HMC625LP5 625LP5E / v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5(E) is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection • WiBro / WiMAX / 4G High Output IP3: +33 dBm TTL/CMOS Compatible • Microwave Radio & VSAT Serial, Parallel, or latched Parallel Control • Test Equipment and Sensors ±0.25 dB Typical Gain Step Error • IF & RF Applications Single +5V Supply 32 Lead 5x5mm SMT Package: 25mm2 Functional Diagram General Description 12 The HMC625LP5(E) is a digitally controlled variable gain amplifi er which operates from DC to 6 GHz, and can be programmed to provide anywhere from 13.5 T dB attenuation, to 18 dB of gain, in 0.5 dB steps. The M HMC625LP5(E) delivers noise fi gure of 6 dB in its S maximum gain state, with output IP3 of up to +33 dBm - in any state. The dual mode control interface is CMOS/ L TTL compatible, and accepts either a three wire serial A input or a 6 bit parallel word. The HMC625LP5(E) also T features a user selectable power up state and a serial I G output port for cascading other Hittite serial controlled I components. The HMC625LP5(E) is housed in a D RoHS compliant 5x5 mm QFN leadless package, and - requires no external matching components. S R E I F LI Electrical Specifi cations, T = +25° C, 50 Ohm System, Vdd= +5V, Vs= +5V A P Parameter Frequency Min. Typ. Max. Units M DC - 3.0 GHz 13 18 dB A Gain (Maximum Gain State) 3.0 - 6.0 GHz 5 13 dB N Gain Control Range 31.5 dB I Input Return Loss DC - 6.0 GHz 15 dB A Output Return Loss DC - 6.0 GHz 12 dB G Gain Accuracy: (Referenced to Maximum Gain State) DC - 0.8 GHz ± (0.10 + 5% of Gain Setting) Max. dB E All Gain States 0.8 - 6.0 GHz ± (0.30 + 3% of Gain Setting) Max. dB L DC - 3.0 GHz 16 19 Output Power for 1dB Compression dBm B 3.0 - 6.0 GHz 13 16 A Output Third Order Intercept Point DC - 6.0 GHz 33 dBm I (Two-Tone Input Power= 0 dBm Each Tone) R Noise Figure DC - 6.0 GHz 6 dB A Supply Current (Idd) DC - 6.0 GHz 60 88 100 mA V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 12 - 1 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Normalized Attenuation [2] Maximum Gain vs. Frequency (Only Major States are Shown) 25 0 [1] 20 B) d -5 15 N ( O 10 TI -10 A dB) 5 [2] ENU -15 N ( 0 TT GAI -5 D A -20 E Z -10 +25 C ALI -25 -15 +85 C M R -40 C O -30 -20 N -25 -35 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) FREQUENCY (GHz) 12 Input Return Loss [1] Output Return Loss [1] (Only Major States are Shown) (Only Major States are Shown) T 0 0 M -5 -5 S B) -10 B) -10 - d d S ( -15 S ( -15 L OS OS A L -20 L -20 N N T R R U -25 U -25 I T T G E E R R -30 -30 I D -35 -35 - -40 -40 0 1 2 3 4 5 6 0 1 2 3 4 5 6 S FREQUENCY (GHz) FREQUENCY (GHz) R E I Input Return Loss [2] Output Return Loss [2] F (Only Major States are Shown) (Only Major States are Shown) LI P 0 0 M -5 -5 A B) -10 B) -10 d d N S ( -15 S ( -15 S S I O O A L -20 L -20 RN RN G U -25 U -25 ET ET R R E -30 -30 L -35 -35 B -40 -40 A 0 1 2 3 4 5 6 0 1 2 3 4 5 6 I R FREQUENCY (GHz) FREQUENCY (GHz) A V [1] Tested with broadband bias tee on RF ports and C1 = 10,000pF [2] C1, C6 and C8 = 100pF, L1 = 24nH For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 2 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Bit Error vs. Frequency [2] (Only Major States are Shown) Bit Error vs. Attenuation State [2] 2 1 0.8 1.5 0.6 500MHz, 1GHz, 2GHz 1 B) B) 0.4 R (d 0.5 R (d 0.2 O O R 0 R 0 R R T E-0.5 T E-0.2 BI BI-0.4 -1 -0.6 100MHz, 3GHz, 4GHz -1.5 -0.8 -2 -1 0 1 2 3 4 5 6 0 4 8 12 16 20 24 28 32 12 FREQUENCY (GHz) ATTENUATION STATE (dB) Normal Relative Phase vs. Frequency [2] Step Error vs. Frequency [2] (Only Major States are Shown) (Only Major States are Shown) T M 80 1 S 31.5 dB 0.8 60 g) 16 dB 0.6 L - SE (de 40 8 dB R (dB) 00..24 TA E PHA 20 ERRO 0 GI ELATIV 0 STEP --00..42 I R D -20 0.5 - 4 dB -0.6 -0.8 - -40 -1 S 0 1 2 3 4 5 6 0 1 2 3 4 5 6 R FREQUENCY (GHz) FREQUENCY (GHz) E I F I L P M A N I A G E L B A I R A V [1] Tested with broadband bias tee on RF ports and C1 = 10,000pF [2] C1, C6 and C8 = 100pF, L1 = 24nF For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 12 - 3 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Serial Control Interface The HMC625LP5(E) contains a 3-wire SPI compatible digital interface (SERIN, CLK, LE). It is activated when P/S is kept high. The 6-bit serial word must be loaded MSB fi rst. The positive-edge sensitive CLK and LE requires clean transitions. If mechanical switches were used, sufficient debouncing should be provided. When LE is high, 6-bit data in the serial input register is transferred to the attenuator. When LE is high CLK is masked to prevent data transition during output loading. When P/S is low, 3-wire SPI interface inputs (SERIN, CLK, LE) are disabled and serial input register is loaded asynchronously with parallel digital inputs (D0-D5). When LE is high, 6-bit parallel data is transferred to the attenuator. For all modes of operations, the DVGA state will stay constant while LE is kept low. 12 T M S - L A T I G I D - S Parameter Typ. R Timing Diagram (Latched Parallel Mode) Min. serial period, tSCK 100 ns E Control set-up time, t 20 ns I CS F Control hold-time, tCH 20 ns LI LE setup-time, t 10 ns LN P Min. LE pulse width, tLEW 10 ns M Min LE pulse spacing, t 630 ns LES A Serial clock hold-time from LE, t 10 ns CKN N Hold Time t 0 ns PH I Latch Enable Minimum width, t 10 ns A LEN Setup Time, t 2 ns G PS E Parallel Mode (Direct Parallel Mode & Latched Parallel Mode) L Note: The parallel mode is enabled when P/S is set to low. B A Direct Parallel Mode - The attenuation state is changed by the Control Voltage Inputs directly. The LE (Latch Enable) I must be at a logic high to control the attenuator in this manner. R Latched Parallel Mode - The attenuation state is selected using the Control Voltage Inputs and set while the LE is in A V the Low state. The attenuator will not change state while LE is Low. Once all Control Voltage Inputs are at the desired states the LE is pulsed. See timing diagram above for reference. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 4 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Power-Up States PUP Truth Table If LE is set to logic LOW at power-up, the logic state of Gain Relative to Maximum LE PUP1 PUP2 PUP1 and PUP2 determines the power-up state of the Gain part per PUP truth table. If the LE is set to logic HIGH 0 0 0 -31.5 at power-up, the logic state of D0-D5 determines the 0 1 0 -24 power-up state of the part per truth table. The DVGA 0 0 1 -16 latches in the desired power-up state approximately 0 1 1 Insertion Loss 200 ms after power-up. 1 X X 0 to -31.5 dB Note: The logic state of D0 - D5 determines the Power-On Sequence power-up state per truth table shown below when LE The ideal power-up sequence is: GND, Vdd, digital is high at power-up. inputs, RF inputs. The relative order of the digital 12 inputs are not important as long as they are powered after Vdd / GND Absolute Maximum Ratings Truth Table T M RF Input Power [1] 11.5 dBm (T = 85 °C) Control Voltage Input Gain Relative to S Digital Inputs (Reset, Shift Clock, Latch Enable & Serial Input) -0.5 to Vdd +0.5V D5 D4 D3 D2 D1 D0 MaGxaiminum - Bias Voltage (Vdd) 5.6V L High High High High High High 0 dB A Collector Bias Voltage (Vcc) 5.5V High High High High High Low -0.5 dB T Channel Temperature 150 °C High High High High Low High -1 dB I G Continuous Pdiss (T = 85 °C) 0.98 W High High High Low High High -2 dB (derate 15.1 mW/°C above 85 °C) [1] DI Thermal Resistance 66.3 °C/W High High Low High High High -4 dB - Storage Temperature -65 to +150 °C High Low High High High High -8 dB Low High High High High High -16 dB S Operating Temperature -40 to +85 °C Low Low Low Low Low Low -31.5 dB R [1] At max gain settling Any combination of the above states will provide a reduction in E gain approximately equal to the sum of the bits selected. I F LI Bias Voltage Control Voltage Table P Vdd (V) Idd (Typ.) (mA) State Vdd = +3V Vdd = +5V M 5V 2 Low 0 to 0.5V @ <1 μA 0 to 0.8V @ <1 μA A Vs (V) Is (Typ.) (mA) High 2 to 3V @ <1 μA 2 to 5V @ <1 μA N 5V 86 I A G E ELECTROSTATIC SENSITIVE DEVICE L OBSERVE HANDLING PRECAUTIONS B A I R A V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 12 - 5 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Outline Drawing 12 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. T 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. M PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. S 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE - SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. L Package Information A T Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] I G HMC625LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H625 XXXX I D HMC625LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H625 XXXX - [1] Max peak refl ow temperature of 235 °C S [2] Max peak refl ow temperature of 260 °C R [3] 4-Digit lot number XXXX E I Pin Descriptions F I L Pin Number Function Description Interface Schematic P This pin is DC coupled. M 1 AMPIN An off chip DC blocking capacitor is required. A N I RF output and DC bias (Vcc) for A 29 AMPOUT the output stage of the amplifi er. G E 2, 3, 13, These pins and package bottom GND L 28, 30 - 32 must be connected to RF/DC ground. B A These pins are DC coupled and matched to 50 Ohms. ATTIN, I 4, 12 ATTOUT Blocking capacitors are required. Select value based R on lowest frequency of operation. A External capacitors to ground is required. Select value for lowest V 5 - 10 ACG1 - ACG6 frequency of operation. Place capacitor as close to pins as possible. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 6 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Pin Descriptions Pin Number Function Description Interface Schematic The pins are not connected internally; however, all data shown 11 N/C herein was measured with these pins connected to RF/DC ground externally. 14 SEROUT Serial input data delayed by 6 clock cycles. 12 15, 16 PUP2, PUP1 D5, D4, D3, T 18 - 23 D2, D1, D0 M 24 P/S S 25 CLK - 26 SERIN L A T 27 LE I G 17 Vdd Supply Voltage I D Application Circuit - S R E I F I L P M A N I A G E L B A I R A V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 12 - 7 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Evaluation PCB 12 T M S - L A T I G I D - S R E I List of Materials for Evaluation PCB 116960 [1] F I The circuit board used in the application should L Item Description P use RF circuit design techniques. Signal lines J1 - J2 PCB Mount SMA Connector M should have 50 Ohm impedance while the package J3 18 Pin DC Connector A ground leads and exposed paddle should be J4 - J6 DC Pin connected directly to the ground plane similar to that N C1 - C9 100 pF Capacitor, 0402 Pkg. shown. A sufficient number of via holes should be I C11 - C12 1000 pF Capacitor, 0402 Pkg. A used to connect the top and bottom ground planes. C14 2.2 μF Capacitor, CASE A Pkg. G The evaluation circuit board shown is available from R1 - R14 100 kOhm Resistor, 0402 Pkg. Hittite upon request. E R15 1.8 Ohm Resistor, 1206 Pkg. L SW1, SW2 SPDT 4 Position DIP Switch B L1 24 nH Inductor, 0603 Pkg. A I U1 HMC625LP5(E) Variable Gain Amplifi er R PCB [2] 116958 Evaluation PCB A [1] Reference this number when ordering complete evaluation PCB V [2] Circuit Board Material: Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 8 Application Support: Phone: 978-250-3343 or apps@hittite.com