ICGOO在线商城 > 射频/IF 和 RFID > RF 混频器 > HMC951LP4E
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HMC951LP4E产品简介:
ICGOO电子元器件商城为您提供HMC951LP4E由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC951LP4E价格参考。HittiteHMC951LP4E封装/规格:RF 混频器, RF Mixer IC General Purpose Down Converter 5.6GHz ~ 8.6GHz 24-SMT (4x4)。您可以下载HMC951LP4E参考资料、Datasheet数据手册功能说明书,资料中有HMC951LP4E 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | IC MMIC IQ DOWNCONVERTER 24-QFN |
产品分类 | |
品牌 | Hittite Microwave Corporation |
数据手册 | |
产品图片 | |
产品型号 | HMC951LP4E |
RF类型 | 通用 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
供应商器件封装 | 24-QFN(4x4) |
其它名称 | 1127-1625 |
包装 | 剪切带 (CT) |
噪声系数 | 2dB |
增益 | 13dB |
封装/外壳 | 24-VFQFN 裸露焊盘 |
标准包装 | 100 |
混频器数 | 1 |
电压-电源 | 5V |
电流-电源 | 55mA |
辅助属性 | 降频变频器 |
频率 | 5.6GHz ~ 8.6GHz |
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Typical Applications Features The HMC951LP4E is ideal for: Conversion Gain: 13 dB 9 • Point-to-Point and Point-to-Multi-Point Radio Image Rejection: 20 dB • Military Radar, EW & ELINT LO to RF Isolation: 48 dB • Satellite Communications Noise Figure: 2.3 dB T Input IP3: 3 dBm E m 24 Lead 4x4 mm SMT Package: 16 mm² s Functional Diagram General Description - T The HMC951LP4E is a compact GaAs MMIC I/Q s downconverter in a leadless RoHS compliant r SMT package. This device provides a small signal e E v conversion gain of 13 dB with a noise figure of 2 dB i and 25 dB of image rejection across the frequency e band. The HMC951LP4E utilizes an LNA followed by c e an imLage reject mixer which is driven by an LO buffer r amplifier. The image reject mixer eliminates the need for a filter following the LNA, and removes thermal & O noise at the image frequency. I and Q mixer outputs s are provided and an external 90° hybrid is needed to m select the required sideband. The HMC951LP4E is a r much smaller alternative to hybrid style image reject i S mixer downconverter assemblies, and is compatible , s with surface mount manufacturing techniques. r Electrical Specifications, T = +25 °C, IF = 1000 MHz, LO = 0 dBm, Vdd = 5 V LSB [1] e A B x Parameter Min. Typ. Max. Units i m Frequency Range, RF 5.6 - 8.6 GHz Frequency Range, LO 3 - 12.1 GHz q Frequency Range, IF O DC - 3.5 GHz / i Conversion Gain (As IRM) 10 13 dB - Noise Figure 2 dB s Image Rejection 13 25 dBc r 1 dB Compression (Input) -3 dBm e LO to RF Isolation 40 48 dB x i LO to IF Isolation 20 30 dB m IP3 (Input) 3 dBm Amplitude Balance [2] 1 dB Phase Balance [2] -7 deg Total Supply Current @LO = 0dBm [3] Idd 55 60 mA Idd1 78 85 Idd2 97 105 [1] Data taken as IRM with external IF 90° Hybrid. [2] Data taken without external 90° hybrid, IF = 1000 MHz. [3] Current is set by the external bias resistor. Idq of LO Amp = 140 mA. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Data Taken As IRM With External IF 90° Hybrid, IF = 1000 MHz Conversion Gain LSB vs. Temperature Conversion Gain LSB vs. LO Drive 9 18 18 17 17 B) 16 B) 16 d d N GAIN ( 1145 N GAIN ( 1145 E mT O 13 O 13 SI SI s R 12 R 12 E E ONV 11 ONV 11 T - C 10 C 10 s 9 9 r 8 8 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5.6 6.1 6.6 7.1 7.6 8.1 8.6 e E RF FREQUENCY (GHz) RF FREQUENCY (GHz) v +25C +85C -40C -4 dBm +2 dBm ei -2 dBm +4 dBm 0 dBm c L e r Image Rejection LSB vs. Temperature RF Return Loss vs. Temperature & 45 0 O 40 s GE REJECTION (dBc) 1223350505 S ETURN LOSS (dB)-1--842 s, irm IMA 10 R-16 r 5 B e 0 -20 x 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5 5.5 6 6.5 7 7.5 8 8.5 9 i m RF FREQUENCY (GHz) RF FREQUENCY (GHz) +25C +85C -40C +25C +85C -40C q O / i - LO Return Loss vs. Temperature IF Return Loss [1] s r 0 0 e x -4 -5 OSS (dB) -8 OSS (dB)-10 mi N L N L UR-12 UR-15 RET RET -16 -20 -20 -25 5 5.5 6 6.5 7 7.5 8 8.5 9 0 0.5 1 1.5 2 2.5 3 3.5 4 RF FREQUENCY (GHz) RF FREQUENCY (GHz) +25C +85C -40C IF1 IF2 [1] Data taken without external 90° hybrid. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 9 - 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Data Taken as IRM With External IF 90° Hybrid, IF = 1000 MHz Isolations Input P1dB LSB vs. Temperature 9 0 0 -2 -10 -4 T dB)-20 m) -6 E m N ( dB s ATIO-30 1dB ( -8 SOL-40 P-10 - I -12 T s -50 -14 r -60 -16 e 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5.6 6.1 6.6 7.1 7.6 8.1 8.6 E v RF FREQUENCY (GHz) RF FREQUENCY (GHz) ei LROF//RIFF1 LROF//IIFF21 LO/IF2 +25 C +85 C -40 C c e L r Input IP3, LSB vs. Temperature Input IP3, LSB vs. LO Drive & 10 10 O s 9 9 8 8 m 7 7 6 r m) 5 m) 6 B B i 3 (d 4 S 3 (d 5 s, IP 3 IP 4 2 3 r 1 2 0 e -1 B 1 x -2 0 i 5.5 6 6.5 7 7.5 8 8.5 9 5.5 6 6.5 7 7.5 8 8.5 9 m RF FREQUENCY (GHz) RF FREQUENCY (GHz) q +25C O +85C -40C - 02 ddBBmm ++24 ddBBmm / i - Noise Figure vs. Temperature, s IF Frequency = 1000 MHz r 6 e x 5 mi B) d 4 E ( R GU 3 FI E OIS 2 N 1 0 5.6 6.1 6.6 7.1 7.6 8.1 8.6 RF FREQUENCY (GHz) +25C +85C -40C InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Quadrature Channel Data Taken Without IF 90° Hybrid, IF = 1000 MHz IF Bandwidth Amplitude Balance vs. LO Drive [1] 9 20 2 1.5 RESPONSE (dB)-11000 AMPLITUDE BALANCE (dB)-00-..01155 T E s - smT -20 -1.5 r -2 0.5 1 1.5 2 2.5 3 3.5 4 5.6 6.1 6.6 7.1 7.6 8.1 8.6 e E IF FREQUENCY (GHz) RF FREQUENCY (GHz) v CONVERSION GAIN LO = -4 dBm LO = 0 dBm ei RETURN LOSS LO = -2 dBm LO = +2 dBm c L e r Phase Balance vs. LO Drive [1] & 5 O s 0 g) m e d CE ( -5 r AN S i L E BA-10 s, S HA r P-15 e B x -20 16 17 18 19 20 21 22 23 24 25 i m RF FREQUENCY (GHz) LO = +2 dBm LO = +6 dBm q O LO = +4 dBm LO = +8 dBm / i - s r e x i m [1] Data taken with IF = 1000 MHz InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 9 - 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Data Taken as IRM With External IF 90° Hybrid, IF = 1000 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive 9 18 18 17 17 B) 16 B) 16 d d mT N GAIN ( 1145 N GAIN ( 1145 E O 13 O 13 s SI SI R 12 R 12 E E - ONV 11 ONV 11 T C 10 C 10 s 9 9 r 8 8 e 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5.6 6.1 6.6 7.1 7.6 8.1 8.6 E v RF FREQUENCY (GHz) RF FREQUENCY (GHz) ei +25C +85C -40C -4 dBm +2 dBm -2 dBm +4 dBm c 0 dBm e L r Image Rejection USB vs. Temperature Input P1dB, USB vs. Temperature & 45 0 O s 40 -2 m dBc) 35 -4 r ON ( 30 m) -6 s, i GE REJECTI 122505 S P1dB (dB-1-80 r MA 10 -12 I e 5 B -14 x 0 -16 i 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5.6 6.1 6.6 7.1 7.6 8.1 8.6 m RF FREQUENCY (GHz) RF FREQUENCY (GHz) q +25C +85C -40C +25 C +85 C -40 C O / i - s Input IP3, USB vs. Temperature Input IP3, USB vs. LO Drive r 8 9 e 7 8 x 6 7 i 5 6 m m) 4 m) 5 IP3 (dB 23 IP3 (dB 34 1 2 0 1 -1 0 -2 -1 5.5 6 6.5 7 7.5 8 8.5 9 5.5 6 6.5 7 7.5 8 8.5 9 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -40C -2 dBm +2 dBm 0 dBm +4 dBm InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Data Taken as IRM With External IF 90° Hybrid, IF = 2000 MHz Conversion Gain, LSB vs. Temperature Conversion Gain, LSB vs. LO Drive 9 18 18 17 17 B) 16 B) 16 N GAIN (d 1145 N GAIN (d 1145 E mT O 13 O 13 RSI 12 RSI 12 s E E ONV 11 ONV 11 T - C 10 C 10 s 9 9 r 8 8 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5.6 6.1 6.6 7.1 7.6 8.1 8.6 e E RF FREQUENCY (GHz) RF FREQUENCY (GHz) v +25C +85C -40C -4 dBm +2 dBm ei -2 dBm +4 dBm 0 dBm c L e r Image Rejection LSB vs. Temperature Input P1dB, LSB vs. Temperature & 45 0 O 40 -2 s Bc) 35 -4 m d ON ( 30 m) -6 r GE REJECTI 122505 S P1dB (dB-1-80 s, i MA 10 -12 r I 5 B -14 e 0 -16 x 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5.6 6.1 6.6 7.1 7.6 8.1 8.6 i m RF FREQUENCY (GHz) RF FREQUENCY (GHz) +25C O +85C -40C +25 C +85 C -40 C q / i - Input IP3, LSB vs. Temperature Input IP3, LSB vs. LO Drive s r 9 10 e 8 9 7 8 x 6 7 i m m) 5 m) 6 B B 3 (d 4 3 (d 5 IP 3 IP 4 2 3 1 2 0 1 -1 0 5.5 6 6.5 7 7.5 8 8.5 9 5.5 6 6.5 7 7.5 8 8.5 9 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -40C -2 dBm +2 dBm 0 dBm +4 dBm InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 9 - 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Data Taken as IRM With External IF 90° Hybrid, IF = 2000 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive 9 18 18 17 17 B) 16 B) 16 mT GAIN (d 1145 GAIN (d 1145 E N N O 13 O 13 s SI SI ER 12 ER 12 - ONV 11 ONV 11 T s C 10 C 10 r 9 9 8 8 e 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5.6 6.1 E6.6 7.1 7.6 8.1 8.6 v RF FREQUENCY (GHz) RF FREQUENCY (GHz) i e +25C +85C -40C -4 dBm +2 dBm -2 dBm +4 dBm c 0 dBm e L r Image Rejection USB vs. Temperature Input P1dB, USB vs. Temperature & 45 O 0 s 40 -2 m dBc) 35 -4 r ON ( 30 m) -6 s, i GE REJECTI 122505 S P1dB (dB-1-80 r MA 10 -12 I e 5 B -14 x 0 -16 i 5.6 6.1 6.6 7.1 7.6 8.1 8.6 5.6 6.1 6.6 7.1 7.6 8.1 8.6 m RF FREQUENCY (GHz) RF FREQUENCY (GHz) q +25C +85C -40C +25 C +85 C -40 C O / i - s Input IP3, USB vs. Temperature Input IP3, USB vs. LO Drive r 7 7 e 6 6 x 5 5 i 4 4 m m) 3 m) 3 B B 3 (d 2 3 (d 2 IP 1 IP 1 0 0 -1 -1 -2 -2 -3 -3 5.5 6 6.5 7 7.5 8 8.5 9 5.5 6 6.5 7 7.5 8 8.5 9 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -40C -2 dBm +2 dBm 0 dBm +4 dBm InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 7 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz MxN Spurious Outputs Absolute Maximum Ratings 9 nLO RF +15 dBm mRF 0 1 2 3 4 LO Drive +20 dBm 0 x 34 59 67 56 Vdd +5.5V 1 23 0 52 71 80 Channel Temperature 150 °CE T 2 64 50 56 91 95 Continuous Pdiss (T=85°C) m 1.4 W (derate 21.6 mW/°C above 85°C) 3 92 93 53 45 90 s Thermal Resistance (R ) 4 90 115 102 67 64 TH 46.3 °C/W (channel to package bottom) T - RF = 6.1 GHz @ -20 dBm Storage Temperature -65 to +150 °C s LO = 7.1 GHz @ 0 dBm r Operating Temperature -55 to +85 °C Data taken without IF hybrid e All values in dBc below IF power level (LO - RF = 1 GHz) ESD Sensitivity (HEBM) Class 1A v i e ELECTROSTATIC SENSITIVE DEVICE c LOBSERVE HANDLING PRECAUTIONS e r Outline Drawing & O s m r S i , s r e B x i m q O / i - s r NOTES: e 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] x 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. i m 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [1] HMC951LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H951 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 9 - 8 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Pin Descriptions 9 Pin Number Function Description Interface Schematic 1, 4, 6, 7, 8, 9, These pins and package bottom must 11, 12, 13, 19, GND be connected to RF/DC ground 21, 22, 24 T E m s Power supply voltage for RF Amplifier. Bypass 2 VDD capacitors are required. See application circuit - T s r e v This pin is used to set the DC current of the E 3 VBIAS_RF RF amplifier by selection of the external bias i e resistor. See application circuit. c e L This pin is the RF input pin. It is AC r 5 RFIN coupled and matched to 50 Ohms & O s 10 LOIN This pin is the LO input pin. It is AC coupled and matched to 50 Ohms m r i S , s Power supply voltages for LO Amplifier. Bypass 14, 16 VDD1, VDD2 capacitors are required. See application circuit r e B x i m This pin is used to set the DC current of the 15 VBIAS_LO LO amplifier by selection of the external bias q O resistor. See application circuit. / i - These pins are not connected internally; however, all data s 17, 18 N/C shown herein was measured with these pins connected to RF/DC ground externally. r e This pin is DC coupled. For applications not requiring 20 IF2 x operations to DC this port should be DC blocked externally i using a series capacitor whose value has been chosen to m pass the necessary frequency range. For operation to DC, this pin must not sink / source more than 3 mA of current or 23 IF1 part non-function and possible failure will result. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 9 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Typical Application Circuit 9 100 pF Vdd HMC951LP4E 90 O HYBRID E T RF IN IF OUT m 5.6 - 8.6 GHz IF1 s +5 Volts (Iq3 9=0 5 o5h mmAs) Vbias RF T - + IF2 s 4.7 µF 1000 pF 100 pF r +5 Volts Vdd2 e E + v 4.7 µF 1000 pF 100 pF i e +5 Volts Vdd1 c + L e 4.7 µF 1000 pF 100 pF r Vbias LO & O 100 pF s 1000 ohms LO IN (Iq ≈ 140 mA) m Notes: 3.0 - 12.1 GHz r 4.7 µF capacitors can be shared. 1000 pF Evaluation Board is generic and handles multiple parts. S i + Not all components or bias lines are used on the evaluation board. 4.7 µF s, +5 Volts r e B x i m q O / i - s r e x i m InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 9 - 10 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz 9 Evaluation PCB T E m s - T s r e E v i e c e L r & O s m r i S , s r List of Materials for Evaluation PCB 131372 [1] e B x Item Description i m J1, J2 PCB Mount SMA RF Connector, SRI J3, J4 PCB Mount SMA Connector, Johnson q O J5, J6 DC Pins / i C1, C4, C6, C8, C10, C13 100 pF Capacitor, 0402 Pkg. - C2, C5, C7, C9, C11, C14 1000 pF Capacitor, 0402 Pkg. s r C3, C12 4.7 µF Capacitor,1206 Pkg. e R1 390 Ohm Resistor, 0402 Pkg. x R3 1 kOhm Resistor, 0402 Pkg. i R4 0 Ohm Resistor, 0402 Pkg. m U1 HMC951LP4E PCB [2] 129744 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 11 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC951LP4E v03.0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Notes: 9 E T m s T - s r e E v i e c L e r & O s m r S i , s r e B x i m q O / i - s r e x i m InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 9 - 12 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D