IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP40N65F5,IKW40N65F5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl

Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode  FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage ••LIGoBwTQcgopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration C G E C GCE G C E KeyPerformanceandPackageParameters Type V I V ,T =25°C T Marking Package CE C CEsat vj vjmax IKW40N65F5 650V 40A 1.6V 175°C K40EF5 PG-TO247-3 IKP40N65F5 650V 40A 1.6V 175°C K40EF5 PG-TO220-3 2 Rev.1.2,2013-12-18

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Package Drawing PG-TO247-pinGCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 3 Rev.1.2,2013-12-18

Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 650 V DTTCCC==c21o50lle°0Cc°Ctorcurrent,limitedbyTvjmax IC 7446..00 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A TurnoffsafeoperatingareaVCE£650V,Tvj£175°C - 120.0 A DTTCCio==de2150fo°0Cr°wCardcurrent,limitedbyTvjmax IF 3261..00 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A GTraatnes-eiemnitttGera tveo-letamgiettervoltage(tp£10µs,D<0.010) VGE ±±2300 V PPoowweerrddiissssiippaattiioonnTTCC==2150°0C°C Ptot 215250..00 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s PG-TO247-pinGCE 260 °C PG-TO220-3 260 MMoauxinmtiunmg toofr qmuoeu, nMti3n gs cprreowcesses: 3 M 0.6 Nm ThermalResistance Parameter SymbolConditions Max.Value Unit Characteristic IjuGnBcTti othne -r mcaasle resistance, Rth(j-c) 0.60 K/W Djuinocdteio tnh e- rcmasael resistance, Rth(j-c) 1.80 K/W Tjuhnecrtmioanl -r easmisbtiaenncte Rth(j-a) PPGG--TTOO224270--p3inGCE 4602 K/W IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 4 Rev.1.2,2013-12-18

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value Parameter SymbolConditions Unit min. typ. max. StaticCharacteristic Collector-emitter breakdown voltageV(BR)CES VGE=0V,IC=0.20mA 650 - - V Collector-emitter saturation voltage VCEsat VTTTvvvGjjjE====21115275°55C.°°0CCV,IC=40.0A --- 111...689000 2.--10 V Diode forward voltage VF VTTTvvvGjjjE====2110527V°55C°°,CCIF=20.0A --- 111...444500 1.--80 V Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VTTvvCjjE===216575°5C0°CV,VGE=0V -- -- 44000.00.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value Parameter SymbolConditions Unit min. typ. max. DynamicCharacteristic Input capacitance Cies - 2500 - Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 50 - pF Reverse transfer capacitance Cres - 9 - Gate charge QG VVCGCE==51250VV,IC=40.0A, - 95.0 - nC Imcnaetseaersnuarle edm 5itmtemr in(0d.u1c9t7a ninc.e) from LE PPGG--TTOO224270--p3inGCE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value Parameter SymbolConditions Unit min. typ. max. IGBTCharacteristic,atTvj=25°C TRTFuuaisrrllenn t --itoomimnfef eddeellaayy ttiimmee ttttdrdf((oonff)) TVVrCLGsvCGsj=CE,==C==12s354050.0.°f00prC0Wo/FV1,m,5,L.FI0sCiVg==.,23E00.n0HA,, ---- 111169360 ---- nnnnssss IKW40N65F5,IKP40N65F5 Turn-on energy Eon Energy losses include “tail” and - 0.36 - mJ Turn-off energy Eoff diode reverse recovery. - 0.10 - mJ Total switching energy Ets - 0.46 - mJ Highspeedswitchingseriesfifthgeneration 5 Rev.1.2,2013-12-18

TRTFuuaisrrllenn t --itoomimnfef eddeellaayy ttiimmee ttttdrdf((oonff)) TVVrCLGsvCGsj=CE,==C==12s354050.0.°f00prC0Wo/FV1,m,5,L.FI0sCiVg==.,53E.00nAH,, ---- 12147005 ---- nnnnssss Turn-on energy Eon Energy losses include “tail” and - 0.07 - mJ Turn-off energy Eoff diode reverse recovery. - 0.03 - mJ Total switching energy Ets - 0.10 - mJ DiodeCharacteristic,atTvj=25°C DDDiiiooodddeee rrpeeevvaeekrr ssreee vrreeerccsooevv eererryyc otcivmheaerryg ceurrenttQIrrrrmrr TVIdFivRFj=/==d2t240=50.0°01CAV0,,0,0A/µs --- 016.240.54 --- µnACs Dreicoodvee pryeacku rrraetnet odfu frainllg otfb reverse dirr/dt - -280 - A/µs DDDiiiooodddeee rrpeeevvaeekrr ssreee vrreeerccsooevv eererryyc otcivmheaerryg ceurrenttQIrrrrmrr TVIdFivRFj=/==d5t24.=050A°01C,V0,0,0A/µs --- 013.023.26 --- µnACs Dreicoodvee pryeacku rrraetnet odfu frainllg otfb reverse dirr/dt - -1030 - A/µs SwitchingCharacteristic,InductiveLoad Value Parameter SymbolConditions Unit min. typ. max. IGBTCharacteristic,atTvj=150°C TRTFuuaisrrllenn t --itoomimnfef eddeellaayy ttiimmee ttttdrdf((oonff)) TVVrCLGsvCGsj=CE,==C==11s354050.0.0f00pr0°Wo/FCV1m,5,,L.FI0sCiVg==.,23E00.n0HA,, ---- 121180455 ---- nnnnssss Turn-on energy Eon Energy losses include “tail” and - 0.50 - mJ Turn-off energy Eoff diode reverse recovery. - 0.16 - mJ Total switching energy Ets - 0.66 - mJ TRTFuuaisrrllenn t --itoomimnfef eddeellaayy ttiimmee ttttdrdf((oonff)) TVVrCLGsvCGsj=CE,==C==11s354050.0.0f00pr0°Wo/FCV1m,5,,L.FI0sCiVg==.,53E.00nAH,, ---- 21152820 ---- nnnnssss Turn-on energy Eon Energy losses include “tail” and - 0.14 - mJ Turn-off energy Eoff diode reverse recovery. - 0.05 - mJ IKW40N65F5,IKP40N65F5 Total switching energy Ets - 0.19 - mJ Highspeedswitchingseriesfifthgeneration 6 Rev.1.2,2013-12-18

DiodeCharacteristic,atTvj=150°C DDDiiiooodddeee rrpeeevvaeekrr ssreee vrreeerccsooevv eererryyc otcivmheaerryg ceurrenttQIrrrrmrr TVIdFivRFj=/==d2t140=50.0001A°V0C,0,,0A/µs --- 118.705.00 --- µnACs Dreicoodvee pryeacku rrraetnet odfu frainllg otfb reverse dirr/dt - -220 - A/µs DDDiiiooodddeee rrpeeevvaeekrr ssreee vrreeerccsooevv eererryyc otcivmheaerryg ceurrenttQIrrrrmrr TVIdFivRFj=/==d5t14.=050A001,°V0C0,,0A/µs --- 015.450.00 --- µnACs Dreicoodvee pryeacku rrraetnet odfu frainllg otfb reverse dirr/dt - -500 - A/µs IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 7 Rev.1.2,2013-12-18

I,COLLECTORCURRENT[A]C VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1.Forwardbiassafeoperatingarea (RDe=c0o,mTmC=e2n5d°eCd,uTsvje£1a7t5V°GCE;‡V7.G5EV=)15V. IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 275 100 250 225 W] 200 N[ O 175 10 TI tp=1µs PA SI 150 10µs S DI 50µs R 125 E W 100µs 100 O P 1 200µs ,ot 75 Pt 500µs 50 DC 25 0.1 0 1 10 100 1000 25 50 75 100 125 150 175 T ,CASETEMPERATURE[°C] C Figure 2.Powerdissipationasafunctionofcase temperature (T £ 175°C) vj 80 120 70 100 VGE=20V A] 60 A] T[ T[ 18V N N 80 E E 15V R 50 R R R U U 12V C C R 40 R 60 10V O O T T C C 8V E E L 30 L L L 7V O O 40 C C I,C 20 I,C 6V 5V 20 10 0 0 25 50 75 100 125 150 175 0 1 2 3 4 5 T ,CASETEMPERATURE[°C] V ,COLLECTOR-EMITTERVOLTAGE[V] C CE Figure 3.Collectorcurrentasafunctionofcase Figure 4.Typicaloutputcharacteristic temperature (T =25°C) vj (V ‡ 15V,T £ 175°C) GE vj 8 Rev.1.2,2013-12-18

I,COLLECTORCURRENT[A]C VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5.Typicaloutputcharacteristic (Tvj=150°C) IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 120 120 Tj=25°C Tj=150°C 100 100 VGE=20V A] 18V T[ 80 N 80 15V E R R 12V U C 60 10V R 60 O T 8V C E L 7V L 40 O 40 C 6V ,C I 5V 20 20 0 0 0 1 2 3 4 5 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 V ,GATE-EMITTERVOLTAGE[V] GE Figure 6.Typicaltransfercharacteristic (V =20V) CE 2.50 1000 IC=10A td(off) IC=20A tf V] 2.25 IC=40A td(on) N[ tr O ATI 2.00 R U s] SAT 1.75 ES[n 100 R M TTE 1.50 GTI MI N E HI R- C TO 1.25 WIT C S 10 LE t, L O 1.00 C ,at Es C 0.75 V 0.50 1 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 T ,JUNCTIONTEMPERATURE[°C] I ,COLLECTORCURRENT[A] vj C Figure 7.Typicalcollector-emittersaturationvoltageas Figure 8.Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (V =15V) (inductiveload,T =150°C,V =400V, GE vj CE V =15/0V,r =15W ,Dynamictestcircuitin GE G Figure E) 9 Rev.1.2,2013-12-18

MES[ns] WITCHINGTI t,S rG,GATERESISTOR[W] Figure 9.Typicalswitchingtimesasafunctionofgate resistor (VFiniGgdEu=ur1ce5t iEv/0e)Vl,oIaCd=,2T0vAj=,1D5y0n°aCm,iVcCtEe=s4t0c0irVcu,itin IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1000 1000 td(off) td(off) tf tf td(on) td(on) tr tr s] 100 n 100 S[ E M TI G N HI C T WI 10 S 10 t, 1 1 5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175 T ,JUNCTIONTEMPERATURE[°C] vj Figure 10.Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,V =400V,V =15/0V, CE GE I =20A,r =15W ,Dynamictestcircuitin C G Figure E) 5.5 8 typ. Eoff E[V] 5.0 mmianx.. 7 EEotsn G A J] T 4.5 m OL S[ 6 V E D 4.0 SS OL O 5 SH YL E 3.5 G R R H E 4 T N R 3.0 E E G MITT 2.5 CHIN 3 E T E- WI T 2 A 2.0 S G E, ,h) GE(t 1.5 1 V 1.0 0 0 25 50 75 100 125 150 0 20 40 60 80 100 120 T ,JUNCTIONTEMPERATURE[°C] I ,COLLECTORCURRENT[A] vj C Figure 11.Gate-emitterthresholdvoltageasafunction Figure 12.Typicalswitchingenergylossesasa ofjunctiontemperature functionofcollectorcurrent (I =0.4mA) (inductiveload,T =150°C,V =400V, C vj CE V =15/0V,r =15W ,Dynamictestcircuitin GE G Figure E) 10 Rev.1.2,2013-12-18

mJ] WITCHINGENERGYLOSSES[ E,S rG,GATERESISTOR[W] Figure 13.Typicalswitchingenergylossesasa functionofgateresistor (VFiniGgdEu=ur1ce5t iEv/0e)Vl,oIaCd=,2T0vAj=,1D5y0n°Cam,VicCEte=s4t0c0irVc,uitin IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1.6 0.8 Eoff Eoff Eon Eon 1.4 Ets 0.7 Ets J] m 1.2 S[ 0.6 E S S 1.0 O 0.5 L Y G R 0.8 E 0.4 N E G 0.6 N 0.3 HI C T WI 0.4 0.2 S E, 0.2 0.1 0.0 0.0 5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175 T ,JUNCTIONTEMPERATURE[°C] vj Figure 14.Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,V =400V,V =15/0V, CE GE I =20A,r =15W ,Dynamictestcircuitin C G Figure E) 1.0 16 Eoff 130V 0.9 Eon 520V Ets 14 J] 0.8 m V] S[ E[ 12 E 0.7 G S S A O LT 10 L 0.6 O Y V G R R E E 0.5 T 8 N T GE 0.4 EMI HIN TE- 6 C A T 0.3 G WI ,E 4 S G E, 0.2 V 2 0.1 0.0 0 200 250 300 350 400 450 500 0 20 40 60 80 100 V ,COLLECTOR-EMITTERVOLTAGE[V] Q ,GATECHARGE[nC] CE GE Figure 15.Typicalswitchingenergylossesasa Figure 16.Typicalgatecharge functionofcollectoremittervoltage (I =40A) C (inductiveload,T =150°C,V =15/0V, vj GE I =20A,r =15W ,Dynamictestcircuitin C G Figure E) 11 Rev.1.2,2013-12-18

C,CAPACITANCE[pF] VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 17.Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1E+4 1 Ciss CCorssss W] K/ E[ C D=0.5 1000 N A 0.2 T SIS 0.1 0.1 E 0.05 R L 0.02 A 100 M 0.01 R E single pulse H T T N E 0.01 SI N 10 A R T -,h(jc) Zt i: 1 2 3 4 rtii[[Ks]/:W ]: 07..038E2-54 5 484 07..104E4-41 9 7 00..20115213757544 8 00..10588012700888 1 1 0.001 0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 t ,PULSEWIDTH[s] p Figure 18.IGBTtransientthermalresistance (D=t /T) p 130 Tj=25°C, IF = 20A W] 1 120 Tj=150°C, IF = 20A K/ E[ C D=0.5 s] 110 N n A 0.2 E[ SIST 0.1 TIM 100 E 0.05 Y R 0.1 R AL 0.02 VE 90 M 0.01 O R C E single pulse E H R 80 T E T S N R E E 70 SI 0.01 V N E R A TR t,rr 60 -,h(jc) 50 Zt i: 1 2 3 rtii[[Ks]/:W ]: 03..647E0-41 5 84 04..777E5-37 5 9 00..30544608802960 1 0.001 40 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 500 700 900 1100 1300 1500 t ,PULSEWIDTH[s] di /dt,DIODECURRENTSLOPE[A/µs] p F Figure 19.Diodetransientthermalimpedanceasa Figure 20.Typicalreverserecoverytimeasafunction functionofpulsewidth ofdiodecurrentslope (D=t /T) (V =400V) p R 12 Rev.1.2,2013-12-18

Q,REVERSERECOVERYCHARGE[µC]rr diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21.Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1.2 20 Tj=25°C, IF = 20A 19 Tj=25°C, IF = 20A Tj=150°C, IF = 20A Tj=150°C, IF = 20A 18 1.0 A] 17 T[ N 16 E R R 15 U C 0.8 Y 14 R E 13 V O C 12 E 0.6 R 11 E S 10 R E V 9 E R 0.4 I,rr 8 7 6 0.2 5 500 700 900 1100 1300 1500 500 700 900 1100 1300 1500 di /dt,DIODECURRENTSLOPE[A/µs] F Figure 22.Typicalreverserecoverycurrentasa functionofdiodecurrentslope (V =400V) R 0 60 Tj=25°C, IF = 20A Tj=25°C Tj=150°C, IF = 20A Tj=150°C -50 50 s] µ A/ -100 ofI[rr NT[A] 40 all -150 RE eoff CUR krat -200 RD 30 a A e W p e -250 R od FO 20 dt,di -300 I,F dI/rr 10 -350 -400 0 500 700 900 1100 1300 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 di /dt,DIODECURRENTSLOPE[A/µs] V ,FORWARDVOLTAGE[V] F F Figure 23.Typicaldiodepeakrateoffallofreverse Figure 24.Typicaldiodeforwardcurrentasafunction recoverycurrentasafunctionofdiode offorwardvoltage currentslope (V =400V) R 13 Rev.1.2,2013-12-18

WARDVOLTAGE[V] V,FORF Tvj,JUNCTIONTEMPERATURE[°C] Figure 25.Typicaldiodeforwardvoltageasafunction ofjunctiontemperature IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 2.0 IF=10A IF=20A IF=40A 1.8 1.6 1.4 1.2 1.0 0.8 25 50 75 100 125 150 175 14 Rev.1.2,2013-12-18

IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 15 Rev.1.2,2013-12-18

IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 16 Rev.1.2,2013-12-18

IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 17 Rev.1.2,2013-12-18

RevisionHistory IKW40N65F5, IKP40N65F5 Revision:2013-12-18,Rev.1.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet 1.2 2013-12-18 New Marking Pattern WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 18 Rev.1.2,2013-12-18

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: IKW40N65F5 IKP40N65F5 IKP40N65F5XKSA1 IKW40N65F5FKSA1 IKW40N65F5AXKSA1