ICGOO在线商城 > 射频/IF 和 RFID > RF 放大器 > HMC667LP2E
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HMC667LP2E产品简介:
ICGOO电子元器件商城为您提供HMC667LP2E由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC667LP2E价格参考。HittiteHMC667LP2E封装/规格:RF 放大器, 射频放大器 IC 通用 2.3GHz ~ 2.7GHz 6-DFN(2x2)。您可以下载HMC667LP2E参考资料、Datasheet数据手册功能说明书,资料中有HMC667LP2E 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | IC MMIC AMP LNA PHEMT 6-DFN |
产品分类 | |
品牌 | Hittite Microwave Corporation |
数据手册 | |
产品图片 | |
P1dB | 16.5dB |
产品型号 | HMC667LP2E |
RF类型 | 通用 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
供应商器件封装 | 6-DFN(2x2) |
其它名称 | 1127-1516-2 |
包装 | 带卷 (TR) |
噪声系数 | 0.9dB |
增益 | 19dB |
封装/外壳 | 6-VDFN 裸露焊盘 |
标准包装 | 500 |
测试频率 | - |
电压-电源 | 3 V ~ 5 V |
电流-电源 | 59mA |
频率 | 2.3GHz ~ 2.7GHz |
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Typical Applications Features The HMC667LP2(E) is ideal for: Low Noise Figure: 0.75 dB T M • WiMAX, WiBro & Fixed Wireless High Gain: 19 dB S • SDARS & WLAN Receivers High Output IP3: +29.5 dBm E - • Infrastructure & Repeaters Single Supply: +3V to +5V E • Access Points S 6 Lead 2x2mm DFN Package: 4 mm2 OI • Telematics & DMB T N W Functional Diagram General Description E O The HMC667LP2(E) is a GaAs PHEMT MMIC Low L Noise Amplifi er that is ideal for WiMAX, WLAN and - fi xed wireless receivers operating between 2300 L S and 2700 MHz. This self-biased LNA has been R optimized to provide 0.75 dB noise fi gure, 19 dB E gain and +29.5 dBm output IP3 from a single supply O I of +5V. Input and output return losses are excellent F and the LNA requires minimal external matching and I L bias decoupling components. The HMC667LP2(E) P can also operate from a +3V supply for lower power M S applications. A B O Electrical Specifi cations, T = +25° C A Vdd = +3 Vdc Vdd = +5 Vdc Parameter Units Min. Typ. Max. Min. Typ. Max. Frequency Range 2300 - 2700 2300 - 2700 MHz Gain 14 17.5 16 19 dB Gain Variation Over Temperature 0.01 0.01 dB/ °C Noise Figure 0.9 1.2 0.75 1.1 dB Input Return Loss 10 12 dB Output Return Loss 15 14 dB Output Power for 1 dB 9.5 11.5 13.5 16.5 dBm Compression (P1dB) Saturated Output Power (Psat) 12.5 17 dBm Output Third Order Intercept (IP3) 22 29.5 dBm Supply Current (Idd) 24 32 59 75 mA InfoFrmoarti opn rfiucrneis,h edde blyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infiy3c ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteon.ceo: 1m-800-ANALOG-D
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Broadband Gain & Return Loss Gain vs. Temperature 25 24 T 20 Vdd=5V S21 22 M 15 B) 10 20 S SPONSE (d -505 S11 GAIN (dB) 18 E SE - RE -10 16 Vdd=3V T OI -15 +25C -20 VVdddd==53VV S22 14 + -8450CC N -25 12 W 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 2.1 2.E2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) O L - L S Input Return Loss vs. Temperature [1] Output Return Loss vs. Temperature [1] R 0 0 E O I F S (dB) -5 ++ -284550CCC S (dB) -5 ++ -284550CCC PLI S S N LO -10 S N LO -10 M UR UR A T T E E R -15 R -15 B -20 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) O Reverse Isolation vs. Temperature [1] P1dB vs. Temperature -20 20 Vdd=5V 18 -25 16 B) -30 N (d Bm) 14 TIO -35 B (d Vdd=3V A d 12 L 1 SO -40 +25C P I +85C 10 -40C -45 8 ++2855CC -40C -50 6 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) [1] Vdd = 5V InfoFrmoarti opn rfiucrneis,h edde blyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteon.ceo: 1m-800-ANALOG-D
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Noise Figure vs. Temperature [1] Psat vs. Temperature 1.6 20 T Vdd=5V M 1.4 VVdddd==53VV 18 +85C S B) 1.2 +25C 16 d SE - SE FIGURE ( 0.81 Psat (dBm) 1124 EVdd=3V OI OI N 0.6 10 T+25C +85C N 0.4 8 -40C -40C 0.2 6 W 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2 2.1 2.E2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) O L - L S Output IP3 vs. Temperature R 36 E I 34 +25C O F 32 + -8450CC Vdd=5V I L 30 P m) 28 B M 3 (d 26 S Vdd=3V A IP 24 22 20 B18 16 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) O Output IP3 and Idd vs. Output IP3 and Idd vs. Supply Voltage @ 2300 MHz Supply Voltage @ 2500 MHz 36 76 36 76 34 70 34 70 32 64 32 64 30 58 30 58 28 52 28 52 IP3 (dB) 2246 4406 Idd (mA) IP3 (dB) 2246 4406 Idd (mA) 22 34 22 34 20 28 20 28 18 22 18 22 16 16 16 16 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) Voltage Supply (V) [1] Measurement reference plane shown on evaluation PCB drawing. InfoFrmoarti opn rfiucrneis,h edde blyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infiy3c ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteon.ceo: 1m-800-ANALOG-D
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Output Power, Gain & PAE @ 2300 MHz [1] Output Power, Gain & PAE @ 2300 MHz [2] 25 25 T %) 20 %) 20 M E ( E ( PA 15 PA 15 S B), B), E n (d 10 n (d 10 - ai ai E G 5 G 5 m), m), S ut (dB 0 Pout ut (dB 0 T PGoauint OI Po -5 GPAaiEn Po -5 PAE N -10 -10 W -25 -20 -15 -10 -5 0 -25 -2E0 -15 -10 -5 0 INPUT POWER (dBm) INPUT POWER (dBm) O L - L Output Power, Gain & PAE @ 2500 MHz [1] Output Power, Gain & PAE @ 2500 MHz [2] S R 25 25 E O %) 20 %) 20 FI E ( E ( PA 15 PA 15 LI B), B), P n (d 10 n (d 10 M ai S ai G 5 G 5 m), m), A dB 0 dB 0 ut ( Pout ut ( Pout Po -5 B GPAaiEn Po -5 GPAaiEn -10 -10 -25 -20 -15 -10 -5 0 -25 -20 -15 -10 -5 0 INPUT POWER (dBm) INPUT POWER (dBm) O P1dB, Gain, & Noise Figure P1dB, Gain, & Noise Figure vs. Supply Voltage @ 2300 MHz vs. Supply Voltage @ 2500 MHz 24 1.2 24 1.2 22 NF 1.1 22 NF 1.1 m) 20 1 m) 20 1 B N B N B (d 18 0.9 OIS B (d 18 0.9 OIS d E d E & P1 16 0.8 FIG & P1 16 0.8 FIG dB) 14 0.7 URE dB) 14 0.7 URE ain ( 12 P1dB 0.6 (dB ain ( 12 P1dB 0.6 (dB G Gain ) G Gain ) 10 0.5 10 0.5 8 0.4 8 0.4 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) Voltage Supply (V) [1] Vdd = 5V [2] Vdd = 3V InfoFrmoarti opn rfiucrneis,h edde blyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteon.ceo: 1m-800-ANALOG-D
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Gain & Return Loss w/ SDARS Tune [1] Noise Figure vs. Vdd w/ SDARS Tune [2] 25 1.6 T 20 M 1.4 15 - S E (dB) 150 SSS122121 RE (dB) 1.21 VVdddd==53VV E OISE RESPONS -1-050 NOISE FIGU 00..68 T -15 N -20 0.4 -25 0.2 W 2.25 2.3 2.35 2.4 2.45 2.25 E2.3 2.35 2.4 2.45 O FREQUENCY (GHz) FREQUENCY(GHz) L - L S Absolute Maximum Ratings R E Drain Bias Voltage (Vdd) +6 Vdc O I RF Input Power (RFIN) +10 dBm F I Channel Temperature 150 °C L Continuous Pdiss (T= 85 °C) P 0.38 W (derate 5.88 mW/°C above 85 °C) M Thermal Resistance S 170 °C/W A (Channel to Ground Paddle) Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C B ELECTROSTATIC SENSITIVE DEVICE OBSERVE OHANDLING PRECAUTIONS [1] Vdd = 5V [2] Measurement reference plane shown on evaluation PCB drawing. InfoFrmoarti opn rfiucrneis,h edde blyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infiy3c ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteon.ceo: 1m-800-ANALOG-D
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Outline Drawing T M S E - E S T OI N W E O L - L S R NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY E O 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] I F 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. I 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. L PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. P 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. M S 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. A 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. B Package Information Part Number O Package Body Material Lead Finish MSL Rating Package Marking [3] HMC667LP2 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 667 XXX HMC667LP2E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 667 XXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 3-Digit lot number XXX InfoFrmoarti opn rfiucrneis,h edde blyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteon.ceo: 1m-800-ANALOG-D
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Pin Descriptions Pin Number Function Description Interface Schematic T M These pins and package bottom must 1, 2, 5 GND be connected to RF/DC ground. S E - E This pin is DC coupled 3 RFIN S See the application circuit for off-chip components OI T N This pin is AC coupled W 4 RFOUT and matched to 50 Ohms. E O L - 6 Vdd Power supply voltage. Bypass capaLcitors S are required. See application circuit. R E O I F I L Components for Selected Band P M Components C1 L1 EvaluSation PCB Number A Broadband 2.7 pF 2.0 nH 121891 SDARS 2.2 pF 4.3 nH 122404 B O InfoFrmoarti opn rfiucrneis,h edde blyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 7 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infiy3c ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteon.ceo: 1m-800-ANALOG-D
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Evaluation PCB T M S E - E S T OI N W E O L - L S R E O I F I L P M S A B O List of Materials for Evaluation PCB [1] The circuit board used in this application should use Item Description RF circuit design techniques. Signal lines should J1 - J2 PCB Mount SMA Connector have 50 Ohm impedance while the package ground J3 - J4 DC Pin leads and exposed paddle should be connected C1 2.7 pF Capacitor, 0402 Pkg. directly to the ground plane similar to that shown. C2 1000 pF Capacitor, 0402 Pkg. A sufficient number of via holes should be used to C3 10 nF Capacitor, 0603 Pkg. connect the top and bottom ground planes. The C4 2.2 μF Capacitor, CASE-A Tantalum evaluation board should be mounted to an appro- L1 2 nH Inductor, 0402 Pkg. priate heat sink. The evaluation circuit board shown U1 HMC667LP2(E) Amplifi er is available from Hittite upon request. PCB [2] 117163 Evaluation PCB [1] When requesting an evaluation board, please reference the appropriate evaluation PCB number listed in the table “Components for Selected Band” on previous page [2] Circuit Board Material: Rogers 4350 InfoFrmoarti opn rfiucrneis,h edde blyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 8 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteon.ceo: 1m-800-ANALOG-D