IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating V (V) 200 DS • Repetitive Avalanche Rated Available RDS(on) () VGS = 10 V 1.5 RoHS* • Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Q (nC) 1.8 • Ease of Paralleling gs Q (nC) 4.5 • Simple Drive Requirements gd Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF610PbF Lead (Pb)-free SiHF610-E3 IRF610 SnPb SiHF610 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 3.3 C Continuous Drain Current V at 10 V I GS D T = 100 °C 2.1 A C Pulsed Drain Currenta I 10 DM Linear Derating Factor 0.29 W/°C Single Pulse Avalanche Energyb E 64 mJ AS Repetitive Avalanche Currenta I 3.3 A AR Repetitive Avalanche Energya E 3.6 mJ AR Maximum Power Dissipation T = 25 °C P 36 W C D Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 8.8 mH, Rg = 25 , IAS = 3.3 A (see fig. 12). c. ISD  3.3 A, dI/dt  70 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91023 www.vishay.com S11-0510-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF610, SiHF610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - °C/W thCS Maximum Junction-to-Case (Drain) R - 3.5 thJC SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.30 - V/°C Gate-Source Threshold Voltage V V = V , I = 250 μA 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I μA DSS V = 160 V, V = 0 V, T = 125 °C - - 250 DS GS J Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.0 Ab - - 1.5  Forward Transconductance gfs VDS = 50 V, ID = 2.0 Ab 0.8 - - S Dynamic Input Capacitance C - 140 - iss V = 0 V, GS Output Capacitance C V = 25 V, - 53 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 15 - rss Total Gate Charge Q - - 8.2 g I = 3.3 A, V = 160 V, Gate-Source Charge Q V = 10 V D DS - - 1.8 nC gs GS see fig. 6 and 13b Gate-Drain Charge Q - - 4.5 gd Turn-On Delay Time t - 8.2 - d(on) Rise Time tr VDD = 100 V, ID = 3.3 A, - 17 - ns Turn-Off Delay Time td(off) Rg = 24 , RD = 30, see fig. 10b - 14 - Fall Time t - 8.9 - f Internal Drain Inductance L Between lead, D - 4.5 - D 6 mm (0.25") from package and center of nH Internal Source Inductance L die contact G - 7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS D - - 3.3 showing the A integral reverse G Pulsed Diode Forward Currenta I p - n junction diode - - 10 SM S Body Diode Voltage VSD TJ = 25 °C, IS = 3.3 A, VGS = 0 Vb - - 2.0 V Body Diode Reverse Recovery Time t - 150 310 ns rr T = 25 °C, I = 3.3 A, dI/dt = 100 A/μsb J F Body Diode Reverse Recovery Charge Q - 0.60 1.4 μC rr Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com Document Number: 91023 2 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF610, SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 V GS Top 15 V 10 V 8.0 V A) 7.0 V A) 100 urrent ( 100 Bottom 6554....0505 VVVV urrent ( C C n n 10-1 ai ai Dr Dr , D 10-1 , D I 4.5 V I 20 µs Pulse Width 10-2 20 µs Pulse Width TC = 25 °C VDS = 50 V 10-1 100 101 4 5 6 7 8 9 10 91023_01 VDS, Drain-to-Source Voltage (V) 91023_03 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 3 - Typical Transfer Characteristics C e 3.5 Top 1V5G VS stanc 3.0 IVDG =S 3=. 31 0A V 10 V si e urrent (A) 100 87655.....00050 VVVVV urce On Ralized) 22..05 Drain C Bottom 4.5 V 4.5 V n-to-So(Norm 1.5 I, D 10-1 Drai 1.0 , n) 0.5 20 µs Pulse Width S(o TC = 150 °C RD 0.0 10-1 100 101 - 60- 40- 20 0 20 40 60 80 100120140 160 91023_02 VDS, Drain-to-Source Voltage (V) 91023_04 TJ, Junction Temperature (°C) Fig. 2 - Typical Output Characteristics, T = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature C Document Number: 91023 www.vishay.com S11-0510-Rev. B, 21-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF610, SiHF610 Vishay Siliconix 300 VGS = 0 V, f = 1 MHz 101 Ciss = Cgs + Cgd, Cds Shorted A) 250 CCrss == CCgd + C nt ( pF) 200 oss ds gd urre apacitance ( 110500 CCiossss erse Drain C 100 150 °C 25 °C C v e R 50 Crss , D S I V = 0 V 0 10-1 GS 100 101 0.4 0.8 1.2 1.6 2.0 91023_05 VDS, Drain-to-Source Voltage (V) 91023_07 VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 102 V) ID = 3.3 A 5 Operationb iyn Rthis area limited ge ( 16 VDS = 160 V 2 DS(on) e Volta 12 VDS = 4V0 DVS = 100 V ent (A) 105 100 µs ourc Curr 12 1 ms e-to-S 8 Drain 25 10 ms V, GatGS 4 For test circuit I, D 0.125 TTCJ == 12550 ° °CC see figure 13 Single Pulse 0 10-2 0 2 4 6 8 10 0.1 2 5 1 2 5 10 2 5102 2 5 103 91023_06 QG, Total Gate Charge (nC) 91023_08 VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com Document Number: 91023 4 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF610, SiHF610 Vishay Siliconix R D V DS V GS 4.0 D.U.T. R G + -VDD A) 3.0 10 V nt ( Pulse width ≤ 1 µs e Duty factor ≤ 0.1 % urr C 2.0 n Fig. 10a - Switching Time Test Circuit ai Dr , D 1.0 I V DS 90 % 0.0 25 50 75 100 125 150 91023_09 TC, Case Temperature (°C) 10 % V GS t t t t d(on) r d(off) f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms 10 )C hJ 0 − 0.5 Zt se ( 1 0.2 n spo 0.1 PDM e 0.05 R mal 0.1 00..0021 S(Tinhgelrem Paul lRseesponse) t1 er t2 h T Notes: 1. Duty Factor, D = t/t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91023_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91023 www.vishay.com S11-0510-Rev. B, 21-Mar-11 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF610, SiHF610 Vishay Siliconix L V V DS DS Vary t to obtain p t required I p AS V DD RG D.U.T + V - DD V I DS AS 10 V t 0.01 Ω p I AS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 140 I D J) 120 Top 1.5 A m 2.1 A y ( Bottom 3.3 A g 100 er n e E 80 s ul P 60 e gl n 40 Si , AS 20 E V = 50 V DD 0 25 50 75 100 125 150 91023_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF QGS QGD + V D.U.T. - DS V G V GS 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com Document Number: 91023 6 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF610, SiHF610 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129) Driver same type as D.U.T. V - DD (cid:129) ISD controlled by duty factor “D” (cid:129) D.U.T. - device under test Driver gate drive Period D = P.W. P.W. Period V = 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = 5 V for logic level devices GS Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91023. Document Number: 91023 www.vishay.com S11-0510-Rev. B, 21-Mar-11 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-220-1 A MILLIMETERS INCHES E DIM. MIN. MAX. MIN. MAX. F A 4.24 4.65 0.167 0.183 Ø P b 0.69 1.02 0.027 0.040 Q b(1) 1.14 1.78 0.045 0.070 1) H( c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 D e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 1 2 3 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 1) L(1) 3.33 4.04 0.131 0.159 L( M* Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 b(1) L ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Xi’an Revison: 14-Dec-15 1 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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