HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Typical Applications Features The HmC616lp3(e) is ideal for: low Noise figure: 0.5 dB T m • Cellular/3G and lTe/wimAX/4G High Gain: 24 dB s • BTs & infrastructure High output ip3: +37 dBm - • repeaters and femtocells single supply: +3V to +5V e • public safety radio s 50 ohm matched input/output i • DAB receivers o 16 lead 3x3mm QfN package: 9 mm2 N w Functional Diagram General Description o The HmC616lp3(e) is a GaAs pHemT mmiC l low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers - operating between 175 and 660 mHz. The amplifier s has been optimized to provide 0.5 dB noise figure, r 24 dB gain and +37 dBm output ip3 from a single e supply of +5V. input and output return losses are i f excellent with minimal external matching and bias i l decoupling components. The HmC616lp3(e) shares p the same package and pinout with the HmC617- m lp3(e) and HmC618lp3(e) lNAs. The HmC616lp3(e) A can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. The HmC616lp3(e) offers improved noise figure versus the previously released HmC356lp3(e). Electrical Specifications, T = +25° C, Rbias = 3.92k Ohms* A Vdd = +3V Vdd = +5V parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. frequency range 175 - 230 230 - 660 175 - 230 230 - 660 mHz Gain 20 22.5 15 20 21 24 15 21 dB Gain Variation over Temperature 0.002 0.005 dB/ °C Noise figure 0.5 0.8 0.5 0.8 0.5 0.8 0.5 0.8 dB input return loss 10 16 12 14 dB output return loss 9 10 9 10 dB output power for 1 dB 8 11 10 15 11 15 14 19 dBm Compression (p1dB) saturated output power (psat) 8.5 13 11 15.5 12.5 17.5 15.5 19.5 dBm output Third order intercept (ip3) 20 30 32 37 dBm supply Current (idd) 30 45 30 45 90 115 90 115 mA * rbias resistor sets current, see application circuit herein For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 1 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Broadband Gain & Return Loss Gain vs. Temperature [1] 25 24 T 20 S21 m 15 22 B) 10 Vdd= 5V s SPONSE (d -505 Vdd= 3V S22 GAIN (dB) 1280 ++2855CC se - E - 40C R-10 i o -15 16 N -20 S11 -25 14 w 0.2 0.4 0.6 0.8 1 1.2 1.4 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) FREQUENCY (GHz) o l - s Gain vs. Temperature [2] Input Return Loss vs. Temperature [1] r 24 0 e i f 22 +25C dB) -5 +- 8450CC li B) 20 SS ( p GAIN (d 18 ++2855CC URN LO-10 Am - 40C T E R -15 16 14 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) FREQUENCY (GHz) Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 0 -5 S (dB) -5 ++- 284550CCC TION (dB)--1150 ++- 284550CCC S A O L L-10 O-20 RETURN -15 VERSE IS--3205 E R -35 -20 -40 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) FREQUENCY (GHz) [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Noise Figure vs. Temperature [1] P1dB vs. Temperature 1 24 T m 0.9 Vdd=5V 22 Vdd=3V s B)0.8 20 d E (0.7 +85C m) Vdd=5V se - OISE FIGUR00..56 P1dB (dB 1168 Vdd=3V oi N0.4 +25 C 14 +25 C +85 C N 0.3 12 - 40 C -40C w 0.2 10 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 o FREQUENCY (GHz) FREQUENCY (GHz) l - s Psat vs. Temperature Output IP3 vs. Temperature r e 24 Vdd=5V 40 i 22 f i l 20 Vdd=5V 36 Amp Psat (dBm) 1168 Vdd=3V IP3 (dBm) 32 14 12 ++- 284550 CCC 28 Vdd=3V ++- 284550 CCC 24 10 0.2 0.3 0.4 0.5 0.6 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 and Supply Current vs. Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz Supply Voltage @ 500 MHz 40 140 40 140 38 120 38 120 36 100 36 100 3 (dBm) 3324 6800Idd (m 3 (dBm) 3324 6800Idd (m P A P A I ) I ) 30 40 30 40 28 20 28 20 26 0 26 0 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) [1] measurement reference plane shown on evaluation pCB drawing. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 3 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Power Compression @ 400 MHz [1] Power Compression @ 400 MHz [2] 45 45 T %) 40 Pout %) 40 Pout m E ( 35 GPAaiEn E ( 35 GPAaiEn PA PA s B), 30 B), 30 N (d 25 N (d 25 - AI AI e G 20 G 20 m), 15 m), 15 s ut (dB 10 ut (dB 10 oi o o P 5 P 5 N 0 0 w -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -18 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) INPUT POWER (dBm) o l - s Power Compression @ 500 MHz [1] Power Compression @ 500 MHz [2] r 45 45 e %) 40 Pout %) 40 Pout i AE ( 35 GPAaiEn AE ( 35 GPAaiEn if P P l B), 30 B), 30 p d d N ( 25 N ( 25 m AI AI G 20 G 20 m), 15 m), 15 A B B d d ut ( 10 ut ( 10 o o P 5 P 5 0 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) INPUT POWER (dBm) Gain, Power & Noise Figure Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz vs. Supply Voltage @ 500 MHz 24 1 24 1 GAIN GAIN m) 22 P1dB 0.8 m) 22 P1dB 0.8 P1dB (dB 20 0.6 NOISE F P1dB (dB 20 0.6 NOISE F & IG & IG AIN (dB) 18 0.4 URE (dB AIN (dB) 18 0.4 URE (dB G 16 0.2 ) G 16 0.2 ) Noise Figure Noise Figure 14 0 14 0 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 4 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Gain Low Frequency Tune [1] Input Return Loss Low Frequency Tune [1] 26 0 T m 24 -5 s B) se - GAIN (dB) 2202 VVdddd==35VV URN LOSS (d--1150 i 18 RET o -20 Vdd=5V 16 Vdd=3V N w 14 -25 0.15 0.175 0.2 0.225 0.25 0.15 0.175 0.2 0.225 0.25 o FREQUENCY (GHz) FREQUENCY (GHz) l - s Output Return Loss Low Frequency Tune [1] P1dB Low Frequency Tune [1] r 0 22 e i 20 f -5 li dB) 18 V vdddd==53VV mp N LOSS (-10 B (dBm) 16 A TUR-15 P1d 14 E R 12 -20 Vdd=5V Vdd=3V 10 -25 8 0.15 0.175 0.2 0.225 0.25 0.15 0.175 0.2 0.225 0.25 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 Low Frequency Tune [1] Noise Figure Low Frequency Tune [1] [2] 40 1 0.9 36 Vdd=5V Vdd=3V B)0.8 VVdddd==53VV m) 32 RE (d0.7 B U 3 (d 28 FIG0.6 IP SE 0.5 24 OI N0.4 20 0.3 16 0.2 0.15 0.175 0.2 0.225 0.25 0.15 0.175 0.2 0.225 0.25 FREQUENCY (GHz) FREQUENCY (GHz) [1] rbias = 2kΩ, l1 = 82 nH, l2 = 82 nH [2] measurement reference plane shown on evaluation pCB drawing. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 5 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Output IP3 vs. Rbias @ 400 MHz Gain, Noise Figure & Rbias @ 400 MHz 40 24 1 T 38 23 0.9 m 36 22 0.8 s N 34 O IP3 (dBm) 233802 GAIN (dB) 122901 000...567ISE FIGURE (d ise - 26 18 0.4B) o Vdd= 3V Vdd=5V 24 Vdd= 5V 17 Vdd=3V 0.3 N 22 16 0.2 w 500 1000 10000 500 1000 10000 Rbias (Ohms) Rbias(Ohms) o l - s Output IP3 vs. Rbias @ 500 MHz Gain, Noise Figure & Rbias @ 500 MHz r 40 21 0.7 e 38 i f 36 20 0.6 i N l 34 O IP3 (dBm) 233802 GAIN (dB) 1189 00..45ISE FIGURE (d Amp B 26 17 Vdd=5V 0.3) 24 VVdddd== 35VV Vdd=3V 22 16 0.2 500 1000 10000 500 1000 10000 Rbias (Ohms) Rbias(Ohms) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 6 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd rbias (Ω) T Vdd (V) idd (mA) m min max recommended 2.7k 27 s 3.92k 31 - 3V 1k [1] open Circuit 4.7k 33 e 10k 39 s 820 73 i o 2k 84 N 5V 0 open Circuit 3.92k 91 w 10k 95 [1] with Vdd = 3V, rbias < 1k ohm is not recommended and may result in the lNA becoming conditionally stable. o l - Typical Supply s Absolute Maximum Ratings Current vs. Vdd (Rbias = 3.92kΩ) r e Drain Bias Voltage (Vdd) +6 V Vdd (V) idd (mA) i rf input power (rfiN) 2.7 20 f +10 dBm (Vdd = +5 Vdc) i 3.0 30 l Channel Temperature 150 °C 3.3 40 p Continuous pdiss (T= 85 °C) m (derate 8.93 mw/°C above 85 °C) 0.58 w 4.5 80 5.0 90 A Thermal resistance 112 °C/w (channel to ground paddle) 5.5 100 storage Temperature -65 to +150 °C Note: Amplifier will operate over full voltage range shown above. operating Temperature -40 to +85 °C eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 7 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Outline Drawing T m s - e s i o N w o l - s r e i f NoTes: i l 1. leADfrAme mATeriAl: Copper AlloY p 2. DimeNsioNs Are iN iNCHes [millimeTers] m 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. A pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number package Body material lead finish msl rating package marking [3] HmC616lp3 low stress injection molded plastic sn/pb solder msl1 [1] 616 XXXX HmC616lp3e roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 616 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 8 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Pin Descriptions pin Number function Description interface schematic T m 1, 3 - 5, 7, 9, N/C No connection required. These pins may be connected 10, 12 - 14, 16 to rf/DC ground without affecting performance. s This pin is DC coupled. DC blocking capacitor 2 rfiN required. see application circuit. - e This pin and ground paddle must 6 GND s be connected to rf/DC ground. i o N 11 rfoUT This pin is matched to 50 ohms. w o l This pin is used to set the DC current of the amplifier by - 8 res selection of external bias resistor. see application circuit. s r e i f power supply Voltage. Choke inductor and bypass capacitors 15 Vdd are required. see application circuit. i l p m A Application Circuit Components for Selected Frequencies Tuned frequency 175 - 230 mHz 230 - 660 mHz rbias 2.0k ohms 3.92k ohms l1 82 nH 47 nH l2 82 nH 51 nH For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 9 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 7 Evaluation PCB T m s - e s i o N w o l - s r e i f i l p m A List of Materials for Evaluation PCB 120728 [1] The circuit board used in this application should use item Description rf circuit design techniques. signal lines should J1, J2 pCB mount smA rf Connector have 50 ohm impedance while the package ground J3, J4 DC pin leads and exposed paddle should be connected C1 10nf Capacitor, 0402 pkg. directly to the ground plane similar to that shown. C2 1000 pf Capacitor, 0603 pkg. A sufficient number of via holes should be used to C3 0.47 µf Capacitor, 0603 pkg. connect the top and bottom ground planes. The C4 100 pf Capacitor, 0402 pkg. evaluation board should be mounted to an appro- l1 47 nH inductor, 0603 pkg. priate heat sink. The evaluation circuit board shown l2 51 nH inductor, 0402 pkg. is available from Hittite upon request. r1 (rbias) 3.92 kΩ resistor, 0402 pkg. U1 HmC616lp3(e) Amplifier pCB [2] 120616 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 10 Application Support: Phone: 978-250-3343 or apps@hittite.com