HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Typical Applications Features 8 The Hmc741sT89e is ideal for: p1dB output power: +18.5 dBm • cellular/3G & WimAX/4G Gain: 20 dB • fixed Wireless & WlAn output ip3: +42 dBm T • cATv, cable modem & DBs cascadable 50 ohm i/os m • microwave radio & Test equipment single supply: +5v s • if & rf Applications industry standard soT89 package - k robust 1000v esD, class 1c c stable current over Temperature o Active Bias network l B n Functional Diagram General Description Ai The Hmc741sT89e is an inGap Heterojunction G Bipolar Transistor (HBT) Gain Block mmic smT amplifier covering 0.05 to 3 GHz. packaged in an & industry standard soT89, the amplifier can be used r as a cascadable 50 ohm rf or if gain stage as well e as a pA or lo driver with up to +18.5 dBm output v power. The Hmc741sT89e offers 20 dB of gain with i r a +42 dBm output ip3 at 200 mHz, and can operate D directly from a +5v supply. The Hmc741sT89e exhibits excellent gain and output power stability over - s temperature, while requiring a minimal number of r external bias components. e i f i l p Electrical Specifications, Vcc = 5V, T = +25° C m A parameter min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. Units A frequency range 150 240 50 - 1000 50 - 3000 mHz Gain 19 20 19 21 16 20 12 19 dB Gain flatness ±0.3 ±0.3 ±0.3 ±2.6 dB Gain variation over Temperature 0.004 0.004 0.004 0.01 0.004 0.01 dB/ °c input return loss 16 16 16 12 dB output return loss 17 17 17 12 dB reverse isolation 25 25 25 26 dB output power for 1 dB compression 16 18.8 16 18.8 16 18.8 14 16 dBm (p1dB) output Third order intercept (ip3) (pout= 0 dBm per tone, 40.5 40.5 40.5 30 dBm 1 mHz spacing) noise figure 2.5 2.5 2.5 2.5 dB supply current (icq) 96 96 96 96 mA InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz IF Band Performance Gain & Return Loss Gain vs. Temperature 8 25 30 20 15 25 B) 10 SS2111 20 T NSE (d 05 S22 N (dB) 15 m SPO -5 GAI ++2855CC s RE-10 10 -40C - -15 k -20 5 c -25 -30 0 o 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 l FREQUENCY (GHz) FREQUENCY (GHz) B n i A Noise Figure vs. Temperature Output IP3 vs. Temperature G 8 50 & 7 45 r RE (dB) 56 ++-428055CCC m) 40 ve U B OISE FIG 34 IP3 (d 3305 ++2855CC Dri N 2 -40C - 1 25 s 0 20 r 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 e FREQUENCY (GHz) FREQUENCY (GHz) i f i l p Output IP3 vs. Vcc Output IP3 vs. Output Power m 50 50 A 45 45 40 35 40 m) m) 30 B B 3 (d 35 3 (d 25 P P 20 I I 30 4.5V 15 100MHz 5.0V 400MHz 25 5.5V 10 1GHz 5 20 0 0 0.2 0.4 0.6 0.8 1 -5 0 5 10 15 FREQUENCY (GHz) Pout (dBm) InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 8 - 2 Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Broadband Performance Gain & Return Loss Gain vs. Temperature 8 25 30 20 15 25 10 mT NSE (dB) 05 SSS212112 N (dB) 1250 - s RESPO-1-05 GAI 10 ++2855CC -15 -40C k -20 5 c -25 o -30 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 l FREQUENCY (GHz) FREQUENCY (GHz) B n i A Gain vs. Vcc Input Return Loss vs. Temperature G 25 0 & -5 r 20 ve B) 15 SS (dB)-10 Dri GAIN (d 10 455...505VVV ETURN LO--2105 ++2855CC R -40C - 5 -25 s r 0 -30 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 e FREQUENCY (GHz) FREQUENCY (GHz) i f i l p Output Return Loss vs. Temperature Input Return Loss vs. Vcc m A 0 0 +25C -5 +85C -5 -40C B) B) S (d-10 S (d-10 S S O O N L-15 N L-15 R R ETU-20 ETU-20 45..50VV R R 5.5V -25 -25 -30 -30 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Output Return Loss vs. Vcc Noise Figure vs. Temperature 8 0 8 4.5V 7 -5 5.0V B) 5.5V B) 6 +25C SS (d-10 RE (d 5 +-4805CC mT O U ETURN L--2105 OISE FIG 34 - s R N 2 k -25 1 c -30 0 o 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 l FREQUENCY (GHz) FREQUENCY (GHz) B n i A Noise Figure vs. Vcc Reverse Isolation vs. Temperature G 8 0 & 7 B) -5 r RE (dB) 56 455...505VVV ATION (d-10 ++ -284550CCC ve U L G 4 O-15 i NOISE FI 23 EVERSE IS-20 Dr 1 R-25 s - 0 -30 r 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 e FREQUENCY (GHz) FREQUENCY (GHz) i f i l p Reverse Isolation vs. Vcc Output IP3 vs. Temperature m 0 50 A 45 B) -5 40 d N ( 4.5V 35 ATIO-10 55..05VV m) 30 L B E ISO-15 P3 (d 2205 S I +25C R-20 +85C VE 15 -40C E R-25 10 5 -30 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 8 - 4 Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Output IP3 vs. Vcc Current vs. Temperature 8 50 140 45 40 120 ++2855CC -40C T 35 A) m Bm) 30 T (m100 s 3 (d 25 REN P 20 R 80 I 4.5V U - 15 55..05VV C k 10 60 c 5 o 0 40 0 0.5 1 1.5 2 2.5 3 4.5 4.75 5 5.25 5.5 l FREQUENCY (GHz) VOLTAGE (V) B n i A P1dB vs. Temperature Psat vs. Temperature G 20 20 & r 15 15 e riv P1dB (dBm) 10 ++ -284550CCC Psat (dBm) 10 ++ -284550CCC D 5 5 - s r 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 e FREQUENCY (GHz) FREQUENCY (GHz) i f i l p Power Compression @ 500 MHz Power Compression @ 2 GHz m A 25 25 E (%) 20 E (%) 20 A A AIN (dB), P 1105 PGPoAauiEnt AIN (dB), P 1105 PGPoAauiEnt G G m), 5 m), 5 B B d d out ( 0 out ( 0 P P -5 -5 -20 -17 -14 -11 -8 -5 -2 1 -20 -17 -14 -11 -8 -5 -2 1 INPUT POWER (dBm) INPUT POWER (dBm) InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Absolute Maximum Ratings 8 collector Bias voltage (vcc) +5.5 vdc elecTrosTATic sensiTive Device rf input power (rfin) +15 dBm oBserve HAnDlinG precAUTions Junction Temperature 150 °c continuous pdiss (T = 85 °c) 0.66 W T (derate 10.22 mW/°c above 85 °c) m Thermal resistance 97.83 °c/W s (junction to lead) storage Temperature -65 to +150 °c - operating Temperature -40 to +85 °c k c esD sensitivity (HmB) class 1c o l B n i Outline Drawing A G & r e v i r D - s r noTes: 1. pAckAGe BoDY mATeriAl: e molDinG compoUnD mp-180s or eQUivAlenT. i f 2. leAD mATeriAl: cu w/ Ag spoT plATinG. i 3. leAD plATinG: 100% mATTe Tin. l 4. Dimensions Are in incHes [millimeTers] p 5. Dimension Does noT inclUDe molDflAsH of 0.15mm per siDe. m 6. Dimension Does noT inclUDe molDflAsH of 0.25mm per siDe. 7. All GroUnD leADs mUsT Be solDereD To pcB rf GroUnD. A Package Information part number package Body material lead finish msl rating package marking [1] Hmc741sT89e roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] H741 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °c InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 8 - 6 Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Pin Descriptions 8 pin number function Description interface schematic This pin is Dc coupled. 1 in An off chip Dc blocking capacitor is required. T m s 3 oUT rf output and Dc Bias (vcc) for the output stage. - k c These pins and package bottom o 2, 4 GnD must be connected to rf/Dc ground. l B n i A Application Circuit G & r e v i r D - s r e i f i l p m A InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 7 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Evaluation PCB 8 T m s - k c o l B n i A G & r e v i r D - s r e i f i l List of Materials for Evaluation PCB 124390 [1] p m The circuit board used in the final application item Description A should use rf circuit design techniques. signal J1, J2 pcB mount smA connector lines should have 50 ohm impedance while the J3, J4 Dc pin package ground leads and package bottom should c1, c2 470 pf capacitor, 0402 pkg. be connected directly to the ground plane similar to c3 100 pf capacitor, 0402 pkg. that shown. A sufficient number of via holes should c4 1000 pf capacitor, 0603 pkg. be used to connect the top and bottom ground c5 2.2 µf capacitor Tantalum planes. The evaluation board should be mounted l1 820 nH inductor, 0603 pkg. to an appropriate heat sink. The evaluation circuit U1 Hmc741sT89e board shown is available from Hittite upon request. pcB [2] 119392 evaluation pcB [1] reference this number when ordering complete evaluation pcB [2] circuit Board material: fr4 InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 8 - 8 Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: HMC741ST89E 124390-HMC741ST89E HMC741ST89ETR