IPD30N03S4L-14 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 13.6 mΩ DS(on),max I 30 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N03S4L-14 PG-TO252-3-11 4N03L14 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current1) ID TC=25 °C, VGS=10 V 30 A T =100 °C, C 27 V =10 V2) GS Pulsed drain current2) ID,pulse TC=25 °C 120 Avalanche energy, single pulse E I =30 A 16 mJ AS D Avalanche current, single pulse I T =25 °C 30 A AS C Gate source voltage V ±16 V GS Power dissipation P T =25 °C 31 W tot C Operating and storage temperature T , T -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 2.1 page 1 2008-04-18

IPD30N03S4L-14 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R - - 4.9 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 6 cm2 cooling area3) - - 40 Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I = 1 mA 30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =10 µA 1.0 1.5 2.2 GS(th) DS GS D V =30 V, V =0 V, Zero gate voltage drain current I DS GS - 0.01 1 µA DSS T =25 °C j V =30 V, V =0 V, DS GS - 10 1000 T =125 °C2) j V =18 V, V =0 V, DS GS - 5 60 T =85 °C2) j Gate-source leakage current I V =16 V, V =0 V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =15 A - 16.1 20.5 mΩ DS(on) GS D V =10 V, I =30 A - 11.2 13.6 GS D Rev. 2.1 page 2 2008-04-18

IPD30N03S4L-14 Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics2) Input capacitance C - 750 980 pF iss V =0 V, V =25 V, Output capacitance C GS DS - 190 250 oss f=1 MHz Reverse transfer capacitance C - 10 20 rss Turn-on delay time t - 3 - ns d(on) Rise time tr V =15 V, V =10 V, - 2 - DD GS I =30 A, R =3.5 Ω Turn-off delay time t D G - 12 - d(off) Fall time t - 2 - f Gate Charge Characteristics2) Gate to source charge Q - 2.2 3 nC gs Gate to drain charge Qgd V =24 V, I =30 A, - 1.4 3 DD D V =0 to 10 V Gate charge total Q GS - 11 14 g Gate plateau voltage V - 3.4 - V plateau Reverse Diode Diode continous forward current2) IS - - 30 A T =25 °C C Diode pulse current2) IS,pulse - - 120 V =0 V, I =30 A, Diode forward voltage V GS F 0.6 0.95 1.3 V SD T =25 °C j V =15 V, I =I , Reverse recovery time2) trr diR/dt=100 FA/µSs - 12 - ns F Reverse recovery charge2) Qrr - 10 - nC 1) Current is limited by bondwire; with an R = 4.9K/W the chip is able to carry 38A at 25°C. For detailed information thJC see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 3 2008-04-18

IPD30N03S4L-14 1 Power dissipation 2 Drain current P = f(T ); V ≥ 6 V I = f(T ); V ≥ 6 V tot C GS D C GS 40 35 30 30 25 20 ] W A] [ot 20 [D Pt I 15 10 10 5 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I = f(V ); T = 25 °C; D = 0 Z = f(t ) D DS C thJC p parameter: t parameter: D=t /T p p 1000 101 0.5 100 0.1 1 µs 100 0.05 10 µs ] W 0.01 A] K/ [D 100 µs [C 10-1 I hJ t Z single pulse 10 1 ms 10-2 1 10-3 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p Rev. 2.1 page 4 2008-04-18

IPD30N03S4L-14 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I = f(V ); T = 25 °C R = f(I ); T = 25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 120 40 3.5 V 4 V 10 V 5 V 4.5 V 100 35 4.5 V 80 30 Ω] m [A]D 60 [on) 25 I 4 V S( D R 40 20 3.5 V 5 V 20 15 3 V 2.5 V 10 V 0 10 0 1 2 3 4 5 6 0 20 40 60 80 100 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I = f(V ); V = 6V R = f(T ); I = 30 A; V = 10 V D GS DS DS(on) j D GS parameter: T j 120 20 -55 °C 25 °C 175 °C 100 18 80 16 ] Ω m A] [ [D 60 on) 14 I S( D R 40 12 20 10 0 8 1 2 3 4 5 6 -60 -20 20 60 100 140 180 V [V] GS T [°C] j Rev. 2.1 page 5 2008-04-18

IPD30N03S4L-14 9 Typ. gate threshold voltage 10 Typ. capacitances V = f(T ); V = V C = f(V ); V = 0 V; f = 1 MHz GS(th) j GS DS DS GS parameter: I D 2 103 Ciss 1.75 100 µA Coss 1.5 10 µA F] 102 p 1.25 [ C ] V [ h) 1 S(t G V 0.75 Crss 101 0.5 0.25 100 0 0 5 10 15 20 25 30 -60 -20 20 60 100 140 180 V [V] T [°C] DS j 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(V ) I = f(t ) SD A S AV parameter: T parameter: T j j(start) 103 100 25 °C 102 10 100 °C 150 °C A] A] [F [AV I I 101 1 175 °C 25 °C 100 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000 VSD [V] tAV [µs] Rev. 2.1 page 6 2008-04-18

IPD30N03S4L-14 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E = f(T ) V = f(T ); I = 1 mA AS j BR(DSS) j D parameter: I D 70 34 60 33 7.5 A 50 32 ] mJ] 40 [VS) [AS R(DS 31 E 30 B V 15 A 30 20 30 A 29 10 0 28 25 75 125 175 -55 -15 25 65 105 145 T [°C] T [°C] j j 15 Typ. gate charge 16 Gate charge waveforms V = f(Q ); I = 30 A pulsed GS gate D parameter: V DD 10 V GS 9 6 V Q g 24 V 8 7 6 ] V [S 5 G V V 4 gs(th) 3 2 Qg(th) Qsw Qgate 1 Q Q 0 gs gd 0 2 4 6 8 10 12 Q [nC] gate Rev. 2.1 page 7 2008-04-18

IPD30N03S4L-14 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 8 2008-04-18

IPD30N03S4L-14 Revision History Version Date Changes Update of type and marking in Revision 2.1 18.04.2008 table on page one Rev. 2.1 page 9 2008-04-18

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