IPB60R165CP CoolMOS® Power Transistor Product Summary Features V @ T 650 V DS j,max • Lowest figure-of-merit R xQ ON g R 0.165 Ω DS(on),max • Ultra low gate charge Q 39 nC g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO263 CoolMOS CP is specially designed for: • Hard switching topologies for Server and Telecom Type Package Ordering Code Marking IPB60R165CP PG-TO263 SP000096439 6R165P Maximum ratings, at T=25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C 21 A D C T =100 °C 13 C Pulsed drain current2) ID,pulse TC=25 °C 61 Avalanche energy, single pulse E I =7.9 A, V =50 V 522 mJ AS D DD Avalanche energy, repetitive t 2),3) E I =7.9 A, V =50 V 0.79 AR AR D DD Avalanche current, repetitive t 2),3) I 7.9 A AR AR MOSFET dv/dt ruggedness dv/dt V =0...480 V 50 V/ns DS Gate source voltage V static ±20 V GS AC (f>1 Hz) ±30 Power dissipation P T =25 °C 192 W tot C Operating and storage temperature T, T -55 ... 150 °C j stg Rev. 2.1 page 1 2009-06-05

IPB60R165CP Maximum ratings, at T=25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous diode forward current I 12 A S T =25 °C C Diode pulse current2) IS,pulse 61 Reverse diode dv/dt4) dv/dt 15 V/ns Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 0.65 K/W thJC SMD version, device Thermal resistance, junction - R on PCB, minimal - - 62 ambient thJA footprint SMD version, device on PCB, 6 cm2cooling 35 area5) Soldering temperature, T reflow MSL 1 - - 260 °C reflowsoldering sold Electrical characteristics, at T=25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 µA 600 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =0.79 mA 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, Zero gate voltage drain current I DS GS - - 1 µA DSS T=25 °C j V =600 V, V =0 V, DS GS - 10 - T=150 °C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =12 A, Drain-source on-state resistance R GS D - 0.15 0.165 Ω DS(on) T=25 °C j V =10 V, I =12 A, GS D - 0.40 - T=150 °C j Gate resistance R f=1 MHz, open drain - 1.9 - Ω G Rev. 2.1 page 2 2007-11-22

IPB60R165CP Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 2000 - pF iss V =0 V, V =100 V, GS DS f=1 MHz Output capacitance C - 100 - oss Effective output capacitance, energy C - 83 - related6) o(er) V =0 V, V =0 V GS DS to 480 V Effective output capacitance, time C - 220 - related7) o(tr) Turn-on delay time t - 12 - ns d(on) V =400 V, Rise time t DD - 5 - r V =10 V, I =12 A, GS D Turn-off delay time td(off) RG=3.3 Ω - 50 - Fall time t - 5 - f Gate Charge Characteristics Gate to source charge Q - 9 - nC gs Gate to drain charge Qgd V =400 V, I =12 A, - 13.0 - DD D V =0 to 10 V Gate charge total Q GS - 39 52 g Gate plateau voltage V - 5.0 - V plateau Reverse Diode V =0 V, I =12 A, Diode forward voltage V GS F - 0.9 1.2 V SD T=25 °C j Reverse recovery time t - 390 - ns rr V =400 V, I =I , Reverse recovery charge Q R F S - 7.5 - µC rr di /dt=100 A/µs F Peak reverse recovery current I - 38 - A rrm 1) J-STD20 and JESD22 2) Pulse width t limited by T p j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P =E *f. AV AR 4) I ≤I , di/dt≤200A/µs,V =400V, V <V , T<T , identical low side and high side switch. SD D DClink peak (BR)DSS j jmax 5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air 6) C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 7) C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS DSS. Rev. 2.1 page 3 2007-11-22

IPB60R165CP 1 Power dissipation 2 Safe operating area P =f(T ) I =f(V ); T =25 °C; D=0 tot C D DS C parameter: t p 200 102 limited by on-state resistance 1 µs 10 µs 100 µs 150 101 1 ms [W]ot 100 [A]D DC Pt I 10 ms 100 50 0 10-1 0 40 80 120 160 100 101 102 103 T [°C] V [V] C DS 3 Max. transient thermal impedance 4 Typ. output characteristics Z =f(t ) I =f(V ); T=25 °C thJC p D DS j parameter: D=t /T parameter: V p GS 100 80 10V 12 V 20 V 0.5 60 8 V W] 0.2 [K/hJC 10-1 0.1 I [A]D 40 6 V t Z 0.05 0.02 5.5 V 0.01 20 5 V single pulse 4.5 V 10-2 0 10-5 10-4 10-3 10-2 10-1 100 0 5 10 15 20 25 t [s] V [V] p DS Rev. 2.1 page 4 2007-11-22

IPB60R165CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =f(V ); T=150 °C R =f(I ); T=150 °C D DS j DS(on) D j parameter: V parameter: V GS GS 40 1.2 20 V 10 V 8 V 6.5 V 12 V 6 V 1 5.5 V 30 10 V 0.8 6 V 5.5 V 5 V I [A]D 20 []ΩDS(on) 0.6 7 V 5 V R 0.4 10 4.5 V 0.2 0 0 0 5 10 15 20 25 0 10 20 30 40 50 VDS [V] ID [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R =f(T); I =12 A; V =10 V I =f(V ); |V |>2|I |R DS(on) j D GS D GS DS D DS(on)max parameter: T j 0.5 100 0.4 80 C °25 0.3 60 ] Ω [DS(on) 98% I [A]D R 0.2 40 typ C °150 0.1 20 0 0 -60 -20 20 60 100 140 180 0 2 4 6 8 10 T [°C] V [V] j GS Rev. 2.1 page 5 2007-11-22

IPB60R165CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V =f(Q ); I =12 A pulsed I =f(V ) GS gate D F SD parameter: V parameter: T DD j 10 102 25 °C, 98% 8 150 °C, 98% 120 V 25 °C 101 150 °C 400 V 6 [V]GS [A]F V I 4 100 2 0 10-1 0 10 20 30 40 0 0.5 1 1.5 2 Q [nC] V [V] gate SD 11 Avalanche energy 12 Drain-source breakdown voltage E =f(T); I =7.9 A; V =50 V V =f(T); I =0.25 mA AS j D DD BR(DSS) j D 600 700 660 400 [mJ]AS [V]R(DSS) 620 E B V 200 580 0 540 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j Rev. 2.1 page 6 2007-11-22

IPB60R165CP 13 Typ. capacitances 14 Typ. Coss stored energy C=f(V ); V =0 V; f=1 MHz E =f(V ) DS GS oss DS 105 14 12 104 10 Ciss 103 F] µJ] 8 C [p [oss 102 Coss E 6 4 101 2 Crss 100 0 0 100 200 300 400 500 0 100 200 300 400 500 600 V [V] V [V] DS DS Rev. 2.1 page 7 2007-11-22

IPB60R165CP Definition of diode switching characteristics Rev. 2.1 page 8 2007-11-22

IPB60R165CP PG-TO263-3-2/TO-263-3-5/TO263-3-22: Outlines Dimensions in mm/inches Rev. 2.1 page 9 2007-11-22

IPB60R165CP Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2007-11-22

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: IPB60R165CP IPB60R165CPATMA1