EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A (cid:122)Features (cid:122)External dimensions (Unit : mm) 1) Two DTA144Ys in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 EMB9 automatic mounting machines. 3) Transistor elements are independent, eliminating 0.22 ((54)) ((23))0.50.51.01.6 interference. (6) 1.2 (1) 1.6 4) Mounting cost and area can be cut in half. 0.13 0.5 Each lead has same dimensions ROHM : EMT6 (cid:122)Structure Abbreviated symbol : B9 Epitaxial planar type PNP silicon transistor (Built-in resistor type) UMB9N ()4 ()3 0.65 0.2 ()5 ()2 1.3 2.0 ()6 1.25 ()1 0.65 The following characteristics apply to both DTr1 and 2.1 DTr2. 0.15 0.7 0.9 0.1Min. 0to0.1 Each lead has same dimensions ROHM : UMT6 (cid:122)Equivalent circuit EIAJ : SC-88 Abbreviated symbol : B9 EMB9 / UMB9N IMB9A (3) (2) (1) (4) (5) (6) IMB9A R1 R2 R1 R2 R1=10kΩ DTr2 DTr1 DTr2 DTrR11=10kΩ 0.3 ()()65 ()()12 0.950.951.92.9 R2=47kΩ (4R)2 (R51) (6) (3R)2 (R21) (1)R2=47kΩ ()4 1.6 ()3 2.8 0.15 0.8 1.1 0.3to0.6 0to0.1 Each lead has same dimensions (cid:122)Absolute maximum ratings (Ta = 25°C) ROHM : SMT6 EIAJ : SC-74 Parameter Symbol Limits Unit Supply voltage VCC −50 V Abbreviated symbol : B9 −40 Input voltage VIN V 6 IO −70 Output current IC (Max.) −100 mA Power EMB9, UMB9N 150 (TOTAL) ∗1 Pd mW dissipation IMB9A 300 (TOTAL) ∗2 Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C ∗ ∗1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. 1/2

EMB9 / UMB9N / IMB9A Transistors (cid:122)Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions VI (off) − − −0.3 VCC=−5V, IO=−100µA Input voltage V VI (on) −1.4 − − VO=−0.3V, IO=−1mA Output voltage VO (on) − −0.1 −0.3 V IO/II=−5mA/−0.25mA Input current II − − −0.88 mA VI=−5V Output current IO (off) − − −0.5 µA VCC=−50V, VI=0V DC current gain GI 68 − − − VO=−5V, IO=−5mA Transition frequency fT − 250 − MHz VCE=−10mA, IE=5mA, f=100MHz ∗ Input resistance R1 7 10 13 kΩ − Resistance ratio R2 / R1 3.7 4.7 5.7 − − ∗ Transition frequency of the device (cid:122)Packaging specifications Package Taping Code T2R TN T148 Basic ordering 8000 3000 3000 Type unit (pieces) EMB9 UMB9N IMB9A (cid:122)Electrical characteristic curves −1−0500 VO=−0.3V −−105mm VCC=−5V 5010k Ta=100˚C VO=−5V (V)INPUT VOLTAGE : VI (on)−50−−021−−−m00215 Ta=1− 204500˚˚˚CCC (A)OUTPUT CURRENT : Io−−−−−−251−−−510002215000000mmµµµµµµµ Ta=1−024050˚˚˚CCC DC CURRENT GAIN : GI 2110052500000 −2450˚˚CC −200m −2µ 2 −100−m100µ−200µ−500µ−1m −2m −5m−10m−20m −50m−100m −1µ0 −0.5 −1 −1.5 −2 −2.5 −3 −1100µ−200µ−500µ−1m −2m −5m−10m−20m −50m−100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output (ON characteristics) (OFF characteristics) current −1000m lO/lI =20 −500m Ta=100˚C V)−200m 25˚C (VO (on)−100m −40˚C E : −50m G TA −20m OL V −10m UT −5m P T U O −2m −1m −100µ−200µ−500µ−1m −2m −5m−10m−20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/2

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