HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462LP5 / HMC462LP5E Wideband LNA is Noise Figure: 2.5 dB @ 10 GHz T ideal for: Gain: 13 dB M • Telecom Infrastructure P1dB Output Power: +14.5 dBm @ 10 GHz S • Microwave Radio & VSAT Self-Biased: +5V @ 66mA - • Military EW, ECM & C3I E 50 Ohm Matched Input/Output S • Test Instrumentation 25 mm2 Leadless SMT Package I O • Fiber Optics N Functional Diagram General Description W The HMC462LP5 & HMC462LP5E are GaAs MMIC O pHEMT Low Noise Distributed Amplifiers in leadless L 5x5 mm surface mount packages which operate - between 2 and 20 GHz. The self-biased amplifier S provides 13 dB of gain, 2.5 to 3.5 dB noise figure and R +14.5 dBm of output power at 1 dB gain compression E while requiring only 66 mA from a single +5V supply. I F Gain flatness is excellent from 6 - 18 GHz making I L the HMC462LP5 & HMC462LP5E ideal for EW, P ECM RADAR and test equipment applications. The M wideband amplifier I/Os are internally matched to 50 A Ohms and are internally DC blocked. Electrical Specifications, T = +25° C, Vdd= 5V A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 6 6 - 14 14 - 20 GHz Gain 12 14 11 13 10 12 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.015 0.025 0.02 0.03 0.03 0.04 dB/ °C Noise Figure 3.0 4.0 2.5 4.0 4.0 6.0 dB Input Return Loss 15 13 11 dB Output Return Loss 12 12 8 dB Output Power for 1 dB Compression (P1dB) 12 15 11 14 9 12 dBm Saturated Output Power (Psat) 17 16 15 dBm Output Third Order Intercept (IP3) 26 25 22 dBm Supply Current 41 66 84 41 66 84 41 66 84 mA (Idd) (Vdd= 5V) InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC462LP5 / 462LP5E v05.0213 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Gain & Return Loss Gain vs. Temperature 20 20 15 T 10 16 M B) 5 d SPONSE (-1-050 GAIN (dB) 182 - S RE-15 E S -20 4 -25 OI -30 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 N FREQUENCY (GHz) FREQUENCY (GHz) W S21 S11 S22 +25 C +85 C -40 C O L - Input Return Loss vs. Temperature Output Return Loss vs. Temperature S 0 0 R E S (dB) -5 SS (dB) -5 FI S-10 O O L I N L RN L UR-15 TU-10 P T E T RE-20 UT R M PU TP-15 A N U I-25 O -30 -20 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) +25 C +85 C -40 C +25 C +85 C -40 C Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 B)-10 8 d ATION (-20 RE (dB) 6 L U SE ISO-30 SE FIG 4 VER-40 NOI RE-50 2 -60 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -40C +25 C +85 C -40 C InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC462LP5 / 462LP5E v05.0213 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz P1dB vs. Temperature Psat vs. Temperature 20 20 T 17 17 M E - S P1dB (dBm) 1114 Psat (dBm) 1114 S 8 8 I O 5 5 N 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) W +25 C +85 C -40 C +25 C +85 C -40 C O L Gain, Power, Noise Figure & Supply - Output IP3 vs. Temperature Current vs. Supply Voltage @ 10 GHz S R 30 B) 22 72 E e (d 20 70 I 27 gur 18 68 F e Fi 16 66 LI m) 24 Nois 14 64 MP IP3 (dB 21 B (dBm), 11802 566802 Idd (mA) d A 18 dB), P1 46 5546 N ( 2 52 15 GAI 0 50 0 2 4 6 8 10 12 14 16 18 20 22 4.5 5 5.5 FREQUENCY (GHz) Vdd (V) Gain P1dB Noise Figure +25 C +85 C -40 C Idd Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5 Vdc) +18 dBm +4.5 66 Channel Temperature 150 °C +5.0 67 Continuous Pdiss (T = 85 °C) +5.5 68 3.25 W (derate 50 mW/°C above 85 °C) +7.5 71 Thermal Resistance 52 °C/W +8.0 72 (channel to ground paddle) +8.5 73 Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC462LP5 / 462LP5E v05.0213 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Outline Drawing T M S - E S I O N W O L - S R E I F NOTES: LI 1. LEADFRAME MATERIAL: COPPER ALLOY P 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] M 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. A PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC462LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H462 XXXX HMC462LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H462 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Pin Descriptions Pin Number Function Description Interface Schematic T 1 - 4, 6 - 20, No connection. These pins may be connected to RF ground. M 22 - 29, 31, 32 N/C Performance will not be affected. S This pad is AC coupled 5 RFIN and matched to 50 Ohms. - This pad is AC coupled E 21 RFOUT and matched to 50 Ohms. S I O N W Power supply voltage for the amplifier. 30 Vdd External bypass capacitors are required. O L - S R E Ground Paddle GND Ground paddle must be connected to RF/DC ground. I F I L P M A InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC462LP5 / 462LP5E v05.0213 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Evaluation PCB T M S - E S I O N W O L - S R E I F I L P M A List of Materials for Evaluation PCB 108338 [1] The circuit board used in the application should use Item Description RF circuit design techniques. Signal lines should J1 - J2 PCB Mount SMA Connector have 50 Ohm impedance while the package ground J3 2 mm Molex Header leads and package bottom should be connected C1 100 pF Capacitor, 0402 Pkg. directly to the ground plane similar to that shown. C2 1000 pF Capacitor, 0603 Pkg. A sufficient number of via holes should be used C3 4.7 µF Capacitor, Tantalum to connect the top and bottom ground planes. U1 HMC462LP5 / HMC462LP5E The evaluation board should be mounted to an PCB [2] 109751 Evaluation PCB appropriate heat sink. The evaluation circuit board [1] Reference this number when ordering complete evaluation PCB shown is available from Hittite upon request. [2] Circuit Board Material: Rogers 4350 InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

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