HMC597LP4 / 597LP4E v07.1213 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features the HmC597lP4 / HmC597lP4e is suitable for High linearity: +23 dBm IIP3 & +60 dBm IIP2 t various modulation systems: low Noise Figure: 15 dB m • Cellular/PCs/3G High Integration: on-Chip rF Balun s • Base stations & repeaters E - • Gsm/GPrs, WCDma & tD-sCDma s • WimaX, WiBro & Fixed Wireless General Description r T o the HmC597lP4(e) are highly integrated siGe t Functional Diagram wideband direct conversion I/Q Demodulator rFICs a which are ideal for high dynamic range receivers l operating fromE 100 - 4000 mHz in cellular and u broadband wireless infrastructure applications. D Providing a very high level of integration compared o withL discrete solutions, the HmC597lP4(e) features m an on-chip rF balun which allows for singled ended rF e input. an off-chip capacitor allows the reconfiguration D O of the rF port to operate over the whole 100 - 4000 mHz band without additional off-chip components. also ideal for software radio and other multi-band receivers, the HmC597lP4(e) demodulator is housed S in a compact 4 x 4 mm smt QFN package and delivers exceptionally high dynamic range. the lo requires -6 to +6 dBm and can be driven in single-ended mode. the I and Q output ports are differential with an output B impedance of 400 ohms, allowing direct connection to channel filters and aDCs. this device is optimized for a supply voltage of +4.5V to +5.5V and consumes 200 O ma @ +5V supply. Electrical Specifications, See Test Conditions on following page herein. Parameter min. typ. max. units rF Input Frequency (Direct lo) 0.1 - 4.0 GHz Input P1dB 12 dBm ssB Noise Figure 15 dB Input IP3 +20 +23 +26 dBm Input IP2 +60 dBm Conversion Gain -5 -3.5 -2 dB I/Q Gain mismatch 0.1 0.25 dB lo to rF leakage @ +3 dBm lo -66 dBm IF Port Bandwidth 600 mHz IF output Impedance (Diff.) 400 ohms lo Input Power -6 to +6 dBm lo/rF return loss 12/12 dB total supply Current 200 230 ma [1] Data taken at 1970 mHz rF Input frequency for two tone test, fundamental frequencies are 1970 mHz and 1971 mHz. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 1 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC597LP4 / 597LP4E v07.1213 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz DC Test Conditions [1] AC Test Conditions [1] Parameter Condition Parameter Condition supply 200 ma @ +5V rF Input Frequency 1970 mHz t Vcclo [2] 124 ma @ +2.8V rF Input Frequency for IIP3 1970 & 1971 mHz m QN, QP, IN, IP [2] 76 ma @ +3.5V rF Input Power for IIP3 0 dBm per toEne s [1] unless otherwise specified, the following test conditions were lo Frequency 1960 mHz - used. Please refer to the HmC597lP4(e) application schematic. lo Input Power 0 dBm single ended through loP s [2] Voltages at these pins are supplied through bias resistors from r Vsupply, 5V (see application circuit). Power dissipation on chip is T 124 x 2.8 + 76 x 3.5 = 613.2 mW. o thermal rise calculations should be based on this power t dissipation level. a E l u D o L P1dB, Noise Figure, Gain vs. Frequency [1] Input IP3 vs. Frequency [1] m e 30 40 D O B) 25 C26= 0pF 35 d C26= 6.8pF N ( 20 C26= 0.9pF 30 GAI NF m) & 15 B 25 1dB (dBm) 150 P1dB S PUT IP3 (d 1250 P N B), 0 I 10 C26= 0pF NF (d -5 GAIN B 5 CC2266== 60..89ppFF -10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 RF FREQUENCY (GHz) RF FREQUENCY (GHz) O RF Return Loss vs. Frequency LO & Return Loss vs. Frequency 0 0 C26=0pF OSS (dB) -5 SS (dB) -5 N L LO-10 R C26=6.8pF N U R F RET-10 RETU-15 R C26=0.9pF -15 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 RF FREQUENCY (GHz) RF FREQUENCY (GHz) [1] IF Frequency= 10 mHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC597LP4 / 597LP4E v07.1213 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Noise Figure, P1dB, LO - RF Isolation vs. Frequency Gain @ 900 MHz vs. LO Power [1] 0 25 t B) 20 NF m dB)-20 AIN (d 15 s TION (-40 m) & G 10 P1dB E - A B s SOL-60 B (d 5 or LO-RF I-80 dB), P1d 0 T F ( -5 t N GAIN a -100 -10 l 0 0.5 1 1.5 2 2.5 3 3.5 4 -9 -6 E-3 0 3 6 9 u RF FREQUENCY (GHz) LO POWER (dBm) D o Noise Figure, P1dB, NoiLse Figure, P1dB, m Gain @ 1970 MHz vs. LO Power [1] Gain @ 3500 MHz vs. LO Power [1] e 25 25 D B) 20 O B) 20 NF N (d NF N (d AI 15 AI 15 G G & & m) 10 P1dB m) 10 P1dB dB S dB B ( 5 B ( 5 d d 1 1 B), P 0 B), P 0 d d NF ( -5 GAIN B NF ( -5 GAIN -10 -10 -9 -6 -3 0 3 6 9 -9 -6 -3 0 3 6 9 LO POWER (dBm) LO POWER (dBm) O [1] IF Frequency = 10 mHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 3 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC597LP4 / 597LP4E v07.1213 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Absolute Maximum Ratings Vcc1, Vcc2 +6V eleCtrostatIC seNsItIVe DeVICe lo Input Power +12 dBm t oBserVe HaNDlING PreCautIoNs Channel temperature 150 °C m thermal resistance (rth) 8.9 °C/W E s (channel to ground paddle) - storage temperature -65 to +150 °C s operating temperature -40 to +85 °C r esD sensitivity (HBm) Class 1B T o t a E l u D o L m Outline Drawing e D O S B O Notes: 1. leaDFrame materIal: CoPPer alloY 2. DImeNsIoNs are IN INCHes [mIllImeters]. 3. leaD sPaCING toleraNCe Is NoN-CumulatIVe 4. PaD Burr leNGtH sHall Be 0.15 mm maXImum. PaD Burr HeIGHt sHall Be 0.05 mm maXImum. 5. PaCKaGe WarP sHall Not eXCeeD 0.05 mm. 6. all GrouND leaDs aND GrouND PaDDle must Be solDereD to PCB rF GrouND. 7. reFer to HIttIte aPPlICatIoN Note For suGGesteD PCB laND PatterN. Package Information Part Number Package Body material lead Finish msl rating Package marking [3] HmC597lP4 low stress Injection molded Plastic sn / Pb solder msl1 [1] H597 XXXX HmC597lP4e roHs-compliant low stress Injection molded Plastic 100% matte sn msl1 [2] H597 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC597LP4 / 597LP4E v07.1213 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Pin Descriptions Pin Number Function Description Interface schematic t m supply for lo amplifier. s 1 Vcclo E typically draws 124ma @ 2.8V. - s r 2, 5, 8, 11, these pins and the ground paddle should be T o 12, 14, 17, 19, GND connected to a high quality rF/DC ground. 20, 23 t a l E u 3 loP lo input. Need a DC decoupling capacitor. typically at 1.5 - 1.8 VDC. D o L m e this pin should be aC grounded. D 4 loN also can be used to optimize the IP2 performancOes 6, 7, 24 N/C Not Connected S B 9, 10 QN, QP Differential baseband outputs. 400 ohms differential output impedance. 21, 22 IP, IN each port should draw 38 ma @ 3.5V. O 12, 19 VccQ, VccI Decoupling for the Q and I mixer stages. Center tap of the rF transformer. should be 13, 18 CtrFQ, CtrFI connected to a high quality rF/DC ground. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 5 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC597LP4 / 597LP4E v07.1213 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Pin Descriptions (Continued) Pin Number Function Description Interface schematic t 15 rFN rF Input. m E s Can be DC or rF grounded. this pin is used to - 16 rFP match the rF port over the desired frequency range. also can be used to drive the rF port s differentially if needed. r T o t a E l u D o L m e D O S B O For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC597LP4 / 597LP4E v07.1213 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Evaluation PCB t m s E - s r T o t a l E u D o L m e D O S B Evaluation PCB 115775 [1][2] O the circuit board used in the final application should Item Description use rF circuit design techniques. signal lines J1 - J6 PCB mount sma Connector should have 50 ohm impedance while the package J7, J8 2 mm DC Header ground leads and exposed paddle should be con- C11, C20 - C24 1000 pF Capacitor, 0402 Pkg. nected directly to the ground plane similar to that C12 100 pF Capacitor, 0402 Pkg. shown. a sufficient number of via holes should be C25 0.3 pF Capacitor, 0402 Pkg. used to connect the top and bottom ground planes. C26 0.9 pF Capacitor, 0402 Pkg. the evaluation circuit board shown is available from C30 - C32 0.1 µF Capacitor, 0805 Pkg. Hittite upon request. r3, r4 39.2 ohm resistor, 0402 Pkg. r5 18.2 ohm resistor, 0402 Pkg. l1 - l4 5.6 nH Inductor, 0402 Pkg. t1, t2 2 - 800 mHz Balun HmC597lP3 / HmC597lP3e u1 Direct Demodulator PCB [2] 116265 evaluation PCB [1] reference this number when ordering complete evaluation PCB [2] Circuit Board material: rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 7 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC597LP4 / 597LP4E v07.1213 SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Application & Evaluation PCB Schematic t m E s - s r T o t a E l u D o L m e D O S B O * short to ground for single ended mode. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 Application Support: Phone: 978-250-3343 or apps@hittite.com