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数量阶梯 | 香港交货 | 国内含税 |
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参数 | 数值 |
产品目录 | 射频/IF 和 RFID |
描述 | IC AMP MMIC GAAS LN 16QFN |
产品分类 | RF 放大器 |
品牌 | Hittite Microwave Corporation |
数据手册 | 点击此处下载产品Datasheet |
产品图片 | |
P1dB | 16dBm |
产品型号 | HMC902LP3E |
RF类型 | 通用 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
供应商器件封装 | 16-QFN(3x3) |
其它名称 | 1127-1074-6 |
包装 | Digi-Reel® |
噪声系数 | 1.8dB |
增益 | 19.5dB |
封装/外壳 | 16-VFQFN 裸露焊盘 |
标准包装 | 1 |
测试频率 | - |
电压-电源 | 3.5V |
电流-电源 | 110mA |
频率 | 5GHz ~ 10GHz |
HMC902LP3E v01.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 Typical Applications Features This HmC902lp3e is ideal for: low Noise figure: 1.8 dB T • point-to-point radios High Gain: 19 dB m s • point-to-multi-point radios High p1dB output power: 16 dBm • military & space single supply: +3.5 V @ 80 mA - e • Test instrumentation output ip3: +28 dBm s 50 ohm matched input/output i o 16 lead 3x3mm smT package: 9mm² N w Functional Diagram General Description o l The HmC902lp3e is a GaAs mmiC low Noise - Amplifier housed in a leadless 3x3 mm plastic sur- s face mount package. The amplifier operates between r 5 and 10 GHz, providing 19 dB of small signal e gain, 1.8 dB noise figure, and output ip3 of +28 dBm, i f while requiring only 80 mA from a +3.5V supply. The i l p1dB output power of +16 dBm enables the lNA to p function as a lo driver for balanced, i/Q or image m reject mixers. The HmC902lp3e also features A i/os that are DC blocked and internally matched to 50 ohms, making it ideal for high capacity microwave radios and C-Band VsAT applications. Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [2] A parameter min. Typ. max. Units frequency range 5 - 10 GHz Gain [1] 17 19.5 dB Gain Variation over Temperature 0.01 dB / °C Noise figure [1] 1.8 2.2 dB input return loss 12 dB output return loss 15 dB output power for 1 dB Compression [1] 16 dBm saturated output power (psat) [1] 17.5 dBm output Third order intercept (ip3) 28 dBm supply Current (idd) 80 110 mA (Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.) [1] Board loss removed from gain, power and noise figure measurement. [2] Vgg1 = Vgg2 = open for normal, self-biased operation. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC902LP3E v01.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 Broadband Gain & Return Loss [1] Gain vs. Temperature [1] 25 25 T +25C m 15 23 +85C -40C s B) SPONSE (d -55 SSS212112 GAIN (dB) 1291 se - E R i o -15 17 N -25 15 w 3 5 7 9 11 13 4 5 6 7 8 9 10 11 FREQUENCY (GHz) FREQUENCY (GHz) o l - s Input Return Loss vs. Temperature Output Return Loss vs. Temperature r 0 0 e i f -10 -10 dB) dB) li SS (-20 SS (-20 p O O L L m N N UR-30 ++2855CC UR-30 ++2855CC A ET -40C ET -40C R R -40 -40 -50 -50 4 5 6 7 8 9 10 11 4 5 6 7 8 9 10 11 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature [1] Output IP3 vs. Temperature 6 35 5 30 RE (dB) 4 ++-428055CCC m) 25 U B SE FIG 3 IP3 (d 20 ++2855CC OI 2 -40C N 15 1 0 10 4 5 6 7 8 9 10 11 4 5 6 7 8 9 10 11 FREQUENCY (GHz) FREQUENCY (GHz) [1] Board loss removed from gain, power and noise figure measurement. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 7 - 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC902LP3E v01.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 P1dB vs. Temperature [1] Psat vs. Temperature [1] 25 25 T m 20 20 s se - P1dB (dBm) 1105 ++2855CC Psat (dBm) 1105 ++2855CC -40C -40C i o 5 5 N w 0 0 4 5 6 7 8 9 10 11 4 5 6 7 8 9 10 11 o FREQUENCY (GHz) FREQUENCY (GHz) l - s Reverse Isolation vs. Temperature Power Compression @ 7 GHz [1] r 0 24 e fi -10 ++-428055CCC E (%) 20 i A mpl TION (dB)--3200 AIN (dB), P 1126 GPPoAauiEnt A SOLA-40 m), G 8 I dB 4 ut ( -50 Po 0 -60 -4 4 5 6 7 8 9 10 11 -21 -18 -15 -12 -9 -6 -3 0 3 FREQUENCY (GHz) INPUT POWER (dBm) Gain, Noise Figure & Power vs. Gain, Output IP3 & Idd vs. Gate Supply Voltage @ 7 GHz [1] Voltage @ 7 GHz [2][3] 22 7 30 120 20 6 25 Gain 100 IP3 AIN (dB), P1dB (dBm) 11112468 2345 NOISE FIGURE (dB GAIN (dB), IP3 (dBm) 112050 468000 Idd (mA) G ) 10 1 5 Idd 20 8 0 0 0 3 3.5 4 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 Vdd (V) Vgg1, Vgg2 Gate Volltage (Vdc) [1] Board loss removed from gain, power and noise figure measurement. [2] Board loss removed from gain measurement [3] Data taken at Vdd1 = Vdd2 = 3V InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC902LP3E v01.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 Current vs. Input Power @ 7 GHz Absolute Maximum Ratings 88 Drain Bias Voltage +4.5V T rf input power +10 dBm m 86 Gate Bias Voltage, Vgg1 -0.8V to +0.2V s Gate Bias Voltage, Vgg2 -0.8V to +0.2V A) 84 - m Channel Temperature 150 °C d ( e d Continuous pdiss (T = 85 °C) I 82 0.45 w s (derate 7 mw/°C above 85 °C) i Thermal resistance o 80 143.8 °C/w (Channel to ground paddle) N storage Temperature -65 to +150 °C 78 w -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 3 operating Temperature -40 to +85 °C INPUT POWER (dBm) o l eleCTrosTATiC seNsiTiVe DeViCe - oBserVe HANDliNG preCAUTioNs s r Outline Drawing e i f i l p m A NoTes: 1. pACKAGe BoDY mATeriAl: low sTress iNJeCTioN molDeD plAsTiC siliCA AND siliCoN impreGNATeD. 2. leAD AND GroUND pADDle mATeriAl: Copper AlloY. 3. leAD AND GroUND pADDle plATiNG: 100% mATTe TiN 4. DimeNsioNs Are iN iNCHes [millimeTers]. 5. leAD spACiNG TolerANCe is NoN-CUmUlATiVe. 6. pAD BUrr leNGTH sHAll Be 0.15mm mAX. pAD BUrr HeiGHT sHAll Be 0.05mm mAX. 7. pACKAGe wArp sHAll NoT eXCeeD 0.05mm 8. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 9. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD pCB lAND pATTerN. Package Information part Number package Body material lead finish package marking [1] HmC902lp3e roHs-compliant low stress injection molded plastic 100% matte sn [2] 902 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °C InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 7 - 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC902LP3E v01.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 Pin Descriptions pin Number function Description interface schematic T m The pins are not connected internally; however, all data 1, 2, 5, 8, N/C shown herein was measured with these pins connected to rf/ s 11 - 13, 16 DC ground externally. - e 3 rfiN This pin is AC coupled and matched to 50 ohms s i o package bottom has exposed metal ground paddle 4, 9 GND N that must be connected to rf/DC ground. w optional gate control for amplifier. if left open, the amplifier o will run self-biased at standard current. Negative volt- 6, 7 Vgg1, Vgg2 l age applied will reduce drain current. external capacitors required, see application circuits herein. - s r This pin is AC coupled e 10 rfoUT and matched to 50 ohms i f i l p power supply voltage for the amplifier. see assembly 14, 15 Vdd2, Vdd1 for required external components. m A InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC902LP3E v01.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 Evaluation PCB T m s - e s i o N w o l - s r e i f i l p m A List of Material for Evaluation PCB 129787 [1] The circuit board used in this application should item Description use rf circuit design techniques. signal lines J1, J2 smA Connector should have 50 ohm impedance while the pack- J3, J4, J6 - J8 DC pins age ground leads and exposed paddle should be C1, C4, C7, C10 100 pf Capacitor, 0402 pkg. connected directly to the ground plane similar to C2, C5, C8, C11 10 Kpf Capacitor, 0402 pkg. that shown. A sufficient number of via holes should C3, C6, C9, C12 4.7 µf Capacitor, Tantalum be used to connect the top and bottom ground U1 HmC902lp3e Amplifier planes. The evaluation board should be mounted pCB [2] 128395 evaluation pCB to an appropriate heat sink. The evaluation circuit [1] reference this number when ordering complete evaluation pCB board shown is available from Hittite upon request. [2] Circuit Board material: rogers 4350 or Arlon 25fr InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 7 - 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC902LP3E v00.0210 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 Application Circuit - Standard (Self-Biased) Operation T m s - e s i o N w o l - s r e i f i l p m A Application Circuit - Gate Control, Reduced Current Operation InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 7 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC902LP3E v00.0210 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 Notes: T m s - e s i o N w o l - s r e i f i l p m A InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 7 - 8 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: HMC902LP3E 129787-HMC902LP3E HMC902LP3ETR