IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS™ Power-Transistor ProductSummary Features V 75 V DS •N-channelLogicLevel-Enhancementmode R (SMDversion) 6.8 mW DS(on),max •AutomotiveAECQ101qualified I 80 A D •MSL1upto260°Cpeakreflow •175°Coperatingtemperature PG-TO263-3-2 PG-TO220-3-1 •Greenpackage(leadfree) •UltralowRds(on) •100%Avalanchetested Type Package OrderingCode Marking IPB80N08S2L-07 PG-TO263-3-2 SP0002-19051 2N08L07 IPP80N08S2L-07 PG-TO220-3-1 SP0002-19050 2N08L07 Maximumratings,atT =25°C,unlessotherwisespecified j Parameter Symbol Conditions Value Unit Continuousdraincurrent1) ID TC=25°C,VGS=10V1) 80 A T =100°C, C 80 V =10V2) GS Pulseddraincurrent2) ID,pulse TC=25°C 320 Avalancheenergy,singlepulse2) EAS ID=80A 810 mJ Gatesourcevoltage V ±20 V GS Powerdissipation P T =25°C 300 W tot C Operatingandstoragetemperature T ,T -55...+175 °C j stg IECclimaticcategory;DINIEC68-1 55/175/56 Rev.1.1 page1 2014-03-07

IPB80N08S2L-07 IPP80N08S2L-07 Parameter Symbol Conditions Values Unit min. typ. max. Thermalcharacteristics2) Thermalresistance,junction-case R - - 0.5 K/W thJC Thermalresistance,junction- R - - 62 ambient,leaded thJA SMDversion,deviceonPCB R minimalfootprint - - 62 thJA 6cm2coolingarea3) - - 40 Electricalcharacteristics,atT =25°C,unlessotherwisespecified j Staticcharacteristics Drain-sourcebreakdownvoltage V V =0V,I =1mA 75 - - V (BR)DSS GS D Gatethresholdvoltage V V =V ,I =250µA 1.2 1.6 2.0 GS(th) DS GS D V =75V,V =0V, Zerogatevoltagedraincurrent I DS GS - 0.01 1 µA DSS T =25°C j V =75V,V =0V, DS GS - 1 100 T =125°C2) j Gate-sourceleakagecurrent I V =20V,V =0V - 1 100 nA GSS GS DS Drain-sourceon-stateresistance R V =4.5V,I =80A - 6.6 9 mW DS(on) GS D V =4.5V,I =80A, GS D - 6.3 8.7 SMDversion Drain-sourceon-stateresistance RDS(on) VGS=10V,ID=80A - 5.1 7.1 mΩ V =10V,I =80A, GS D - 4.8 6.8 SMDversion Rev.1.1 page2 2014-03-07

IPB80N08S2L-07 IPP80N08S2L-07 Parameter Symbol Conditions Values Unit min. typ. max. Dynamiccharacteristics2) Inputcapacitance C - 5400 - pF iss V =0V,V =25V, Outputcapacitance C GS DS - 1300 - oss f=1MHz Reversetransfercapacitance C - 590 - rss Turn-ondelaytime t - 19 - ns d(on) Risetime tr V =40V,V =10V, - 55 - DD GS I =80A,R =1.1W Turn-offdelaytime t D G - 85 - d(off) Falltime t - 22 - f GateChargeCharacteristics2) Gatetosourcecharge Q - 18 23 nC gs Gatetodraincharge Qgd V =60V,I =80A, - 69 83 DD D V =0to10V Gatechargetotal Q GS - 183 233 g Gateplateauvoltage V - 3.4 - V plateau ReverseDiode Diodecontinousforwardcurrent2) IS - - 80 A T =25°C C Diodepulsecurrent2) IS,pulse - - 320 V =0V,I =80A, Diodeforwardvoltage V GS F - 0.9 1.3 V SD T =25°C j Reverserecoverytime2) trr - 95 120 ns V =40V,I =I , R F S di /dt=100A/µs F Reverserecoverycharge2) Qrr - 240 300 nC 1)Currentislimitedbybondwire;withanR =0.5K/W thechipisabletocarry135Aat25°C. thJC 2)Definedbydesign.Notsubjecttoproductiontest. 3)Deviceon40mmx40mmx1.5mmepoxyPCBFR4with6cm2(onelayer,70µmthick)copperareafordrain connection.PCBisverticalinstillair. Rev.1.1 page3 2014-03-07

IPB80N08S2L-07 IPP80N08S2L-07 1Powerdissipation 2Draincurrent P =f(T );V ≥ 4 V I =f(T );V ≥ 10 V tot C GS D C GS 350 80 300 250 60 200 ] W [ A] Ptot 150 [ID40 100 20 50 0 0 0 50 100 150 200 0 50 100 150 200 TC[°C] TC[°C] 3Safeoperatingarea 4Max.transientthermalimpedance I =f(V );T =25°C;D =0 Z =f(t ) D DS C thJC p parameter:t parameter:D=t /T p p 1000 100 1µs 0.5 10µs 100µs 1ms 100 10-1 0.1 ] W A] K/ [ [ 0.05 D C I hJ t Z 10 10-2 0.01 singlepulse 1 10-3 0.1 1 10 100 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p Rev.1.1 page4 2014-03-07

IPB80N08S2L-07 IPP80N08S2L-07 5Typ.outputcharacteristics 6Typ.drain-sourceon-stateresistance I =f(V );T =25°C R =(I );T =25°C D DS j DS(on) D j parameter:V parameter:V GS GS 300 20 10V 5V 4.5V 3V 3.5V 4V 4.5V 18 250 16 200 14 4V W] [A]D 150 [mon) 12 I S( D R 10 100 3.5V 8 5V 50 6 3V 10V 2.5V 0 4 0 2 4 6 0 100 200 300 400 V [V] I [A] DS D 7Typ.transfercharacteristics 8Typ.Forwardtransconductance I =f(V );V =6V g =f(I );T =25°C D GS DS fs D j parameter:T parameter:g j fs 400 250 200 300 150 A] S] [ 200 [ D fs I g 100 100 50 175°C 25°C -55°C 0 0 1 2 3 4 0 50 100 150 200 V [V] I [A] GS D Rev.1.1 page5 2014-03-07

IPB80N08S2L-07 IPP80N08S2L-07 9Typ.Drain-sourceon-stateresistance 10Typ.gatethresholdvoltage R =f(T ) V =f(T );V =V DS(ON) j GS(th) j GS DS parameter:I =80A;V =10V parameter:I D GS D 12 2.5 10 2 1250µA W] 8 1.5 m V] [ [ 250µA DS(on) GS(th) R 6 V 1 4 0.5 2 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11Typ.capacitances 12Typicalforwarddiodecharacteristicis C=f(V );V =0V;f =1MHz IF=f(V ) DS GS SD parameter:T j 104 103 Ciss 102 Coss F] A] [p 103 [ F C I Crss 175°C 25°C 101 102 100 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V [V] V [V] DS SD Rev.1.1 page6 2014-03-07

IPB80N08S2L-07 IPP80N08S2L-07 13Typicalavalancheenergy 14Typ.gatecharge E =f(T ) V =f(Q );I =80Apulsed AS j GS gate D parameter:I parameter:V D DD 3500 12 20A 15V 60V 3000 10 2500 8 ]2000 mJ V] [AS 40A [GS 6 E1500 V 4 1000 80A 2 500 0 0 25 75 125 175 0 40 80 120 160 200 T [°C] Q [nC] j gate 15Typ.drain-sourcebreakdownvoltage 16Gatechargewaveforms V =f(T );I =1mA BR(DSS) j D 86 VV GGSS QQ gg 81 V] [ S) S 76 D R( B V 71 QQ ggaattee QQ QQ ggss ggdd 66 -60 -20 20 60 100 140 180 T [°C] j Rev.1.1 page7 2014-03-07

IPB80N08S2L-07 IPP80N08S2L-07 Publishedby InfineonTechnologiesAG AmCampeon1-12 D-85579Neubiberg ©InfineonTechnologiesAG2014 AllRightsReserved. Attentionplease! Theinformationhereinisgiventodescribecertaincomponentsandshallnotbeconsideredas aguaranteeofcharacteristics. Termsofdeliveryandrightstotechnicalchangereserved. Weherebydisclaimanyandallwarranties,includingbutnotlimitedtowarrantiesofnon-infringement, regardingcircuits,descriptionsandchartsstatedherein. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactyour nearestInfineonTechnologiesOffice(www.infineon.com) Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances. Forinformationonthetypesinquestion,pleasecontactyournearestInfineonTechnologiesOffice. effectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplanted inthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail, itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Rev.1.1 page8 2014-03-07

IPB80N08S2L-07 IPP80N08S2L-07 RevisionHistory Version Date Changes Revision1.0 03.03.2006 FinalDataSheet Revision1.1 07.03.2014 SOAextended Rev.1.1 page9 2014-03-07

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