IRF6644PbF IR MOSFET DirectFET™ Power MOSFET Typical values (unless otherwise specified) Quality Requirement Category: Consumer V V R (typ) DSS GS DS(on) . 100V min. ± 20V max 10.3m@ 10V Applications Q Q V g tot gd gs(th)  RoHS Compliant  28nC 9.0nC 3.7V  Lead-Free (Qualified up to 260°C Reflow)  Application Specifies MOSFETs      Ideal for High Performance Isolated Converter S Primary Switch Socket D G D S  Optimized for Synchronous Rectification  Low Conduction Losses DirectFET™ ISOMETRIC MN  Low Profile (< 0.7mm)  Dual Sided Cooling Compatible   Compatible with existing Surface Mount Techniques  Applicable DirectFET® Outline and Substrate Outline (see pg. 13, 14 for details)  SH SJ SP MZ MN Description The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%. The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V-75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliabil- ity improvements, and makes the device ideal for high performance isolated DC-DC converters.   60 80 ) ) mce( 5505 ID = 34A m( ce 70 VVGGSS == 78..00VV n n at 45 at 60 VGS = 10V s s is si VGS = 12V e 40 e R R n n 50 O 35 O e e ucr 30 cru 40 o o oS- 25 TJ = 125°C S -o 30 tn- 20 nt- ai ia rD 15 TJ = 25°C Dr 20 , n) 10 n), Ro(DS 5 Ro(DS 10 0 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 VGS, Gate -to -Source Voltage (V) ID, Drain Current (A) Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Typical On-Resistance vs. Drain Current Final Datasheet Please read the important Notice and Warnings at the end of this document V2.0 www.infineon.com 2017-03-28

IR MOSFET IRF6644PbF Table of Contents Table of Contents Applications …..………………………………………………………………………...……………..……………1 Description ….……………………………………………………………………………………………………1 Table of Contents ….………………………………………………………………………………………………...2 1 Parameters ………………………………………………………………………………………………3 2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4 3 Electrical characteristics ………………………………………………………………………………5 4 Electrical characteristic diagrams ……………………………………………………………………6 Package Information ………………………………………………………………………………………………13 Qualification Information ……………………………………………………………………………………………16 Revision History …………………………………………………………………………………………..…………17 Final Datasheet 2 V 2 . 0   2017-03-28

IR MOSFET IRF6644PbF Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units V  100 V DS RDS(on) max  13 m I @ T @ 25°C 57 A D C I @ T @ 25°C 10 A D A Final Datasheet 3 V 2 . 0   2017-03-28

IR MOSFET IRF6644PbF Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at T =25°C, unless otherwise specified) J Parameter Symbol Conditions Values Unit Continuous Drain Current (Silicon Limited) I T = 25°C, V @ 10V 57 D C GS Continuous Drain Current (Silicon Limited) I T = 70°C, V @ 10V 46 D C GS A Continuous Drain Current (Silicon Limited) I T = 25°C, V @ 10V 10 D A GS Pulsed Drain Current  I T = 25°C 228 DM C Maximum Power Dissipation  P T = 25°C 89 D C Maximum Power Dissipation  P T = 70°C 57 W D C Maximum Power Dissipation  P T = 25°C 2.8 D A Gate-to-Source Voltage V - ± 20 V GS Peak Soldering Temperature T - 270 P °C   Operating and Storage Temperature T T - -40 ... 150 J, STG Table 3 Thermal characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Junction-to-Ambient  R - - - 45 JA Junction-to-Ambient  R - - 12.5 - JA Junction-to-Ambient  R - - 20 - °C/W JA Junction-to-Case  R - - - 1.4 JC Junction-to-PCB Mounted R - - 1.0 - JA-PCB Table 4 Avalanche characteristics Parameter Symbol Values Unit Single Pulse Avalanche Energy  E 86 mJ   AS Avalanche Current  I 34 A AR Notes: Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET™ Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. (Starting T = 25°C, L = 0.15mH, R = 50, I = 34A. J G AS Pulse width ≤ 400µs; duty cycle ≤ 2%. Used double sided cooling, mounting pad with large heat sink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at T of approximately 90°C.  J Final Datasheet 4 V 2 . 0   2017-03-28

IR MOSFET IRF6644PbF Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain-to-Source Breakdown Voltage V V = 0V, I = 250µA 100 - - V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1mA - 0.1 - V/°C Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 34A  - 10.3 13 m Gate Threshold Voltage V 2.8 3.7 4.8 V GS(th) V = V , I = 150µA DS GS D Gate Threshold Voltage Temp. Coefficient V /T - -11 - mV°/C GS(th) J V = 100V, V = 0V - - 20 Drain-to-Source Leakage Current I DS GS µA DSS V = 80V, V = 0V, T = 125°C 250 DS GS J I V = 20V - - 100 Gate-to-Source Forward Leakage GSS GS nA  I V = -20V - - -100 GSS GS Gate Resistance R - - 1.6 -  G Table 6 Dynamic characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. Forward Trans conductance gfs V = 10V, I = 34A 65 - - S DS D Total Gate Charge Q - 28 42 g Pre-Vth Gate-to-Source Charge Q - 7.0 - gs1 I = 34A D Post-Vth Gate-to-Source Charge Q V = 50V - 3.0 - gs2 DS nC V = 10V Gate-to-Drain Charge Q GS - 9.0 - gd See Fig.8 Gate Charge Overdrive Q - 9.0 - godr Switch Charge (Qgs2 + Qgd) Q - 16 - sw Output Charge Q V = 16V ,V = 0V - 18 - nC oss DS GS Turn-On Delay Time t V = 50V - 9.5 - d(on) DD Rise Time t I = 34A - 16 - r D ns   Turn-Off Delay Time td(off) RG = 1.8 - 15 - Fall Time t V = 10V  - 5.7 - f GS Input Capacitance C V = 0V - 1770 - iss GS Output Capacitance C V = 50V - 280 - oss DS Reverse Transfer Capacitance Crss ƒ = 1.0MHz - 60 - pF Output Capacitance C V = 0V, V = 1.0V, ƒ = 1.0MHz - 2025 - oss GS DS Output Capacitance C V = 0V, V = 80V, ƒ = 1.0MHz - 245 - oss GS DS Table 7 Reverse Diode Values Parameter Symbol Conditions Unit Min. Typ. Max. Continuous Source Current MOSFET symbol D I - - 57 (Body Diode) S showing the A Pulsed Source Current integral reverse G I - - 228 (Body Diode)  SM p-n junction diode. S Diode Forward Voltage V T = 25°C, I = 34A,V = 0V  - - 1.3 V SD J S GS Reverse Recovery Time t T = 25°C, I = 34A, V = 50V - 53 80 ns rr J F DD Reverse Recovery Charge Q di/dt = 100A/µs - 97 146 nC rr Final Datasheet 5 V 2 . 0   2017-03-28

IR MOSFET IRF6644PbF Electrical characteristic diagrams 4 Electrical characteristic diagrams   1000 1000 VGS VGS TOP 15V TOP 15V 10V 10V A) 8.0V A) 8.0V nt ( 100 76..00VV nt ( 76..00VV urre BOTTOM 5.0V urre 100 BOTTOM 5.0V C C e e c c ur 10 ur o o S S o- o- 5.0V ain-t 5.0V ain-t 10 , DrD 1 , DrD I I  60µs PULSE WIDTH  60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Figure 3 Typical Output Characteristics Figure 4 Typical Output Characteristics   1000 2.4 I = 34A e D c an VGS = 10V A) st 2.0 t ( esi n R re 100 n ur O C e 1.6 I, Drain-to-Source D 10 TJ = 150°C VTD 6JS0 = µ= 2s 5 5P0°UVCLSE WIDTH R, Drain-to-SourcDS(on) (Normalized) 01..82 1 0.4 2 3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Figure 5 Typical Transfer Characteristics Figure 6 Normalized On-Resistance vs. Temperature Final Datasheet 6 V 2 . 0   2017-03-28

IR MOSFET IRF6644PbF Electrical characteristic diagrams   100000 14 VGS = 0V, f = 1 MHZ I = 34A C = C + C , C SHORTED D iss gs gd ds C = C 12 VDS= 80V rss gd V) V = 50V 10000 Coss = Cds + Cgd e ( DS g 10 VDS= 20V a pF) olt (nce Ciss rce V 8 a u cti 1000 Coss So ap o- 6 Ca e-t C, Gat 4 100 Crss , GS V 2 10 0 0.1 1 10 100 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Figure 7 Typical Capacitance vs. Drain-to-Source Figure 8 Typical Gate Charge vs. Gate-to-Source Voltage Voltage   1000 100 nt (A) 100 )A(t n 100µsec e e rr rr 1msec u u C C n TJ = 150°C TJ = 25°C e 10 e Drai 10 crouS OLIPMEITREADT IBOYN R IND ST(HoInS) AREA rs -o eve tn- R ai , D 1 Dr 1 IS , D Tc = 25°C 10msec I V = 0V Tj = 150°C DC GS Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 V , Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS Figure 9 Typical Source-Drain Diode Forward Figure 10 Maximum Safe Operating Area Voltage Final Datasheet 7 V 2 . 0   2017-03-28

IR MOSFET IRF6644PbF Electrical characteristic diagrams   60 5.0 4.5 50 V) e ( g A) 40 olta 4.0 nt ( d V rre hol 3.5 u s C 30 e n hr I,DraiD 20 ,Gate th) 23..50 ID = 150µA S(t ID = 250µA G 10 V 2.0 ID = 1.0mA I = 1.0A D 0 1.5 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T , Case Temperature (°C) T , Temperature ( °C ) C J Figure 11 Maximum Drain Current vs. Case Figure 12 Typical Threshold Voltage vs. Junction Temperature Temperature   400 I )mJ 350 TOP 4D.2A (y 8.9A g r 300 e BOTTOM 34A n E e h 250 c n a val 200 A e s ul 150 P e gl n 100 Si , S A 50 E 0 25 50 75 100 125 150 Starting T , Junction Temperature (°C) J Figure 13 Maximum Avalanche Energy vs. Drain Current Final Datasheet 8 V 2 . 0   2017-03-28

IR MOSFET IRF6644PbF Electrical characteristic diagrams   100 Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming DTj = 125°C and Tstart =25°C (Single Pulse) 0.01 )A(t 10 n e r 0.05 r u C e 0.10 h c n a la 1 v A Allowed avalanche Current vs avalanche pulsewidth, tav, assuming DTj = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Figure 14 Typical Avalanche Current vs. Pulse Width   10 W / C 1 ° D = 0.50 ) C J h 0.20 t Z e( 0.10 s 0.1 n 0.05 o p se 0.02 R al 0.01 m r 0.01 e h T SINGLE PULSE Notes: ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1 Figure 15 Maximum Effective Transient Thermal Impedance, Junction-to-Case Final Datasheet 9 V 2 . 0   2017-03-28

IR MOSFET IRF6644PbF Electrical characteristic diagrams    Surface mounted on 1 in. square  Mounted to PCB with  Mounted on minimum Cu board (still air). Small clip heatsink (still air). footprint full size board with metalized back and with small clip heatsink (still air).   Figure 16 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs Final Datasheet 10 V2.0 2017-03-28

IR MOSFET IRF6644PbF Electrical characteristic diagrams   Figure 17a Gate Charge Test Circuit Figure 17b Gate Charge Waveform   Figure 18a Unclamped Inductive Test Circuit Figure 18b Unclamped Inductive Waveforms Final Datasheet 11 V2.0 2017-03-28

IR MOSFET IRF6644PbF Electrical characteristic diagrams   Figure 19a Switching Time Test Circuit Figure 19b Switching Time Waveforms Final Datasheet 12 V2.0 2017-03-28

IR MOSFET IRF6644PbF Package Information 5 Package Information DirectFET™ Board Footprint, MN Outline Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™. This includes all recommendations for stencil and substrate designs. Note: For the most current drawing please refer to website at : www.irf.com/package/ Final Datasheet 13 V2.0 2017-03-28

IR MOSFET IRF6644PbF Package Information DirectFET™ Outline Dimension, MN Outline (Medium Size Can, N-Designation). Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™. This includes all recommendations for stencil and substrate designs. DirectFETTM Part Marking Note: For the most current drawing please refer to website at : www.irf.com/package/ Final Datasheet 14 V2.0 2017-03-28

IR MOSFET IRF6644PbF Tape & Reel Information DirectFETTM Tape & Reel Dimension (Showing component orientation). Note: For the most current drawing please refer to website at : www.irf.com/package/ Final Datasheet 15 V2.0 2017-03-28

IR MOSFET IRF6644PbF Qualification Information 6 Qualification Information Qualification Information Consumer Qualification Level (per JEDEC JESD47F) † MSL1 Moisture Sensitivity Level DirectFET™ Medium Can (per JEDEC J-STD-020D)† RoHS Compliant Yes † Applicable version of JEDEC standard at the time of product release.  Final Datasheet 16 V2.0 2017-03-28

IR MOSFET IRF6644PbF Revision History Revision History Major changes since the last revision Page or Reference Revision Date Description of changes All pages 1.0 2006-08-18  First release data sheet.  This is Unique datasheet Project with Id Ratings based on RthJC. All page 2.0 2017-03-28  The datasheet is converted in New Infineon Template. Final Datasheet 17 V2.0 2017-03-28

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