HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Typical Applications Features The HmC715lp3(e) is ideal for: Noise figure: 0.9 dB T m • Cellular/3G and lTe/wimAX/4G Gain: 19 dB s • BTs & infrastructure output ip3: +33 dBm E - • repeaters and femtocells single supply: +3V to +5V e • public safety radio s 16 lead 3x3mm QfN package: 9 mm2 oi • Access points T N w Functional Diagram General Description E o The HmC715lp3(e) is a GaAs pHemT mmiC l low Noise Amplifier that is ideal for Cellular/3G and - lTe/wimAX/4G basestation front-end receivers L s operating between 2.1 and 2.9 GHz. The amplifier r has been optimized to provide 0.9 dB noise figure, e 19 dB gain and +33 dBm output ip3 from a single O i supply of +5V. input and output return losses are f i excellent and the lNA requires minimal external l matching and bias decoupling components. The p HmC715lp3(e) can be biased with +3V to +5V and m S features an externally adjustable supply current A which allows the designer to tailor the linearity performance of the lNA for each application. B O Electrical Specifications T = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V [1] A Vdd = +3V Vdd = +5V parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. frequency range 2.1 - 2.9 2.3 - 2.7 2.1 - 2.9 2.3 - 2.7 mHz Gain 14.5 18 15 18 15.5 19 16.5 19 dB Gain Variation over Temperature 0.01 0.01 0.01 0.01 dB/ °C Noise figure 0.9 1.2 0.9 1.2 0.9 1.2 0.9 1.2 dB input return loss 11.5 11 11.5 11 dB output return loss 14 13.5 12.5 12 dB output power for 1 dB 10.5 14.5 12.5 15 15 19 16.5 19.5 dBm Compression (p1dB) saturated output power (psat) 16 16.5 20 20.5 dBm output Third order intercept (ip3) 28 28.5 33 33.5 dBm supply Current (idd) 47 65 47 65 95 126 95 126 mA [1] rbias resistor sets current, see application circuit herein InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Broadband Gain & Return Loss [1] [2] Gain vs. Temperature [1] 30 26 T 24 S21 24 m 18 B) 12 22 s SPONSE (d -606 S11 S22 GAIN (dB) 1280 E se - E R--1182 16 ++ -284550CCCT oi 5V 14 N -24 3V -30 12 w 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 2.E2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) o l - L s Gain vs. Temperature [2] Input Return Loss vs. Temperature [1] r 26 0 e O 24 i +25C f 22 + -8450CC dB) -5 ++ -284550CCC li GAIN (dB) 1280 S URN LOSS (-10 Amp T E 16 R -15 14 B 12 -20 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) O Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 -20 -25 B) -5 ++2855CC OSS (d -40C ON (dB)-30 RETURN L-10 ISOLATI--4305 ++ -284550CCC -15 -45 -20 -50 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) [1] Vdd = 5V, rbias = 2kΩ [2] Vdd = 3V, rbias = 47kΩ InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 1.8 23 T m 1.5 +85C 21 +25C Vdd=5V s B) 19 E (d 1.2 m) E se - SE FIGUR 0.9 P1dB (dB 1157 Vdd=3V OI 0.6 oi N 13 T +25C N 0.3 VVdddd==53VV -40C 11 + -8450CC w 0 9 2 2.2 2.4 2.6 2.8 3 2 2.E2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) o l - L s Psat vs. Temperature [1] [2] Output IP3 vs. Temperature [1] [2] r 24 44 e O fi 22 41 +25C +85C li 20 Vdd=5V 38 -40C Amp Psat (dBm) 1168 S IP3 (dBm) 233925 Vdd=5V 14 +25C 26 +85C Vdd=3V 12 B -40C 23 Vdd=3V 10 20 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) O Output IP3 and Supply Current vs. Output IP3 and Supply Current vs. Supply Voltage @ 2300 MHz [3] Supply Voltage @ 2700 MHz [3] 36 125 38 125 34 110 36 110 32 95 34 95 30 80 32 80 IP3 (dBm) 2268 Idd 5605 Idd (mA) IP3 (dBm) 2380 Idd 5605 Idd (mA) IP3 IP3 24 35 26 35 22 20 24 20 20 5 22 5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) Voltage Supply (V) [1] Vdd = 5V, rbias = 2k Ω [2] Vdd = 3V, rbias = 47kΩ [3] rbias = 2kΩ for Vdd = 5V, rbias = 47kΩ for Vdd = 3V [4] measurement reference plane shown on evaluation pCB drawing. InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Power Compression @ 2300 MHz [1] Power Compression @ 2300 MHz [2] 25 25 T %) 20 %) 20 m E ( E ( PA 15 PA 15 s B), B), E n (d 10 n (d 10 - ai ai e m), G 5 m), G 5 s ut (dB 0 PGoauint ut (dB 0 T PGoauint oi Po -5 PAE Po -5 PAE N -10 -10 w -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -20 -17 E-14 -11 -8 -5 -2 1 INPUT POWER (dBm) INPUT POWER (dBm) o l - L s Power Compression @ 2700 MHz [1] Power Compression @ 2700 MHz [2] r 35 30 e %) 30 O %) 25 fi AE ( 25 AE ( 20 i P P l B), 20 B), 15 p Gain (d 1105 S Gain (d 10 m Bm), 5 Bm), 5 A d d Pout ( -50 B PGPoAauiEnt Pout ( -50 PGPoAauiEnt -10 -10 -20 -17 -14 -11 -8 -5 -2 1 4 7 -20 -15 -10 -5 0 5 INPUT POWER (dBm) INPUT POWER (dBm) O Gain, Power & Noise Figure Gain, Power & Noise Figure vs. Supply Voltage @ 2300 MHz [3] vs. Supply Voltage @ 2700 MHz [3] 24 1.4 22 1.3 22 P1dB 1.3 Gain 20 P1dB 1.2 m) 20 1.2 m) Gain & P1dB (dB 1168 11.1 NOISE FIG & P1dB (dB 18 1.1 NOISE FIG AIN (dB) 1124 00..89 URE (dB AIN (dB) 16 1 URE (dB G ) G 14 0.9 ) 10 0.7 NF NF 8 0.6 12 0.8 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) Voltage Supply (V) [1] Vdd = 5V, rbias = 2kΩ [2] Vdd = 3V, rbias = 47kΩ [3] rbias = 2kΩ for Vdd = 5V, rbias = 47kΩ for Vdd = 3V InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Output IP3 vs. Rbias @ 2300 MHz Gain, Noise Figure & Rbias @ 2300 MHz 35 22 1.1 T m 20 1.05 32 s 18 1 NO se - IP3 (dBm) 2269 GAIN (dB) 16 EVVdddd==35VV 0.95ISE FIGUR oi 23 Vdd=3V 1124 T 00..895E (dB) N Vdd=5V 20 10 0.8 w 100 1000 10000 100000 100 E1000 10000 100000 Rbias (Ohms) o Rbias (Ohms) l - L s Output IP3 vs. Rbias @ 2700 MHz Gain, Noise Figure & Rbias @ 2700 MHz r e 38 20 1.4 O i f 18 1.3 35 Vdd=3V i Vdd=5V l 16 1.2 NO Amp IP3 (dBm) 2392 S GAIN (dB) 14 1.1 ISE FIGUR 12 1 E (d B 26 ) 10 0.9 B VVdddd==35VV 23 8 0.8 100 1000 10000 100000 100 1000 10000 100000 Rbias (Ohms) Rbias (Ohms) O InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Absolute Bias Resistor Range & Recommended Bias Resistor Values rbias (ohms) Vdd (V) idd (mA) T min max recommended m 2K 28 s 3V 1.8k [1] open Circuit 5.6K 40 E - 47K 47 e 270 61 s 5V 0 open Circuit 820 81 T oi 2K 95 N [1] with Vdd= 3V and rbias < 1.8k ohms may result in the part becoming conditionally stable which is not recommended. w E o l - L Absolute Maximum Ratings s r Drain Bias Voltage (Vdd) +5.5V e O eleCTrosTATiC seNsiTiVe DeViCe rf input power (rfiN) i +10 dBm f (Vdd = +5 Vdc) oBserVe HANDliNG preCAUTioNs i Channel Temperature 150 °C l p Continuous pdiss (T= 85 °C) (derate 11.1 mw/°C above 85 °C) 0.72 w S m Thermal resistance A 90 °C/w (channel to ground paddle) storage Temperature -65 to +150 °C operating Temperature B-40 to +85 °C esD sensitivity (HBm) Class 1A O Typical Supply Current vs. Supply Voltage (Rbias = 2k for Vdd = 5V, Rbias = 47k for Vdd = 3V) Vdd (V) idd (mA) 2.7 35 3.0 47 3.3 57 4.5 80 5.0 95 5.5 110 Note: Amplifier will operate over full voltage ranges shown above. InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Outline Drawing T m s E - e s oi T N w E o l - L s r e O i f i NoTes: l 1. leADfrAme mATeriAl: Copper AlloY p 2. DimeNsioNs Are iN iNCHes [millimeTers] m S 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe A 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle B mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. O Package Information part Number package Body material lead finish msl rating package marking [3] HmC715lp3 low stress injection molded plastic sn/pb solder msl1 [1] 715 XXXX HmC715lp3e roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 715 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 7 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Pin Descriptions pin Number function Description interface schematic T 1, 3 - 7, 9, 10, N/C No connection required. These pins may be connected m 12 - 14, 16 to rf/DC ground without affecting performance. s E - This pin is DC coupled. see application 2 rfiN e circuit for off chip component. s T oi N This pin is DC coupled. see application 11 rfoUT circuit for off chip component. w E o l 8 res sTehleisc ptioinn i so fu esxetde rtnoa sl ebti athse r eDsCis tcour.r rseenet oafp tphLleic aatmiopnl ificeirrc ubiyt. - s r e O i f 15 Vdd power supply voltage. Bypass capacitors are required. li see application circuit. p m S A GND Ground paddle must be connected to rf/DC ground. B O InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 8 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Application Circuit T m s E - e s oi T N w E o l - L s r e O i f i l p m S A B O InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 9 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Evaluation PCB T m s E - e s T oi N w E o l - L s r e O i f i l p m S A B O List of Materials for Evaluation PCB 122492 [1] The circuit board used in this application should use item Description rf circuit design techniques. signal lines should J1, J2 pCB mount smA rf Connector have 50 ohm impedance while the package ground J3, J4 DC pin leads and exposed paddle should be connected C1 100pf Capacitor, 0402 pkg. directly to the ground plane similar to that shown. C2 1000 pf Capacitor, 0603 pkg. A sufficient number of via holes should be used to C3 0.47µf Capacitor, 0603 pkg. connect the top and bottom ground planes. The C4 68pf Capacitor, 0402 pkg. evaluation board should be mounted to an appro- C5 3.3pf Capacitor, 0402 pkg. priate heat sink. The evaluation circuit board shown r1 2kΩ resistor, 0402 pkg. is available from Hittite upon request. U1 HmC715lp3(e) Amplifier pCB [2] 122490 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350. or Arlon 25r InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 10 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D