HMC478SC70 478SC70E / v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Typical Applications Features 8 The HMC478SC70(E) is an ideal for: P1dB Output Power: +17 dBm • Cellular / PCS / 3G Gain: 23 dB • WiBro / WiMAX / 4G Output IP3: +31 dBm T • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os m • CATV, Cable Modem & DBS Single Supply: +5V to +8V s • Microwave Radio & Test Equipment Industry Standard SC70 Package - k c Functional Diagram General Description o The HMC478SC70(E) is a SiGe Heterojunction l B Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4 GHz. This industry n standard SC70 packaged amplifier can be used as i A a cascadable 50 Ohm RF/IF gain stage as well as G a LO or PA driver with up to +17 dBm output power. & The HMC478SC70(E) offers 23 dB of gain with a +31 dBm output IP3 at 850 MHz while requiring only r 62 mA from a single positive supply. The Darlington e topology results in reduced sensitivity to normal v i process variations and excellent gain stability over r temperature while requiring a minimal number of D external bias components. - s r Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, T = +25° C e A fi Parameter Min. Typ. Max. Units i DC - 1.0 GHz 20 24 dB l 1.0 - 2.0 GHz 16 20 dB p Gain 2.0 - 3.0 GHz 13 17 dB m 3.0 - 4.0 GHz 11 15 dB A Gain Variation Over Temperature DC - 4 GHz 0.015 0.02 dB/ °C DC - 3.0 GHz 15 dB Input Return Loss 3.0 - 4.0 GHz 17 dB DC - 3.0 GHz 15 dB Output Return Loss 3.0 - 4.0 GHz 13 dB Reverse Isolation DC - 4 GHz 20 dB 0.5 - 2.0 GHz 13 16 dBm Output Power for 1 dB Compression (P1dB) 2.0 - 3.0 GHz 11 15 dBm 3.0 - 4.0 GHz 9 12 dBm 0.5 - 2.0 GHz 31 dBm Output Third Order Intercept (IP3) 2.0 - 3.0 GHz 28 dBm (Pout= 0 dBm per tone, 1 MHz spacing) 3.0 - 4.0 GHz 25 dBm DC - 3.0 GHz 2.5 dB Noise Figure 3.0 - 4.0 GHz 2.8 dB Supply Current (Icq) 62 82 mA Information Ffuornris hperdi cbye ,A ndaleogli vDeevricye sa ins dbe ltioev epd lato cbee aocrcdureatres a:n dA rnelaialboleg. HDoweevveicr, enos , IFnocr .,p r2ic0e ,A dleplhivaer yR, oaandd ,t oC phlaeclem osrfdoerrds:, AMnAal o0g1 D8e2v4ices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Broadband Gain & Return Loss Gain vs. Temperature 8 30 30 20 25 B) 10 20 d T NSE ( 0 SS2111 N (dB) 15 m SPO S22 GAI s RE-10 10 ++2855CC -40C - -20 5 k c -30 0 o 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 l FREQUENCY (GHz) FREQUENCY (GHz) B n i Input Return Loss vs. Temperature Output Return Loss vs. Temperature A G 0 0 & -5 -5 S21 SS (dB)-10 SS1212 SS (dB)-10 ++-428055CCC er O O v N L-15 N L-15 i R R r U U ET-20 ET-20 D R R -25 -25 - s -30 -30 r 0 1 2 3 4 5 0 1 2 3 4 5 e FREQUENCY (GHz) FREQUENCY (GHz) i f i l p Reverse Isolation vs. Temperature Noise Figure vs. Temperature m 0 10 A B) -5 8 d ATION (-10 ++-428055CCC RE (dB) 6 ++2855CC L U -40C O-15 G E IS E FI 4 S S VER-20 NOI RE-25 2 -30 0 0 1 2 3 4 5 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) Information Ffuornris hperdi cbye ,A ndaleogli vDeevricye sa ins dbe ltioev epd lato cbee aocrcdureatres a:n dA rnelaialboleg. HDoweevveicr, enos , IFnocr .,p r2ic0e ,A dleplhivaer yR, oaandd ,t oC phlaeclem osrfdoerrds:, AMnAal o0g1 D8e2v4ices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com 8 - 2 Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz P1dB vs. Temperature Psat vs. Temperature 8 24 24 20 20 16 16 smT P1dB (dBm) 182 ++2855CC Psat (dBm) 182 ++2855CC - -40C -40C k 4 4 c o 0 0 0 1 2 3 4 5 0 1 2 3 4 5 l FREQUENCY (GHz) FREQUENCY (GHz) B n Gain, Power & Output IP3 vs. Supply i A Output IP3 vs. Temperature Voltage for Rs = 18 Ohms @ 850 MHz G 35 m) 34 & B 32 d er 30 Bm), IP3 ( 223680 v dBm) 25 sat (d 2224 Dri IP3 ( 20 ++-428055CCC dB (dBm), P 11124680 Gain s - 15 dB), P1 1102 PPIP1s3adtB r 10 n ( 8 ai e 0 1 2 3 4 5 G 4.75 5 5.25 i FREQUENCY (GHz) Vs (Vdc) f i l Icc vs. Vcc Over Temperature for p Fixed Vs= 5V, Rbias= 18 Ohms m 80 A 75 +85C 70 65 A) +25C m c ( 60 c I 55 -40C 50 45 40 3.60 3.70 3.80 3.90 4.00 4.10 4.20 Vcc (V) Information Ffuornris hperdi cbye ,A ndaleogli vDeevricye sa ins dbe ltioev epd lato cbee aocrcdureatres a:n dA rnelaialboleg. HDoweevveicr, enos , IFnocr .,p r2ic0e ,A dleplhivaer yR, oaandd ,t oC phlaeclem osrfdoerrds:, AMnAal o0g1 D8e2v4ices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Absolute Maximum Ratings 8 Collector Bias Voltage (Vcc) +6 Vdc ELECTROSTATIC SENSITIVE DEVICE Collector Bias Current (Icc) 100 mA OBSERVE HANDLING PRECAUTIONS RF Input Power (RFIN)(Vcc = +2.4 Vdc) +5 dBm Junction Temperature 150 °C T Continuous Pdiss (T = 85 °C) m 0.583 W (derate 9 mW/°C above 85 °C) s Thermal Resistance 111.5 °C/W (junction to lead) - Storage Temperature -65 to +150 °C k c Operating Temperature -40 to +85 °C o ESD Sensitivity (HBM) Class 1C l B n Outline Drawing i A G & r e v i r D - s r e i f NOTES: i l 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED p PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY m 3. LEAD PLATING: Sn/Pb A 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking HMC478SC70 Low Stress Injection Molded Plastic Sn/Pb MSL1 [1] 478E HMC478SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 478E [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C Information Ffuornris hperdi cbye ,A ndaleogli vDeevricye sa ins dbe ltioev epd lato cbee aocrcdureatres a:n dA rnelaialboleg. HDoweevveicr, enos , IFnocr .,p r2ic0e ,A dleplhivaer yR, oaandd ,t oC phlaeclem osrfdoerrds:, AMnAal o0g1 D8e2v4ices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com 8 - 4 Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Pin Descriptions 8 Pin Number Function Description Interface Schematic 1, 2, 4, 5 GND These pins must be connected to RF/DC ground. T m This pin is DC coupled. 3 RFIN s An off chip DC blocking capacitor is required. - k c 6 RFOUT RF output and DC Bias (Vcc) for the output stage. o l B n i A Application Circuit G & r e v i r D - s r e i f i l p m Recommended Bias Resistor Values A for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V Note: 1. External blocking capacitors are required on Rbias Value 18 Ω 35 Ω 67 Ω RFIN and RFOUT. Rbias Power rating 1/8 W 1/4 W 1/2 W 2. Rbias provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 900 1900 2200 2400 3500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF Information Ffuornris hperdi cbye ,A ndaleogli vDeevricye sa ins dbe ltioev epd lato cbee aocrcdureatres a:n dA rnelaialboleg. HDoweevveicr, enos , IFnocr .,p r2ic0e ,A dleplhivaer yR, oaandd ,t oC phlaeclem osrfdoerrds:, AMnAal o0g1 D8e2v4ices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Evaluation PCB 8 T m s - k c o l B n i A G & r e v i r D - s r e i f i l List of Materials for Evaluation PCB 118039 [1] p m The circuit board used in the application should use Item Description A RF circuit design techniques. Signal lines should J1 - J2 PCB Mount SMA Connector have 50 Ohm impedance while the package ground J3 - J4 DC Pin leads should be connected directly to the ground C1 - C3 100 pF Capacitor, 0402 Pkg. plane similar to that shown. A sufficient number C4 1000 pF Capacitor, 0603 Pkg. of via holes should be used to connect the top C5 2.2 µF Capacitor, Tantalum and bottom ground planes. The evaluation board R1 18 Ohm Resistor, 1210 Pkg. should be mounted to an appropriate heat sink. The L1 18 nH Inductor, 0603 Pkg. evaluation circuit board shown is available from U1 HMC478SC70(E) Hittite upon request. PCB [2] 117360 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 Information Ffuornris hperdi cbye ,A ndaleogli vDeevricye sa ins dbe ltioev epd lato cbee aocrcdureatres a:n dA rnelaialboleg. HDoweevveicr, enos , IFnocr .,p r2ic0e ,A dleplhivaer yR, oaandd ,t oC phlaeclem osrfdoerrds:, AMnAal o0g1 D8e2v4ices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com 8 - 6 Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D