Diode RapidSwitchingEmitterControlledDiode IDW15E65D2 EmitterControlledDiode Datasheet IndustrialPowerControl

RapidSwitchingEmitterControlledDiode  Features: •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge •Lowforwardvoltageandstableovertemperature •175°Cjunctionoperatingtemperature •Easyparalleling •Pb-freeleadplating;RoHScompliant Applications: •BoostdiodeinCCMPFC Packagepindefinition: •Pin1-notconnected •Pin2-cathode •Pin3-anode IDW15E65D2 EmitterControlledDiode A C 1 2 3 KeyPerformanceandPackageParameters Type V I V,T =25°C T Marking Package rrm f f vj vjmax IDW15E65D2 650V 15A 1.6V 175°C E15ED2 PG-TO247-3 2 Rev.2.2,2014-08-26

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 IDW15E65D2 EmitterControlledDiode 3 Rev.2.2,2014-08-26

MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V DTTCCio==de2150fo°0Cr°wCardcurrent,limitedbyTvjmax IF 3105..00 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A DTCio=de2 5s°uCrg,etp n=o8n. 3rempse,tistiivnee fhoarwlfwaradv ecurrent IFSM 100.0 A PowerdissipationTC=25°C Ptot 85.7 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Swoalvdee rsinogld eterimngp e 1ra.6tu mrem, (0.063 in.) from case for 10s 260 °C MMoauxinmtiunmg toofr qmuoeu, nMti3n gs cprreowcesses: 3 M 0.6 Nm ThermalResistance Parameter SymbolConditions Max.Value Unit Characteristic Djuinocdteio tnh e- rcmasael resistance,1) Rth(j-c) 1.75 K/W Tjuhnecrtmioanl -r easmisbtiaenncte Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value Parameter SymbolConditions Unit min. typ. max. StaticCharacteristic Diode forward voltage VF ITTFvvjj===121557.0°5CA°C -- 11..6605 2.-20 V Reverse leakage current IR VTTvvRjj===216575°50C°VC -- -- 44000.00.0 µA ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value Parameter SymbolConditions Unit min. typ. max. DynamicCharacteristic Internal emitter inductance IDW15E65D2 mcaesaesured 5mm (0.197 in.) from LE - 13.0 - nH 1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. EmitterControlledDiode 4 Rev.2.2,2014-08-26

SwitchingCharacteristic,InductiveLoad Value Parameter SymbolConditions Unit min. typ. max. DiodeCharacteristic,atTvj=25°C DDDDreiiiicoooooddddveeeee rrppreeyeevvaaceekkurr ssrrrreeeae vtnrreeeet roccdsoofue vvfr aeeirnelrrlg yyco otftcb ivmhreeaervryeg cresuerrenttQIdrrrrimrrrr/dt TVIdLCsFwisvRsFj=/i===dt=c1t2h4353=5 05.2I0°P0n1pCAVH0WF,,0,,,600AR/µ0s4,5CP ---- -0163.2520.0080 ---- Aµn/ACµss DDDDreiiiicoooooddddveeeee rrppreeyeevvaaceekkurr ssrrrreeeae vtnrreeeet roccdsoofue vvfr aeeirnelrrlg yyco otftcb ivmhreeaervryeg cresuerrenttQIdrrrrimrrrr/dt TVIdLCsFwisvRsFj=/i===dt=c1t2h4353=5 05.2I0°P0n2pCAVH0WF,,0,,,6A0/µRs0,45CP ---- -0134.51.73020 ---- Aµn/ACµss SwitchingCharacteristic,InductiveLoad Value Parameter SymbolConditions Unit min. typ. max. DiodeCharacteristic,atTvj=175°C/125°C DDDDreiiiicoooooddddveeeee rrppreeyeevvaaceekkurr ssrrrreeeae vtnrreeeet roccdsoofue vvfr aeeirnelrrlg yyco otftcb ivmhreeaervryeg cresuerrenttQIdrrrrimrrrr/dt TVIdLCsFwisvRsFj=/i===dt=c1t1h4353=7 05.2I05P0n1pA°VH0WFC,0,,,6,00AR/µ0s4,5CP ---- -0163.6830.0790 ---- Aµn/ACµss DDDDreiiiicoooooddddveeeee rrppreeyeevvaaceekkurr ssrrrreeeae vtnrreeeet roccdsoofue vvfr aeeirnelrrlg yyco otftcb ivmhreeaervryeg cresuerrenttQIdrrrrimrrrr/dt TVIdLCsFwisvRsFj=/i===dt=c1t1h4353=2 05.2I05P0n2pA°VH0WFC,0,,,6,A0/µRs0,45CP ---- -0155.92.10010 ---- Aµn/ACµss IDW15E65D2 EmitterControlledDiode 5 Rev.2.2,2014-08-26

W] WERDISSIPATION[ P,POtot TC,CASETEMPERATURE[°C] Figure 1.Powerdissipationasafunctionofcase temperature (Tvj£175°C) IDW15E65D2 EmitterControlledDiode 90 80 W] 1 K/ E[ 70 C N A T S D=0.5 60 SI E 0.2 R 50 L 0.1 A M 0.05 R E 0.02 40 H 0.1 T 0.01 T N single pulse 30 E SI N A 20 R T 10 -,h(jc) Zt i: 1 2 3 4 5 6 rtii[[Ks]/:W]: 01..044E4-52 02..444E1-487 01..681E9-358 07..585E1-385 00..0172690029493 32..10E85-3894 0 0.01 25 50 75 100 125 150 175 1E-6 1E-5 1E-4 0.001 0.01 0.1 t ,PULSEWIDTH[s] p Figure 2.Diodetransientthermalimpedanceasa functionofpulsewidth (D=t /T) p 80 0.5 Tj=25°C, IF = 15A Tj=25°C, IF = 15A Tj=175°C, IF = 15A Tj=175°C, IF = 15A 70 C] ns] 60 E[µ 0.4 E[ G M R A TI H Y 50 C R Y 0.3 E R V E O V C 40 O E C R E E R 0.2 S 30 E R S E R V E E V R 20 E t,rr Q,Rrr 0.1 10 0 0.0 0 1000 2000 3000 4000 5000 6000 0 1000 2000 3000 4000 5000 6000 di /dt,DIODECURRENTSLOPE[A/µs] di /dt,DIODECURRENTSLOPE[A/µs] F F Figure 3.Typicalreverserecoverytimeasafunctionof Figure 4.Typicalreverserecoverychargeasafunction diodecurrentslope ofdiodecurrentslope (V =400V) (V =400V) R R 6 Rev.2.2,2014-08-26

I,REVERSERECOVERYCURRENT[A]rrm diF/dt,DIODECURRENTSLOPE[A/µs] Figure 5.Typicalpeakreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) IDW15E65D2 EmitterControlledDiode 40 0 Tj=25°C, IF = 15A Tj=25°C, IF = 15A Tj=175°C, IF = 15A Tj=175°C, IF = 15A 35 -2000 s] µ 30 A/ ofI[rr-4000 25 all off-6000 e 20 at kr a-8000 e p 15 e d o di-10000 10 dt, dI/rr -12000 5 0 -14000 0 1000 2000 3000 4000 5000 6000 0 1000 2000 3000 4000 5000 6000 di /dt,DIODECURRENTSLOPE[A/µs] F Figure 6.Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (V =400V) R 45 2.50 Tj=25°C IF=7,5A Tj=175°C IF=15A 40 2.25 IF=30A 35 2.00 A] V] T[ 30 E[ N G E A 1.75 R T R L U 25 O C V D D 1.50 AR 20 AR W W R R 1.25 FO 15 FO I,F V,F 1.00 10 0.75 5 0 0.50 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 175 V ,FORWARDVOLTAGE[V] T ,JUNCTIONTEMPERATURE[°C] F vj Figure 7.Typicaldiodeforwardcurrentasafunctionof Figure 8.Typicaldiodeforwardvoltageasafunctionof forwardvoltage junctiontemperature 7 Rev.2.2,2014-08-26

IDW15E65D2 EmitterControlledDiode 8 Rev.2.2,2014-08-26

IDW15E65D2 EmitterControlledDiode 9 Rev.2.2,2014-08-26

Revision History IDW15E65D2 Revision: 2014-08-26, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2013-03-13 Preliminary data sheet 2.1 2013-12-16 Final DS / New Marking Pattern 2.2 2014-08-26 VFmax limit reduced according BE test and Qrr at 25°C corrected We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IDW15E65D2 Emitter Controlled Diode 10 Rev. 2.2, 2014-08-26