INA332 INA2332 INA332 INA2332® SBOS216B – SEPTEMBER 2001 - REVISED OCTOBER 2006 Low-Power, Single-Supply, CMOS INSTRUMENTATION AMPLIFIERS FEATURES APPLICATIONS (cid:1) DESIGNED FOR LOW COST (cid:1) INDUSTRIAL SENSOR AMPLIFIERS: (cid:1) HIGH GAIN ACCURACY: G = 5, 0.07%, 2ppm/°C Bridge, RTD, Thermocouple, Position (cid:1) GAIN SET WITH EXT. RESISTORS FOR > 5V/V (cid:1) PHYSIOLOGICAL AMPLIFIERS: ECG, EEG, EMG (cid:1) HIGH CMRR: 73dB DC, 50dB at 45kHz (cid:1) A/D CONVERTER SIGNAL CONDITIONING (cid:1) LOW BIAS CURRENT: 0.5pA (cid:1) DIFFERENTIAL LINE RECEIVERS WITH GAIN (cid:1) BANDWIDTH, SLEW RATE: 2.0MHz, 5V/µs (cid:1) FIELD UTILITY METERS (cid:1) RAIL-TO-RAIL OUTPUT SWING: (V+) – 0.02V (cid:1) PCMCIA CARDS (cid:1) WIDE TEMPERATURE RANGE: –55°C to +125°C (cid:1) AUDIO AMPLIFIERS (cid:1) LOW QUIESCENT CURRENT: 490µA max/chan (cid:1) COMMUNICATION SYSTEMS (cid:1) SHUTDOWN: 0.01µA (cid:1) TEST EQUIPMENT (cid:1) MSOP-8 SINGLE AND TSSOP-14 DUAL PACKAGES (cid:1) AUTOMOTIVE INSTRUMENTATION DESCRIPTION The INA332 and INA2332 are rail-to-rail output, low-power The INA332 rejects line noise and its harmonics because CMOS instrumentation amplifiers that offer wide range, single- common-mode error remains low even at higher frequencies. supply, and bipolar-supply operation. Using a special manu- High bandwidth and slew rate make the INA332 ideal for facturing flow, the INA332 family provides the lowest cost directly driving sampling Analog-to-Digital (A/D) converters available, while still achieving low-noise amplification of dif- as well as general-purpose applications. ferential signals with low quiescent current of 415µA (drop- ping to 0.01µA when shut down). Returning to normal opera- With high precision, low cost, and small packages, the INA332 outperforms discrete designs. tion within microseconds, this INA can be used for battery or multichannel applications. Additionally, because they are specified for a wide tempera- ture range of –55°C to +125°C, the INA332 family can be Configured internally in a gain of 5V/V, the INA332 offers used in demanding environments. flexibility in higher gains by choosing external resistors. R1 R2 G = 5 + 5(R2/R1) RG INA2332 40kΩ 10kΩ INA332 VREF 40kΩ Ch A 10kΩ A1 A3 VOUT VIN– A2 Ch B VIN+ V+ V– Shutdown Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 2001-2006, Texas Instruments Incorporated Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. www.ti.com

ABSOLUTE MAXIMUM RATINGS(1) ELECTROSTATIC Supply Voltage, V+ to V–....................................................................7.5V DISCHARGE SENSITIVITY Signal Input Terminals, Voltage(2).....................(V–) – 0.5V to (V+) + 0.5V Current(2).....................................................10mA Output Short-Circuit(3)..............................................................Continuous This integrated circuit can be damaged by ESD. Texas Instru- Operating Temperature..................................................–55°C to +125°C ments recommends that all integrated circuits be handled with Storage Temperature......................................................–65°C to +150°C appropriate precautions. Failure to observe proper handling Junction Temperature....................................................................+150°C and installation procedures can cause damage. NOTES: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade ESD damage can range from subtle performance degradation device reliability. (2) Input terminals are diode-clamped to the power-supply rails. to complete device failure. Precision integrated circuits may be Input signals that can swing more than 0.5V beyond the supply rails should be more susceptible to damage because very small parametric current limited to 10mA or less. (3) Short-circuit to ground, one amplifier per package. changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION(1) SPECIFIED PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY Single INA332AIDGK MSOP-8 DGK –55°C to +125°C B32 INA332AIDGKT Tape and Reel, 250 " " " " " INA332AIDGKR Tape and Reel, 2500 Dual INA2332AIPW TSSOP-14 PW –55°C to +125°C 2332A INA2332AIPWT Tape and Reel, 250 " " " " " INA2332AIPWR Tape and Reel, 2500 NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or see the TI web site at www.ti.com. PIN CONFIGURATION Top View INA2332 INA332 RGA 1 14 Shutdown A V –A 2 13 V A IN OUT RG 1 8 Shutdown V +A 3 12 REFA IN V – 2 7 V+ IN V– 4 11 V+ V + 3 6 V IN OUT V +B 5 10 REFB IN V– 4 5 REF V –B 6 9 V B IN OUT MSOP-8 (DGK) RGB 7 8 Shutdown B Dual, TSSOP-14 (PW) INA332, INA2332 2 www.ti.com SBOS216B

ELECTRICAL CHARACTERISTICS: V = +2.7V TO +5.5V S ° ° BOLDFACE limits apply over the specified temperature range, T = –55 C TO +125 C A At T = +25°C, R = 10kΩ, G = 25, and V = V /2, unless otherwise noted. A L CM S INA332AIDGK INA2332AIPW PARAMETER CONDITION MIN TYP MAX UNITS INPUT Input Offset Voltage, RTI V = +5V ±2 ±8 mV S Over Temperature V ±9 mV OS Temperature Coefficient dV /dT ±5 µV/°C OS vs Power Supply PSRR V = +2.7V to +5.5V ±50 ±250 µV/V S Over Temperature ±260 µV/V Long-Term Stability ±0.4 µV/month Input Impedance 1013 || 3 Ω || pF Input Common-Mode Range V = 2.7V 0.35 1.5 V S V = 5V 0.55 3.8 V S Common-Mode Rejection CMRR V = 5V, V = 0.55V to 3.8V 60 73 dB S CM Over Temperature V = 5V, V = 0.55V to 3.8V 60 dB S CM V = 2.7V, V = 0.35V to 1.5V 73 dB S CM Crosstalk, Dual 114 dB INPUT BIAS CURRENT V = V /2 CM S Bias Current I ±0.5 ±10 pA B Offset Current I ±0.5 ±10 pA OS NOISE, RTI R = 0Ω S Voltage Noise: f = 10Hz e 280 nV/√Hz N f = 100Hz 96 nV/√Hz f = 1kHz 46 nV/√Hz f = 0.1Hz to 10Hz 7 µVp-p Current Noise: f = 1kHz i 0.5 fA/√Hz N GAIN(1) Gain Equation, Externally Set G > 5 G = 5 + 5(R/R) 2 1 Range of Gain 5 1000 V/V Gain Error ±0.07 ±0.4 % vs Temperature G = 5 ±2 ±10 ppm/°C Nonlinearity G = 25, V = 5V, V = 0.05 to 4.95 ±0.001 ±0.010 % of FS S O Over Temperature ±0.002 ±0.015 % of FS OUTPUT Output Voltage Swing from Rail(2) G ≥ 10 50 25 mV Over Temperature 50 mV Capacitance Load Drive See Typical Characteristics(3) pF Short-Circuit Current I +48/–32 mA SC FREQUENCY RESPONSE Bandwidth, –3dB BW G = 25 2.0 MHz Slew Rate SR V = 5V, G = 25 5 V/µs S Settling Time, 0.1% t G = 25, C = 100pF, V = 2V step 1.7 µs S L O 0.01% 2.5 µs Overload Recovery 50% Input Overload G = 25 2 µs POWER SUPPLY Specified Voltage Range +2.7 +5.5 V Operating Voltage Range +2.5 to +5.5 V Quiescent Current per Channel I V > 2.5(4) 415 490 µA Q SD Over Temperature 600 µA Shutdown Quiescent Current/Chan I V < 0.8(4) 0.01 1 µA SD SD TEMPERATURE RANGE Specified/Operating Range –55 +125 °C Storage Range –65 +150 °C Thermal Resistance θ MSOP-8, TSSOP-14 Surface Mount 150 °C/W JA NOTES: (1)Does not include errors from external gain setting resistors. (2)Output voltage swings are measured between the output and power-supply rails. Output swings to rail only if G ≥ 10. Output does not swing to positive rail if gain is less than 10. (3)See typical characteristic curve, Percent Overshoot vs Load Capacitance. (4)See typical characteristic curve, Shutdown Voltage vs Supply Voltage. INA332, INA2332 3 SBOS216B www.ti.com

TYPICAL CHARACTERISTICS At T = +25°C, V = 5V, V = V /2, R = 10kΩ, and C = 100pF, unless otherwise noted. A S CM S L L COMMON-MODE REJECTION RATIO GAIN vs FREQUENCY vs FREQUENCY 80 120 70 100 60 Gain = 500 50 Gain = 100 80 Gain (dB) 432000 GGaaiinn == 255 MRR (dB) 60 C 40 10 0 20 –10 –20 0 10 100 1k 10k 100k 1M 10M 10 100 1k 10k 100k Frequency (Hz) Frequency (Hz) POWER-SUPPLY REJECTION RATIO vs FREQUENCY MAXIMUM OUTPUT VOLTAGE vs FREQUENCY 100 6 V = 5.5V S 90 8700 e (Vp-p) 5 VS = 5.0V g 4 a B) 60 olt d V R ( 50 ut 3 R p PS 40 Out VS = 2.7V 30 m 2 u m 20 axi 1 10 M 0 0 1 10 100 1k 10k 100k 100 1k 10k 100k 1M 10M Frequency (Hz) Frequency (Hz) NOISE vs FREQUENCY 0.1Hz TO 10Hz VOLTAGE NOISE 10k 100 √ (nV/Hz)OISE 1k 10 √ (fA/Hz)OISE µ2V/div N 100 1 N V I 10 0.1 1 10 100 1k 10k 100k 1s/div Frequency (Hz) INA332, INA2332 4 www.ti.com SBOS216B

TYPICAL CHARACTERISTICS (Cont.) At T = +25°C, V = 5V, V = V /2, R = 10kΩ, and C = 100pF, unless otherwise noted. A S CM S L L COMMON-MODE INPUT RANGE OUTPUT SWING vs LOAD RESISTANCE vs REFERENCE VOLTAGE 25 6 20 nd (V) 5 Outside of Normal Operation u mV) Gro 4 Rail ( 15 To Positive Rail ed to 3 Swing to 10 To Negative Rail ut—Referr 2 IncRreEaFsing 5 p ut 1 O 0 0 0 10k 20k 30k 40k 50k 0 1 2 3 4 5 R (Ω) Input Common-Mode Voltage (V) LOAD QUIESCENT CURRENT AND SHUTDOWN CURRENT QUIESCENT CURRENT AND SHUTDOWN CURRENT vs POWER SUPPLY vs TEMPERATURE 500 600 450 550 IQ 500 400 450 350 A) 400 I µA), I (nSD 322050000 µI (A)Q 332505000 Q I (Q 150 200 150 100 100 I 50 I 50 SD SD 0 0 2.5 3 3.5 4 4.5 5 5.5 –75 –50 –25 0 25 50 75 100 125 150 Supply Voltage (V) Temperature (°C) SHORT-CIRCUIT CURRENT vs POWER SUPPLY SHORT-CIRCUIT CURRENT vs TEMPERATURE 60 60 I I SC+ SC+ 50 50 40 40 A) ISC– A) ISC– m 30 m 30 (C (C S S I I 20 20 10 10 0 0 2.5 3 3.5 4 4.5 5 5.5 –75 –50 –25 0 25 50 75 100 125 150 Supply Voltage (V) Temperature (°C) INA332, INA2332 5 SBOS216B www.ti.com

TYPICAL CHARACTERISTICS (Cont.) At T = +25°C, V = 5V, V = V /2, R = 10kΩ, and C = 100pF, unless otherwise noted. A S CM S L L SMALL-SIGNAL STEP RESPONSE (G = 5) SMALL-SIGNAL STEP RESPONSE (G = 100) mV/div mV/div 100 50 4µs/div 4µs/div SMALL-SIGNAL STEP RESPONSE SMALL-SIGNAL STEP RESPONSE (G = 5, C = 1000pF) (G = 100, C = 1000pF) L L mV/div mV/div 100 50 4µs/div 10µs/div SMALL-SIGNAL STEP RESPONSE (G = 100, CL = 4700pF) LARGE-SIGNAL STEP RESPONSE (G = 25) v di v V/ di m V/ 0 1 5 10µs/div 10µs/div INA332, INA2332 6 www.ti.com SBOS216B

TYPICAL CHARACTERISTICS (Cont.) At T = +25°C, V = 5V, V = V /2, R = 10kΩ, and C = 100pF, unless otherwise noted. A S CM S L L SETTLING TIME vs GAIN PERCENT OVERSHOOT vs LOAD CAPACITANCE 60 100 Output 100mVp-p Output 2Vp-p 90 Differential Drive 50 Differential 80 Input Drive G = 5 µme (s) 40 0.01% ot (%) 7600 g Ti 30 sho 50 ettlin 20 Over 40 G = 25 S 30 20 10 0.1% 10 0 0 1 10 100 1k 10 100 1k 10k Gain (V/V) Load Capacitance (pF) SHUTDOWN VOLTAGE vs SUPPLY VOLTAGE SHUTDOWN TRANSIENT BEHAVIOR 3 Operation in this Region 2.5 Normal Operation Mode is not Recommended VSD 2 V) own ( 1.5 V/div d 1 ut h S 1 Shutdown Mode 0.5 VOUT Part Draws Below 1µA Quiescent Current 0 2.5 3 3.5 4 4.5 5 5.5 50µs/div Supply Voltage (V) OFFSET VOLTAGE DRIFT OFFSET VOLTAGE PRODUCTION DISTRIBUTION PRODUCTION DISTRIBUTION 25 20 18 %) 20 %) 16 s ( s ( er er 14 plifi 15 plifi 12 m m of A of A 10 ge 10 ge 8 a a nt nt 6 e e c c er 5 er 4 P P 2 0 0 098765432101234567890 431087643101346780134 1––––––––– 1 1111–––––– 1111 – –––– Offset Voltage (mV) Offset Voltage (µV/°C) INA332, INA2332 7 SBOS216B www.ti.com

TYPICAL CHARACTERISTICS (Cont.) At T = +25°C, V = 5V, V = V /2, R = 10kΩ, and C = 100pF, unless otherwise noted. A S CM S L L SLEW RATE vs TEMPERATURE INPUT BIAS CURRENT vs TEMPERATURE 8 10000 7 1000 6 A) µV/s) 5 ent (p 100 Rate ( 4 s Curr Slew 3 ut Bia 10 2 p n I 1 1 0 0.1 –75 –50 –25 0 25 50 75 100 125 150 –75 –50 –25 0 25 50 75 100 125 150 Temperature (°C) Temperature (°C) CHANNEL SEPARATION vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT 120 5 100 4 dB) 80 e (V) 3 n ( ag 125°C 25°C –55°C atio 60 Volt Separ 40 utput 2 O 1 20 0 0 1 10 100 1k 10k 100k 1M 10M 0 5 10 15 20 25 30 35 40 45 50 55 60 Frequency (Hz) Output Current (mA) INA332, INA2332 8 www.ti.com SBOS216B

APPLICATIONS INFORMATION OPERATING VOLTAGE The INA332 family is fully specified over a supply range of The INA332 is a modified version of the classic two op amp +2.7V to +5.5V, with key parameters tested over the tempera- instrumentation amplifier, with an additional gain amplifier. ture range of –55°C to +125°C. Parameters that vary signifi- Figure 1 shows the basic connections for the operation of the cantly with operating conditions, such as load conditions or INA332 and INA2332. The power supply should be capaci- temperature, are shown in the Typical Characteristics. tively decoupled with 0.1µF capacitors as close to the INA332 The INA332 may be operated on a single supply. Figure 2 as possible for noisy or high-impedance applications. shows a bridge amplifier circuit operated from a single +5V The output is referred to the reference terminal, which must supply. The bridge provides a small differential voltage riding be at least 1.2V below the positive supply rail. on an input common-mode voltage. G = 5 + 5 (R / R ) 2 1 DESIRED GAIN Short V to RG R1 for OGU T= 5 R2 (V/V) R1 R2 5 OPEN SHORT RG 10 100kΩ 100kΩ 1 50 10kΩ 90kΩ 40kΩ 10kΩ 100 10kΩ 190kΩ 5 REF 40kΩ A1 10kΩ 6 V – 2 A3 VO = ((VIN+) – (VIN –)) • G IN A2 3 V + IN Also drawn in simplified form: 8 7 4 V+ Shutdown Shutdown 0.1µF (FSour pSpinlyg)le 0.1µF VIN+ 3 7 8 REF 5 INA332 6 VOUT V+ V– 1 V – 2 IN 4 V– RG FIGURE 1. Basic Connections. +5V V+ V + Shutdown Bridge IN 3 7 Sensor 8 REF(1) 5 INA332 6 VOUT V – 1 IN 2 4 V– NOTE: (1) REF should be adjusted for the desired output level, RG keeping in mind that the value of REF affects the common-mode input range. See Typical Characteristics. FIGURE 2. Single-Supply Bridge Amplifier. INA332, INA2332 9 SBOS216B www.ti.com

SETTING THE GAIN For proper operation, a path must be provided for input bias The ratio of R to R , or the impedance between pins 1, 5, currents for both inputs. Without input bias current paths, the 2 1 and 6, determines the gain of the INA332. With an internally inputs will float to a potential that exceeds common-mode set gain of 5, the INA332 can be programmed for gains range and the input amplifier will saturate. Figure 3 shows greater than 5 according to the following equation: how bias current path can be provided in the cases of microphone applications, thermistor applications, ground re- turns, and dc-coupled resistive bridge applications. G = 5 + 5 (R /R ) 2 1 The INA332 is designed to provide accurate gain, with gain V+ Shutdown error less than 0.4%. Setting gain with matching TC resistors VIN+ 3 7 will minimize gain drift. Errors from external resistors will add Microphone, 8 directly to the error, and may become dominant error sources. Hydrophone, REF 5 INA332 6 VOUT etc. VIN– 2 1 4 COMMON-MODE INPUT RANGE 47kΩ The upper limit of the common-mode input range is set by the V– RG common-mode input range of the second amplifier, A2, to V (1) B 1.2V below positive supply. Under most conditions, the amplifier operates beyond this point with reduced perfor- mance. The lower limit of the input range is bounded by the output swing of amplifier A1, and is a function of the refer- V+ ence voltage according to the following equation: Shutdown VIN+ 3 7 8 VOA1 = 5/4 VCM – 1/4 VREF Transformer REF 5 INA332 6 VOUT VIN– 2 1 (See typical characteristic curve, Common-Mode Input Range 4 vs Reference Voltage). Center-tap VB(1) V– RG provides bias current return REFERENCE The reference terminal defines the zero output voltage level. V In setting the reference voltage, the common-mode input of Bridge EX Amplifier A3 should be considered according to the following equation: V+ Shutdown V + Bridge IN 3 7 V = V + 5 (V + – V –) Sensor OA2 REF IN IN 8 REF 5 INA332 6 VOUT For ensured operation, VOA2 should be less than VDD – 1.2V. VIN– 2 1 4 The reference pin requires a low-impedance connection. As little as 160Ω in series with the reference pin will degrade the V– RG Bridge resistance provides bias CMRR to 50dB. The reference pin may be used to compen- current return sate for the offset voltage (see the Offset Trimming section). NOTE: (1) V is bias voltage within The reference voltage level also influences the common- common-moBde range, dependent mode input range (see the Common-Mode Input Range on REF. section). FIGURE 3. Providing an Input Common-Mode Path. INPUT BIAS CURRENT RETURN When differential source impedance is low, the bias current With a high input impedance of 1013Ω, the INA332 is ideal for return path can be connected to one input. With higher use with high-impedance sources. The input bias current of source impedance, two equal resistors will provide a bal- less than 10pA makes the INA332 nearly independent of anced input. The advantages are lower input offset voltage input impedance and ideal for low-power applications. due to bias current flowing through the source impedance and better high-frequency gain. INA332, INA2332 10 www.ti.com SBOS216B

SHUTDOWN MODE +5V The shutdown pin of the INA332 is nominally connected to V+. When the pin is pulled below 0.8V on a 5V supply, the INA332 goes into sleep mode within nanoseconds. For actual shut- 0.1µF down threshold, see typical characteristic curve, Shutdown Voltage vs Supply Voltage. Drawing less than 2µA of current, V+ Shutdown 0.1µF V + 3 7 and returning from sleep mode in microseconds, the shutdown IN 8 V feature is useful for portable applications. Once in sleep mode, REF 5 INA332 6 OUT the amplifier has high output impedance, making the INA332 1 OPA340 V V – 2 OUT suitable for multiplexing. IN 4 V– RG RAIL-TO-RAIL OUTPUT A class AB output stage with common-source transistors is FIGURE 5. Output Buffering Circuit. Able to drive loads as used to achieve rail-to-rail output for gains of 10 or greater. low as 600Ω. For resistive loads greater than 10kΩ, the output voltage can swing to within 25mV of the supply rail while maintaining low gain error. For heavier loads and over temperature, see the V+ Shutdown typical characteristic curve, Output Voltage Swing vs Output V + 3 7 Current. The INA332’s low output impedance at high frequen- IN 8 cies makes it suitable for directly driving Capacitive-Input REF(1) 5 INA332 6 VOUT A/D converters, as shown in Figure 4. 1 V – 2 IN 4 V– RG +5V V+ Shutdown VIN+ 3 7 OPA336 Adjustable 8 V ADS7818 12-Bits Voltage REF 5 INA332 6 OUT or V – 2 1 ADS7822 NOTE: (1) REF should be adjusted for the desired output level. IN 4 The value of REF affects the common-mode input range. V– RG FIGURE 6. Optional Offset Trimming Voltage. f < 100kHz S INPUT PROTECTION FIGURE 4. INA332 Directly Drives Capacitive-Input, High- Device inputs are protected by ESD diodes that will conduct Speed A/D Converter. if the input voltages exceed the power supplies by more than 500mV. Momentary voltages greater than 500mV beyond OUTPUT BUFFERING the power supply can be tolerated if the current through the The INA332 is optimized for a load impedance of 10kΩ or input pins is limited to 10mA. This is easily accomplished with greater. For higher output current the INA332 can be buff- input resistor R , as shown in Figure 7. Many input signals LIM ered using the OPA340, as shown in Figure 5. The OPA340 are inherently current-limited to less than 10mA; therefore, a can swing within 50mV of the supply rail, driving a 600Ω load. limiting resistor is not required. The OPA340 is available in the tiny MSOP-8 package. OFFSET TRIMMING V+ Shutdown R The INA332 is laser trimmed for low offset voltage. In the LIM V + 3 7 event that external offset adjustment is required, the offset IN 8 can be adjusted by applying a correction voltage to the 1I0OmVEAR LmOaADx REF 5 INA332 6 VOUT reference terminal. Figure 6 shows an optional circuit for 1 V – 2 trimming offset voltage. The voltage applied to the REF IN 4 R terminal is added to the output signal. The gain from REF to LIM V– RG V is +1. An op amp buffer is used to provide low OUT impedance at the REF terminal to preserve good common- mode rejection. FIGURE 7. Sample Output Buffering Circuit. INA332, INA2332 11 SBOS216B www.ti.com

OFFSET VOLTAGE ERROR CALCULATION FEEDBACK CAPACITOR IMPROVES RESPONSE The offset voltage (V ) of the INA332AIDGK is specified at For optimum settling time and stability with high-impedance OS a maximum of 500µV with a +5V power supply and the feedback networks, it may be necessary to add a feedback common-mode voltage at V /2. Additional specifications for capacitor across the feedback resistor, R , as shown in S F power-supply rejection and common-mode rejection are pro- Figure 8. This capacitor compensates for the zero created by vided to allow the user to easily calculate worst-case ex- the feedback network impedance and the INA332’s RG-pin pected offset under the conditions of a given application. input capacitance (and any parasitic layout capacitance). Power-Supply Rejection Ratio (PSRR) is specified in µV/V. The effect becomes more significant with higher impedance For the INA332, worst case PSRR is 200µV/V, which means networks. Also, RX and CL can be added to reduce high- for each volt of change in power supply, the offset may shift frequency noise. up to 200µV. Common-Mode Rejection Ratio (CMRR) is specified in dB, which can be converted to µV/V using the V+ following equation: Shutdown CMRR (in µV/V) = 10[(CMRR in dB)/–20] • 106 VIN+ 3 7 8 INA332 R X For the INA332, the worst case CMRR over the specified REF 5 C 6 VOUT IN common-mode range is 60dB (at G = 25) or about 30µV/V 1 CL This means that for every volt of change in common-mode, V – 2 RG IN 4 the offset will shift less than 30µV. These numbers can be used to calculate excursions from the V– R R specified offset voltage under different application condi- IN F R • C = R •C tions. For example, an application might configure the ampli- IN IN F F C fier with a 3.3V supply with 1V common-mode. This configu- F ration varies from the specified configuration, representing a 1.7V variation in power supply (5V in the offset specification Where C is equal to the INA332’s input capacitance IN versus 3.3V in the application) and a 0.65V variation in (approximately 3pF) plus any parastic layout capacitance. common-mode voltage from the specified V /2. S FIGURE 8. Feedback Capacitor Improves Dynamic Perfor- Calculation of the worst-case expected offset would be as mance. follows: It is suggested that a variable capacitor be used for the Adjusted VOS = Maximum specified VOS + feedback capacitor since input capacitance may vary be- (power-supply variation) • PSRR + tween instrumentation amplifiers, and layout capacitance is (common-mode variation) • CMRR difficult to determine. For the circuit shown in Figure 8, the value of the variable feedback capacitor should be chosen by V = 0.5mV + (1.7V • 200µV) + (0.65V • 30µV) the following equation: OS = ±0.860mV R • C = R • C IN IN F F However, the typical value will be smaller, as seen in the Where C is equal to the INA332’s RG-pin input capacitance Typical Characteristics. IN (typically 3pF) plus the layout capacitance. The capacitor can be varied until optimum performance is obtained. INA332, INA2332 12 www.ti.com SBOS216B

APPLICATION CIRCUITS Filtering can be modified to suit application needs by chang- ing the capacitor value of the output filter. MEDICAL ECG APPLICATIONS Figure 9 shows the INA332 configured to serve as a low-cost LOW-POWER, SINGLE-SUPPLY DATA ECG amplifier, suitable for moderate accuracy heart-rate ACQUISITION SYSTEMS applications such as fitness equipment. The input signals are Refer to Figure 4 to see the INA332 configured to drive an obtained from the left and right arms of the patient. The ADS7818. Functioning at frequencies of up to 500kHz, the common-mode voltage is set by two 2MΩ resistors. This INA332 is ideal for low-power data acquisition. potential through a buffer provides optional right leg drive. V R OPA336 0.1µF 1.6nF V+ Shutdown 1MΩ Left Arm 100kΩ VIN+ 3 7 1MΩ 8 10kΩ REF 5 6 INA332 Right Arm 100kΩ VIN– 2 1 10kΩ OPA336 VOUT PUT 4 V R +5V V– RG 2MΩ 2MΩ 1MΩ 2kΩ V = +2.5V R Right OPA336 2kΩ Leg FIGURE 9. Simplified ECG Circuit for Medical Applications. INA332, INA2332 13 SBOS216B www.ti.com

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) INA2332AIPWR ACTIVE TSSOP PW 14 2500 Green (RoHS NIPDAU Level-2-260C-1 YEAR -55 to 125 INA & no Sb/Br) 2332A INA2332AIPWT ACTIVE TSSOP PW 14 250 Green (RoHS NIPDAU Level-2-260C-1 YEAR -55 to 125 INA & no Sb/Br) 2332A INA2332AIPWTG4 ACTIVE TSSOP PW 14 250 Green (RoHS NIPDAU Level-2-260C-1 YEAR -55 to 125 INA & no Sb/Br) 2332A INA332AIDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS NIPDAUAG Level-2-260C-1 YEAR -55 to 125 B32 & no Sb/Br) INA332AIDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS NIPDAUAG Level-2-260C-1 YEAR -55 to 125 B32 & no Sb/Br) INA332AIDGKT ACTIVE VSSOP DGK 8 250 Green (RoHS NIPDAUAG Level-2-260C-1 YEAR -55 to 125 B32 & no Sb/Br) INA332AIDGKTG4 ACTIVE VSSOP DGK 8 250 Green (RoHS NIPDAUAG Level-2-260C-1 YEAR -55 to 125 B32 & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) INA2332AIPWR TSSOP PW 14 2500 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 INA2332AIPWT TSSOP PW 14 250 180.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 INA332AIDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 INA332AIDGKT VSSOP DGK 8 250 180.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) INA2332AIPWR TSSOP PW 14 2500 367.0 367.0 35.0 INA2332AIPWT TSSOP PW 14 250 210.0 185.0 35.0 INA332AIDGKR VSSOP DGK 8 2500 367.0 367.0 35.0 INA332AIDGKT VSSOP DGK 8 250 210.0 185.0 35.0 PackMaterials-Page2

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