HOA1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range ( 55¡C to +100¡C) • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The HOA1180 series consists of an infrared emitting Tolerance 3 plc decimals ±0.010(0.25) diode and an NPN silicon phototransistor 2 plc decimals ±0.020(0.51) (HOA1180 001, 002) or photodarlington (HOA1180 003), encased side by side on converging optical axes in a black thermoplastic housing. The .250(6.35) detector responds to radiation from the IRED only when .070(1.78) a reflective object passes within its field of view. The .625(15.88) HOA1180 series employs metal can packaged .450(11.43) .50(12.7) cSoEm1p4o5n0e, nStDs.1 F4o4r0 ,a adndditi oSnDa1l 4c1o0m.ponent information see 1M2I.N0(304.8) TSEU SRTF ACE .250(6.35 Housing material is polyester. Housings are soluble in chlorinated hydrocarbons and ketones. Recommended .062(1.60)R .150(3.81) 2 PLCS cleaning agents are methanol and isopropanol. .040(1.02) .187(4.75) Wire color code and functions are: All devices IRED anode - Red IRED cathode - Black HOA1180-001 Collector - Brown Emitter - Black HOA1180-002 Collector - Orange DIM_035.ds4 Emitter - Black HOA1180-003 Collector - Yellow Emitter - Black h Honeywell reserves the right to make 236 changes in order to improve design and supply the best products possible.

HOA1180 Reflective Sensor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS IR EMITTER DETECTOR COUPLED CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Operating Temperature Range -55¡C to 100¡C Storage Temperature Range -55¡C to 125¡C Soldering Temperature (5 sec) 240¡C IR EMITTER Power Dissipation 75 mW [À] Reverse Voltage 3 V Continuous Forward Current 50 mA DETECTOR TRANS. DARLINGTON Collector-Emitter Voltage 30 V 15 V Emitter-Collector Voltage 5 V 5 V Power Dissipation 75 mW [À] 75 mW [À] Collector DC Current 30 mA 30 mA Honeywell reserves the right to make h changes in order to improve design and 237 supply the best products possible.

HOA1180 Reflective Sensor Fig. 1 IRED Forward Bias Characteristics Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_079.ds4 100 1000 90 Am 80 Pulsed sµ rrt - uen 567000 cToAn =d i8ti0o°nC i t - eem 100 Photodarlington r cadw 3400 TA = 25°C ssepon 10 ro 20 T = -40°C R F A Phototransistor 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000 Forward voltage - V Load resistance - Ohms Fig. 3 Dark Current vs Fig. 4 Collector Current vs Temperature gra_303.cdr Ambient Temperature gra_076.ds4 t n 1.2 e rru 1.0 c r o 0.8 tc e llo 0.6 c ed 0.4 z liam 0.2 ro N 0.0 -50 -25 0 25 50 75 100 Free-air temperature - °C Fig. 5 Collector Current vs Fig. 6 Collector Current vs Distance to Reflective Surface gra_084.ds4 IRED Forward Current gra_085.ds4 t n 1.0 t n 1.80 crrue 00..89 crrue 11..4600 lltr coeo 000...567 llt rcoeo 11..2000 li zcaedm 000...234 IVF C=E =30 5 m.0A V li zcaedm 000...468000 Vd C=E 0=. 55 iVn. roN 00..01 roN 00..0200 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0 10 20 30 40 50 Distance to reflective surface - inches IRED forward current - mA • All Performance Curves Show Typical Values h Honeywell reserves the right to make 238 changes in order to improve design and supply the best products possible.

HOA1180 Reflective Sensor Honeywell reserves the right to make h changes in order to improve design and 239 supply the best products possible.