IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt rating V (V) 400 V DS • Repetitive avalanche rated Available RDS(on) (Ω) VGS = 10 V 1.8 RoHS* • Fast switching Qg (Max.) (nC) 20 COMPLIANT Q (nC) 3.3 • Ease of paralleling gs Q (nC) 11 • Simple drive requirements gd Configuration Single • Material categorization: for definitions of compliance D please see www.vishay.com/doc?99912 Note TO-220AB * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. G DESCRIPTION S Third generation power MOSFETs from Vishay provide the GD S designer with the best combination of fast switching, ruggedized device design, low on-resistance and N-Channel MOSFET cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF720PbF Lead (Pb)-free SiHF720-E3 IRF720 SnPb SiHF720 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 400 V DS Gate-Source Voltage V ± 20 V GS T = 25 °C 3.3 C Continuous Drain Current V at 10 V I GS D T = 100 °C 2.1 A C Pulsed Drain Currenta I 13 DM Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energy b E 190 mJ AS Repetitive Avalanche Current a I 3.3 A AR Repetitive Avalanche Energy a E 5.0 mJ AR Maximum Power Dissipation T = 25 °C P 50 W C D Peak Diode Recovery dV/dt c dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg °C Soldering Recommendations (Peak Temperature) d for 10 s 300 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 °C, L = 30 mH, R = 25 Ω, I = 3.3 A (see fig. 12). DD J g AS c. I ≤ 3.3 A, dI/dt ≤ 65 A/μs, V ≤ V , T ≤ 150 °C. SD DD DS J d. 1.6 mm from case. S14-2355-Rev. C, 08-Dec-14 1 Document Number: 91043 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF720, SiHF720 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - °C/W thCS Maximum Junction-to-Case (Drain) R - 2.5 thJC SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 μA 400 - - V DS GS D V Temperature Coefficient ΔV /T Reference to 25 °C, I = 1 mA - 0.51 - V/°C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 μA 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 - - ± 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I μA DSS V = 320 V, V = 0 V, T = 125 °C - - 250 DS GS J Drain-Source On-State Resistance R V = 10 V I = 2.0 A b - - 1.8 Ω DS(on) GS D Forward Transconductance g V = 50 V, I = 2.0 A b 1.7 - - S fs DS D Dynamic Input Capacitance C - 410 - iss V = 0 V, GS Output Capacitance C V = 25 V, - 120 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 47 - rss Total Gate Charge Q - - 20 g I = 3.3 A, D Gate-Source Charge Q V = 10 V V = 320 V, - - 3.3 nC gs GS DS see fig. 6 and 13 b Gate-Drain Charge Q - - 11 gd Turn-On Delay Time t - 10 - d(on) Rise Time t - 14 - r VDD = 200 V, ID = 3.3 A ns Turn-Off Delay Time td(off) Rg = 18 Ω, RD = 56 Ω, see fig. 10 b - 30 - Fall Time t - 13 - f Internal Drain Inductance LD Between lead, D - 4.5 - 6 mm (0.25") from package and center of nH Internal Source Inductance L die contact G - 7.5 - S S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I MOSFET symbol D - - 3.3 S showing the A integral reverse G Pulsed Diode Forward Current a ISM p - n junction diode S - - 13 Body Diode Voltage V T = 25 °C, I = 3.3 A, V = 0 V b - - 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 270 600 ns rr T = 25 °C, I = 3.3 A, dI/dt = 100 A/μs b J F Body Diode Reverse Recovery Charge Q - 1.4 3.0 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. S14-2355-Rev. C, 08-Dec-14 2 Document Number: 91043 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF720, SiHF720 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) e 3.5 101 VGS nc ID = 3.3 A Top 1150 VV sta 3.0 VGS = 10 V A) 87..00 VV Resi Current ( 100 Bottom6554....0505 VVVV urce On alized) 22..05 , Drain D 10-1 4.5 V ain-to-So(Norm 11..05 I Dr 20 µs Pulse Width , n) 0.5 o 10-2 TC = 25 °C RDS( 0.0 10-1 100 101 - 60- 40- 20 0 20 40 60 80 100120140160 91043_01 VDS, Drain-to-Source Voltage (V) 91043_04 TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature C 101 1000 VGS VGS = 0 V, f = 1 MHz Top 15 V C = C + C , C Shorted iss gs gd ds 10 V C = C 800 rss gd 8.0 V C = C + C urrent (A) 100 7655....0050 VVVV 4.5 V nce (pF) 600 Coissss ds gd Drain C 10-1 Bottom4.5 V apacita 400 Coss I, D C 200 Crss 20 µs Pulse Width T = 150 °C 10-2 C 0 10-1 100 101 100 101 91043_02 VDS, Drain-to-Source Voltage (V) 91043_05 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, T = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage C 10 20 TJ= 25 °C V) ID = 3.3 A A) TJ= 150 °C ge ( 16 VDS = 320 V ce Current ( 1 urce Volta 12 VDS = V80D SV = 200 V our So n-to-S 0.1 e-to- 8 I, DraiD , GatS 4 VG For test circuit V = 26.2V see figure 13 0.01 DS 0 4 5 6 7 8 9 10 0 5 10 15 20 25 V , Gate-to-Source Voltage (V) GS 91043_06 QG, Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S14-2355-Rev. C, 08-Dec-14 3 Document Number: 91043 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF720, SiHF720 www.vishay.com Vishay Siliconix 3.5 101 A) 3.0 nt ( Curre nt (A) 2.5 ain 150 °C urre 2.0 Dr 100 C se 25 °C ain 1.5 er Dr Rev I, D 1.0 , SD 0.5 I V = 0 V GS 10-1 0.0 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 91043_07 VSD, Source-to-Drain Voltage (V) 91043_09 TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature R 102 D 5 Operation in this area limited V DS by R 2 DS(on) VGS D.U.T. ent (A) 105 11000 µ µss RG +- VDD Curr 12 1 ms 10 V n 5 Pulse width ≤ 1 µs Drai 2 10 ms Duty factor ≤ 0.1 % , D 0.1 I Fig. 10a - Switching Time Test Circuit 5 T = 25 °C C 2 TJ = 150 °C V Single Pulse DS 10-2 90 % 0.1 2 5 1 2 5 10 2 5 102 2 5 103 91043_08 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 10 % V GS t t t t d(on) r d(off) f Fig. 10b - Switching Time Waveforms 10 )C hJ e (Zt 1 0 − 0.5 s on 0.2 esp 0.1 PDM R 0.05 mal 0.1 0.02 t1 Ther 0.01 S(Tinhgelrem Paul lRseesponse) Notes: t2 1. Duty Factor, D = t/t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91043_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S14-2355-Rev. C, 08-Dec-14 4 Document Number: 91043 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF720, SiHF720 www.vishay.com Vishay Siliconix L V DS Vary tp to obtain QG required IAS VGS RG D.U.T + QGS QGD V - DD I AS V G 10 V t 0.01 Ω p Charge Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. V DS 50 kΩ t p 12 V 0.2 µF VDD 0.3 µF + V D.U.T. - DS V DS V GS I 3 mA AS I I G D Current sampling resistors Fig. 12b - Unclamped Inductive Waveforms Fig. 13b - Gate Charge Test Circuit 500 I D J) Top 1.5 A y (m 400 Bottom 23..13 AA g er En 300 e s ul e P 200 gl n Si , S 100 A E V = 50 V 0 DD 25 50 75 100 125 150 91043_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S14-2355-Rev. C, 08-Dec-14 5 Document Number: 91043 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF720, SiHF720 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129) Driver same type as D.U.T. V - DD (cid:129) ISD controlled by duty factor “D” (cid:129) D.U.T. - device under test Driver gate drive Period D = P.W. P.W. Period V = 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = 5 V for logic level devices GS Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91043. S14-2355-Rev. C, 08-Dec-14 6 Document Number: 91043 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-220-1 A MILLIMETERS INCHES E DIM. MIN. MAX. MIN. MAX. F A 4.24 4.65 0.167 0.183 Ø P b 0.69 1.02 0.027 0.040 Q b(1) 1.14 1.78 0.045 0.070 1) H( c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 D e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 1 2 3 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 1) L(1) 3.33 4.04 0.131 0.159 L( M* Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 b(1) L ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Xi’an Revison: 14-Dec-15 1 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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