(cid:2)(cid:3)(cid:4)(cid:1)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9) IRF7478PbF SMPS MOSFET HEXFET(cid:1)(cid:1)Power MOSFET Applications V R max (m(cid:1)(cid:2) I DSS DS(on) D (cid:4) High frequency DC-DC converters 60V 26@V = 10V 4.2A (cid:4) Lead-Free GS 30@V = 4.5V 3.5A GS Benefits A A (cid:4) Low Gate to Drain Charge to Reduce S 1 8 D Switching Losses S 2 7 D (cid:4) Fully Characterized Capacitance Including Effective C to Simplify Design, (See S 3 6 D OSS App. Note AN1001) G 4 5 D (cid:4) Fully Characterized Avalanche Voltage SO-8 Top View and Current Absolute Maximum Ratings Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ 10V 7.0 D A GS I @ T = 70°C Continuous Drain Current, V @ 10V 5.6 A D A GS I Pulsed Drain Current (cid:1) 56 DM P @T = 25°C Power Dissipation(cid:2) 2.5 W D A Linear Derating Factor 0.02 W/°C V Gate-to-Source Voltage ± 20 V GS dv/dt Peak Diode Recovery dv/dt (cid:3) 3.7 V/ns T Operating Junction and -55 to + 150 J TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient (cid:1) ––– 50 °C/W Notes(cid:1)(cid:1)(cid:2)through (cid:3) are on page 8 www.irf.com 1 09/21/04

IRF7478PbF Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA ––– 20 26 VGS = 10V, ID = 4.2A(cid:5)(cid:2) RDS(on) Static Drain-to-Source On-Resistance ––– 23 30 mΩ VGS = 4.5V, ID = 3.5A(cid:5)(cid:2) VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA I Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 48V, VGS = 0V DSS ––– ––– 100 VDS = 48V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Dynamic @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 4.2A Qg Total Gate Charge ––– 21 31 ID = 4.2A Qgs Gate-to-Source Charge ––– 4.3 ––– nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– 9.6 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 7.7 ––– VDD = 30V tr Rise Time ––– 2.6 ––– ns ID = 4.2A td(off) Turn-Off Delay Time ––– 44 ––– RG = 6.2Ω tf Fall Time ––– 13 ––– VGS = 10V(cid:5)(cid:6) Ciss Input Capacitance ––– 1740 ––– VGS = 0V Coss Output Capacitance ––– 300 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1590 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 220 ––– VGS = 0V, VDS = 48V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 410 ––– VGS = 0V, VDS = 0V to 48V (cid:7) Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy(cid:8) ––– 140 mJ AS I Avalanche Current(cid:1) ––– 4.2 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 2.3 MOSFET symbol D (Body Diode) showing the (cid:1) ISM Pulsed Source Current ––– ––– 56 integral reverse G (Body Diode) (cid:1) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.2A, VGS = 0V(cid:5)(cid:6) trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 4.2A Qrr Reverse RecoveryCharge ––– 100 150 nC di/dt = 100A/µs(cid:1)(cid:6) 2 www.irf.com

IRF7478PbF 100 100 VGS VGS TOP 15V TOP 15V 10V 10V A) 43..57VV A) 43..57VV nt ( 33..53VV nt ( 33..53VV e 3.0V e 3.0V urr BOTTOM2.7V urr BOTTOM2.7V C C e e c c ur ur o 10 o 10 S S 2.7V o- o- n-t n-t ai ai Dr Dr I , D 2.7V I , D 20µs PULSE WIDTH 20µs PULSE WIDTH T J = 25°C T J = 150°C 1 1 0.1 1 10 100 0.1 1 10 100 VD S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ID=7.0A e c n a )Α( TJ = 150°C sist 2.0 n t Re Cueerr ce On zed) 1.5 Sonouc--rt 10 TJ = 25°C n-to-Sour(Normali 1.0 ai ai Dr Dr I, D 1 V20DµSs =P U25LVSE WIDTH R , DS(on) 0.5 VGS=10V 0.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V , Gate-to-Source Voltage (V) T J , Junction Temperature( ° C) GS Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

IRF7478PbF 100000 10 VGS = 0V, f = 1 MHZ ID=4.2A Ciss = Cgs + Cgd, Cds SHORTED VDS= 48V CCrss == CCgd + C e (V) 8 VVDDSS== 1320VV 10000 oss ds gd g a Fepc() Ciss e Volt 6 n c acti1000 our a S CCap, Coss ate-to- 4 100 G Crss V , GS 2 10 0 1 10 100 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A) ent ( TJ = 150 ° C A)A) 100 ain Curr 10 urrent (urrent ( 10us se Dr ain Cain C 10 100us er DrDr 1ms I , RevSD 1 TJ = 25 ° C I , I , D 1 TA= 25 ° C 10ms TJ= 150 ° C V G S = 0 V Single Pulse 0.1 0.1 0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000 V S D ,Source-to-Drain Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

IRF7478PbF 8.0 (cid:3) (cid:1) (cid:2) (cid:1)(cid:2) (cid:2) (cid:21)(cid:2) (cid:4)(cid:5)(cid:6)(cid:5)(cid:7)(cid:5) 6.0 A) (cid:3)(cid:21) nt ( +-(cid:2)(cid:1)(cid:1) e urr (cid:8)(cid:9)(cid:2) C 4.0 n (cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:8)≤ 1 (cid:14)(cid:6) ai (cid:1)(cid:4)(cid:12)(cid:15)(cid:8)(cid:16)(cid:17)(cid:18)(cid:12)(cid:19)(cid:20)(cid:8)≤ 0.1 % Dr I , D2.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 T , Case Temperature ( ° C) C Fig 9. Maximum Drain Current Vs. 10% Ambient Temperature VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 ) Z thJA 10 00..1200 ( e 0.05 s n o 0.02 p 1 es 0.01 al R PDM m SINGLE PULSE t1 her 0.1 (THERMAL RESPONSE) t2 T Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ=PDMx ZthJA + TA 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5

IRF7478PbF Ω) 0.028 )Ω 0.04 ec( e( n 0.026 c a n essti assti R e On 0.024 VGS = 4.5V ORn 0.03 ouecr 0.022 e oucr S S Dnoar--ti 0.020 Danor--t i 0.02 ID = 7.0A on(), S 0.018 VGS = 10V ,Son() D D R 0.016 R 0.01 0 10 20 30 40 50 60 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage CurrentRegulator SameTypeasD.U.T. (cid:2) QG 50KΩ (cid:1)(cid:2) 12V .2µF .3µF QGS QGD + 400 D.U.T. -VDS VG J) ID m TOP 1.9A VGS 3mA Charge rgy ( BOTTOM 34..42AA IG ID ne 300 CurrentSamplingResistors E e h Fig 14a&b. Basic Gate Charge Test Circuit nc a and Waveform al 200 v A e s ul P 15V e 100 gl n V(BR)DSS Si tp RGVDS D.UL.T DRIVE+R E , AS 0 IAS -VDDA 25 50 75 100 125 150 20V Starting T , Junction Temperature( ° C) tp 0.01Ω J IAS Fig 15c. Maximum Avalanche Energy Fig 15a&b. Unclamped Inductive Test circuit Vs. Drain Current and Waveforms 6 www.irf.com

IRF7478PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX A 5 A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c .0075 .0098 0.19 0.25 6 H D .189 .1968 4.80 5.00 E 0.25 [.010] A E .1497 .1574 3.80 4.00 1 2 3 4 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 6X e L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 K x 45° A C y 0.10 [.004] 8X b A1 8X L 8X c 0.25 [.010] C A B 7 FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW = WEEK INTERNATIONAL F7101 A = ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO PART NUMBER www.irf.com 7

IRF7478PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:3)(cid:10)Repetitive rating; pulse width limited by (cid:1) When mounted on 1 inch square copper board max. junction temperature. (cid:5) Coss eff. is a fixed capacitance that gives the same charging time (cid:4) (cid:10)Starting TJ = 25°C, L = 16mH as Coss while VDS is rising from 0 to 80% VDSS RG = 25Ω, IAS = 4.2A. (cid:6)ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, (cid:2) Pulse width ≤ 400µs; duty cycle ≤ 2%. TJ ≤ 150°C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com

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