HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Typical Applications Features The HMC784MS8GE is ideal for: Input P1dB: +40 dBm @ Vdd = +8V • Cellular / 4G Infrastructure High Third Order Intercept: +62 dBm • WiMAX, WiBro & Fixed Wireless Positive Control: +3 to +8 V E • Automotive Telematics Low Insertion Loss: 0.4 dB • Mobile Radio MSOP8G Package: 14.8 mm2 • Test Equipment T Functional Diagram General Description E The HMC784MS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-rece- ive applications which require very low distortion at highL input signal power levels. The device can con- 11 trol signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm O third order intercept at +5V bias. RF1 and RF2 are T refl ective shorts when “OFF”. On-chip circuitry allows M single positive supply operation from +3 Vdc to +8 Vdc S at very low DC current with control inputs compatible S with CMOS and most TTL logic families. - T D Electrical Specifi cations, P B S T = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System A - Parameter Frequency Min. Typ. Max. Units S DC - 1.0 GHz 0.4 0.6 dB E O DC - 2.0 GHz 0.6 0.8 dB H Insertion Loss DC - 2.5 GHz 0.8 1.1 dB DC - 3.0 GHz 0.9 1.3 dB C DC - 4.0 GHz 1.3 2.0 dB T Isolation DC - 4.0 GHz 26 30 dB I W DC - 1.0 GHz 35 dB DC - 2.0 GHz 30 dB S Return Loss (On State) DC - 3.0 GHz 20 dB DC - 4.0 GHz 10 dB Vdd = +3V 32 dBm Input Power for 0.1dB Compression Vdd = +5V 0.1 - 4.0 GHz 37 dBm Vdd = +8V 38 dBm Vdd = +3V 32 35 dBm Input Power for 1dB Compression Vdd = +5V 0.1 - 4.0 GHz 35 38 dBm Vdd = +8V 38 41 dBm 0.02 - 0.1 GHz 42 dBm Input Third Order Intercept 0.1 - 2.0 GHz 62 dBm (Two-tone input power = +30 dBm each tone) 0.1 - 3.0 GHz 61 dBm 0.1 - 4.0 GHz 60 dBm Switching Characteristics tRISE, tFALL (10/90% RF) DC - 4.0 GHz 15 ns tON, tOFF (50% CTL to 10/90% RF) 40 ns Information furnishFedo rb yp Arniacloeg ,D deveicleisv eis rbye,li eavend dto tboe apclcaurcatee aondr dreeliarbsle,. pHoleweavesr,e n oc onFtoar cptr icHei,t tdieteliv eMryi,c arnodw toa vpela cCeo orrpdeorrsa: tAionanlo:g Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 11 - 224 rights of third parties th2a0t m Aay lrpeshulat fr oRm oitsa udse,. SCpehceificlamtiosnsf osurbdje,c t Mto cAha n0g1e 8wi2th4ou t Pnohticoe.n Neo : 9P7h8o-n2e:5 708-13-33249-34 7 0F0a (cid:127)x O: r9d7er8 o-n2li5ne0 a-t3 w3w7w3.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their reOspredctiever o Ownners-.line at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D

HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Insertion Loss vs. Temperature Isolation 0 0 -1 -10 RF1 B) RF2 d ON LOSS ( -2 ++ -284550 CCC ATION (dB)-20 E RTI -3 OL-30 E S S I N T I -4 -40 -5 -50 0 1 2 3 4 5 6 0 1 E2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) L 11 Insertion Loss vs. Vdd Isolation vs. Vdd 0 0 O S (dB) -1 B) -10 +++358VVV MT LOS -2 N (d -20 S NSERTION -3 +++358VVV S ISOLATIO -30 DT - I -4 -40 P B S -5 -50 0 1 2 3 4 5 6 0 1 2 3 4 5 6 - FREQUENCY (GHz) FREQUENCY (GHz) S O E H C Return Loss RF1 to RF2 Isolation T 0 0 I W -10 -10 RF1 ON RF2 OFF S RF1 OFF RF2 ON B) OSS (d-20 ON (dB)-20 RETURN L--4300 IONUPTUPTU RTE RTEUTRUNR LNO LSOSSS ISOLATI-30 -40 -50 -60 -50 0 1 2 3 4 5 6 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Information furnishFedo rb yp Arniacloeg ,D deveicleisv eis rbye,li eavend dto tboe apclcaurcatee aondr dreeliarbsle,. pHoleweavesr,e n oc onFtoar cptr icHei,t tdieteliv eMryi,c arnodw toa vpela cCeo orrpdeorrsa: tAionanlo:g Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties th2a0t m Aay lrpeshulat fr oRm oitsa udse,. SCpehceificlamtiosnsf osurbdje,c t Mto cAha n0g1e 8wi2th4ou t Pnohticoe.n Neo : 9P7h8o-n2e:5 708-13-33249-34 7 0F0a (cid:127)x O: r9d7er8 o-n2li5ne0 a-t3 w3w7w3.analog.com 11 - 225 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their reOspredctiever o Ownners-.line at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D

HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Input P1dB vs. Vdd Input P0.1dB vs. Vdd 50 50 +3V +3V 45 +5V 45 +5V +8V +8V P1dB (dBm) 3450 P0.1dB (dBm) 3450 E T 30 30 25 25 0 1 2 3 4 0 E1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) L 11 Input P1dB vs. Temperature @ Vdd = +5V Input IP3 vs. Tone Power @ Vdd = +3V 50 70 O +25 C T 45 +85 C 60 -40 C M - S P1dB (dBm) 3450 S IP3 (dBm) 4500 T D +30 dBm 30 30 +27 dBm +20 dBm P B S 25 20 - 0 1 2 3 4 0 1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) S E O H C Input IP3 vs. Tone Power @ Vdd = +5V Input IP3 vs. Tone Power @ Vdd = +8V T I 70 70 W S 60 60 m) 50 m) 50 B B IP3 (d 40 +++322070 dddBBBmmm IP3 (d 40 +++322070 dddBBBmmm 30 30 20 20 0 1 2 3 4 0 1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) Information furnishFedo rb yp Arniacloeg ,D deveicleisv eis rbye,li eavend dto tboe apclcaurcatee aondr dreeliarbsle,. pHoleweavesr,e n oc onFtoar cptr icHei,t tdieteliv eMryi,c arnodw toa vpela cCeo orrpdeorrsa: tAionanlo:g Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 11 - 226 rights of third parties th2a0t m Aay lrpeshulat fr oRm oitsa udse,. SCpehceificlamtiosnsf osurbdje,c t Mto cAha n0g1e 8wi2th4ou t Pnohticoe.n Neo : 9P7h8o-n2e:5 708-13-33249-34 7 0F0a (cid:127)x O: r9d7er8 o-n2li5ne0 a-t3 w3w7w3.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their reOspredctiever o Ownners-.line at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D

HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Input IP3 vs. Temperature Input IP3 vs. Temperature 27 dBm Tones, Vdd = +3V 27 dBm Tones, Vdd = +5V 70 70 60 60 E m) 50 m) 50 B B d d 3 ( 3 ( +25 C IP 40 IP 40 + -8450 CC +25 C T 30 + -8450 CC 30 20 20 0 1 2 3 4 0 E1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) Input IP3 vs. Temperature L 11 27 dBm Tones, Vdd = +8V Input P1dB vs. Vdd 70 50 O 60 45 T M IP3 (dBm) 4500 ++2855 CC S P1dB (dBm) 3450 - S -40 C T +3V D 30 30 +5V +8V P B S 20 25 0 0.05 0.1 0.15 0.2 0.25 0 1 2 3 4 - FREQUENCY (GHz) FREQUENCY (GHz) S O E H C Input P0.1dB vs. Vdd Input IP3 vs. Tone Power @ Vdd = +5V T 50 70 I W 45 ++35VV 60 S +8V m) B 40 m) 50 0.1dB (d 35 IP3 (dB 40 ++3207 ddBBmm P +20 dBm 30 30 25 20 0 0.05 0.1 0.15 0.2 0.25 0 0.05 0.1 0.15 0.2 0.25 FREQUENCY (GHz) FREQUENCY (GHz) Information furnishFedo rb yp Arniacloeg ,D deveicleisv eis rbye,li eavend dto tboe apclcaurcatee aondr dreeliarbsle,. pHoleweavesr,e n oc onFtoar cptr icHei,t tdieteliv eMryi,c arnodw toa vpela cCeo orrpdeorrsa: tAionanlo:g Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties th2a0t m Aay lrpeshulat fr oRm oitsa udse,. SCpehceificlamtiosnsf osurbdje,c t Mto cAha n0g1e 8wi2th4ou t Pnohticoe.n Neo : 9P7h8o-n2e:5 708-13-33249-34 7 0F0a (cid:127)x O: r9d7er8 o-n2li5ne0 a-t3 w3w7w3.analog.com 11 - 227 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their reOspredctiever o Ownners-.line at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D

HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Bias Voltage & Current Control Voltages & Currents Vdd (V) Typical Idd (μA) Vdd = +3V Vdd = +5V Vdd = +8V State (μA) (μA) (μA) +3 0.5 Low (0 to +0.2V) 0.5 2 20 +5 2 High (Vdd ±0.2V) 0.1 0.1 0.1 +8 20 E Truth Table Control Input (Vctl) Signal Path State T A B RFC to RF1 RFC to RF2 High Low Off On Low High On Off E L 11 Absolute Maximum Ratings RF Input Power (Vdd = +8V, 50 Ohm source & load impedances) +39 dBm (T = +85 °C) O ELECTROSTATIC SENSITIVE DEVICE T Supply Voltage Range OBSERVE HANDLING PRECAUTIONS -0.2 to +9V (Vdd) (Vctl = 0V) M Control Voltage Range (A & B) -0.2 to Vdd +0.5V S Channel Temperature 150 °C S - T C(doenratitneu 2o5u sm PWd/i°sCs (aTb o=v 8e5 8 °5C °)C) 1.217 W D Thermal Resistance 53.4 °C/W P (Channel to ground paddle) B S Storage Temperature -65 to +150 °C - Operating Temperature -40 to +85 °C S ESD Rating Class 1A HBM E Note: DC blocking capaOcitors are required at ports RFC, H RF1 and RF2. Their value will determine the lowest trans- C mission frequency. T I W S Information furnishFedo rb yp Arniacloeg ,D deveicleisv eis rbye,li eavend dto tboe apclcaurcatee aondr dreeliarbsle,. pHoleweavesr,e n oc onFtoar cptr icHei,t tdieteliv eMryi,c arnodw toa vpela cCeo orrpdeorrsa: tAionanlo:g Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 11 - 228 rights of third parties th2a0t m Aay lrpeshulat fr oRm oitsa udse,. SCpehceificlamtiosnsf osurbdje,c t Mto cAha n0g1e 8wi2th4ou t Pnohticoe.n Neo : 9P7h8o-n2e:5 708-13-33249-34 7 0F0a (cid:127)x O: r9d7er8 o-n2li5ne0 a-t3 w3w7w3.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their reOspredctiever o Ownners-.line at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D

HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Outline Drawing E T E L 11 NOTES: O 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] T 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. M 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO S S PCB RF GROUND. - T Package Information D P Part Number PacBkage Body Material Lead Finish MSL Rating Package Marking [1] S HMC784MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H784 XXXX - [1] 4-Digit lot number XXXX S [2] Max peak refl ow temperOature of 260 °C E H C T I W S Information furnishFedo rb yp Arniacloeg ,D deveicleisv eis rbye,li eavend dto tboe apclcaurcatee aondr dreeliarbsle,. pHoleweavesr,e n oc onFtoar cptr icHei,t tdieteliv eMryi,c arnodw toa vpela cCeo orrpdeorrsa: tAionanlo:g Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties th2a0t m Aay lrpeshulat fr oRm oitsa udse,. SCpehceificlamtiosnsf osurbdje,c t Mto cAha n0g1e 8wi2th4ou t Pnohticoe.n Neo : 9P7h8o-n2e:5 708-13-33249-34 7 0F0a (cid:127)x O: r9d7er8 o-n2li5ne0 a-t3 w3w7w3.analog.com 11 - 229 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their reOspredctiever o Ownners-.line at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D

HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 A See truth table and control voltage table. 2 B See truth table and control voltage table. E This pin is DC coupled and matched to 50 Ohms. 3, 5, 8 RFC, RF1, RF2 Blocking capacitors are required. T 4 Vdd Supply Voltage E Package bottom must also 6, 7 GND be connected to PCB RF ground. L 11 Typical Application Circuit O T M S S - T D P B S - S E O H C T I W S Notes: 1. Set logic gate and switch Vdd = +3V to +8V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +8V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. Information furnishFedo rb yp Arniacloeg ,D deveicleisv eis rbye,li eavend dto tboe apclcaurcatee aondr dreeliarbsle,. pHoleweavesr,e n oc onFtoar cptr icHei,t tdieteliv eMryi,c arnodw toa vpela cCeo orrpdeorrsa: tAionanlo:g Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 11 - 230 rights of third parties th2a0t m Aay lrpeshulat fr oRm oitsa udse,. SCpehceificlamtiosnsf osurbdje,c t Mto cAha n0g1e 8wi2th4ou t Pnohticoe.n Neo : 9P7h8o-n2e:5 708-13-33249-34 7 0F0a (cid:127)x O: r9d7er8 o-n2li5ne0 a-t3 w3w7w3.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their reOspredctiever o Ownners-.line at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D

HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Evaluation Circuit Board E T E L 11 O T M S S - T D P B S - S O E H List of Materials for Evaluation PCB 104124 [1] C T The circuit board used in the fi nal application Item Description I should be generated with proper RF circuit design W J1 - J3 PCB Mount SMA RF Connector techniques. Signal lines at the RF port should have S J4 - J7 DC Pin 50 ohm impedance and the package ground leads C1 - C3 100 pF capacitor, 0402 Pkg. and package bottom should be connected directly C4 10 KpF capacitor, 0603 Pkg. to the ground plane similar to that shown above. R1 - R3 100 Ohm Resistor, 0402 Pkg. The evaluation circuit board shown above is avail- U1 HMC784MS8GE T/R Switch able from Hittite Microwave Corporation upon PCB [2] 104122 Evaluation PCB request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 Information furnishFedo rb yp Arniacloeg ,D deveicleisv eis rbye,li eavend dto tboe apclcaurcatee aondr dreeliarbsle,. pHoleweavesr,e n oc onFtoar cptr icHei,t tdieteliv eMryi,c arnodw toa vpela cCeo orrpdeorrsa: tAionanlo:g Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties th2a0t m Aay lrpeshulat fr oRm oitsa udse,. SCpehceificlamtiosnsf osurbdje,c t Mto cAha n0g1e 8wi2th4ou t Pnohticoe.n Neo : 9P7h8o-n2e:5 708-13-33249-34 7 0F0a (cid:127)x O: r9d7er8 o-n2li5ne0 a-t3 w3w7w3.analog.com 11 - 231 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their reOspredctiever o Ownners-.line at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D