HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Typical Applications Features The HmC617lp3(e) is ideal for: Noise figure: 0.5 dB T m • Cellular/3G and lTe/wimAX/4G Gain: 16 dB s • BTs & infrastructure output ip3: +37 dBm E - • repeaters and femtocells single supply: +3V to +5V e • public safety radio s 50 ohm matched input/output oi • Access points 16 lead 3x3mm QfN paTckage: 9 mm2 N w Functional Diagram General Description E o The HmC617lp3(e) is a GaAs pHemT mmiC l low Noise Amplifier that is ideal for Cellular/3G and - lTe/wimAX/4G basestation front-end receivers L s operating between 550 and 1200 mHz. The amplifier r has been optimized to provide 0.5 dB noise figure, e 16 dB gain and +37 dBm output ip3 from a single O i supply of +5V. input and output return losses are f i excellent and the lNA requires minimal external l matching and bias decoupling components. The p HmC617lp3(e) shares the same package and m S pinout with the HmC618lp3(e) 1.7 - 2.2 GHz lNA. A The HmC617lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity B performance of the lNA for each application. The HmC617lp3(e) offers improved noise figure versus the previously released HmC372lp3(e) and the HmC376lp3(e). O Electrical Specifications, T = +25° C, Rbias = 3.92k Ohms* A Vdd = +3 Vdc Vdd = +5 Vdc parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. frequency range 698 - 960 550 - 1200 698 - 960 550 - 1200 mHz Gain 13 16 11 15 13.5 16 11.5 16 dB Gain Variation over Temperature 0.003 0.003 0.005 0.005 dB/ °C Noise figure 0.5 0.8 0.5 1.1 0.55 0.85 0.6 1.1 dB input return loss 28 22 22 17 dB output return loss 12 14 12 15 dB output power for 1 dB 14 16 12.5 16 18.5 21 16.5 20 dBm Compression (p1dB) saturated output power (psat) 17 16.5 21 20.5 dBm output Third order intercept (ip3) 31 30 37 37 dBm supply Current (idd) 30 45 30 45 88 115 88 115 mA * rbias resistor sets current, see application circuit herein InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Broadband Gain & Return Loss [1] [2] Gain vs. Temperature [1] 25 22 T 20 S21 15 20 m RESPONSE (dB)-11-05050 S22VVdddd==53VV GAIN (dB) 111468 E++- 284550CCC se - s -15 T oi -20 S11 12 N -25 -30 10 w 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.5 0.6 E0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) o l - L s Gain vs. Temperature [2] Input Return Loss vs. Temperature [1] r 22 0 e O i 20 -5 f B) 18 ++- 284550CCC SS (dB)-10 ++- 284550 CCC pli GAIN (d 16 S URN LO-15 Am 14 ET-20 R 12 -25 B 10 -30 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) O Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 0 -5 -5 SS (dB)-10 N (dB)-10 ++-428055 CCC O O N L-15 ATI-15 R L ETU-20 ++2855 CC ISO-20 R - 40 C -25 -25 -30 -30 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 1.2 24 T m 1 Vdd=5V 22 Vdd=5V s B) Vdd=3V 20 e - FIGURE (d 00..68 +25 C +85C B (dBm) 18 Vdd=3V E s OISE 0.4 P1d 16 oi N 14 T+25 C -40C +85 C N 0.2 12 - 40 C w 0 10 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.5 0.6 E0.7 0.8 0.9 1 1.1 1.2 1.3 o FREQUENCY (GHz) FREQUENCY (GHz) l - L s Psat vs. Temperature [1] [2] Output IP3 vs. Temperature [1] [2] r 24 48 e fi 22 Vdd=5V O 44 ++- 284550 CCC li 20 Vdd=5V 40 Amp Psat (dBm) 1168 Vdd=3V S IP3 (dBm) 36 32 14 +25 C +85 C 12 -40 C 28 B Vdd=3V 10 24 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) O Output IP3 and Idd vs. Output IP3 and Idd vs. Supply Voltage @ 700 MHz [3] Supply Voltage @ 900 MHz [3] 40 140 40 140 38 120 38 120 36 100 36 100 P3 (dBm) 3324 6800Idd (mA P3 (dBm) 3324 6800 Idd (mA I ) I ) 30 40 30 40 28 20 28 20 26 0 26 0 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K [4] measurement reference plane shown on evaluation pCB drawing. InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Power Compression @ 700 MHz [1] Power Compression @ 700 MHz [2] 50 50 T E (%) 40 E (%) 40 m A A AIN (dB), P 2300 PGPoAauiEnt AIN (dB), P 2300 PGPoAauiEnt E e - s G G Bm), 10 Bm), 10 s out (d 0 out (d 0 T oi P P N -10 -10 w -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 -18 -16 E-14 -12 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) INPUT POWER (dBm) o l - L s Power Compression @ 900 MHz [1] Power Compression @ 900 MHz [2] r 50 50 e %) O %) i E ( 40 E ( 40 f A A i dB), P 30 PGPoAauiEnt dB), P 30 PGPoAauiEnt pl AIN ( 20 S AIN ( 20 m G G m), 10 m), 10 A B B d d ut ( ut ( o 0 o 0 P P B -10 -10 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) INPUT POWER (dBm) O Gain, Power & Noise Figure Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz [3] vs. Supply Voltage @ 900 MHz [3] 24 1.2 24 1 GAIN 1 m) P1dB m) 22 GP1AdINB 0.8 & P1dB (dB 20 00..68 NOISE FIG & P1dB (dB 20 0.6 NOISE FIG AIN (dB) 0.4 URE (dB AIN (dB) 18 0.4 URE (dB G 16 ) G 16 0.2 ) Noise Figure 0.2 Noise Figure 0 14 0 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Output IP3 vs. Rbias @ 700 MHz Gain, Noise Figure & Rbias @ 700 MHz 40 19 1.2 T 38 m 18 1 36 s N 34 17 0.8O oise - IP3 (dBm) 22336802 VVdddd==35VV GAIN (dB) 1156 VVddTdd==53VV E 00..46ISE FIGURE (dB) 14 0.2 N 24 22 13 0 w 500 1000 10000 500 10E00 10000 o Rbias (Ohms) Rbias(Ohms) l - L s Output IP3 vs. Rbias @ 900 MHz Gain, Noise Figure & Rbias @ 900 MHz r e 40 17 1 i 38 O f 36 16 0.8 i l N 34 O Amp IP3 (dBm) 233802 VVdddd==35VV S GAIN (dB) 1145 VVdddd==53VV 00..46ISE FIGURE (d B 26 13 0.2) 24 B 22 12 0 500 1000 10000 500 1000 10000 Rbias (Ohms) Rbias(Ohms) O Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd rbias Vdd (V) idd (mA) min max recommended 2.7k 24 3.92k 30 3V 1K [1] open Circuit 4.7k 33 10k 40 820 65 2k 78 5V 0 open Circuit 3.92k 88 10k 90 [1] with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended. InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC617LP3 / 617LP3E v00.0807 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Typical Supply Absolute Maximum Ratings Current vs. Vdd (Rbias = 3.92k) Drain Bias Voltage (Vdd) +6V Vdd (V) idd (mA) T rf input power (rfiN) 2.7 18 +10 dBm m (Vdd = +5 Vdc) 3.0 30 s Channel Temperature 150 °C 3.3 41 E Continuous pdiss (T= 85 °C) - (derate 8.33 mw/°C above 85 °C) 0.54 w 4.5 77 e 5.0 88 Thermal resistance s 120 °C/w (channel to ground paddle) 5.5 97 T oi storage Temperature -65 to +150 °C Note: Amplifier will operate over full voltage ranges shown above. N operating Temperature -40 to +85 °C w E eleCTrosTATiC seNsiTiVe DeViCe o oBserVe HANDliNG preCAUTioNs l - L Outline Drawing s r e O i f i l p m S A B O NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number package Body material lead finish msl rating package marking [3] HmC617lp3 low stress injection molded plastic sn/pb solder msl1 [1] 617 XXXX HmC617lp3e roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 617 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Pin Descriptions pin Number function Description interface schematic T 1, 3 - 5, 7, 9, No connection required. These pins may be connected to rf/ m N/C 10, 12 - 14, 16 DC ground without affecting performance. s E - 2 rfiN This pin is matched to 50 ohms. e s oi T This pin and ground paddle must 6 GND N be connected to rf./DC ground. w E o 11 rfoUT This pin is matched to 50 ohms. l - L s This pin is used to set the DC current of the amplifier by r 8 res selection of external bias resistor. see application circuit. e O i f i l p power supply Voltage. Choke inductor and bypass capacitors 15 Vdd m are required. see application circuit. S A Application Circuit B O InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 - 7 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicPaayht ioroens nuolret of:rto hm9er 7wits8is ue-s 2eu.n5 dS0epre- ca3infi3yc ap4tiao3tne sn ts ou rb Fjpeaactte xtno:t cr9higa7hnt8gs e-o 2wf Ai5thn0oaulo-t g3n oD3tiec7vei3.c eN s o. OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D

HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Evaluation PCB T m s E - e s T oi N w E o l - L s r e O i f i l p m S A B O List of Materials for Evaluation PCB 118357 [1] The circuit board used in this application should use item Description rf circuit design techniques. signal lines should J1, J2 pCB mount smA rf Connector have 50 ohm impedance while the package ground J3, J4 DC pin leads and exposed paddle should be connected C1 10nf Capacitor, 0402 pkg. directly to the ground plane similar to that shown. C2 1000 pf Capacitor, 0603 pkg. A sufficient number of via holes should be used to C3 0.47µf Capacitor, 0603 pkg. connect the top and bottom ground planes. The l1 18 nH, inductor, 0603 pkg. evaluation board should be mounted to an appro- l2 15 nH, inductor, 0402 pkg. priate heat sink. The evaluation circuit board shown r1 3.92K ohm resistor, 0402 pkg. is available from Hittite upon request. U1 HmC617lp3(e) Amplifier pCB [2] 112580 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350. InfoFrmoarti opn rfiucrneis,h edd eblyi vAenarlyog a Dnedvic etos isp blaelcieeve do trod beer asc:c uHraittet iatned Mreliiacbrleo. wHoawvevee r,C noo rpFoorra tpiroicne,, 2d0el iAvelrpyh, aan Rd otoa dpl,a cCeh oerldmerssf:o Arnda,l oMg AD e0v1ic8e2s4, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mPayh roesnulet f:ro m9 7its8 u-s2e.5 S0pe-c3ifi3ca4tio3n s s u bFjeact xto: c9ha7n8ge- 2wi5th0ou-t 3no3tic7e3. N o OPrhdoneer: O78n1--3li2n9e- 4a7t0 0w (cid:127)w Owrd.ehri totnitlein.ec aot mwww.analog.com 7 - 8 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks aArep thpe lpircopaetrityo onf thSeiur rpesppeoctrivte: oPwhneorsn.e: 978-250-33A4p3p l icoart i oanp Spusp@pohrti:t Ptihteo.nceo: 1m-800-ANALOG-D