MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R160C6 DataSheet Rev.2.3 Final PowerManagement&Multimarket

600V CoolMOS" C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combinestheexperience of theleading SJMOSFET supplierwith highclassinnovation. Theoffereddevicesprovideallbenefitsof a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applicationsevenmoreefficient,morecompact,lighter,andcooler. Features • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss • Veryhighcommutationruggedness drain pin2 • Easytouse/drive • JEDEC1)qualified,Pb-freeplating,Halogenfree gate pin1 Applications PFC stages, hard switching PWM stages and resonant switching source PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, pin3 Lighting,Server,TelecomandUPS. Please note: For MOSFET paralleling the use of ferrite beads on thegateorseparatetotempolesisgenerallyrecommended. Table1 KeyPerformanceParameters Parameter Value Unit V @T 650 V DS j,max R 0.16 ! DS(on),max Q 75 nC g,typ I 70 A D,pulse E @400V 6 µJ oss Bodydiodedi/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks IPW60R160C6 PG-TO247 IFXC6ProductBrief IPB60R160C6 PG-TO263 6R160C6 IFXC6Portfolio IPP60R160C6 PG-TO220 IFXCoolMOSWebpage IPA60R160C6 PG-TO220FullPAK IFXDesigntools 1) J-STD20andJESD22 Rev. 2.3 Page 2 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 TableofContents Table of Contents 1 Description ... ....... ...... ....... ...... ...... ....... ...... ....... ......... .... . 2 TableofContents ..... ...... ....... ...... ...... ....... ............. ...... ....... . 3 2 Maximumratings ..... ...... ....... ...... ...... ....... ............. ...... ....... . 4 3 Thermalcharacteristics ...... ....... ...... ............. ...... ....... ...... ....... . 5 4 Electricalcharacteristics ..... ....... ...... ...... ....... ...... ....... ...... ....... . 6 5 Electricalcharacteristicsdiagrams ... ...... ...... ....... ...... ....... ...... ....... . 8 6 Testcircuits ... ....... ...... ....... ...... ...... ....... ...... ....... ............. 13 7 Packageoutlines ..... ...... ....... ...... ...... ....... ............. ...... ....... 14 8 RevisionHistory ...... ...... ....... ............ ....... ...... ....... ...... ....... 18 Rev. 2.3 Page 3 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Maximumratings 2 Maximum ratings atT =25°C, unlessotherwisespecified. j Table2 Maximumratings Parameter Symbol Values Unit Note/TestCondition Min. Typ. Max. Continuousdraincurrent1) I - - 23.8 A T =25°C D C 15 T =100°C C Pulseddraincurrent2) I - - 70 A T =25°C D,pulse C Avalancheenergy,singlepulse E - - 497 mJ I =4.1A,V =50V AS D DD (seetable21) Avalancheenergy,repetitive E - - 0.75 I =4.1A,V =50V AR D DD Avalanchecurrent,repetitive I - - 4.1 A AR MOSFETdv/dtruggedness dv/dt - - 50 V/ns V =0...480V DS Gatesourcevoltage V -20 - 20 V static GS -30 30 AC(f>1Hz) Powerdissipationfor P - - 176 W T =25°C tot C TO-220,TO-247,TO-263 Powerdissipationfor P - - 34 tot TO-220FullPAK Operatingandstoragetemperature T,T -55 - 150 °C j stg Mountingtorque - - 60 Ncm M3andM3.5screws TO-220,TO-247 Mountingtorque 50 M2.5screws TO-220FullPAK Continuousdiodeforwardcurrent I - - 20.6 A T =25°C S C Diodepulsecurrent2) I - - 70 A T =25°C S,pulse C Reversediodedv/dt3) dv/dt - - 15 V/ns V =0...400V,I "I , DS SD D T=25°C j Maximumdiodecommutation di/dt 500 A/µs f speed3) 1) LimitedbyT MaximumdutycycleD=0.75 j,max. 2) Pulsewidtht limitedbyT p j,max 3) IdenticallowsideandhighsideswitchwithidenticalR G FinalDataSheet 4 Rev.2.1,2010-02-09 Rev. 2.3 Page 4 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Thermalcharacteristics 3 Thermal characteristics Table3 ThermalcharacteristicsTO-220(IPP60R160C6),TO-247(IPW60R160C6) Parameter Symbol Values Unit Note/ TestCondition Min. Typ. Max. Thermalresistance, junction-case R - - 0.71 °C/W thJC Thermalresistance, junction- R - - 62 leaded thJA ambient Solderingtemperature, T - - 260 °C 1.6mm (0.063in.) sold wavesolderingonlyallowedat fromcasefor10s leads Table4 ThermalcharacteristicsTO-220FullPAK(IPA60R160C6) Parameter Symbol Values Unit Note/ TestCondition Min. Typ. Max. Thermalresistance, junction-case R - - 3.67 °C/W thJC Thermalresistance, junction- R - - 80 leaded thJA ambient Solderingtemperature, T - - 260 °C 1.6mm (0.063in.) sold wavesolderingonlyallowedat fromcasefor10s leads Table5 ThermalcharacteristicsTO-263(IPB60R160C6) Parameter Symbol Values Unit Note/ TestCondition Min. Typ. Max. Thermalresistance, junction-case R - - 0.71 °C/W thJC Thermalresistance, junction- R - - 62 SMDversion,device thJA ambient onPCB,minimal footprint - 35 - SMDversion,device onPCB,6cm2cooling area1) Solderingtemperature, T - - 260 °C reflowMSL1 sold wave-&reflowsolderingallowed 1) Deviceon40mm*40mm*1.5mmonelayerepoxyPCBFR4with6cm2copperarea(thickness70µm)fordrainconnection. PCBisverticalwithoutairstreamcooling. FinalDataSheet 5 Rev.2.1,2010-02-09 Rev. 2.3 Page 5 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Electricalcharacteristics 4 Electrical characteristics Electricalcharacteristics,at Tj=25°C,unlessotherwisespecified. Table6 Staticcharacteristics Parameter Symbol Values Unit Note/TestCondition Min. Typ. Max. Drain-sourcebreakdownvoltage V 600 - - V V =0V,I =0.25mA (BR)DSS GS D Gatethresholdvoltage V 2.5 3 3.5 V =V ,I =0.75mA GS(th) DS GS D Zerogatevoltagedraincurrent I - - 1 µA V =600V,V =0V, DSS DS GS T=25°C j - 10 - V =600V,V =0V, DS GS T=150°C j Gate-sourceleakagecurrent I - - 100 nA V =20V,V =0V GSS GS DS Drain-sourceon-stateresistance R - 0.14 0.16 ! V =10V,I =11.3A, DS(on) GS D T=25°C j - 0.37 - V =10V,I =11.3A, GS D T=150°C j Gateresistance R - 6.4 - ! f=1MHz,opendrain G Table7 Dynamiccharacteristics Parameter Symbol Values Unit Note/ TestCondition Min. Typ. Max. Input capacitance C - 1660 - pF V =0V,V =100V, iss GS DS Outputcapacitance C - 100 - f=1MHz oss Effectiveoutputcapacitance, C - 66 - V =0V, o(er) GS energyrelated1) V =0...480V DS Effectiveoutputcapacitance,time C - 314 - I =constant,V =0V o(tr) D GS related2) V =0...480V DS Turn-ondelaytime t - 13 - ns V =400V, d(on) DD Risetime t - 13 - VGS=13V,ID=11.3A, r R =1.7! Turn-offdelaytime t - 96 - G d(off) (seetable20) Falltime t - 8 - f 1) C isafixedcapacitancethatgivesthesamestoredenergyasC whileV isrisingfrom0to80%V o(er) oss DS (BR)DSS 2) C isafixedcapacitancethatgivesthesamechargingtimeasC whileV isrisingfrom0to80%V o(tr) oss DS (BR)DSS FinalDataSheet 6 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 6 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Electricalcharacteristics Table8 Gatechargecharacteristics Parameter Symbol Values Unit Note/ TestCondition Min. Typ. Max. Gatetosourcecharge Q - 9 - nC V =480V, gs DD Gatetodraincharge Q - 38 - ID=11.3A, gd V =0to10V Gatechargetotal Q - 75 - GS g Gateplateauvoltage V - 5.4 - V plateau Table9 Reversediodecharacteristics Parameter Symbol Values Unit Note/ TestCondition Min. Typ. Max. Diodeforwardvoltage V - 0.9 - V V =0V,I =11.3A, SD GS F T=25°C j Reverserecoverytime t - 460 - ns V =400V,I =11.3A, rr R F Reverserecoverycharge Q - 8.2 - µC diF/dt=100A/µs rr (seetable22) Peakreverserecoverycurrent I - 35 - A rrm FinalDataSheet 7 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 7 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Electricalcharacteristicsdiagrams 5 Electrical characteristics diagrams Table10 Powerdissipation Powerdissipation TO-220,TO-247, TO-263 TO-220FullPAK P =f(T ) P =f(T ) tot C tot C Table11 Max.transientthermalimpedance Max.transientthermal impedance TO-220,TO-247, TO-263 TO-220FullPAK Z =f(tp);parameter: D=t /T Z =f(tp);parameter:D=t /T (thJC) p (thJC) p FinalDataSheet 8 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 8 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Electricalcharacteristicsdiagrams Table12 SafeoperatingareaT =25°C SafeoperatingareaT =25°C C C TO-220,TO-247, TO-263 TO-220FullPAK I =f(V );T =25°C;D=0;parametert I =f(V );T =25°C;D=0;parametert D DS C p D DS C p Table13 SafeoperatingareaT =80°C SafeoperatingareaT =80°C C C TO-220,TO-247, TO-263 TO-220FullPAK I =f(V );T =80°C;D=0;parameter t I =f(V );T =80°C;D=0;parametert D DS C p D DS C p FinalDataSheet 9 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 9 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Electricalcharacteristicsdiagrams Table14 Typ.outputcharacteristicsT =25°C Typ. outputcharacteristics T=125°C C j I =f(V );T=25°C; parameter:V I =f(V );T=125°C;parameter: V D DS j GS D DS j GS Table15 Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance R =f(I );T=125°C;parameter: V R =f(T);I =11.3A;V =10V DS(on) D j GS DS(on) j D GS FinalDataSheet 10 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 10 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Electricalcharacteristicsdiagrams Table16 Typ.transfercharacteristics Typ. gatecharge I =f(V );V =20V V =f(Q ),I =11.3Apulsed D GS DS GS gate D Table17 Avalancheenergy Drain-sourcebreakdownvoltage E =f(T);I =4.1A;V =50V V =f(T);I =0.25mA AS j D DD BR(DSS) j D FinalDataSheet 11 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 11 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Electricalcharacteristicsdiagrams Table18 Typ.capacitances Typ. C storedenergy oss C=f(V );V =0V;f=1MHz E =f(V ) DS GS OSS DS Table19 Forwardcharacteristicsofreversediode I =f(V ); parameter: T F SD j FinalDataSheet 12 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 12 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Testcircuits 6 Test circuits Table20 Switchingtimestestcircuitandwaveformforinductiveload Switchingtimestestcircuitfor inductiveload Switchingtimewaveform V DS 90% V DS V GS 10% V GS td(on) tr td(off) tf t t on off Table21 Unclampedinductiveloadtestcircuitandwaveform Unclampedinductiveloadtestcircuit Unclampedinductivewaveform V (BR)DS V D I D V DS V V DS DS I D Table22 Testcircuitandwaveform for dioderecoverytimes Testcircuitfor dioderecoverytimes Dioderecoverywaveform I D # /# #/$ ) R $00($."$) G1 !00(!."!) $00 V ) $ $ DS . ) %$! $ RG2 !. !) --, --, /# #/$ 00 " ’$! --, --, R = R G1 G2 .*+$$$&& FinalDataSheet 13 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 13 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Packageoutlines 7 Package outlines Figure1 OutlinesTO-247,dimensionsinmm/inches FinalDataSheet 14 RReevv..22..12,,22001104--0122--0092 Rev. 2.3 Page 14 2018-02-26

600V CoolMOS" C6 Power Transistor IPx60R160C6 Packageoutlines Figure2 OutlinesTO-220,dimensionsinmm/inches FinalDataSheet 15 RReevv..22..21,,22001140--1022--0029 Rev. 2.3 Page 15 2018-02-26

6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J160=6 /45<487@DC=;?7B 1 2 3 MILLIMETERS DIMENSIONS MIN. MAX. DOCUMENTNO. A 4.50 4.90 Z8B00003319 A1 2.34 2.85 A2 2.42 2.86 REVISION b 0.65 0.90 07 b1 0.95 1.38 b2 0.95 1.51 SCALE 5:1 b3 0.65 1.38 0 1 2 3 4 5mm b4 0.65 1.51 c 0.40 0.63 D 15.67 16.15 D1 8.97 9.83 EUROPEANPROJECTION E 10.00 10.65 e 2.54 H 28.70 29.75 L 12.78 13.75 L1 2.83 3.45 øP 3.00 3.30 ISSUEDATE Q 3.15 3.50 27.01.2017 Figure 3 Outline PG­TO­220 FullPAKdimensionsinmm >X]P[<PcPKWTTc +6 JTe(,(,& ,*+.’12’02 Rev. 2.3 Page 16 2018-02-26

)$$3 *@@=-.1G *) /@E7A 2A4?B;BC@A ,/F)$0%)$*) /45<487@DC=;?7B +;8DA7( .DC=;?7B2."&)’!6;>7?B;@?B;?>>#;?597B *02-1)-3-,/..3 %’ +R.e4v#.&2#.%2!,&2$0%1$4"-$1&2"-$0(2 Rev. 2.3 Page 17 2018-02-26

RevisionHistory IPx60R160C6 Revision:2018-03-04,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2011-06-08 Release of final data sheet 2.1 2011-09-14 - 2.2 2015-02-03 PG-TO220 FullPAK package outline update (creation:2014-12-02) 2.3 2018-03-04 Outline PG-TO220 FullPAK update TrademarksofInfineonTechnologiesAG AEIPSSUaROOsRILMyFIIPDAXAIC™RMFEIL™,O™ACN,S1,E™H6Ics6™,oo™PnP,orA,SiBmCCPReaKOIPn™DCPAG™,ACEiK-K,W™™T™aE,,,fMEeCPrcPIr™PoiFmnO,EoeMSTDS™™IUTPA,AA,CCtLQh™oKi™no™Q,l,GE,M™acPoNoR,dn™TOSoRPT,FECAAENCoCToC™KKlHM™™,SOP,,TRmSEOO™cyPo--d,nS™™CoIL,Po,™ToINMrl,SioC™REvoAaT,rleES™it™hiIcC,IeC.C™D™oR,o,RIlSVOEiEmCAR™Ln™3iT,™,uCen,OueRRp™eeEv,cCeO™rOSP,NaTFvTICGeRO™AOS™,L™S™,aO,,tHRpCItIRTiCMFO™OES,STSS™™AIEV,,GHOEEy™RbTI,rG™iDdAP,A™SAVIC,EPPK™MO™O,WD,SIEI™n-RPfi,nOCSeOLom™Dna™E,rt™DL,rE,BWlaIdSe™™,, TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand 600VCoolMOSªC6PowerTransistor aineteronsdpeadcetodbeeviicmepolarnstyesdteinmthoerthouamffaenctbtohdeysoarfetotysourpepfofertcativnedn/oersmsaoifntthaaintdaenvdicseusotrasinysatnedm/o.rLipferosteucptphourtmdaenvilcifees.Iofrthseyystfeamil,sitairse reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. IPx60R160C6 18 Rev.2.3,2018-03-04

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