IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V 600 V DC • Switching behavior benchmark Q 16 nC • No reverse recovery / No forward recovery C • Temperature independent switching behavior I ; T < 130 °C 10 A F C • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit Q /I C F thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 IDH10SG60C PG-TO220-2 D10G60C C A Maximum ratings Parameter Symbol Conditions Value Unit Continuous forward current I T <130 °C 10 A F C I T =25 °C, t =10 ms 51 Surge non-repetitive forward current, F,SM C p sine halfwave T =150 °C, t =10 ms 44 C p Non-repetitive peak forward current I T =25 °C, t =10 µs 410 F,max C p ∫i2dt TC=25 °C, tp=10 ms 13 A2s i²t value T =150 °C, t =10 ms 10 C p Repetitive peak reverse voltage V T =25 °C 600 V RRM j Diode dv/dt ruggedness dv/dt V = 0….480 V 50 V/ns R Power dissipation P T =25 °C 120 W tot C Operating and storage temperature T , T -55 ... 175 °C j stg Soldering temperature, 1.6mm (0.063 in.) T 260 wavesoldering only allowed at leads sold from case for 10s Mounting torque M3 and M3.5 screws 60 Ncm Rev. 2.4 page 1 2012-12-12

IDH10SG60C Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.25 K/W thJC Thermal resistance, Thermal resistance, R junction- ambient, - - 62 junction - ambient thJA leaded Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics DC blocking voltage V I =0.05 mA, T =25 °C 600 - - V DC R j Diode forward voltage V I =10 A, T =25 °C - 1.8 2.1 F F j I =10 A, T =150 °C - 2.2 - F j Reverse current I V =600 V, T =25 °C - 0.8 90 µA R R j V =600 V, T =150 °C - 3.3 860 R j AC characteristics V =400 V,I ≤I , Total capacitive charge Q R F F,max - 16 - nC c di /dt=200 A/µs, F Switching time3) tc Tj=150 °C - - <10 ns Total capacitance C V =1 V, f=1 MHz - 290 - pF R V =300 V, f=1 MHz - 40 - R V =600 V, f=1 MHz - 40 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA. 3) t is the time constant for the capacitive displacement current waveform (independent from T, I and c j LOAD di/dt), different from t which is dependent on T, I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection. 4) Under worst case Z conditions. th 5) Only capacitive charge occuring, guaranteed by design. Rev. 2.4 page 2 2012-12-12

IDH10SG60C 1 Power dissipation 2 Diode forward current P =f(T ); parameter: R I =f(T )4); T ≤175 °C; parameter: D = t /T tot C thJC(max) F C j p 120 80 70 0.1 100 60 80 50 ] P [Wtot 60 I [A] F 40 0.3 30 0.5 40 0.7 20 1 20 10 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC [°C] TC [°C] 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current mode I =f(V ); t =400 µs; parameter:T I =f(V ); t =400 µs; parameter: T F F p j F F p j 20 80 -55 °C 25 °C 100 °C 15 60 150 °C -55 °C A] 10 A] 40 [F [F I 175 °C I 25 °C 100 °C 5 20 150 °C 175 °C 0 0 0 1 2 3 4 0 2 4 6 8 V [V] V [V] F F Rev. 2.4 page 3 2012-12-12

IDH10SG60C 5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage Q =f(di /dt)5); I ≤I I =f(V ); parameter: T C F F F,max R R j 20 101 100 15 10-1 C] A] Q[nc 10 [µR 175 °C I 10-2 150 °C 100 °C 5 25 °C 10-3 -55 °C 0 10-4 100 400 700 1000 100 200 300 400 500 600 di /dt [A/µs] V [V] F R 7 Typ. transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z =f(t ); parameter: D = t /T C=f(V ); T =25 °C, f=1 MHz thJC p P R C 101 350 300 250 100 W] 0.5 200 K/ F] [ p JC 0.2 C [ h 150 Zt 0.1 10-1 100 0.05 0.02 50 0.01 0 10-2 0 10-6 10-5 10-4 10-3 10-2 10-1 10-1 100 101 102 103 t [s] V [V] p R Rev. 2.4 page 4 2012-12-12

IDH10SG60C 9 Typ. C stored energy E =f(V ) C R 10 8 6 J] µ [c E 4 2 0 0 200 400 600 V [V] R Rev. 2.4 page 5 2012-12-12

IDH10SG60C PG-TO220-2: Outline Dimensions in mm/inches Rev. 2.4 page 6 2012-12-12

IDH10SG60C Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support , automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support systems are intended to be implanted in the human body and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 7 2012-12-12

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