HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description Features These beam lead diodes are constructed using a metal- • Platinum tri-metal system semiconductor Schottky barrier junction. Advanced High temperature stability epitaxial techniques and precise process control insure • Silicon nitride passivation uniformity and repeatability of this planar passivated Stable, reliable performance microwave semiconductor. A nitride passivation layer • Low noise figure provides immunity from contaminants which could Guaranteed 7.5 dB at 26 GHz otherwise lead to I drift. R • High uniformity The Avago beam lead process allows for large beam Tightly controlled process insures uniform RF anchor pads for rugged construction (typical 6 gram characteristics pull strength) without degrading capacitance. • Rugged construction 4 grams minimum lead pull Applications • Low capacitance The beam lead diode is ideally suited for use in stripline 0.10 pF max. at 0 V or microstrip circuits. Its small physical size and • Polyimide scratch protection uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. The basic medium barrier devices in this family are DC Outline 07 tested HSCH-5310 and -5312. Equivalent low barrier devices are HSCH-5330 and -5332. Batch matched CATHODE versions are available as HSCH-5331. GOLD LEADS 130 (5) The HSCH-5340 is selected for applications requiring 100 (4) 135 (5) 90 (3) guaranteed RF-tested performance up to 26 GHz. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 135 (5) 16 GHz. 90 (3) 225 (9) 310 (12) 225 (9) Assembly Techniques 200 (8) 250 (10) 170 (7) Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information, see Application Note 979, The Handling 8 Min. (.3) and Bonding of Beam Lead Devices Made Easy, or 30 MIN (1) Application Note 993, Beam Lead Device Bonding to Soft Substances. SILICON GLASS 710 (28) 60 (2) 670 (26) 40 (1) DIMENSIONS IN µm (1/1000 inch)

Maximum Ratings Pulse Power Incident at T = 25°C ........................................................1 W A Pulse Width = 1 ms, Du = 0.001 CW Power Dissipation at T = 25°C ...............................................150 mW A Measured in an infinite heat sink derated linearly to zero at maximum rated temperature T – Operating Temperature Range .............................-65°C to +175 °C OPR T – Storage Temperature Range...................................-65°C to +200°C STG Minimum Lead Strength ......................................4 grams pull on any lead Diode Mounting Temperature ..............................+350°C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. Table IA. Electrical Specifications for RF Tested Diodes at T = 25°C A I Min. Max. Max. F Max. Impedance Break- Dynamic Total Max. Max. Part Noise Z (ΩΩΩΩΩ) down Resis- Capaci- Forward Leakage IF Number Figure Max. Voltage tance tance Voltage Current HSCH- Barrier NF (dB) Min. Max. SWR V (V) R (ΩΩΩΩΩ) C (pF) V (mV) I (nA) BR D T F R 5314 Medium 7.2 at 200 400 1.5:1 4 16 0.15 500 100 16 GHz 5340 Low 7.5 at 150 350 20 0.10 375 400 26 GHz Test DC Load Resistance - 0 Ω I ≤ 10 µA I = 5 mA V = 0 V I = 1 mA V = 1 V R F R F R Conditions LO Power = 1 mW f = 1 MHz I = 30 MHz, 1.5 dB NF F *Minimum batch size 20 units. Note: 1. C = C + 0.02 pF (fringing cap). T J 2

Table IB. Electrical Specifications for DC Tested Diodes at T = 25°C A Minimum Maximum Maximum Maximum Maximum Part Batch* Breakdown Dynamic Total Forward Leakage Number Matched Voltage Resistance Capacitance Voltage Current HSCH- HSCH- Barrier V (V) R (ΩΩΩΩΩ) C (pF) V (mV) I (nA) BR D T F R 5312 Medium 4 16 0.15 500 100 5310 20 0.10 5332 Low 4 16 0.15 375 400 5330 5331 20 0.10 Test ∆V ≤ 15 mV I ≤ 10 µA I = 5 mA V = 0 V I = 1 mA V = 1 V F R F R F R Conditions @ 5 mA f = 1 MHz *Minimum batch size 20 units. Typical Detector Characteristics at T = 25°C A Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS –54 dBm 20 µA Bias, R = 100 kΩ L Video Bandwidth = 2 MHz Voltage Sensitivity γ 6.6 mV/µW f = 10 GHz Video Resistance R 1400 Ω V Low Barrier (Zero Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS –44 dBm Zero Bias, R = 10 MΩ L Video Bandwidth = 2 MHz Voltage Sensitivity γ 10 mV/µW f = 10 GHz Video Resistance R 1.8 MΩ V SPICE Parameters HSCH-5312 HSCH-5330 Parameter Units HSCH-5314 HSCH-5310 HSCH-5340 HSCH-5332 B V 5 5 5 5 V C pF 0.13 0.09 0.09 0.13 JO E eV 0.69 0.69 0.69 0.69 G I A 10E-5 10E-5 10E-5 10E-5 BV I A 3 x 10E-10 3 x 10E-10 4 x 10E-8 4 x 10E-8 S N 1.08 1.08 1.08 1.08 R Ω 9 13 13 9 S P V 0.65 0.65 0.5 0.5 B P 2 2 2 2 T M 0.5 0.5 0.5 0.5 3

Typical Parameters 100 100 7.5 +125°C +125°C +25°C +25°C –55°C –55°C 7.0 URRENT (mA) 110 URRENT (mA) 101 GURE (dB) 6.5 0.15 pF 0.1 pF FORWARD C 0.1 FORWARD C 0.1 NOISE FI 65..05 0.25 pF 0.01 0.01 5.0 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 0 4 8 12 16 20 24 28 2 9.375 26 FORWARD VOLTAGE (V) FORWARD VOLTAGE (V) FREQUENCY (GHz) Figure 1. Typical forward characteristics for Figure 2. Typical forward characteristics for Figure 3. Typical noise figure vs. frequency. medium barrier beam lead diodes. HSCH-5310 low barrier beam lead diodes. HSCH-5330, series. -5340 series. 1.0 1.0 0.5 2.0 0.5 2.0 18 20 µA 3.0 50 µA 3.0 0.2 10 26 GHz 5.0 0.2 20 150 µA 5.0 10.0 10 26 GHz 10.0 2 2 0.2 0.5 1.0 2.0 3.0 5.0 10.0 0.2 0.5 1.0 2.0 3.0 5.0 10.0 10.0 10.0 0.2 0.2 5.0 5.0 3.0 3.0 0.5 0.5 2.0 2.0 1.0 1.0 Figure 4. Typical admittance characteristics with 1 mA self bias. Figure 5. Typical admittance characteristics with external bias. HSCH-5340. HSCH-5340. 4

1.0 201 .µ0A 50 µA 0.5 1 mA 2.0 0.5 2.0 1.5 mA 150 µA 3 mA 3.0 18 GHz 3.0 18 GHz 10 0.2 5.0 0.2 5.0 10 10.0 10.0 2 2 0.2 0.5 1.0 2.0 3.0 5.0 10.0 0.2 0.5 1.0 2.0 3.0 5.0 10.0 10.0 10.0 0.2 0.2 5.0 5.0 3.0 3.0 0.5 0.5 2.0 2.0 1.0 1.0 Figure 6. Typical admittance characteristics with self bias. Figure 7. Typical admittance characteristics with external bias. HSCH-5314. HSCH-5314. Models for Each Beam Lead Schottky Diode HSCH-5340 1 mA Self Bias 0.03 pF 0.1 nH 0.04 nH 11 Ω 267 Ω 0.11 pF Other HSCH-53xx Self Bias 0.02 pF 0.1 nH Rs Rj Cj 1.0 mA Self Bias 1.5 mA Self Bias 3.0 mA Self Bias Part Numbers R (Ω) R (Ω) C (pF) R (Ω) R (Ω) C (pF) R (Ω) R (Ω) C (pF) S j j S j j S j j HSCH-5314 5.0 393 0.11 5.2 232 0.11 5.0 150 0.12 5

HSCH-5340 External Bias 0.03 pF 0.1 nH 0.04 nH Rj 11 Ω Cj 0.11 pF 20 µA DC Bias 50 µA DC Bias 150 µA DC Bias Part Numbers R (Ω) C (pF) R (Ω) C (pF) R (Ω) C (pF) j j j j j j HSCH-5340 1300 0.09 560 0.09 187 0.10 Other HSCH-53xx External Bias 0.02 pF 0.1 nH Rs Rj Cj 20 µADC Bias 50 µADC Bias 150 µADC Bias Part Numbers R (Ω) R (Ω) C (pF) R (Ω) R (Ω) C (pF) R (Ω) R (Ω) C (pF) S j j S j j S j j HSCH-5314 2.8 1300 0.11 4.7 520 0.12 2.7 180 0.13 For product information and a complete list of distributors, please go to our website: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes AV01-0127EN AV01-0484EN September 21, 2006