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IPB60R099CP产品简介:
ICGOO电子元器件商城为您提供IPB60R099CP由Infineon设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供IPB60R099CP价格参考以及InfineonIPB60R099CP封装/规格参数等产品信息。 你可以下载IPB60R099CP参考资料、Datasheet数据手册功能说明书, 资料中有IPB60R099CP详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 600V 31A D2PAKMOSFET COOL MOS PWR TRANS MAX 650V |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 31 A |
Id-连续漏极电流 | 31 A |
品牌 | Infineon Technologies |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,Infineon Technologies IPB60R099CPCoolMOS™ |
数据手册 | http://www.infineon.com/dgdl/IPB60R099CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ded51491b |
产品型号 | IPB60R099CP |
Pd-PowerDissipation | 255 W |
Pd-功率耗散 | 255 W |
Qg-GateCharge | 60 nC |
Qg-栅极电荷 | 60 nC |
RdsOn-Drain-SourceResistance | 99 mOhms |
RdsOn-漏源导通电阻 | 99 mOhms |
Vds-Drain-SourceBreakdownVoltage | 650 V |
Vds-漏源极击穿电压 | 650 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 20 V |
Vgs-栅源极击穿电压 | 20 V |
Vgsth-Gate-SourceThresholdVoltage | 3.5 V |
Vgsth-栅源极阈值电压 | 3.5 V |
上升时间 | 5 ns |
下降时间 | 5 ns |
不同Id时的Vgs(th)(最大值) | 3.5V @ 1.2mA |
不同Vds时的输入电容(Ciss) | 2800pF @ 100V |
不同Vgs时的栅极电荷(Qg) | 80nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 99 毫欧 @ 18A,10V |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=25212http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=25318 |
产品种类 | MOSFET |
供应商器件封装 | PG-TO263-3 |
其它名称 | IPB60R099CPDKR |
典型关闭延迟时间 | 60 ns |
功率-最大值 | 255W |
包装 | Digi-Reel® |
商标 | Infineon Technologies |
商标名 | CoolMOS |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
封装/箱体 | D2PAK-2 |
工厂包装数量 | 1000 |
晶体管极性 | N-Channel |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
标准包装 | 1 |
漏源极电压(Vdss) | 600V |
电流-连续漏极(Id)(25°C时) | 31A (Tc) |
系列 | IPB60R099 |
通道模式 | Enhancement |
配置 | Single |
零件号别名 | IPB60R099CPATMA1 SP000088490 |
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RevisionHistory IPB60R099CP Revision:2018-04-04,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2018-04-04 Updated package outline TrademarksofInfineonTechnologiesAG AEIPSSUaROOsRILMyFIIPDAXAIC™RMFEIL™,O™ACN,S1,E™H6Ics6™,oo™PnP,orA,SiBmCCPReaKOIPn™DCPAG™,ACEiK-K,W™™T™aE,,,fMEeCPrcPIr™PoiFmnO,EoeMSTDS™™IUTPA,AA,CCtLQh™oKi™no™Q,l,GE,M™acPoNoR,dn™TOSoRPT,FECAAENCoCToC™KKlHM™™,SOP,,TRmSEOO™cyPo--d,nS™™CoIL,Po,™ToINMrl,SioC™REvoAaT,rleES™it™hiIcC,IeC.C™D™oR,o,RIlSVOEiEmCAR™Ln™3iT,™,uCen,OueRRp™eeEv,cCeO™rOSP,NaTFvTICGeRO™AOS™,L™S™,aO,,tHRpCItIRTiCMFO™OES,STSS™™AIEV,,GHOEEy™RbTI,rG™iDdAP,A™SAVIC,EPPK™MO™O,WD,SIEI™n-RPfi,nOCSeOLom™Dna™E,rt™DL,rE,BWlaIdSe™™,, TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 600VCoolMOSªCPPowerTransistor IPB60R099CP 10 Rev.2.1,2018-04-04
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