Data Sheet No. PD60026 revS IR2112(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • V 600V max. Fully operational to +600V OFFSET • Tolerant to negative transient voltage I +/- 200 mA / 420 mA dV/dt immune O • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels VOUT 10 - 20V • 3.3V logic compatible Separate logic supply range from 3.3V to 20V ton/off (typ.) 125 & 105 ns Logic and power ground ±5V offset • CMOS Schmitt-triggered inputs with pull-down Delay Matching 30 ns • Cycle by cycle edge-triggered shutdown logic • Matched propagation delay for both channels Packages • Outputs in phase with inputs Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and 16-Lead SOIC (wide body) low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge- 14-Lead PDIP dized monolithic construction. Logic inputs are com- patible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection (cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:6)(cid:9)(cid:10)(cid:10)(cid:11) (cid:1)(cid:13) (cid:11) (cid:11) (cid:11) (cid:16)(cid:16) (cid:16)(cid:16) (cid:17) (cid:1)(cid:2)(cid:3) (cid:1)(cid:2)(cid:3) (cid:11) (cid:18) (cid:12)(cid:13) (cid:18)(cid:16) (cid:18)(cid:16) (cid:14)(cid:13)(cid:15)(cid:16) (cid:14)(cid:2)(cid:3) (cid:14)(cid:2)(cid:3) (cid:11) (cid:19)(cid:19) (cid:11) (cid:11) (cid:19)(cid:13)(cid:20) (cid:18)(cid:18) (cid:18)(cid:18) (cid:11) (cid:14)(cid:13) (cid:19)(cid:19) (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1

IR2112(-1-2)(S)PbF Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35. Symbol Definition Min. Max. Units VB High Side Floating Supply Voltage -0.3 625 VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 VCC Low Side Fixed Supply Voltage -0.3 25 V VLO Low Side Output Voltage -0.3 VCC + 0.3 VDD Logic Supply Voltage -0.3 VSS + 25 VSS Logic Supply Offset Voltage VCC - 25 VCC + 0.3 VIN Logic Input Voltage (HIN, LIN & SD) VSS - 0.3 VDD + 0.3 dVs/dt Allowable Offset Supply Voltage Transient (Figure 2) — 50 V/ns PD Package Power Dissipation @ TA ≤ +25°C (14 Lead DIP) — 1.6 W (16 Lead SOIC) — 1.25 RTHJA Thermal Resistance, Junction to Ambient (14 Lead DIP) — 75 °C/W (16 Lead SOIC) — 100 TJ Junction Temperature — 150 TS Storage Temperature -55 150 °C TL Lead Temperature (Soldering, 10 seconds) — 300 Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical ratings at other bias conditions are shown in Figures 36 and 37. Symbol Definition Min. Max. Units VB High Side Floating Supply Absolute Voltage VS + 10 VS + 20 VS High Side Floating Supply Offset Voltage Note 1 600 VHO High Side Floating Output Voltage VS VB VCC Low Side Fixed Supply Voltage 10 20 V VLO Low Side Output Voltage 0 VCC VDD Logic Supply Voltage VSS + 3 VSS + 20 VSS Logic Supply Offset Voltage -5 (Note 2) 5 VIN Logic Input Voltage (HIN, LIN & SD) VSS VDD TA Ambient Temperature -40 125 °C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). Note 2: When VDD < 5V, the minimum VSS offset is limited to -VDD. 2 www.irf.com

IR2112(-1-2)(S)PbF Dynamic Electrical Characteristics VBIAS (VCC, VBS, VDD) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Definition Figure Min. Typ. Max. Units Test Conditions ton Turn-On Propagation Delay 7 — 125 180 VS = 0V toff Turn-Off Propagation Delay 8 — 105 160 VS = 600V tsd Shutdown Propagation Delay 9 — 105 160 ns VS = 600V tr Turn-On Rise Time 10 — 80 130 tf Turn-Off Fall Time 11 — 40 65 MT Delay Matching, HS & LS Turn-On/Off — — — 30 Static Electrical Characteristics VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol Definition Figure Min. Typ. Max. Units Test Conditions VIH Logic “1” Input Voltage 12 9.5 — — V VIL Logic “0” Input Voltage 13 — — 6.0 VOH High Level Output Voltage, VBIAS - VO 14 — — 100 IO = 0A mV VOL Low Level Output Voltage, VO 15 — — 100 IO = 0A ILK Offset Supply Leakage Current 16 — — 50 VB = VS = 600V IQBS Quiescent VBS Supply Current 17 — 25 60 VIN = 0V or VDD IQCC Quiescent VCC Supply Current 18 — 80 180 VIN = 0V or VDD µA IQDD Quiescent VDD Supply Current 19 — 2.0 5.0 VIN = 0V or VDD IIN+ Logic “1” Input Bias Current 20 — 20 40 VIN = VDD IIN- Logic “0” Input Bias Current 21 — — 1.0 VIN = 0V VBSUV+ VBS Supply Undervoltage Positive Going 22 7.4 8.5 9.6 Threshold VBSUV- VBS Supply Undervoltage Negative Going 23 7.0 8.1 9.2 Threshold V VCCUV+ VCC Supply Undervoltage Positive Going 24 7.6 8.6 9.6 Threshold VCCUV- VCC Supply Undervoltage Negative Going 25 7.2 8.2 9.2 Threshold IO+ Output High Short Circuit Pulsed Current 26 200 250 — VO = 0V, VIN = VDD PW ≤ 10 µs mA IO- Output Low Short Circuit Pulsed Current 27 420 500 — VO = 15V, VIN = 0V PW ≤ 10 µs www.irf.com 3

IR2112(-1-2)(S)PbF Functional Block Diagram V B (cid:22)(cid:11) (cid:11) (cid:16)(cid:23)(cid:12)(cid:23)(cid:19)(cid:12) (cid:16)(cid:16) (cid:25) (cid:26) (cid:1)(cid:11) (cid:25)(cid:18)(cid:26) (cid:11) (cid:29)(cid:11) (cid:14)(cid:18)(cid:23)(cid:1)(cid:11)(cid:2)(cid:28)(cid:23)(cid:12)(cid:14) (cid:28)(cid:21)(cid:2)(cid:22)(cid:14)(cid:12)(cid:14)(cid:18)(cid:23)(cid:23)(cid:25) (cid:25)(cid:18) HO (cid:16)(cid:16) (cid:19)(cid:19) (cid:1)(cid:2)(cid:3) (cid:14)(cid:23)(cid:11)(cid:23)(cid:14) (cid:18)(cid:1)(cid:2)(cid:28)(cid:12) (cid:21)(cid:22)(cid:14)(cid:18)(cid:23) V S (cid:24)(cid:23)(cid:3) (cid:18)(cid:16) V CC (cid:22)(cid:11) (cid:16)(cid:23)(cid:12)(cid:23)(cid:19)(cid:12) (cid:11) (cid:29)(cid:11) (cid:16)(cid:16) (cid:19)(cid:19) (cid:14)(cid:2)(cid:3) (cid:14)(cid:23)(cid:11)(cid:23)(cid:14) LO (cid:18) (cid:18)(cid:1)(cid:2)(cid:28)(cid:12) (cid:25) (cid:26) (cid:16)(cid:23)(cid:14)(cid:15)(cid:27) (cid:11) COM (cid:18)(cid:18) Lead Definitions Symbol Description VDD Logic supply HIN Logic input for high side gate driver output (HO), in phase SD Logic input for shutdown LIN Logic input for low side gate driver output (LO), in phase VSS Logic ground VB High side floating supply HO High side gate drive output VS High side floating supply return VCC Low side supply LO Low side gate drive output COM Low side return 4 www.irf.com

IR2112(-1-2)(S)PbF Lead Assignments 14 Lead PDIP 16 Lead SOIC (Wide Body) IR2112 IR2112S 14 Lead PDIP w/o lead 4 14 Lead PDIP w/o leads 4 & 5 IR2112-1 IR2112-2 Part Number www.irf.com 5

IR2112(-1-2)(S)PbF <50 V/ns Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit (cid:1)(cid:2)(cid:3) "(cid:10)# "(cid:10)# (cid:14)(cid:2)(cid:3) (cid:7)(cid:8)(cid:31) (cid:7)(cid:30) (cid:7)(cid:8)!! (cid:7)! $(cid:10)# $(cid:10)# (cid:1)(cid:13) (cid:14)(cid:13) %(cid:10)# %(cid:10)# Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition (cid:1)(cid:2)(cid:3) "(cid:10)# "(cid:10)# (cid:14)(cid:2)(cid:3) "(cid:10)# (cid:18)(cid:16) (cid:14)(cid:13) (cid:1)(cid:13) (cid:7)’* %(cid:10)# (cid:1)(cid:13) $(cid:10)# (cid:14)(cid:13) (cid:20)(cid:12) (cid:20)(cid:12) $(cid:10)# (cid:14)(cid:13) (cid:1)(cid:13) Figure 5. Shutdown Waveform Definitions Figure 6. Delay Matching Waveform Definitions 6 www.irf.com

IR2112(-1-2)(S)PbF 250 250 e (ns) 200 e (ns) 200 Max. m Max. m Ti 150 Ti 150 y y a a el el D 100 D 100 n Typ. n Typ. O O n- 50 n- 50 ur ur T T 0 0 -50 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature VCC/VBS Supply Voltage (V) Figure 7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. VCC/VBS Supply Voltage 400 250 s) me (n 300 e (ns) 200 y Ti Max. Tim 150 Max. ela 200 ay n D Del 100 n-O 100 Typ. Off Typ. ur n- 50 T ur T 0 0 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 VDD Supply Voltage (V) Temperature (°C) Figure 7C. Turn-On Time vs. VDD Supply Voltage Figure 8A. Turn-Off Time vs. Temperature 250 400 me (ns) 125000 Max. me (ns) 300 Max. n-Off Delay Ti 10500 Typ. OFF Delay Ti 120000 Typ. ur 0 n- 0 T ur 10 12 14 16 18 20 T 0 2 4 6 8 10 12 14 16 18 20 VCC/VBS Supply Voltage (V) VDD Supply Voltage (V) Figure 8B. Turn-Off Time vs. VCC/VBS Supply Voltage Figure 8C. Turn-Off Time vs. VDD Supply Voltage www.irf.com 7

IR2112(-1-2)(S)PbF 250 250 n Delay Time (ns) 112050000 Max. n Delay Time (ns) 112050000 TMypa.x. w w o Typ. o 50 d 50 d ut ut h h S S 0 0 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 Temperature (°C) VCC/VBS Supply Voltage (V) Figure 9A. Shutdown Time vs. Temperature Figure 9B. Shutdown Delay Time vs. VCC/VBS Supply Voltage 400 250 ) s e (ns) 300 me (n200 im Max. Ti150 Delay T 200 On rise 100 Max. n tdow 100 Typ. urn- 50 Typ. u T h S 0 0 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 VDD Supply Voltage (V) Temperature (°C) Figure 9C. Shutdown Time vs. VDD Supply Voltage Figure 10A. Turn-On Rise Time vs. Temperature 250 125 s) n e ( 200 ns) 100 m Max. e ( se Ti 150 all Tim 75 Max. n Ri 100 On F 50 O Typ. n- urn- 50 Tur 25 Typ. T 0 0 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 Temperature (°C) VBIAS Supply Voltage (V) Figure 10B. Turn-On Rise Time vs. Voltage Figure 11A Turn-On Fall Time vs. Temperature 8 www.irf.com

IR2112(-1-2)(S)PbF 125 15 V) (ns) 100 Max. hold ( 12 Min. e s 9 75 e Turn-Off Fall Tim 2550 Typ. gic "1" Input Thr 036 0 Lo -50 -25 0 25 50 75 100 125 10 12 14 16 18 20 VBIAS Supply Voltage (V) Temperature (°C) Figure 11B. Turn-Off Fall Time vs. Voltage Figure 12A. Logic “I” Input Threshold vs. Temperature 5 15 1 ld V) ho 2 d ( 12 s 1 ol re sh t T 9 hre 9 u T 1 " Inp 6 Min. 0" Input 6 Max. ic " 3 gic " 3 g o o L L 0 0 2.5 5 7.5 10 12.5 15 17.5 20 -50 -25 0 25 50 75 100 125 VDD Logic Supply Voltage (V) Temperature (°C) Figure 13A. Logic “0” Input Threshold Figure 12B. Logic “I” Input Threshold vs. Temperature vs. Voltage V) 15 1 hold ( 12 (V) 0.8 s e e g put Tr 9 t Volta 0.6 gic " 0 " In 36 Max. Level Outpu 00..24 Max. o h L 0 Hig 0 2.5 5 7.5 10 12.5 15 17.5 20 -50 -25 0 25 50 75 100 125 VDD Logic Supply Voltage (V) Temperature Figure 13B. Logic “0” Input Threshold Figure 14A. High Level Output vs. Temperature vs. Voltage www.irf.com 9

IR2112(-1-2)(S)PbF 1 1 ) V) oltage (V 0.8 oltage ( 0.8 ut V 0.6 ut V 0.6 utp utp evel O 0.4 Max. vel O 0.4 Max. igh L 0.2 w Le 0.2 H o L 0 0 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 VBAIS Supply Votage (V) Temperature (°C) Figure 14B. High Level Output vs. Voltage Figure 15A. Low Level Output vs. Temperature V) 1 uA) 500 oltage ( 0.8 urrent ( 400 ut V 0.6 e C 300 p g Level Out 00..24 Max. ply Leaka 120000 Max. w p Lo Su 0 0 et -50 -25 0 25 50 75 100 125 10 12 14 16 18 20 Offs VBIAS Supply Votage (V) Temperature (°C) Figure 15B. Low Level Output vs. Voltage Figure 16A. Offset Supply Current vs. Temperature 500 100 A) u nt ( 400 uA) 80 age Curre 230000 y Current ( 60 Max. k pl 40 a p e Max. u L S ply 100 BS 20 p V set Su 0 0 100 200 300 400 500 600 0-50Typ-.25 0 25 50 75 100 125 Off VB Boost Voltage (v) Temperature (°C) Figure 16B. Offset Supply Current vs. Voltage Figure 17A. VBS Supply Current vs. Temperature 10 www.irf.com

IR2112(-1-2)(S)PbF 100 300 uA) 80 A) 250 ent ( Max. nt (u 200 S Supply Curr 246000 Typ. cc Supply Curre 110500 Max. B V 50 V Typ. 0 0 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 Temperature (°C) VBS Floating Supply Voltage (V) Figure 17B. VBS Supply Current vs. Voltage Figure 18A. VCC Supply Current vs. Temperature 300 12 nt (uA) 220500 ent (uA)108 Max. urre Max. Curr y C 150 y 6 pl pl Typ. up 100 up 4 S S Vcc 50 Typ. DD 2 V 0 0 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 Temper a ture (°C) Vcc Fixed Supply Voltage (V) Figure 18B. VCC Supply Current vs. Voltage Figure 19A. VDD Supply Current vs. Temperature 12 100 A) uA) 10 nt (u 80 urrent ( 8 Max. s Curre 60 ply C 6 ut Bia 40 Max. up 4 np VDD S 2 Typ. gic "1 " I 20 Typ. o 0 L 0 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 VDD Logic Supply Voltage (V) Temperature (°C) Figure 19B. VDD Supply Current vs. VDD Voltage Figure 20A. Logic “I” Input Current vs. Temperature www.irf.com 11

IR2112(-1-2)(S)PbF 100 5 uA) A) Current ( 6800 Max. Current (u 34 Bias 40 Bias 2 gic " 1" Input 200 0 2 4 6 8 10 12 14 16Typ1.8 20 Logic "0" Input 01-50 -25 0 25Max.50 75 100 125 o L VDD Logic Supply Voltage (V) Temperature (°C) Figure 20B. Logic “1” Input Current vs. VDD Voltage Figure 21A. Logic “0” Input Current vs. Tempera- ture uA) 5 +(V) 11 urrent ( 4 ockout 10 Max. as C 3 ge L 9 Typ. ut Bi 2 volta 8 0" Inp 1 Max. Under 7 Min. c " S Logi 0 VB 6 -50 -25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 20 VDD Supply Voltage (V) Temperature (°C) Figure 21B. Logic “0” Input Current vs. VDD Voltage Figure 22. VBS Undervoltage (+) vs. Temperature 11 11 ut -(V) 10 +(V) 10 e Locko 9 Max. ockout 9 MTyapx.. g L Undervolta 78 TMyinp.. ervoltage 78 Min. VBS Und 6 c 6 c -50 -25 0 25 50 75 100 125 V -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Figure 23. VBS Undervoltage (-) vs. Temperature Figure 24. VCC Undervoltage (-) vs. Temperature 12 www.irf.com

IR2112(-1-2)(S)PbF 11 500 Lockout - (V) 109 Max. urrent (mA) 340000 oltage 8 Typ. urce C 200 Typ. CC Underv 7 Min. Output so 100 Min. V 6 0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Figure 25. VCC Undervoltage (-) vs. Temperature Figure 26A. Output Source Current vs. Temperature 500 750 A) source Current (m 234000000 MTyinp.. Sink Current (mA) 346050000 TMyinp.. Output 100 Output 150 0 0 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 VBIAS Supply Voltage (V) Temperature (°C) Figure 26B. Output Source Current vs. Voltage Figure 27A. Output Sink Current vs. Temperature 750 A) m 600 nt ( Typ. e urr 450 C k n 300 Si Min. ut p 150 ut O 0 10 12 14 16 18 20 VBIAS Supply Voltage (V) Figure 27B. Output Sink Current vs. Voltage www.irf.com 13

IR2112(-1-2)(S)PbF 150 150 320V 125 320V 125 mperature (°C)17050 mperature (°C)17050 140V Junction Te 50 11400VV Junction Te 50 10V 25 25 0 0 1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Frequency (Hz) Figure 28. IR2112 TJ vs. Frequency (IRFBC20) Figure 29. IR2112 TJ vs. Frequency (IRFBC30) RGATE = 33ΩΩΩΩΩ, VCC = 15V RGATE = 22ΩΩΩΩΩ, VCC = 15V 150 320V 150 320V140V10V 125 125 140V mperature (°C)17050 10V mperature (°C)17050 Junction Te 50 Junction Te 50 25 25 0 0 1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Frequency (Hz) Figure 30. IR2112 TJ vs. Frequency (IRFBC40) Figure 31. IR2112 TJ vs. Frequency (IRFPE50) RGATE = 15ΩΩΩΩΩ, VCC = 15V RGATE = 10ΩΩΩΩΩ, VCC = 15V 150 320V 150 320V 140V 125 125 mperature (°C)17050 11400VV mperature (°C)17050 Junction Te 50 Junction Te 50 10V 25 25 0 0 1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Frequency (Hz) Figure 32. IR2112S TJ vs. Frequency (IRFBC20) Figure 33. IR2112S TJ vs. Frequency (IRFBC30) RGATE = 33ΩΩΩΩΩ, VCC = 15V RGATE = 22ΩΩΩΩΩ, VCC = 15V 14 www.irf.com

IR2112(-1-2)(S)PbF 150 320V 150 320V140V10V 140V 125 10V 125 mperature (°C)17050 mperature (°C)17050 Junction Te 50 Junction Te 50 25 25 0 0 1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Frequency (Hz) Figure 34. IR2112S TJ vs. Frequency (IRFBC40) Figure 35. IR2112S TJ vs. Frequency (IRFPE50) RGATE = 15ΩΩΩΩΩ, VCC = 15V RGATE = 10ΩΩΩΩΩ, VCC = 15V 0.0 20.0 -3.0 V)16.0 V Offset Supply Voltage (V)S-1--962...000 Typ. V Logic Supply Offset Voltage (SS1482...000 Typ. -15.0 0.0 10 12 14 16 18 20 10 12 14 16 18 20 VBS Floating Supply Voltage (V) VCC Fixed Supply Voltage (V) Figure 36. Maximum VS Negative Offset vs. Figure 37. Maximum VSS Positive Offset vs. VBS Supply Voltage VCC Supply Voltage www.irf.com 15

IR2112(-1-2)(S)PbF Case outline 01-6010 14-Lead PDIP 01-3002 03 (MS-001AC) 01-6010 14-Lead PDIP w/o Lead 4 01-3008 02 (MS-001AC) 16 www.irf.com

IR2112(-1-2)(S)PbF 16 Lead PDIP w/o Leads 4 & 5 01-6015 01-3010 02 01 6015 16-Lead SOIC (wide body) 01-3014 03 (MS-013AA) www.irf.com 17

IR2112(-1-2)(S)PbF LEADFREE PART MARKING INFORMATION IRxxxxxx Part number YWW? Date code IR logo ?XXXX Pin 1 Identifier Lot Code ? MARKING CODE (Prod mode - 4 digit SPN code) P Lead Free Released Non-Lead Free Released Assembly site code ORDER INFORMATION Part only available Leadfree 14-Lead PDIP IR2112 order IR2112PbF 14-Lead PDIP IR2112-1 order IR2112-1PbF 14-Lead PDIP IR2112-2 order IR2112-2PbF 16-Lead SOIC IR2112S order IR2112SPbF IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 This product has been qualified per industrial level Data and specifications subject to change without notice. 3/23/2005 18 www.irf.com

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: IR2112PBF IR2112SPBF IR2112STRPBF