HMC636ST89 636ST89E / v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz Typical Applications Features The HmC636sT89(e) is ideal for: low noise figure: 2.2 dB • Cellular / PCS / 3G High p1dB output power: +22 dBm • WiMAX, WiBro, & Fixed Wireless High output ip3: +40 dBm • CATV & Cable Modem Gain: 13 dB 9 • Microwave Radio 50 ohm i/o’s - no external matching industry standard soT89 package T Functional Diagram General Description m The HmC636sT89(e) is a GaAs pHemT, High s linearity, low noise, wideband Gain Block Amplifier - covering 0.2 to 4.0 GHz. packaged in an industry r standard soT89, the amplifier can be used as either e a cascadable 50 ohm gain stage, a pA pre-Driver, a w low noise Amplifier, or a Gain Block with up to +23 o dBm output power. This versatile Gain Block Amplifier p is powered from a single +5V supply and requires no & external matching components The internally matched topology makes this amplifier compatible with virtually r any pCB material or thickness. A e n i l - Electrical Specifications, Vs= 5.0 V, T = +25° C A s r parameter min Typ. max min. Typ. max. Units e frequency range 0.2 - 2.0 2.0 - 4.0 GHz fi Gain 10 13 5 10 dB li Gain Variation over Temperature 0.01 0.02 0.01 0.02 dB/ °C p input return loss 10 10 dB m output return loss 13 15 dB A reverse isolation 22 20 dB output power for 1 dB Compression (p1dB) 19 22 20 23 dBm output Third order intercept (ip3) 36 39 36 39 dBm noise figure 2.5 2 dB supply Current (icq) 155 155 175 mA note: Data taken with broadband bias tee on device output. InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz Broadband Gain & return Loss Gain vs. Temperature 20 16 15 14 10 12 B) NSE (d 05 SSS212112 N (dB) 180 RESPO -5 GAI 6 +25C 9 +85C -10 4 -40C -15 2 T -20 0 0 1 2 3 4 5 6 0 1 2 3 4 m FREQUENCY (GHz) FREQUENCY (GHz) s - r input return Loss vs. Temperature Output return Loss vs. Temperature e w 0 0 o +25C p dB) -5 dB) -5 +-4805CC S ( S ( & S S O O N L-10 N L-10 r R R U U A T T E E R-15 +25C R-15 e +85C -40C n i l -20 -20 0 1 2 3 4 0 1 2 3 4 - FREQUENCY (GHz) FREQUENCY (GHz) s r e i reverse isolation vs. Temperature noise Figure vs. Temperature f i 0 10 l p 9 B) -5 +25C 8 +25C m ATION (d -10 +-4805CC RE (dB) 67 +-4805CC A L U O G 5 E IS -15 E FI 4 S S VER NOI 3 E R -20 2 1 -25 0 0 1 2 3 4 0 1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 9 - 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz p1dB vs. Temperature psat vs. Temperature 30 30 25 25 20 20 m) m) 9 P1dB (dB 15 Psat (dB 15 10 10 +25C +25C +85C +85C -40C 5 -40C 5 T 0 0 m 0 1 2 3 4 0 1 2 3 4 s FREQUENCY (GHz) FREQUENCY (GHz) - r e power Compression @ 850 MHz power Compression @ 2200 MHz w 28 32 o %) 24 %) 28 Pout p E ( 20 E ( 24 GPAaiEn A A & B), P 16 B), P 20 d d 16 N ( 12 N ( r AI AI 12 G 8 G A m), 4 m), 8 e dB dB 4 n ut ( 0 Pout ut ( 0 i Po -4 GPAaiEn Po -4 l -8 -8 - -20 -16 -12 -8 -4 0 4 8 12 16 -20 -16 -12 -8 -4 0 4 8 12 16 s INPUT POWER (dBm) INPUT POWER (dBm) r e Gain, power, Output ip3 & Supply Current i f Output ip3 vs. input Tone power vs. Supply Voltage @ 850 MHz i pl 45 m) 50 160 B m 40 P3 (d Is 140 A m), I 40 120 B IP3 (dBm) 3305 m), Psat (d 30 GPPO1saIPadint3B 81000Is (mA B 60 ) d 25 ++ 1050 dddBBBmmm P1dB ( 20 40 B), 20 d 20 N ( 10 0 0 1 2 3 4 AI G 4.5 4.75 5 5.25 5.5 FREQUENCY (GHz) Vs (Vdc) InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz Absolute Maximum ratings Collector Bias Voltage (Vcc) +5.5 Volts eleCTrosTATiC sensiTiVe DeViCe rf input power (rfin)(Vcc = +5 Vdc) +16 dBm oBserVe HAnDlinG preCAUTions Channel Temperature 150 °C Continuous pdiss (T = 85 °C) 0.86 w (derate 13.3 mw/°C above 85 °C) Thermal resistance 75.6 °C/w 9 (Channel to lead) storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C esD sensitivity (HBm) Class 1A T m s - Outline Drawing r e w o p & r A e n i l - s noTes: r 1. pACKAGe BoDY mATeriAl: molDinG CompoUnD mp-180s or eQUiVAlenT. e 2. leAD mATeriAl: Cu w/ Ag spoT plATinG. i f 3. leAD plATinG: 100% mATTe Tin. i 4. Dimensions Are in inCHes [millimeTers] l 5. Dimension Does noT inClUDe molDflAsH of 0.15mm per siDe. p 6. Dimension Does noT inClUDe molDflAsH of 0.25mm per siDe. m 7. All GroUnD leADs mUsT Be solDereD To pCB rf GroUnD. A package information part number package Body material lead finish msl rating package marking [3] HmC636sT89 low stress injection molded plastic sn/pb solder msl1 [1] H636 XXXX HmC636sT89e roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] H636 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 9 - 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz pin Descriptions pin number function Description interface schematic This pin is DC coupled. An off-chip 1 rfin DC blocking capacitor is required. 9 rf output and DC BiAs for the amplifier. 3 rfoUT see Application Circuit for off-chip components. T m s These pins and package bottom must 2, 4 GnD be connected to rf/DC ground. - r e w o p Application Circuit & r A e n i l - s r e i f i l p m A InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz Evaluation pCB 9 T m s - r e w o p & r A e n i l - s r e i List of Materials for Evaluation pCB 119394 [1] f i The circuit board used in the final application l item Description should use rf circuit design techniques. signal p J1 - J2 pCB mount smA Connector m lines should have 50 ohm impedance while the J3 - J4 DC pin package ground leads and package bottom should A C1 - C3 100 pf Capacitor, 0402 pkg. be connected directly to the ground plane similar to C4 1000 pf Capacitor, 0603 pkg. that shown. A sufficient number of via holes should C5 2.2 µf Capacitor, Tantalum be used to connect the top and bottom ground l1 47 nH inductor, 0603 pkg. planes. The evaluation board should be mounted U1 HmC636sT89(e) to an appropriate heat sink. The evaluation circuit pCB [2] 119392 evaluation pCB board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: fr4 InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 9 - 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: HMC636ST89E HMC636ST89TR HMC636ST89ETR 119394-HMC636ST89 HMC636ST89