IPB05N03LA G OptiMOS®2 Power-Transistor Product Summary Features V 25 V DS • Ideal for high-frequency dc/dc converters R (SMD version) 4.6 mΩ DS(on),max • Qualified according to JEDEC1) for target application I 80 A D • N-channel - Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) PG-TO263 • Superior thermal resistance • 175 °C operating temperature • dv/dt rated • Pb-free lead plating; RoHS compliant Type Package Marking IPB05N03LA G PG-TO263 05N03LA Maximum ratings, at T=25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C2) 80 A D C T =100 °C 76 C Pulsed drain current I T =25 °C3) 385 D,pulse C Avalanche energy, single pulse E I =72 A, R =25 Ω 190 mJ AS D GS I =80 A, V =20 V, D DS Reverse diode dv/dt dv/dt di/dt=200 A/µs, 6 kV/µs T =175 °C j,max Gate source voltage4) VGS ±20 V Power dissipation P T =25 °C 94 W tot C Operating and storage temperature T, T -55 ... 175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 Rev. 1. 7 page 1 2006-05-10

IPB05N03LA G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.6 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 6 cm2 cooling area5) - - 40 Electrical characteristics, at T=25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 25 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =50 µA 1.2 1.6 2 GS(th) DS GS D V =25 V, V =0 V, Zero gate voltage drain current I DS GS - 0.1 1 µA DSS T=25 °C j V =25 V, V =0 V, DS GS - 10 100 T=125 °C j Gate-source leakage current I V =20 V, V =0 V - 1 100 nA GSS GS DS V =4.5 V, I =55 A, Drain-source on-state resistance R GS D - 6.2 7.8 mΩ DS(on) SMD version V =10 V, I =55 A, GS D - 3.8 4.6 SMD version Gate resistance R - 1 - Ω G |V |>2|I |R , Transconductance g DS D DS(on)max 43 86 - S fs I =55 A D 2) Current is limited by bondwire; with an R =1.6 K/W the chip is able to carry 108 thJC 3) See figure 3 4) T =150 °C and duty cycle D<0.25 for j,max V <-5 V GS 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 Rev. 1. 7 page 2 2006-05-10

IPB05N03LA G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 2413 3110 pF iss V =0 V, V =15 V, Output capacitance C GS DS - 921 1225 oss f=1 MHz Reverse transfer capacitance C - 112 167 rss Turn-on delay time t - 11 17 ns d(on) Rise time tr V =15 V, V =10 V, - 27 38 DD GS I =20 A, R =2.7 Ω Turn-off delay time t D G - 32 45 d(off) Fall time t - 4.6 6.9 f Gate Charge Characteristics6) Gate to source charge Q - 8.1 11 nC gs Gate charge at threshold Q - 3.9 5.0 g(th) Gate to drain charge Qgd V =15 V, I =40 A, - 5.3 8.0 DD D V =0 to 5 V Switching charge Q GS - 10 14 sw Gate charge total Q - 19 25 g Gate plateau voltage V - 3.4 - V plateau V =0.1 V, Gate charge total, sync. FET Q DS - 17 22 nC g(sync) V =0 to 5 V GS Output charge Q V =15 V, V =0 V - 20 27 oss DD GS Reverse Diode Diode continous forward current I - - 80 A S T =25 °C C Diode pulse current I - - 385 S,pulse V =0 V, I =80 A, Diode forward voltage V GS F - 0.97 1.2 V SD T=25 °C j V =15 V, I =I , Reverse recovery charge Q R F S - - 10 nC rr di /dt=400 A/µs F 6) See figure 16 for gate charge parameter definition Rev. 1. 7 page 3 2006-05-10

IPB05N03LA G 1 Power dissipation 2 Drain current P =f(T ) I =f(T ); V ≥10 V tot C D C GS 100 100 90 80 80 70 60 60 W] A] P [tot 50 I [D 40 40 30 20 20 10 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I =f(V ); T =25 °C; D=0 Z =f(t ) D DS C thJC p parameter: t parameter: D=t /T p p 1000 10 1 µs limited by on-state resistance 10 µs 1 0.5 100 0.2 100 µs W] 0.1 A] DC K/ [D [C 0.1 0.05 I 1 ms thJ 0.02 Z 0.01 single pulse 10 10 ms 0.01 1 0.001 0.1 1 10 100 010-6 100-5 100-4 10-03 10-20 10-1 0 100 1 V [V] t [s] DS p Rev. 1. 7 page 4 2006-05-10

IPB05N03LA G 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T=25 °C R =f(I ); T=25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 140 25 10 V 4.5 V 3.2 V 3.5 V 3.8 V 4.1 V 120 3 V 20 4.1 V 100 ]Ω 15 80 m A] 3.8 V [ [D on) I 60 DS( R 10 3.5 V 4.5 V 40 5 3.2 V 10 V 20 3 V 2.8 V 0 0 0 1 2 3 0 20 40 60 80 100 120 140 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I =f(V ); |V |>2|I |R g =f(I ); T=25 °C D GS DS D DS(on)max fs D j parameter: T j 160 120 140 100 120 80 100 A] S] [D 80 [fs 60 I g 60 40 40 20 20 175 °C 25 °C 0 0 0 1 2 3 4 5 0 20 40 60 80 V [V] I [A] GS D Rev. 1. 7 page 5 2006-05-10

IPB05N03LA G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R =f(T); I =55 A; V =10 V V =f(T); V =V DS(on) j D GS GS(th) j GS DS parameter: I D 10 2.5 9 8 2 7 500 µA m]Ω 6 98 % V] 1.5 R [DS(on) 45 typ V [GS(th) 1 50 µA 3 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. Capacitances 12 Forward characteristics of reverse diode C=f(V ); V =0 V; f=1 MHz I =f(V ) DS GS F SD parameter: T j 10000 1000 Ciss 175 °C Coss 25 °C 1000 100 175°C 98% pF] A] [ [F C I Crss 100 10 25°C 98% 10 1 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 V [V] V [V] DS SD Rev. 1. 7 page 6 2006-05-10

IPB05N03LA G 13 Avalanche characteristics 14 Typ. gate charge I =f(t ); R =25 Ω V =f(Q ); I =40 A pulsed AS AV GS GS gate D parameter: T parameter: V j(start) DD 100 12 25 °C 100 °C 15 V 150 °C 10 5 V 20 V 8 A] V] [V 10 [S 6 A G I V 4 2 1 0 1 10 100 1000 0 10 20 30 40 t [µs] Q [nC] AV gate 15 Drain-source breakdown voltage 16 Gate charge waveforms V =f(T); I =1 mA BR(DSS) j D 29 V GS 28 Q g 27 26 V] [S) 25 S D BR( 24 V V gs(th) 23 22 21 Qg(th) Qsw Qgate Q Q 20 gs gd -60 -20 20 60 100 140 180 T [°C] j Rev. 1. 7 page 7 2006-05-10

IPB05N03LA G PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines Footprint Packaging Rev. 1. 7 page 8 2006-05-10

IPB05N03LA G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1. 7 page 9 2006-05-10