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IP4085CX4; IP4385CX4; (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7) IP4386CX4; IP4387CX4 Integrated high-performance ESD protection diodes Rev. 2 — 14 December 2012 Product data sheet 1. Product profile 1.1 General description Integrated high-performance protection diodes protecting appliances against ElectroStatic Discharge(ESD) of 30 kV, far exceeding IEC61000-4-2 level4 standard, overvoltage and wrong polarity. Each device includes one high-level ESD protection diode in a 4-channel 0.4mm (IP438xCX4) or 0.5mm (IP4085CX4) pitch Wafer Level Chip-Size Package(WLCSP). The anode and the cathode of ESD protection diode are each connected to two solder balls. 1.2 Features and benefits  Single integrated high-performance ESD protection diode  Surge immunity according to IEC61000-4-5 (8/20 s) up to 60A (IP4085CX4)  ESD protection of >30kV contact discharge, far exceeding IEC61000-4-2, level4  Small 22 solder ball WLCSP package with 0.4mm or 0.5mm pitch 1.3 Applications General-purpose ESD protection such as for charger interfaces in:  Mobile handsets  Portable devices  Wireless data systems

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol A1 and A2 cathode bump A1 A1 A2 B1 and B2 anode index area 1 2 B1 B2 006aad220 A B 008aaa236 transparent top view, solder balls facing down 3. Ordering information Table 2. Ordering info rmation Type number Package Name Description Version IP4085CX4/LF/P WLCSP4 wafer level chip-size package: 4bumps(22)[1] IP4085CX4/LF/P IP4385CX4/LF wafer level chip-size package: 4bumps(22)[2] IP4385CX4/LF IP4386CX4/P IP4386CX4/P IP4387CX4/P IP4387CX4/P [1] Size: 0.910.910.65 mm [2] Size: 0.760.760.61 mm IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 2 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 4. Limiting values Table 3. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse standoff voltage IP4085CX4; IP4386CX4 0.5 +14 V RWM IP4385CX4 0.5 +5.5 V IP4387CX4 0.5 +8.0 V V electrostatic discharge voltage all pins to ground ESD contact discharge [1] 30 +30 kV air discharge [1] 15 +15 kV IEC 61000-4-2, level4; all pins to ground contact discharge 8 +8 kV air discharge 15 +15 kV I peak pulse current IEC 61000-4-5; t =8/20 s PP p IP4085CX4 60 - A IP4385CX4; IP4387CX4 33 - A IP4386CX4 28 - A I non-repetitive peak forward 10 pulses; 1 pulse per FSM current second IP4085CX4; IP4386CX4; 10 - A t =2ms p IP4085CX4; IP4386CX4; 8.5 - A t =5ms p IP4085CX4; IP4386CX4; 3.5 - A t =100ms p IP4385CX4; IP4387CX4; 11 - A t =2ms p IP4385CX4; IP4387CX4; 9 - A t =5ms p IP4385CX4; IP4387CX4; 5 - A t =100ms p P total power dissipation forward conducting [2] tot IP4085CX4 [3] - 1 W IP4385CX4; IP4386CX4; [3] - 0.7 W IP4387CX4 T storage temperature 55 +150 C stg T peak reflow temperature t 10 s - 260 C reflow(peak) p T ambient temperature 30 +85 C amb [1] Device tested with over 1000 pulses of 30kV contact discharges, according to the IEC61000-4-2 model. [2] Severe self-heating demands a heat-dissipation optimized Printed-Circuit Board (PCB) to prevent the device from de-soldering. For ambient temperature above 50 C, the guaranteed life time is 48 hours at 0.7 W, assuming Rth to be 130K/W as specified in Table4. [3] Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time. IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 3 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction on a 2-layer PCB [1] 130 K/W th(j-a) to ambient [1] Depends on details of PCB layout. 6. Characteristics Table 5. Electrical ch aracteristics T = 25 C; unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V breakdown voltage I = 15 mA BR R IP4085CX4; IP4386CX4 16 - - V IP4385CX4 7.0 - - V IP4387CX4 10 - - V V clamping voltage I =1A; T 85C at surge peak CL R amb pulse, according to IEC 61000-4-5 IP4085CX4 - - 20 V IP4385CX4 - - 10 V IP4386CX4 - - 20 V IP4387CX4 - - 13 V I reverse leakage current RM IP4085CX4; IP4385CX4 - - 200 nA V =+5V R IP4386CX4; V =+14V - - 200 nA R IP4387CX4; V =+8V - - 800 nA R C diode capacitance V =0 V; f=1 MHz d R IP4085CX4 - 180 - pF IP4385CX4 - 450 - pF IP4386CX4 - 160 - pF IP4387CX4 - 290 - pF V forward voltage I =850mA F F IP4085CX4 [1] - - 1.15 V [2] - - 1.3 V IP4385CX4 [1] - - 1.0 V [2] - - 1.1 V IP4386CX4 [1] - - 1.15 V [2] - - 1.3 V IP4387CX4 [1] - - 1.10 V [2] - - 1.25 V [1] Tamb  +25 C [2] 30 C  Tamb  +85 C IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 4 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 7. Application information 7.1 Forward current DC clamping voltage The forward current DC clamping voltage is an indicator of protection level of circuit from voltage sources with the wrong polarity. Figure1 shows basic measurement setup. IF VCL V 006aad221 Fig 1. Measuring DC clamping voltage with forward current 001aaj241 001aaj242 1.1 1.1 VCL VCL (V) (V) (1) 1.0 1.0 (1) (2) (2) 0.9 (3) 0.9 (3) 0.8 0.8 0.7 0.7 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 IF (A) IF (A) (1) Tamb = +25C (1) Tamb = +25C (2) Tamb = +85 C (2) Tamb = +85 C (3) Tamb = 30 C (3) Tamb = 30 C Fig 2. IP4085CX4: DC clamping voltage as a function Fig 3. IP4385CX4: DC clamping voltage as a function of forward current of forward current IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 5 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 001aaj243 001aaj244 1.1 1.1 VCL VCL (V) (1) (V) 1.0 1.0 (1) (2) (3) (2) 0.9 0.9 (3) 0.8 0.8 0.7 0.7 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 IF (A) IF (A) (1) Tamb = +25C (1) Tamb = +25C (2) Tamb = +85 C (2) Tamb = +85 C (3) Tamb = 30 C (3) Tamb = 30 C Fig 4. IP4386CX4: DC clamping voltage as a function Fig 5. IP4387CX4: DC clamping voltage as a function of forward current of forward current IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 6 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 7.2 Peak clamping voltage The peak clamping voltage for forward and reverse current pulses of 8/20s (IEC61000-4-5) is an indicator of protection level of circuits from power surges due to voltage discharges. The current pulse shape over time is shown in Figure7. The basic measurement setup for forward current and reverse current pulses respectively are shown in Figure6 and Figure12. VCL V IPP 006aad227 Fig 6. Measuring peak clamping voltage with forward current 001aaj558 120 IPP 100 % IPP; 8 μs (%) 80 e−t 50 % IPP; 20 μs 40 0 0 10 20 30 40 t (μs) Fig 7. 8/20 s current pulse waveform according to IEC 61000-4-5 IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 7 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 006aad222 006aad223 17 20 VCL (V) VCL 15 (V) (3) (1) 16 13 (3) 11 (2) 12 9 (1) (2) 7 8 20 28 36 44 20 28 36 44 IF (A) IF (A) (1) Tamb = +25C (1) Tamb = +25C (2) Tamb = +85 C (2) Tamb = +85 C (3) Tamb = 30 C (3) Tamb = 30 C Fig 8. IP4085CX4:peak clamping voltage as a Fig 9. IP4385CX4: peak clamping voltage as a function of forward current function of forward current 006aad224 006aad225 20 20 (3) (2) VCL (1) VCL (V) (V) 16 16 12 12 (2) (3) (1) 8 8 20 28 36 44 20 28 36 44 IF (A) IF (A) (1) Tamb = +25C (1) Tamb = +25C (2) Tamb = +85 C (2) Tamb = +85 C (3) Tamb = 30 C (3) Tamb = 30 C Fig 10. IP4386CX4: peak clamping voltage as a Fig 11. IP4387CX4: peak clamping voltage as a function of forward current function of forward current IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 8 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes VCL V IPP 006aad226 Fig 12. Measuring peak clamping voltage with reverse current 006aad228 006aad229 19 8.75 VCL VCL (2) (V) (V) 8.50 (2) 18 8.25 (1) (1) 8.00 (3) 17 (3) 7.75 16 7.50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.4 0.8 1.2 1.6 IR (A) IR (A) (1) Tamb = +25C (1) Tamb = +25C (2) Tamb = +85 C (2) Tamb = +85 C (3) Tamb = 30 C (3) Tamb = 30 C Fig 13. IP4085CX4: peak clamping voltage as a Fig 14. IP4385CX4: peak clamping voltage as a function of reverse current function of reverse current IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 9 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 006aad230 006aad231 19 12.2 (2) VCL VCL (V) (2) (V) 18 11.8 (1) (1) 17 11.4 (3) (3) 16 11.0 0.3 0.7 1.1 1.5 0.4 0.8 1.2 1.6 IR (A) IR (A) (1) Tamb = +25C. (1) Tamb = +25C. (2) Tamb = +85 C. (2) Tamb = +85 C. (3) Tamb = 30 C. (3) Tamb = 30 C. Fig 15. IP4386CX4: peak clamping voltage as a Fig 16. IP4387CX4: peak clamping voltage as a function of reverse current function of reverse current Measurements are done on a heat-dissipation optimized PCB with massive copper area under the Device Under Test(DUT). IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 10 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 8. Package outline WLCSP4: wafer level chip-size package; 4 bumps (2 x 2) D bump A1 index area A2 E A A1 detail X e b B e A 1 2 X European projection wlcsp4_2x2_po Fig 17. Package outline WLCSP4 Table 6. Package out line dimensions of IP4085CX4 (WLCSP4) Symbol Min Typ Max Unit A 0.60 0.65 0.70 mm A 0.22 0.24 0.26 mm 1 A 0.38 0.41 0.44 mm 2 b 0.27 0.32 0.37 mm D 0.86 0.91 0.96 mm E 0.86 0.91 0.96 mm e 0.5 0.5 0.5 mm IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 11 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes Table 7. Package out line dimensions of IP438xCX4 (WLCSP4) Symbol Min Typ Max Unit A 0.56 0.61 0.66 mm A 0.18 0.20 0.22 mm 1 A 0.38 0.41 0.44 mm 2 b 0.21 0.26 0.31 mm D 0.71 0.76 0.76 mm E 0.71 0.76 0.81 mm e 0.4 0.4 0.4 mm 9. Design and assembly recommendations 9.1 PCB design guidelines For optimum performance, use a Non-Solder Mask Defined (NSMD), also known as a copper-defined design, incorporating laser-drilled micro-vias connecting the ground pads to a buried ground-plane layer. This results in the lowest possible ground inductance and provides the best high frequency and ESD performance. Refer to Table8 for the recommended PCB design parameters. Table 8. Recommended PCB design parameters Parameter Value or Specification PCB pad diameter 200 m Micro-via diameter 100 m (0.004 inch) Solder mask aperture diameter 370 m Copper thickness 20 m to 40 m Copper finish AuNi PCB material FR4 9.2 PCB assembly guidelines for Pb-free soldering Table 9. Assembly recommendations Parameter Value or Specification Solder screen aperture diameter 330 m Solder screen thickness 100 m (0.004 inch) Solder paste: Pb-free SnAg (3% to 4%) Cu (0.5 % to 0.9%) Solder to flux ratio 50:50 Solder reflow profile see Figure18 IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 12 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes T (°C) Treflow(peak) 250 230 cooling rate 217 preheat t (s) t1 t2 t3 t4 t5 001aai943 The device is capable of withstanding at least three reflows of this profile. Fig 18. Pb-free solder reflow profile T able 10. Reflow soldering process characteristics Symbol Parameter Conditions Min Typ Max Unit T peak reflow temperature 230 - 260 C reflow(peak) t time 1 soak time 60 - 180 s 1 t time 2 time during T 250C - - 30 s 2 t time 3 time during T 230C 10 - 50 s 3 t time 4 time during T> 217C 30 - 150 s 4 t time 5 - - 540 s 5 dT/dt rate of change of cooling rate - - 6 C/s temperature pre-heat 2.5 - 4.0 C/s IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 13 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 10. Soldering D e c (4×) e E solder resist solder paste = solderland f occupied area (4×) Dimensions in mm wlcsp4_2x2_fr Fig 19. Reflow soldering footprint WLCSP4 Table 11. Soldering dim ensions of IP4085CX4 (WLCSP4) Symbol Min Typ Max Unit c - 0.31 - mm D 0.86 0.91 0.96 mm E 0.86 0.91 0.96 mm e - 0.5 - mm f - 0.385 - mm Table 12. Soldering dim ensions of IP438xCX4 (WLCSP4) Symbol Min Typ Max Unit c - 0.25 - mm D 0.71 0.76 0.81 mm E 0.71 0.76 0.81 mm e - 0.4 - mm f - 0.325 - mm IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 14 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 11. Revision history Table 13. Revision history Document ID Release Data sheet status Change Supersedes date notice IP4085_4385_4386_4387_CX4 v.2 20121214 Product data sheet - IP4085_4385_4386_4387_CX4 v.1 Modifications: • Basic type IP4085CX4/LF removed • Section 1 “Product profile”: updated • Section 2 “Pinning information”: updated • Functional diagram: removed • Table 3 “Limiting values”: updated • Table 5 “Electrical characteristics”. updated • Section 7 “Application information”. updated • Figure1, 6, 8 to 16: updated • Marking: removed • Section 8 “Package outline”: updated • Section 10 “Soldering”: added • Section 12 “Legal information”: updated IP4085_4385_4386_4387_CX4 v.1 20090326 Product data sheet - - IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 15 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 16 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes Export control — This document as well as the item(s) described herein In the event that customer uses the product for design-in and use in may be subject to export control regulations. Export might require a prior automotive applications to automotive specifications and standards, customer authorization from competent authorities. (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) Quick reference data — The Quick reference data is an extract of the whenever customer uses the product for automotive applications beyond product data given in the Limiting values and Characteristics sections of this NXP Semiconductors’ specifications such use shall be solely at customer’s document, and as such is not complete, exhaustive or legally binding. own risk, and (c) customer fully indemnifies NXP Semiconductors for any Non-automotive qualified products — Unless this data sheet expressly liability, damages or failed product claims resulting from customer design and states that this specific NXP Semiconductors product is automotive qualified, use of the product for automotive applications beyond NXP Semiconductors’ the product is not suitable for automotive use. It is neither qualified nor tested standard warranty and NXP Semiconductors’ product specifications. in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 December 2012 17 of 18

IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD protection diodes 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information. . . . . . . . . . . . . . . . . . . 5 7.1 Forward current DC clamping voltage . . . . . . . 5 7.2 Peak clamping voltage . . . . . . . . . . . . . . . . . . . 7 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 11 9 Design and assembly recommendations . . . 12 9.1 PCB design guidelines. . . . . . . . . . . . . . . . . . 12 9.2 PCB assembly guidelines for Pb-free soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13 Contact information. . . . . . . . . . . . . . . . . . . . . 17 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 December 2012 Document identifier: IP4085_4385_4386_4387_CX4