MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 500VCoolMOS™CEPowerTransistor IPD50R500CE DataSheet Rev.2.2 Final PowerManagement&Multimarket

DPAK 500VCoolMOS™CEPowerTransistor IPD50R500CE 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower tab MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand 2 offeringthebestcostdownperformanceratioavailableonthemarket. 1 3 Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness Drain •Easytouse/drive Pin 2 •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Gate Pin 1 Applications Source PFCstages,hardswitchingPWMstagesandresonantswitchingstages Pin 3 fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit V @ T 550 V DS j,max R 0.5 W DS(on),max Q 18.7 nC g.typ I 24 A D,pulse E @400V 2.02 µJ oss Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks IPD50R500CE PG-TO 252 50S500CE see Appendix A Final Data Sheet 2 Rev.2.2,2015-11-17

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 500VCoolMOS™CEPowerTransistor IPD50R500CE Final Data Sheet 3 Rev.2.2,2015-11-17

2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Continuous drain current1) ID -- -- 74..68 A TTCC == 2150°0C°C Pulsed drain current2) ID,pulse - - 24 A TC=25°C Avalanche energy, single pulse EAS - - 129 mJ ID =2.9A; VDD = 50V Avalanche energy, repetitive EAR - - 0.20 mJ ID =2.9A; VDD = 50V Avalanche current, repetitive IAR - - 2.9 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS --2300 -- 2300 V sAtCat i(cf>;1 Hz) PTOow-2e5r 2dissipation (non FullPAK) Ptot - - 57 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 6.6 A TC=25°C Diode pulse current2) IS,pulse - - 24.0 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VtcoDnSd<=20m..s.400V,ISD<=IS,Tj=25°C, Maximum diode commutation speed3) dif/dt - - 500 A/ms VtcoDnSd<=20m..s.400V,ISD<=IS,Tj=25°C, 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2.19 °C/W- SMD version, device on PCB, Thermal resistance, junction - ambient4)RthJA -- -35 6-2 °C/WmSMinDim vael rfsoiootnp,r idnetvice on PCB, 6cm2 cooling area4) Sreofllodwersinogld etermingp earlalotuwreed, wave- & Tsold - - 260 °C reflow MSL 1 500VCoolMOS™CEPowerTransistor 1234is))))  LPVDvieuDemCrlvstliiitinecceke =adw 4l obiw0dny0ti t h4VhT 0ot;j pmmuV altixDmm .aS M*,iiptr4ee aas0dkxtm< ribemVmya(uB *mTRm1)j ,D.mc 5SdaomSxuo;tmliyidn ecognyn.cteilce al aDlyl=oe0wr .e7sp5idoexya PndCBhi gFhR4si dweiths w6ictcmh2 wcoithppideer natriecaal (RthGickness 70mm) for drain connection. PCB IPD50R500CE Final Data Sheet 4 Rev.2.2,2015-11-17

4Electricalcharacteristics Table4Staticcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS -- -10 1- mA VVDDSS==550000VV,,VVGGSS==00VV,,TTjj==2155°0C°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) -- 01..4158 0-.50 W VVGGSS==1133VV,,IIDD==22..33AA,,TTjj==2155°0C°C Gate resistance RG - 3 - W f=1MHz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss - 433 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 31 - pF VGS=0V,VDS=100V,f=1MHz Ereflfaetcetdiv1e) output capacitance, energy Co(er) - 25 - pF VGS=0V,VDS=0...400V Ereflfaetcetdiv2e) output capacitance, time Co(tr) - 100 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 6 - ns VRDGD==34.40W0V,VGS=13V,ID=2.9A, Rise time tr - 5 - ns VRDGD==34.40W0V,VGS=13V,ID=2.9A, Turn-off delay time td(off) - 30 - ns VRDGD==34.40W0V,VGS=13V,ID=2.9A, Fall time tf - 12 - ns VRDGD==34.40W0V,VGS=13V,ID=2.9A, Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs - 2.3 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate to drain charge Qgd - 10 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate charge total Qg - 18.7 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=2.9A,VGS=0to10V 500VCoolMOS™CEPowerTransistor 12))CCoo((etrr))iissaaffiixxeeddccaappaacciittaanncceetthhaattggiivveesstthheessaammeecshtoarregdinegnteimrgeyaassCCoosssswwhhilieleVVDDSSisisrrisisininggfrfroomm00toto8800%%VV(B(BRR)D)DSSSS IPD50R500CE Final Data Sheet 5 Rev.2.2,2015-11-17

Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD - 0.85 - V VGS=0V,IF=2.9A,Tf=25°C Reverse recovery time trr - 180 - ns VR=400V,IF=2.9A,diF/dt=100A/µs Reverse recovery charge Qrr - 1.2 - µC VR=400V,IF=2.9A,diF/dt=100A/µs Peak reverse recovery current Irrm - 12 - A VR=400V,IF=2.9A,diF/dt=100A/µs 500VCoolMOS™CEPowerTransistor IPD50R500CE Final Data Sheet 6 Rev.2.2,2015-11-17

5Electricalcharacteristicsdiagrams Powerdissipation(NonFullPAK) W] P[tot TC[°C] 500VCoolMOS™CEPowerTransistor IPD50R500CE Max.transientthermalimpedance(NonFullPAK) 70 101 60 50 0.5 100 0.2 40 W] K/ 0.1 [C 0.05 30 hJ Zt 0.02 10-1 20 0.01 single pulse 10 0 10-2 0 40 80 120 160 10-5 10-4 10-3 10-2 10-1 t [s] p P =f(T ) Z =f(t );parameter:D=t /T tot C thJC P p Safeoperatingarea(NonFullPAK)Tj=25°C Safeoperatingarea(NonFullPAK)Tj=80°C 102 102 1 µs 101 101 1 µs 10 µs 10 µs [A]D 100 1 ms100 µs [A]D 100 100 µs I I 1 ms 10 ms 10 ms DC 10-1 10-1 DC 10-2 10-2 100 101 102 103 100 101 102 103 V [V] V [V] DS DS I =f(V );T =25°C;D=0;parameter:t I =f(V );T =80°C;D=0;parameter:t D DS C p D DS C p Final Data Sheet 7 Rev.2.2,2015-11-17

Typ.outputcharacteristicsTj=25°C I[A]D VDS[V] 500VCoolMOS™CEPowerTransistor IPD50R500CE Typ.outputcharacteristicsTj=125°C 30 18 16 20 V 25 20 V 10 V 14 10 V 8 V 20 12 8 V 7 V 10 A] 15 [D I 8 7 V 6 V 10 6 5.5 V 6 V 4 5 5.5 V 5 V 5 V 2 4.5 V 4.5 V 0 0 0 5 10 15 20 0 5 10 15 20 V [V] DS I =f(V );T=25°C;parameter:V I =f(V );T=125°C;parameter:V D DS j GS D DS j GS Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance 1.80 1.4 1.2 1.60 5 V 5.5 V 6 V 6.5 V 7 V 1.0 98% 1.40 0.8 ] ] typ W[n) W[n) o o DS( DS( 0.6 R 1.20 R 10 V 0.4 1.00 0.2 0.80 0.0 0 5 10 15 -50 -25 0 25 50 75 100 125 150 175 I [A] T[°C] D j R =f(I );T=125°C;parameter:V R =f(T);I =2.3A;V =13V DS(on) D j GS DS(on) j D GS Final Data Sheet 8 Rev.2.2,2015-11-17

Typ.transfercharacteristics I[A]D VGS[V] 500VCoolMOS™CEPowerTransistor IPD50R500CE Typ.gatecharge 30 10 9 25 25 °C 120 V 8 7 400 V 20 6 V] 15 150 °C [GS 5 V 4 10 3 2 5 1 0 0 0 2 4 6 8 10 0 5 10 15 20 25 Q [nC] gate I =f(V );V =20V;parameter:T V =f(Q );I =2.9Apulsed;parameter:V D GS DS j GS gate D DD Avalancheenergy Drain-sourcebreakdownvoltage 140 580 120 560 100 540 J] 80 V] 520 [mS [SS) A D E 60 R( 500 B V 40 480 20 460 0 440 0 25 50 75 100 125 150 175 -60 -20 20 60 100 140 180 T[°C] T[°C] j j E =f(T);I =2.9A;V =50V V =f(T);I =1mA AS j D DD BR(DSS) j D Final Data Sheet 9 Rev.2.2,2015-11-17

Typ.capacitances C[pF] VDS[V] 500VCoolMOS™CEPowerTransistor IPD50R500CE Typ.Cossstoredenergy 104 3.0 2.5 103 Ciss 2.0 J] µ 102 [s 1.5 s o E Coss 1.0 101 Crss 0.5 100 0.0 0 100 200 300 400 500 0 100 200 300 400 500 V [V] DS C=f(V );V =0V;f=1MHz E =f(V ) DS GS oss DS Forwardcharacteristicsofreversediode 102 101 A] 125 °C [F 25 °C I 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 V [V] SD I =f(V );parameter:T F SD j Final Data Sheet 10 Rev.2.2,2015-11-17

6TestCircuits Table8Diodecharacteristics Table9Switchingtimes 500VCoolMOS™CEPowerTransistor IPD50R500CE Test circuit for diode characteristics Diode recovery waveform V,I R 1 g V DS(peak) V DS V DS V t DS I rr F t t F S R 2 dI /dt g F I F t QF QS 10%Irrm TableIF10Unclampedinductiveload I dIrr/dt trr =tF +tS rrm Q =Q +Q R 1 = R 2 rr F S g g Switching times test circuit for inductive load Switching times waveform V DS 90% V DS V GS 10% V GS td(on) tr td(off) tf ton toff Final Data Sheet 11 Rev.2.2,2015-11-17

7PackageOutlines 500VCoolMOS™CEPowerTransistor IPD50R500CE *)moldflashnotincluded MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.16 2.41 0.085 0.095 A1 0.00 0.15 0.000 0.006 b 0.64 0.89 0.025 0.035 b2 0.65 1.15 0.026 0.045 DOCUMENTNO. b3 5.00 5.50 0.197 0.217 Z8B00003328 c 0.46 0.60 0.018 0.024 c2 0.46 0.98 0.018 0.039 SCALE 0 D 5.97 6.22 0.235 0.245 D1 5.02 5.84 0.198 0.230 2.0 E 6.40 6.73 0.252 0.265 E1 4.70 5.60 0.185 0.220 0 2.0 e 2.29(BSC) 0.090(BSC) 4mm e1 4.57(BSC) 0.180(BSC) N 3 3 EUROPEANPROJECTION H 9.40 10.48 0.370 0.413 L 1.18 1.70 0.046 0.067 L3 0.90 1.25 0.035 0.049 L4 0.51 1.00 0.020 0.039 F1 10.60 0.417 F2 6.40 0.252 ISSUEDATE F3 2.20 0.087 01-09-2015 F4 5.80 0.228 F5 5.76 0.227 REVISION F6 1.20 0.047 05 Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 12 Rev.2.2,2015-11-17

8AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com 500VCoolMOS™CEPowerTransistor IPD50R500CE Final Data Sheet 13 Rev.2.2,2015-11-17

RevisionHistory IPD50R500CE Revision:2015-11-17,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-06-29 Release of final version 2.1 2013-07-16 update to Halogen free mold compound 2.2 2015-11-17 Updated to qualified for standard grade & updated package drawing WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 500VCoolMOS™CEPowerTransistor IPD50R500CE Final Data Sheet 14 Rev.2.2,2015-11-17

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