MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPP029N06N DataSheet Rev.2.6 Final PowerManagement&Multimarket

TO-220-3 OptiMOSTMPower-Transistor,60V IPP029N06N 1Description tab Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit Drain Pin 2, Tab V 60 V DS R 2.9 mW Gate DS(on),max Pin 1 I 100 A D Source Q 65 nC Pin 3 OSS Q (0V..10V) 56 nC G Type/OrderingCode Package Marking RelatedLinks IPP029N06N PG-TO220-3 029N06N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.6,2015-02-10

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 OptiMOSTMPower-Transistor,60V IPP029N06N Final Data Sheet 3 Rev.2.6,2015-02-10

2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Continuous drain current ID --- --- 11200400 A VVVGGGSSS===111000VVV,,,TTTCCC===2125050°°CC°C,RthJA=50K/W Pulsed drain current1) ID,pulse - - 400 A TC=25°C Avalanche energy, single pulse2) EAS - - 110 mJ ID=100A,RGS=25W Gate source voltage VGS -20 - 20 V - Power dissipation Ptot -- -- 133.06 W TTCA==2255°°CC,RthJA=50K/W Operating and storage temperature Tj,Tstg -55 - 175 °C IDEICN cIElimC a6t8ic- 1c:a 5te5g/1o7ry5;/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Tbohtetormmal resistance, junction - case, RthJC - 0.7 1.1 K/W - Dmeinviimcea lo fno oPtpCrBin,t RthJA - - 62 K/W - D6 ecvmic²e c ooonl iPngC Ba,rea3) RthJA - - 40 K/W - Sreofllodwer isnogld teerminpge araretu arell,o wwaevde and Tsold - - 260 °C Reflow MSL1 OptiMOSTMPower-Transistor,60V 1) See figure 3 for more detailed information 2) See figure 13 for more detailed information 3P) CDBe visic vee ortnic 4a0l imn msti lxl a4i0r. mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. IPP029N06N Final Data Sheet 4 Rev.2.6,2015-02-10

4Electricalcharacteristics Table4Staticcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=75µA Zero gate voltage drain current IDSS -- 01.05 1100 µA VVDDSS==6600VV,,VVGGSS==00VV,,TTjj==21525°C°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) -- 23..73 24..94 mW VVGGSS==160VV,,IDI=D=2150A0A Gate resistance1) RG 0.65 1.3 1.95 W - Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=100A Table5Dynamiccharacteristics1) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss - 4100 5125 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 980 1225 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 39 78 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 17 - ns VRDGD,e=xt3,e0xVt=,3VWGS=10V,ID=100A, Rise time tr - 15 - ns VRDGD,e=xt3,e0xVt=,3VWGS=10V,ID=100A, Turn-off delay time td(off) - 30 - ns VRDGD,e=xt3,e0xVt=,3VWGS=10V,ID=100A, Fall time tf - 8 - ns VRDGD,e=xt3,e0xVt=,3VWGS=10V,ID=100A, OptiMOSTMPower-Transistor,60V 1) Defined by design. Not subject to production test IPP029N06N Final Data Sheet 5 Rev.2.6,2015-02-10

Table6Gatechargecharacteristics1) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs - 20 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge at threshold Qg(th) - 11 - nC VDD=30V,ID=100A,VGS=0to10V Gate to drain charge2) Qgd - 11 15 nC VDD=30V,ID=100A,VGS=0to10V Switching charge Qsw - 19 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total2) Qg - 56 66 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10V Output charge2) Qoss - 65 82 nC VDD=30V,VGS=0V Table7Reversediode Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode continuous forward current IS - - 120 A TC=25°C Diode pulse current IS,pulse - - 480 A TC=25°C Diode forward voltage VSD - 1.0 1.2 V VGS=0V,IF=100A,Tj=25°C Reverse recovery time2) trr - 54 86 ns VR=30V,IF=100A,diF/dt=100A/µs Reverse recovery charge Qrr - 77 - nC VR=30V,IF=100A,diF/dt=100A/µs OptiMOSTMPower-Transistor,60V 12)) SDeeefin †eGda btey cdheasriggen .w Naovte sfourbmjesc†t ftoor ppraordaumcteiotenr tdeesftinition IPP029N06N Final Data Sheet 6 Rev.2.6,2015-02-10

5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation W] P[tot TC[°C] OptiMOSTMPower-Transistor,60V IPP029N06N Diagram2:Draincurrent 160 120 140 100 120 80 100 A] 80 [D 60 I 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 T [°C] C P =f(T ) I =f(T );V ‡ 10V tot C D C GS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 103 101 1 µs 10 µs 102 100 µs 100 0.5 DC 1 ms W] I[A]D 101 10 ms [K/JC 0.2 h Zt 0.1 10-1 0.05 0.02 100 0.01 single pulse 10-1 10-2 10-1 100 101 102 10-5 10-4 10-3 10-2 10-1 V [V] t [s] DS p I =f(V );T =25°C;D=0;parameter:t Z =f(t );parameter:D=t /T D DS C p thJC p p Final Data Sheet 7 Rev.2.6,2015-02-10

Diagram5:Typ.outputcharacteristics I[A]D VDS[V] OptiMOSTMPower-Transistor,60V IPP029N06N Diagram6:Typ.drain-sourceonresistance 400 8 10 V 7 V 360 5 V 5.5 V 6 V 7 320 6 V 6 280 5 240 ] Wm 200 5.5 V [n) 4 o S( 7 V 160 D R 3 10 V 120 5 V 2 80 1 40 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 80 160 240 320 400 I [A] D I =f(V );T=25°C;parameter:V R =f(I );T=25°C;parameter:V D DS j GS DS(on) D j GS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 200 360 320 150 280 240 A] S] I[D 200 g[fs 100 160 120 50 80 40 175 °C 25 °C 0 0 0 2 4 6 8 0 20 40 60 80 100 V [V] I [A] GS D I =f(V );|V |>2|I |R ;parameter:T g =f(I );T=25°C D GS DS D DS(on)max j fs D j Final Data Sheet 8 Rev.2.6,2015-02-10

Diagram9:Drain-sourceon-stateresistance ] Wm R[DS(on) Tj[°C] OptiMOSTMPower-Transistor,60V IPP029N06N Diagram10:Typ.gatethresholdvoltage 7.0 5 6.5 6.0 4 5.5 5.0 4.5 3 4.0 750 µA max V] 3.5 [h) S(t 75 µA 3.0 G typ V 2 2.5 2.0 1.5 1 1.0 0.5 0.0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T[°C] j R =f(T);I =100A;V =10V V =f(T);V =V DS(on) j D GS GS(th) j GS DS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 104 103 25 °C 175 °C Ciss 103 102 Coss pF] A] C[ I[F 102 101 Crss 101 100 0 20 40 60 0.0 0.5 1.0 1.5 2.0 V [V] V [V] DS SD C=f(V );V =0V;f=1MHz I =f(V );parameter:T DS GS F SD j Final Data Sheet 9 Rev.2.6,2015-02-10

Diagram13:Avalanchecharacteristics I[A]AV tAV[µs] OptiMOSTMPower-Transistor,60V IPP029N06N Diagram14:Typ.gatecharge 103 12 30 V 10 12 V 48 V 102 8 100 °C 25 °C V] 125 °C [GS 6 V 101 4 2 100 0 100 101 102 103 0 10 20 30 40 50 60 Q [nC] gate I =f(t );R =25W ;parameter:T V =f(Q );I =100Apulsed;parameter:V AS AV GS j(start) GS gate D DD Diagram15:Drain-sourcebreakdownvoltage 70 66 62 V] [S) S D R( B 58 V 54 50 -60 -20 20 60 100 140 180 T[°C] j V =f(T);I =1mA BR(DSS) j D Final Data Sheet 10 Rev.2.6,2015-02-10

6PackageOutlines OptiMOSTMPower-Transistor,60V IPP029N06N Figure1OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.6,2015-02-10

RevisionHistory IPP029N06N Revision:2015-02-10,Rev.2.6 Previous Revision Revision Date Subjects (major changes since last revision) 2.5 2014-07-25 Rev.2.5 2.6 2015-02-10 Insert Rg min value = 0.65 Ohm WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. OptiMOSTMPower-Transistor,60V IPP029N06N Final Data Sheet 12 Rev.2.6,2015-02-10

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