ThinPAK8x8 IPL60R385CP MOSFET 600VCoolMOSªCPPowerTransistor TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofa fastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylow switchingandconductionlossesmakeswitchingapplicationsevenmore efficient,morecompact,lighter,andcooler.. ThinPAK ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Drain Pin 5 Features •Reducedboardspaceconsumption Gate •Increasedpowerdensity Pin 1 Driver •Shortcommutationloop Source Power Pin 2 •Smoothswitchingwaveform Source Pin 3,4 •easytouseproducts •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •QuallfiedaccordingtoJEDEC(J-STD20andJESD22)fortarget applications(Server,Adapter) •Pb-freeplating,Halogenfree Potentialapplications Server,Adapter Table1KeyPerformanceParameters Parameter Value Unit V @ T 650 V ds jmax R 0.385 W DS(on),max Q 17 nC g,typ I 27 A D,pulse E @ 400V 3.2 µJ oss Body diode di /dt 400 A/µs F Type/OrderingCode Package Marking RelatedLinks IPL60R385CP PG-VSON-4 6R385P see Appendix A Final Data Sheet 1 Rev.2.2,2017-09-06

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 600VCoolMOSªCPPowerTransistor IPL60R385CP Final Data Sheet 2 Rev.2.2,2017-09-06

1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Continuous drain current1) ID -- -- 95.7 A TTCC == 2150°0C°C Pulsed drain current2) ID,pulse - - 27 A TC=25 °C Avalanche energy, single pulse EAS - - 227 mJ ID =3.4 A; VDD = 50 V Avalanche energy, repetitive3) EAR - - 0.34 mJ ID =3.4 A; VDD = 50 V Avalanche current, repetitive3) IAR - - 3.4 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage VGS --2300 -- 2300 V sAtCat i(cf>;1 Hz) Power dissipation Ptot - - 83 W TC=25°C Operating Temperature Tj -40 - 150 °C - Storage Temperature Tstg -40 - 125 °C - Continuous diode forward current IS - - 9.0 A TC=25°C Diode pulse current2) IS,pulse - - 27 A TC = 25°C Reverse diode dv/dt4) dv/dt - - 15 V/ns VseDeS =ta0b..le.4 800V,ISD<=ID,Tj=25°C Maximum diode commutation speed diF/dt - - 400 A/ms VseDeS =ta0b..le.4 800V,ISD<=ID,Tj=25°C 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.5 °C/W- Thermal resistance, junction - ambient5)RthJA - - 45 °C/WScoMoDlin vge arsreioan, device on PCB, 6cm² Sonollyd earlilnogw etedm apt eleraatdusre, wavesoldering Tsold - - 260 °C reflow MSL2a 600VCoolMOSªCPPowerTransistor 12345)))))  LPRIDdiueemelpvnsiietetceitce idwta i ovbildenlyot ha4wT v0tj pmasm ailldaxmim.en M*ci4athea0nedxmd icmbmhayiuug* Tm1shj.e, 5msdsamiu dxatmeyd d scowiytnicioetlcne lhaalyw peiotrh weipedore xlnoytsi cPsaeClsBR t GhFaRt 4c awnit hb e6 ccmal2cu claotpepde ar sa rPeAaV =(tEhiAcRk*nf;e Psusl s7e0 ?wmid)t hfo trp d lrimaiinte cdo bnyn eTcj,tmioaxn. PCB is vertical without air stream cooling. IPL60R385CP Final Data Sheet 3 Rev.2.2,2017-09-06

3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.34mA Zero gate voltage drain current IDSS -- -10 1- mA VVDDSS==660000VV,,VVGGSS==00VV,,TTjj==21550°C°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) -- 00..3950 0-.385 W VVGGSS==1100VV,,IIDD==55..22AA,,TTj=j=2155°0C°C Gate resistance RG - 1.8 - W f=1MHz,opendrain Table5Dynamiccharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Input capacitance Ciss - 790 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 38 - pF VGS=0V,VDS=100V,f=1MHz Ereflfaetcetdiv1e) output capacitance, energy Co(er) - 36 - pF VGS=0V,VDS=0...480V Ereflfaetcetdiv2e) output capacitance, time Co(tr) - 96 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VRDGD==34.30W0;Vs,eVeGtSa=b1le39V,ID=5.2A, Rise time tr - 5 - ns VRDGD==34.30W0;Vs,eVeGtSa=b1le39V,ID=5.2A, Turn-off delay time td(off) - 40 - ns VRDGD==34.30W0;Vs,eVeGtSa=b1le39V,ID=5.2A, Fall time tf - 5 - ns VRDGD==34.30W0;Vs,eVeGtSa=b1le39V,ID=5.2A, Table6Gatechargecharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Gate to source charge Qgs - 4 - nC VDD=480V,ID=5.2A,VGS=0to10V Gate to drain charge Qgd - 6 - nC VDD=480V,ID=5.2A,VGS=0to10V Gate charge total Qg - 17 - nC VDD=480V,ID=5.2A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=480V,ID=5.2A,VGS=0to10V 600VCoolMOSªCPPowerTransistor 12))CCoo((etrr))iissaaffiixxeeddccaappaacciittaanncceetthhaattggiivveesstthheessaammeecshtoarregdinegnteimrgeyaassCCoosssswwhhilieleVVDDSSisisrrisisininggfrfroomm00toto8800%%VV(B(BRR)D)DSSSS IPL60R385CP Final Data Sheet 4 Rev.2.2,2017-09-06

Table7Reversediodecharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=5.2A,Tj=25°C Reverse recovery time trr - 260 - ns VseRe= 4ta0b0leV ,8IF=5.2diF/dt=100A/µs Reverse recovery charge Qrr - 3.1 - µC VseRe= 4ta0b0leV ,8IF=5.2diF/dt=100A/µs Peak reverse recovery current Irrm - 24 - A VseRe= 4ta0b0leV ,8IF=5.2diF/dt=100A/µs 600VCoolMOSªCPPowerTransistor IPL60R385CP Final Data Sheet 5 Rev.2.2,2017-09-06

4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation P[W]tot TC[°C] 600VCoolMOSªCPPowerTransistor IPL60R385CP Diagram2:Safeoperatingarea 90 102 80 1 µs 10 µs 70 101 100 µs 60 50 1 ms [A]D 100 40 I 10 ms DC 30 10-1 20 10 0 10-2 0 25 50 75 100 125 150 100 101 102 103 V [V] DS P =f(T ) I =f(V );T =25°C;D=0;parameter:t tot C D DS C p Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 102 101 1 µs 101 10 µs 100 0.5 100 µs W] 0.2 I[A]D 100 1 ms [K/JC 0.1 h Zt 10 ms 0.05 10-1 0.02 DC 0.01 10-1 single pulse 10-2 10-2 100 101 102 103 10-5 10-4 10-3 10-2 10-1 V [V] t [s] DS p I =f(V );T =80°C;D=0;parameter:t Z =f(t );parameter:D=t /T D DS C p thJC P p Final Data Sheet 6 Rev.2.2,2017-09-06

Diagram5:Typ.outputcharacteristics I[A]D VDS[V] 600VCoolMOSªCPPowerTransistor IPL60R385CP Diagram6:Typ.outputcharacteristics 40 20 20 V 35 10 V 20 V 8 V 10 V 7 V 30 15 8 V 6 V 7 V 25 A] 5.5 V 20 [D 10 I 6 V 15 5 V 5.5 V 10 5 4.5 V 5 V 5 4.5 V 0 0 0 5 10 15 20 0 5 10 15 20 V [V] DS I =f(V );T=25°C;parameter:V I =f(V );T=125°C;parameter:V D DS j GS D DS j GS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 2.00 1.10 5 V 5.5 V 6 V 6.5 V 1.80 0.90 1.60 7 V 0.70 1.40 98% ] ] W[n) W[n) typ o o S( 10 V S( D 1.20 D R R 0.50 1.00 0.30 0.80 0.60 0.10 0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 I [A] T[°C] D j R =f(I );T=125°C;parameter:V R =f(T);I =5.2A;V =10V DS(on) D j GS DS(on) j D GS Final Data Sheet 7 Rev.2.2,2017-09-06

Diagram9:Typ.transfercharacteristics I[A]D VGS[V] 600VCoolMOSªCPPowerTransistor IPL60R385CP Diagram10:Typ.gatecharge 40 10 9 35 25 °C 8 120 V 30 480 V 7 25 6 V] 20 [S 5 G V 4 15 150 °C 3 10 2 5 1 0 0 0 2 4 6 8 10 0 5 10 15 20 25 Q [nC] gate I =f(V );V =20V;parameter:T V =f(Q );I =5.2Apulsed;parameter:V D GS DS j GS gate D DD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 102 250 200 101 150 J] A] m [F 125 °C 25 °C [S I A E 100 100 50 10-1 0 0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150 V [V] T[°C] SD j I =f(V );parameter:T E =f(T);I =3.4A;V =50V F SD j AS j D DD Final Data Sheet 8 Rev.2.2,2017-09-06

Diagram13:Drain-sourcebreakdownvoltage V[V]BR(DSS) Tj[°C] 600VCoolMOSªCPPowerTransistor IPL60R385CP Diagram14:Typ.capacitances 680 105 660 104 640 Ciss 103 620 F] p C[ 600 102 Coss 580 101 560 Crss 540 100 -60 -20 20 60 100 140 180 0 100 200 300 400 500 600 V [V] DS V =f(T);I =0.25mA C=f(V );V =0V;f=1MHz BR(DSS) j D DS GS Diagram15:Typ.Cossstoredenergy 6 5 4 J] µ [s 3 s o E 2 1 0 0 100 200 300 400 500 600 V [V] DS E =f(V ) oss DS Final Data Sheet 9 Rev.2.2,2017-09-06

5TestCircuits Table8Diodecharacteristics Table9switchingtimes(ss) 600VCoolMOSªCPPowerTransistor IPL60R385CP Test circuit for diode characteristics Diode recovery waveform R 1 g V DS R 2 g Table10Unclampedinductiveload(ss) I F R 1 = R 2 g g Switching times test circuit for inductive load Switching times waveform V DS 90% V DS V 10% GS V GS td(on) tr td(off) tf ton toff Final Data Sheet 10 Rev.2.2,2017-09-06

6PackageOutlines 600VCoolMOSªCPPowerTransistor IPL60R385CP Figure1OutlinePG-VSON-4,dimensionsinmm/inches Final Data Sheet 11 Rev.2.2,2017-09-06

7AppendixA Table11RelatedLinks •IFXCoolMOSWebpage:www.infineon.com •IFXDesigntools:www.infineon.com 600VCoolMOSªCPPowerTransistor IPL60R385CP Final Data Sheet 12 Rev.2.2,2017-09-06

RevisionHistory IPL60R385CP Revision:2017-09-06,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2017-09-06 Updated MSL; style updated TrademarksofInfineonTechnologiesAG AEIPSSUaROOsRILMyFIIPDAXAIC™RMFEIL™,O™ACN,S1,E™H6Ics6™,oo™PnP,orA,SiBmCCPReaKOIPn™DCPAG™,ACEiK-K,W™™T™aE,,,fMEeCPrcPIr™PoiFmnO,EoeMSTDS™™IUTPA,AA,CCtLQh™oKi™no™Q,l,GE,M™acPoNoR,dn™TOSoRPT,FECAAENCoCToC™KKlHM™™,SOP,,TRmSEOO™cyPo--d,nS™™CoIL,Po,™ToINMrl,SioC™REvoAaT,rleES™it™hiIcC,IeC.C™D™oR,o,RIlSVOEiEmCAR™Ln™3iT,™,uCen,OueRRp™eeEv,cCeO™rOSP,NaTFvTICGeRO™AOS™,L™S™,aO,,tHRpCItIRTiCMFO™OES,STSS™™AIEV,,GHOEEy™RbTI,rG™iDdAP,A™SAVIC,EPPK™MO™O,WD,SIEI™n-RPfi,nOCSeOLom™Dna™E,rt™DL,rE,BWlaIdSe™™,, TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 600VCoolMOSªCPPowerTransistor IPL60R385CP Final Data Sheet 13 Rev.2.2,2017-09-06

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