HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Typical Applications Features The HMC716LP3E is ideal for: Noise Figure: 1 dB T • Fixed Wireless and LTE/WiMAX/4G Gain: 18 dB M E • BTS & Infrastructure Output IP3: +33 dBm S • Repeaters and Femtocells Single Supply: +3V to +5V - S • Public Safety Radio 50 Ohm Matched InpTut/Output R • Access Points 16 Lead 3x3mm QFN Package: 9 mm2 E I F E I Functional Diagram General Description L P The HMC716LP3E is a GaAs pHEMT MMIC M LLow Noise Amplifi er that is ideal for fi xed wireless A and LTE/WiMAX/4G basestation front-end receivers E operating between 3.1 and 3.9 GHz. The amplifi er S O has been optimized to provide 1 dB noise fi gure, I 18 dB gain and +33 dBm output IP3 from a single O supply of +5V. Input and output return losses are N excellent and the LNA requires minimal external W matching and bias decoupling components. The S HMC716LP3E can be biased with +3V to +5V and O features an externally adjustable supply current L which allows the designer to tailor the linearity B performance of the LNA for each application. O Electrical Specifi cations T = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [1] A Vdd = +3V Vdd = +5V Parameter Units Min. Typ. Max. Min. Typ. Max. Frequency Range 3.1 - 3.9 3.1 - 3.9 MHz Gain 13 17 15.5 18 dB Gain Variation Over Temperature 0.01 0.01 dB/ °C Noise Figure 1 1.3 1 1.3 dB Input Return Loss 25 30 dB Output Return Loss 13 16 dB Output Power for 1 dB Compression (P1dB) 12 15 16 19 dBm Saturated Output Power (Psat) 16.5 20.5 dBm Output Third Order Intercept (IP3) 26 33 dBm Supply Current (Idd) 41 55 65 90 mA [1] Rbias resistor sets current, see application circuit herein InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Broadband Gain & Return Loss [1] [2] Gain vs. Temperature [1] 30 26 20 24 T S21 +25C E +85C M dB) 10 22 -40C S SPONSE ( -100 S22 GAIN (dB) 1280 T S - E R R -20 16 E -30 5V S11 14 3V E FI -40 12 I 1 2 3 4 5 6 7 8 3 3.2 3.4 3.6 3.8 4 L FREQUENCY (GHz) FREQUENCY (GHz) P M L A Gain vs. Temperature [2] Input Return Loss vs. Temperature [1] E O S 26 0 I O 24 GAIN (dB) 122802 ++ -284550CCC S URN LOSS (dB) --2100 ++ -284550CCC LOW N T E 16 B R -30 14 12 -40 3 3.2 3.4 3.6 3.8 4 3 3.2 3.4 3.6 3.8 4 OFREQUENCY (GHz) FREQUENCY (GHz) Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 -15 B) -5 ++ -284550CCC -20 ++ -284550CCC OSS (d -10 ON (dB) -25 URN L -15 OLATI -30 RET IS -35 -20 -40 -25 -45 3 3.2 3.4 3.6 3.8 4 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 820 Ω [2] Vdd = 3V, Rbias = 47k Ω InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 1.8 24 +85C T 1.5 +25C Vdd=5V M 21 E B) S - S SE FIGURE (d 01..92 P1dB (dBm) 1158 Vdd=3VT R OI 0.6 N -40C FIE 0.3 VVdddd==53VV 12 E ++ -284550CCC I 0 9 L 3 3.2 3.4 3.6 3.8 4 3 3.2 3.4 3.6 3.8 4 P FREQUENCY (GHz) FREQUENCY (GHz) M L A E Psat vs. Temperature [1] [2] Output IP3 vs. Temperature [1] [2] S O 24 45 I O Vdd=5V +25C 41 +85C N 21 -40C Vdd=5V W 37 m) 18 S m) O at (dB 3 (dB 33 L Ps 15 IP 29 B 12 Vdd=3V ++2855CC 25 -40C Vdd=3V 9 21 3 3.2 3.4 3.6 3.8 4 3 3.2 3.4 3.6 3.8 4 OFREQUENCY (GHz) FREQUENCY (GHz) Output IP3 and Supply Current vs. Output IP3 and Supply Current vs. Supply Voltage @ 3300 MHz [3] Supply Voltage @ 3800 MHz [3] 36 95 36 95 34 80 34 80 32 65 32 65 3 (dBm) 30 50 Idd (m 3 (dBm) 30 50 Idd (m P A P A I 28 Idd 35 ) I 28 Idd 35 ) IP3 IP3 26 20 26 20 24 5 24 5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 820 Ω [2] Vdd = 3V, Rbias = 47kΩ [3] Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [4] Measurement reference plane shown on evaluation PCB drawing. InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 3 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Power Compression @ 3300 MHz [1] Power Compression @ 3300 MHz [2] 40 35 %) 35 Pout %) 30 T AE ( 30 GPAaiEn AE ( 25 E M P P B), 25 B), 20 S d d Bm), GAIN ( 112050 Bm), GAIN ( 1105 T RS - out (d 5 out (d 5 PGoauint E P 0 P 0 PAE I E F -5 -5 I -20 -15 -10 -5 0 5 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 L INPUT POWER (dBm) INPUT POWER (dBm) P M L A Power Compression @ 3300 MHz [1] Power Compression @ 3800 MHz [2] E O S 35 32 I O %) 30 %) 26 E ( 25 E ( N A A B), P 20 S B), P 20 W AIN (d 15 AIN (d 14 O G 10 G 8 m), 5 m), L ut (dB 0 B Pout ut (dB 2 PGoauint Po -5 GPAaiEn Po -4 PAE -10 -10 -20 -16 -12 -8 -4 0 4 8 -20 -15 -10 -5 0 5 OINPUT POWER (dBm) INPUT POWER (dBm) Gain, Power & Noise Figure Gain, Power & Noise Figure vs. Supply Voltage @ 3300 MHz [3] vs. Supply Voltage @ 3800 MHz [3] 24 1.4 23 1.4 22 P1dB 1.3 21 P1dB 1.3 m) Gain m) Gain B N B N B (d 20 1.2 OIS B (d 19 1.2 OIS & P1d 18 1.1 E FIG & P1d 17 1.1 E FIG B) UR B) UR AIN (d 16 1 E (dB AIN (d 15 1 E (dB G ) G ) 14 NF 0.9 13 NF 0.9 12 0.8 11 0.8 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 820 Ω [2] Vdd = 3V, Rbias = 47k Ω [3] Rbias = 820 Ω for Vdd = 5V, Rbias = 47k for Vdd 3V InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Output IP3 vs. Rbias @ 3300 MHz Gain, Noise Figure & Rbias @ 3300 MHz 40 22 1.3 T M 36 Vdd=3V 20 E VVdddd==35VV 1.25 Vdd=5V S 18 1.2 NO S - IP3 (dBm) 2382 GAIN (dB) 16 T 1.15ISE FIGUR R 14 1.1 E (d B E 24 ) 12 1.05 I F E LI 20100 1000 10000 100000 10 1 P Rbias (Ohms) 100 1000 10000 100000 Rbias (Ohms) M L A E Output IP3 vs. Rbias @ 3800 MHz Gain, Noise Figure & Rbias @ 3800 MHz S O 40 20 1.25 I O N 36 Vdd=3V 18 VVdddd==35VV 1.2 Vdd=5V LOW IP3 (dBm) 2382 S GAIN (dB) 1146 11..115NOISE FIGUR B 12 1.05E (dB 24 ) 10 1 20 8 0.95 100 1000 10000 100000 100 1000 10000 100000 O Rbias (Ohms) Rbias (Ohms) InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 5 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Absolute Bias Resistor Range & Recommended Bias Resistor Values Rbias (Ω) Vdd (V) Idd (mA) Min Max Recommended T 2.2k 20 E M 3V 2k [1] Open Circuit 5.6k 30 S 47k 41 - 270 4T8 S 5V 0 Open Circuit 820 65 R 2.2k 81 E [1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which isE not recommended. FI I L P M L A Absolute Maximum Ratings E O S Drain Bias Voltage (Vdd) +5.5V I ELECTROSTATIC SENSITIVE DEVICE O RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm OBSERVE HANDLING PRECAUTIONS N Channel Temperature 150 °C W S Continuous Pdiss (T= 85 °C) (derate 11.1 mW/°C above 85 °C) 0.72 W O Thermal Resistance L 90 °C/W (channel to ground paddle) B Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A O Typical Supply Current vs. Supply Voltage (Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V) Vdd (V) Idd (mA) 2.7 31 3.0 41 3.3 51 4.5 51 5.0 65 5.5 80 Note: Amplifi er will operate over full voltage ranges shown above. InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Outline Drawing T M E S - S T R E I F E I L P M L A E S O I O N NOTES: W 1. LEADFRAME MATERIAL: COPPER ALLOY S 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] O 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE L 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. B 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. O Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC716LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 716 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Pin Descriptions Pin Number Function Description Interface Schematic The pins are not connected internally; however, all data T 1, 3 - 7, 9, 10, 12 - 14, 16 N/C shown herein was measured with these pins connected to E M RF/DC ground externally. S - 2 RFIN This pin is DC coupled. An off chip T S DC blocking capacitor is required. R E I E F I 11 RFOUT This pin is AC coupled and matched to 50 Ohms. L P M L A This pin is used to set the DC current of the amplifi er by 8 RES E selection of external bias resistor. See application circuit. O S I O N 15 Vdd PowerS supply voltage. Bypass capacitors are required. W See application circuit. O L B GND Ground paddle must be connected to RF/DC ground. O InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 8 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Application Circuit T M E S - S T R E I F E I L P M L A E S O I O N W S O L B O InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz Evaluation PCB T E M S - T S R E I E F I L P M L A E O S I O N W S O L B O List of Materials for Evaluation PCB 122540 [1] The circuit board used in this application should use Item Description RF circuit design techniques. Signal lines should J1, J2 PCB Mount SMA Connector have 50 Ohm impedance while the package ground J3, J4 DC Pin leads and exposed paddle should be connected C1 10 nF Capacitor, 0402 Pkg. directly to the ground plane similar to that shown. C2 1000 pF Capacitor, 0603 Pkg. A sufficient number of via holes should be used to C3 0.47 µF Capacitor, 0603 Pkg. connect the top and bottom ground planes. The C4 100 pF Capacitor, 0402 Pkg. evaluation board should be mounted to an appro- R1 820Ω Resistor, 0402 Pkg. priate heat sink. The evaluation circuit board shown R2 0 Ohm Resistor, 0402 Pkg. is available from Hittite upon request. U1 HMC716LP3E Amplifi er PCB [2] 122490 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 10 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D