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  • 型号: IPB60R099CP
  • 制造商: Infineon
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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IPB60R099CP产品简介:

ICGOO电子元器件商城为您提供IPB60R099CP由Infineon设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供IPB60R099CP价格参考以及InfineonIPB60R099CP封装/规格参数等产品信息。 你可以下载IPB60R099CP参考资料、Datasheet数据手册功能说明书, 资料中有IPB60R099CP详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 600V 31A D2PAKMOSFET COOL MOS PWR TRANS MAX 650V

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

31 A

Id-连续漏极电流

31 A

品牌

Infineon Technologies

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Infineon Technologies IPB60R099CPCoolMOS™

数据手册

http://www.infineon.com/dgdl/IPB60R099CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ded51491b

产品型号

IPB60R099CP

Pd-PowerDissipation

255 W

Pd-功率耗散

255 W

Qg-GateCharge

60 nC

Qg-栅极电荷

60 nC

RdsOn-Drain-SourceResistance

99 mOhms

RdsOn-漏源导通电阻

99 mOhms

Vds-Drain-SourceBreakdownVoltage

650 V

Vds-漏源极击穿电压

650 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

Vgsth-Gate-SourceThresholdVoltage

3.5 V

Vgsth-栅源极阈值电压

3.5 V

上升时间

5 ns

下降时间

5 ns

不同Id时的Vgs(th)(最大值)

3.5V @ 1.2mA

不同Vds时的输入电容(Ciss)

2800pF @ 100V

不同Vgs时的栅极电荷(Qg)

80nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

99 毫欧 @ 18A,10V

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=25212http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=25318

产品种类

MOSFET

供应商器件封装

PG-TO263-3

其它名称

IPB60R099CPDKR

典型关闭延迟时间

60 ns

功率-最大值

255W

包装

Digi-Reel®

商标

Infineon Technologies

商标名

CoolMOS

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

封装/箱体

D2PAK-2

工厂包装数量

1000

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1

漏源极电压(Vdss)

600V

电流-连续漏极(Id)(25°C时)

31A (Tc)

系列

IPB60R099

通道模式

Enhancement

配置

Single

零件号别名

IPB60R099CPATMA1 SP000088490

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PDF Datasheet 数据手册内容提取

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IPB60R CP 099 Figure 1 Outline PG­TO 263, dimensions in mm/inches Rev. 2.1 Page 9 2018-03-28

RevisionHistory IPB60R099CP Revision:2018-04-04,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2018-04-04 Updated package outline TrademarksofInfineonTechnologiesAG AEIPSSUaROOsRILMyFIIPDAXAIC™RMFEIL™,O™ACN,S1,E™H6Ics6™,oo™PnP,orA,SiBmCCPReaKOIPn™DCPAG™,ACEiK-K,W™™T™aE,,,fMEeCPrcPIr™PoiFmnO,EoeMSTDS™™IUTPA,AA,CCtLQh™oKi™no™Q,l,GE,M™acPoNoR,dn™TOSoRPT,FECAAENCoCToC™KKlHM™™,SOP,,TRmSEOO™cyPo--d,nS™™CoIL,Po,™ToINMrl,SioC™REvoAaT,rleES™it™hiIcC,IeC.C™D™oR,o,RIlSVOEiEmCAR™Ln™3iT,™,uCen,OueRRp™eeEv,cCeO™rOSP,NaTFvTICGeRO™AOS™,L™S™,aO,,tHRpCItIRTiCMFO™OES,STSS™™AIEV,,GHOEEy™RbTI,rG™iDdAP,A™SAVIC,EPPK™MO™O,WD,SIEI™n-RPfi,nOCSeOLom™Dna™E,rt™DL,rE,BWlaIdSe™™,, TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 600VCoolMOSªCPPowerTransistor IPB60R099CP 10 Rev.2.1,2018-04-04

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: IPB60R099CP IPB60R099CPATMA1