S S o- o- n-t n-t ai ai Dr Dr , D , D I I 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 150°C 1 1 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ec ID = 7.3A n )Α T = 150°C ast VGS = 10V ( J si nt Re 2.0 CSouueecrrr 10 T = 25°C OSnoouec-r maedz)il 1.5 Danor-- tI,iD 1 V2J0D µSs =P U50LVSE WIDTH Danr-, tiRDSon() No(r 1.0 0.1 0.5 2 3 4 5 -60 -40 -20 0 20 40 60 80 100120140160180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3

IRF7495PbF 100000 12.0 VGS = 0V, f = 1 MHZ I = 4.4A D C = C + C , C SHORTED iss gs gd ds Crss = Cgd V) 10.0 VDS= 80V 10000 Coss = Cds + Cgd e( VDS= 50V g Fp) oatl 8.0 VDS= 20V aanecc(ti1000 Ciss VSouecr 6.0 CCap, Coss aeo--tt 4.0 100 Crss G, S G V 2.0 10 0.0 1 10 100 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 100.00 1000 OPERATION IN THIS AREA LIMITED BY R (on) A) A) DS n(t 10.00 n( t100 uerr TJ = 150°C uerr C C n e Dari 1.00 oucr 10 100µsec e S Reevsr ,DS 0.10 TJ = 25°C Doanr-- t,iD 1 TA = 25°C 1msec I I Tj = 150°C 10msec VGS = 0V Single Pulse 0.01 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1 10 100 1000 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

IRF7495PbF 8 (cid:2) (cid:1) (cid:1) (cid:1)(cid:2) 7 (cid:1) (cid:21)(cid:2) (cid:3)(cid:4)(cid:5)(cid:4)(cid:6)(cid:4) 6 (cid:2) An()t 5 (cid:21) +-(cid:1)(cid:1)(cid:1) e urr (cid:7)(cid:8)(cid:1) C 4 n (cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:8)≤ 1 (cid:14)(cid:6) ai (cid:1)(cid:4)(cid:12)(cid:15)(cid:8)(cid:16)(cid:17)(cid:18)(cid:12)(cid:19)(cid:20)(cid:8)≤ 0.1 % Dr 3 ,D I 2 Fig 10a. Switching Time Test Circuit 1 VDS 90% 0 25 50 75 100 125 150 TA , Ambient Temperature (°C) 10% Fig 9. Maximum Drain Current vs. VGS Ambient Temperature td(on) tr td(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 )A 10 0.20 J h Z t 0.10 e( 0.05 s n o 1 0.02 p s 0.01 e R a l m er 0.1 h T SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5

IRF7495PbF )Ω 25 )Ω 50 m m e( e( c c n n a a ssti ssti 40 e e R 20 R On VGS = 10V On e e ucr ucr 30 o o S S Doanr--ti 15 Danor--t i 20 ID = 4.4A , Son() , Son() D D R 10 R 10 0 10 20 30 40 50 60 70 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage (cid:2) QG L (cid:1)(cid:2) DUT VCC QGS QGD 500 0 1K mJ) ID VG y( TOP 2.0A Charge Enegr 400 BOTTOM34..54AA e h Fig 14a&b. Basic Gate Charge Test Circuit nc 300 and Waveform aal v A e s 200 ul P e 15V gl n Si 100 tp V(BR)DSS VDS L DRIVER ,S A E RG D.U.T + 0 IAS -VDDA 25 50 75 100 125 150 20V IAS tp 0.01Ω Starting TJ , Junction Temperature (°C) Fig 15c. Maximum Avalanche Energy Fig 15a&b. Unclamped Inductive Test circuit vs. Drain Current and Waveforms 6 www.irf.com

IRF7495PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX A 5 A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c .0075 .0098 0.19 0.25 6 H D .189 .1968 4.80 5.00 E 0.25 [.010] A E .1497 .1574 3.80 4.00 1 2 3 4 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 6X e L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 K x 45° A C y 0.10 [.004] 8X b A1 8X L 8X c 0.25 [.010] C A B 7 FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW = WEEK INTERNATIONAL F7101 A = ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO PART NUMBER www.irf.com 7

IRF7495PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:1)(cid:9)Repetitive rating; pulse width limited by (cid:4) Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (cid:5) Coss eff. is a fixed capacitance that gives the same charging time (cid:2) (cid:9)Starting TJ = 25°C, L = 19mH as Coss while VDS is rising from 0 to 80% VDSS. (cid:3) WRGh e=n 2 m5Ωou, nIAteSd = o4n. 41A i.nch square copper (cid:6)ISD ≤ 5.8A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. board, t ≤ 10 sec. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com

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