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数量阶梯 | 香港交货 | 国内含税 |
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参数 | 数值 |
产品目录 | 射频/IF 和 RFID |
描述 | IC MMIC AMP HBT 1W SOT-89 |
产品分类 | RF 放大器 |
品牌 | Hittite Microwave Corporation |
数据手册 | 点击此处下载产品Datasheet |
产品图片 | |
P1dB | 31.5dBm |
产品型号 | HMC452ST89E |
RF类型 | 通用 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
供应商器件封装 | SOT-89 |
其它名称 | 1127-1395-6 |
包装 | Digi-Reel® |
噪声系数 | 6.5dB |
增益 | 9dB |
封装/外壳 | TO-243AA |
标准包装 | 1 |
测试频率 | 2.1GHz |
电压-电源 | 5V |
电流-电源 | 510mA |
频率 | 400MHz ~ 2.2GHz |
HMC452ST89 452ST89E / v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC452ST89 / HMC452ST89E is ideal for Output IP3: +49 dBm applications requiring a high dynamic range amplifi er: 21 dB Gain @ 400 MHz • GSM, GPRS & EDGE 9 dB Gain @ 2100 MHz • CDMA & W-CDMA 50% PAE @ +31 dBm Pout • CATV/Cable Modem 9 +25 dBm CDMA2000 Channel Power • Fixed Wireless @ -45 dBc ACP Included in the HMC-DK002 Designer’s Kit T M Functional Diagram General Description S The HMC452ST89 & HMC452ST89E are high - dynamic range GaAs InGaP HBT 1 Watt MMIC power R amplifi ers operating from 0.4 to 2.2 GHz and packaged E in industry standard SOT89 packages. Utilizing a W minimum number of external components and a single O +5V supply, the amplifi er output IP3 can be optimized P to +45 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The & high output IP3 and PAE make the HMC452ST89 & HMC452ST89E ideal power amplifi ers for Cellular/ R PCS/3G and Fixed Wireless applications. A E N I L - Electrical Specifi cations, T = +25°C, Vs= +5V [1] S A R Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units E Frequency Range 400 - 410 450 - 496 810 - 960 1710 - 1990 2010 - 2170 MHz I F Gain 19 21 18 20 13.5 15.5 7 9.5 7 9 dB I L Gain Variation Over dB / 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 P Temperature °C M Input Return Loss 22 16 13 13 20 dB A Output Return Loss 11 11 14 15 15 dB Output Power for 1dB 27 30 27 30 27.5 30.5 28 31 28.5 31.5 dBm Compression (P1dB) Saturated Output 30.5 30.5 31.5 31.5 32 dBm Power (Psat) Output Third Order 42 45 42 45 44 47 45 48 46 49 dBm Intercept (IP3) [2] Noise Figure 6.5 7 6.5 6.5 6.5 dB Supply Current (Icq) 510 510 510 510 510 mA [1] Specifi cations and data refl ect HMC452ST89 measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone input power of 0 dBm per tone, 1 MHz spacing. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 124 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 400 MHz Gain vs. Temperature @ 400 MHz 25 24 23 20 22 15 21 B) 20 RESPONSE (d 1050 SSS212112 GAIN (dB) 11116789 +25 C 9 -5 15 +85 C 14 -40 C -10 13 T -15 12 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.35 0.37 0.39 0.41 0.43 0.45 M FREQUENCY (GHz) FREQUENCY (GHz) S - Input Return Loss Output Return Loss R vs. Temperature @ 400 MHz vs. Temperature @ 400 MHz E W 0 0 -5 -2 O P B) -10 B) -4 +25 C d +25 C d +85 C S ( +85 C S ( -6 -40 C & S -15 -40 C S O O N L N L -8 R R -20 R U U -10 A T T RE -25 RE E -12 N -30 -14 I L -35 -16 0.35 0.37 0.39 0.41 0.43 0.45 0.35 0.37 0.39 0.41 0.43 0.45 - FREQUENCY (GHz) FREQUENCY (GHz) S R E I P1dB vs. Temperature @ 400 MHz Psat vs. Temperature @ 400 MHz F I 34 34 L P 33 33 M 32 32 31 31 A m) 30 m) 30 P1dB (dB 2289 Psat (dB 2289 +25 C 27 +25 C 27 +85 C 26 +85 C 26 -40 C -40 C 25 25 24 24 0.35 0.37 0.39 0.41 0.43 0.45 0.35 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) FREQUENCY (GHz) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 125 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Noise Figure Output IP3 vs. Temperature @ 400 MHz vs. Temperature @ 400 MHz 50 10 48 9 46 8 44 dB) 7 9 OIP3 (dBm) 33446802 ++-428055 CCC NOISE FIGURE ( 3456 ++2855 CC 34 2 -40 C 32 1 T 30 0 M 0.35 0.37 0.39 0.41 0.43 0.45 0.35 0.37 0.39 0.41 0.43 0.45 S FREQUENCY (GHz) FREQUENCY (GHz) - R Reverse Isolation Gain, Power & IP3 E vs. Temperature @ 400 MHz vs. Supply Voltage @ 400 MHz W 0 m) 50 O B d P -5 P3 ( 45 & dB) -10 ++2855 CC m), OI 40 N ( -40 C dB 35 EAR ISOLATIO --2105 Bm), Psat ( 2350 d N B ( 20 -25 d LI -30 dB), P1 15 GP1adinB POsIPat3 S - 0.35 0.37 FR0E.3Q9UENCY 0(.G4H1z) 0.43 0.45 GAIN ( 104.5 4.75 5 5.25 5.5 R Vs (Vdc) E ACPR vs. Supply Voltage @ 400 MHz I F Power Compression @ 400 MHz W-CDMA, 64 DPCH I L 55 -10 P 50 -15 AM B), PAE (%) 344505 GPPoAauiEnt c) ---322050 WFI6n4rt-ee CDqgDuPraeMCtniHAocny: B4W00: 3M.8H4z MHz Bm), Gain (d 223050 ACPR (dB ----54430505 4.5V 5V5.5V out (d 1105 --6505 P 5 -65 Source ACPR 0 -70 0 2 4 6 8 10 12 14 16 8 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm) Channel Power (dBm) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 126 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 470 MHz Gain vs. Temperature @ 470 MHz 25 23 20 22 21 15 20 B) 10 S21 d 19 NSE ( 5 SS1212 N (dB) 18 RESPO -50 GAI 1167 ++2855 CC 9 15 -40 C -10 14 -15 13 T -20 12 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.43 0.45 0.47 0.49 0.51 0.53 M FREQUENCY (GHz) FREQUENCY (GHz) S - Input Return Loss Output Return Loss R vs. Temperature @ 470 MHz vs. Temperature @ 470 MHz E W 0 0 -2 O -5 P B) B) -4 +25 C d d +85 C SS ( -10 ++2855 CC SS ( -6 -40 C & O -40 C O N L N L -8 R UR -15 UR -10 A T T RE RE E -12 -20 N -14 I L -25 -16 0.43 0.45 0.47 0.49 0.51 0.53 0.43 0.45 0.47 0.49 0.51 0.53 - FREQUENCY (GHz) FREQUENCY (GHz) S R E I P1dB vs. Temperature @ 470 MHz Psat vs. Temperature @ 470 MHz F I 34 34 L P 33 33 M 32 32 31 31 A m) 30 m) 30 P1dB (dB 2289 +25 C Psat (dB 2289 +25 C 27 +85 C 27 +85 C 26 -40 C 26 -40 C 25 25 24 24 0.43 0.45 0.47 0.49 0.51 0.53 0.43 0.45 0.47 0.49 0.51 0.53 FREQUENCY (GHz) FREQUENCY (GHz) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 127 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Noise Figure Output IP3 vs. Temperature @ 470 MHz vs. Temperature @ 470 MHz 50 10 48 9 46 8 44 dB) 7 9 OIP3 (dBm) 344802 ++2855 CC SE FIGURE ( 456 ++2855 CC 36 -40 C OI 3 -40 C N 34 2 32 1 T 30 0 M 0.43 0.45 0.47 0.49 0.51 0.53 0.43 0.45 0.47 0.49 0.51 0.53 S FREQUENCY (GHz) FREQUENCY (GHz) - R Reverse Isolation Gain, Power & IP3 E vs. Temperature @ 470 MHz vs. Supply Voltage @ 470 MHz W 0 m) 50 B O -5 P3 (d 45 EAR & P ISOLATION (dB) ----22115050 ++-428055 CCC B (dBm), Psat (dBm), OI 2233405050 PGPO1saIdPainBt3 N 1d LI -30 dB), P 15 -35 N ( 10 - 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 AI 4.5 4.75 5 5.25 5.5 G S FREQUENCY (GHz) Vs (Vdc) R E ACPR vs. Supply Voltage @ 470 MHz I F Power Compression @ 470 MHz W-CDMA, 64 DPCH I L 55 -10 P 50 -15 AM B), PAE (%) 344505 GPPoAauiEnt c) ---322050 WFI6n4rt-ee CDqgDuPraeMCtniHAocny: B4W70: 3M.8H4z MHz d B -35 Gain ( 2350 PR (d -40 4.5V Bm), 20 AC --5405 5V 5.5V out (d 1105 --6505 P 5 -65 Source ACPR 0 -70 0 2 4 6 8 10 12 14 16 8 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm) Channel Power (dBm) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 128 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 900 MHz Gain vs. Temperature @ 900 MHz 20 18 15 17 16 10 B) 15 NSE (d 05 SSS212112 N (dB) 1134 ESPO -5 GAI 12 ++2855 CC 9 R 11 -40 C -10 10 -15 9 T -20 8 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 M FREQUENCY (GHz) FREQUENCY (GHz) S - Input Return Loss Output Return Loss R vs. Temperature @ 900 MHz vs. Temperature @ 900 MHz E W 0 0 O -5 +25 C P B) B) -5 +85 C S (d -10 S (d -40 C & S S O O N L -15 N L -10 R R R U U A RET -20 +25 C RET E +85 C -15 -25 -40 C N I L -30 -20 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 - FREQUENCY (GHz) FREQUENCY (GHz) S R E I P1dB vs. Temperature @ 900 MHz Psat vs. Temperature @ 900 MHz F I 34 34 L P 33 33 M 32 32 31 31 A m) 30 m) 30 P1dB (dB 2289 +25 C Psat (dB 2289 ++2855 CC 27 +85 C 27 -40 C 26 -40 C 26 25 25 24 24 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 129 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Noise Figure Output IP3 vs. Temperature @ 900 MHz vs. Temperature @ 900 MHz 50 10 48 9 46 8 44 B) 7 d m) 42 E ( 6 B R d U 9 OIP3 ( 3480 +25 C SE FIG 45 +85 C OI 36 -40 C N 3 +25 C +85 C 34 2 -40 C 32 1 T 30 0 M 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 S FREQUENCY (GHz) FREQUENCY (GHz) - R Reverse Isolation Gain, Power & IP3 E vs. Temperature @ 900 MHz vs. Supply Voltage @ 900 MHz W 0 m) 50 B O 3 (d 45 -5 P P OI EAR & ISOLATION (dB) ---211050 ++-428055 CCC B (dBm), Psat (dBm), 2233405050 PG1adinB POsIPat3 N 1d -25 P LI dB), 15 -30 N ( 10 - 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 AI 4.5 4.75 5 5.25 5.5 G S FREQUENCY (GHz) Vs (Vdc) R E ACPR vs. Supply Voltage @ 910 MHz I F Power Compression @ 900 MHz CDMA IS95, 9 Channels Forward I L 55 -10 P 50 -15 AM B), PAE (%) 344505 GPPoAauiEnt c) ---322050 CFIFnroDteerMqwguarAaer dtnIiSo cL9nyi5n: Bk9W,1 90: C1M.h2Ha2zn8n MelHsz d B -35 Gain ( 2350 PR (d -40 Bm), 20 AC --5405 4.5V 5V 5.5V out (d 1105 --6505 P 5 -65 Source ACPR 0 -70 4 6 8 10 12 14 16 18 20 22 8 10 12 14 16 18 20 22 24 26 INPUT POWER (dBm) Channel Power (dBm) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 130 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 1900 MHz Gain vs. Temperature @ 1900 MHz 15 13 12 10 11 5 10 S21 B) S11 9 NSE (d -50 S22 N (dB) 78 RESPO -10 GAI 456 ++2855CC 9 -15 3 -40C 2 -20 1 T -25 0 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.7 1.8 1.9 2 2.1 M FREQUENCY (GHz) FREQUENCY (GHz) S - Input Return Loss Output Return Loss R vs. Temperature @ 1900 MHz vs. Temperature @ 1900 MHz E W 0 0 O +25 C +25 C -5 +85 C P B) -5 +85 C B) -40 C SS (d -40 C SS (d -10 & O O N L -10 N L R UR UR -15 A T T RE RE E -15 -20 N I L -20 -25 1.7 1.8 1.9 2 2.1 1.7 1.8 1.9 2 2.1 - FREQUENCY (GHz) FREQUENCY (GHz) S R E I P1dB vs. Temperature @ 1900 MHz Psat vs. Temperature @ 1900 MHz F I 34 34 L P 33 33 M 32 32 31 31 A m) 30 m) 30 P1dB (dB 2289 +25 C Psat (dB 2289 ++2855 CC 27 +85 C 27 -40 C 26 -40 C 26 25 25 24 24 1.7 1.8 1.9 2 2.1 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) FREQUENCY (GHz) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 131 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Noise Figure Output IP3 vs. Temperature @ 1900 MHz vs. Temperature @ 1900 MHz 52 10 50 9 48 8 46 dB) 7 9 OIP3 (dBm) 3344468024 ++-428055 CCC NOISE FIGURE ( 3456 ++2855 CC 34 2 -40 C 32 1 T 30 0 M 1.7 1.8 1.9 2 2.1 1.7 1.8 1.9 2 2.1 S FREQUENCY (GHz) FREQUENCY (GHz) - R Reverse Isolation Gain, Power & IP3 E vs. Temperature @ 1900 MHz vs. Supply Voltage @ 1900 MHz W 0 m) 55 B O d 50 3 ( R & P TION (dB) -1-05 ++-428055 CCC Psat (dBm), OIP 33440505 A OLA m), 25 Gain NE IS -15 dB (dB 1250 PPO1sIdPaBt3 1 P LI B), 10 - -201.7 1.8 1.9 2 2.1 GAIN (d 54.5 4.75 5 5.25 5.5 S FREQUENCY (GHz) Vs (Vdc) R E ACPR vs. Supply Voltage @ 1960 MHz I F Power Compression @ 1900 MHz CDMA 2000, 9 Channels Forward I L 50 -30 P 45 -35 M %) Pout E ( 40 Gain -40 CDMA2000 4.5V A PA 35 PAE -45 FInrteeqguraetniocny: B1W.9:6 1 G.2H2z8 MHz ain (dB), 2350 R (dBc) --5550 Forward Link, SR1, 9 Channels 5.55VV G P m), 20 AC -60 dB 15 -65 ut ( 10 -70 o P 5 -75 0 -80 10 12 14 16 18 20 22 24 26 14 16 18 20 22 24 26 28 Input Power (dBm) Output Channel Power (dBm) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 132 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 2100 MHz Gain vs. Temperature @ 2100 MHz 15 12 11 10 10 5 S21 9 dB) 0 SS1212 8 NSE ( -5 N (dB) 67 SPO -10 GAI 5 +25 C 9 RE -15 4 +85 C 3 -40 C -20 2 -25 1 T -30 0 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.9 2 2.1 2.2 2.3 M FREQUENCY (GHz) FREQUENCY (GHz) S - Input Return Loss Output Return Loss R vs. Temperature @ 2100 MHz vs. Temperature @ 2100 MHz E W 0 0 O -5 -5 +25 C P OSS (dB) -10 ++2855 CC OSS (dB) -10 +-4805 CC & N L -15 -40 C N L R UR UR -15 A RET -20 RET E -20 N -25 I L -30 -25 1.9 2 2.1 2.2 2.3 1.9 2 2.1 2.2 2.3 - FREQUENCY (GHz) FREQUENCY (GHz) S R E I P1dB vs. Temperature @ 2100 MHz Psat vs. Temperature @ 2100 MHz F I 34 34 L P 33 33 M 32 32 31 31 A m) 30 m) 30 P1dB (dB 2289 +25 C Psat (dB 2289 ++2855 CC 27 +-4805 CC 27 -40 C 26 26 25 25 24 24 1.9 2 2.1 2.2 2.3 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 133 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Noise Figure Output IP3 vs. Temperature @ 2100 MHz vs. Temperature @ 2100 MHz 52 10 50 9 48 8 46 dB) 7 9 OIP3 (dBm) 3344468024 ++-428055 CCC NOISE FIGURE ( 3456 ++2855 CC 34 2 -40 C 32 1 T 30 0 M 1.9 2 2.1 2.2 2.3 1.9 2 2.1 2.2 2.3 S FREQUENCY (GHz) FREQUENCY (GHz) - R Reverse Isolation Gain, Power & IP3 E vs. Temperature @ 2100 MHz vs. Supply Voltage @ 2100 MHz W 0 m) 55 B O 3 (d 50 R & P TION (dB) -1-05 ++-428055 CCC Psat (dBm), OIP 33440505 NEA ISOLA -15 dB (dBm), 122505 GPPO1saIdPainBt3 1 P LI B), 10 -20 N (d 5 - 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 AI 4.5 4.75 5 5.25 5.5 G S FREQUENCY (GHz) Vs (Vdc) R E ACPR vs. Supply Voltage @ 2140 MHz I F Power Compression @ 2100 MHz W-CDMA, 64 DPCH I L 50 -20 P 4.5V 45 -25 M %) Pout A m), Gain (dB), PAE ( 2233405050 GPAaiEn ACPR (dBc) -----5443305050 WFI6n4rt-ee CDqgDuPraeMCtniHAocny: B2W.1:4 3 G.8H4z MHz 5.55VV dB 15 ut ( 10 -55 o P 5 -60 Source ACPR 0 -65 10 12 14 16 18 20 22 24 26 28 12 14 16 18 20 22 24 26 28 Input Power (dBm) OUTPUT CHANNEL POWER (dBm) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 134 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Power Dissipation Absolute Maximum Ratings 3 Collector Bias Voltage (Vcc) +6.0 Vdc Max Pdiss @ +85C RF Input Power (RFIN)(Vs +5Vdc) +31 dBm W) N ( 2.5 Junction Temperature 150 °C TIO Continuous Pdiss (T = 85 °C) 2.7 W A (derate 41.5 mW/°C above 85 °C) P SI 2 R DIS 1900 MHz T(juhnecrmtioanl Rtoe gsirsotuanndc epaddle) 24.1 °C/W 9 E W Storage Temperature -65 to +150 °C O 1.5 P 2100 MHz Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A T 1 0 5 10 15 20 25 M INPUT POWER (dBm) S ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS - R E Outline Drawing W O P & R A E N I L - S R NOTES: 1. PACKAGE BODY MATERIAL: E MOLDING COMPOUND MP-180S OR EQUIVALENT. I 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. F 3. LEAD PLATING: 100% MATTE TIN. LI 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] P 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. M 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. A Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC452ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H452 XXXX HMC452ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H452 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 135 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Pin Descriptions Pin Number Function Description Interface Schematic This pin is DC coupled. 1 RFIN Off chip matching components are required. See Application Circuit herein. RF output and DC Bias input for the output amplifi er stage. 3 RFOUT Off chip matching components are required. 9 See Application Circuit herein. These pins & package bottom must be connected to 2, 4 GND RF/DC ground. T M S - R 400 MHz Application Circuit E This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications W Group for assistance in optimizing performance for your application. O P & R A E N I L - S R E I F I L P M Note: C2 should be placed as close to pins as possible. Recommended Component Values A TL1 TL2 TL3 TL4 TL5 C1 12 pF Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm C2 15 pF Physical Length 0.09” 0.08” 0.17” 0.04” 0.25” C3, C4 6.8 pF Electrical Length 2° 2° 4° 1° 6° C5 39 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 C6 100 pF C7 2.2 μF L1 47 nH L2 40 nH L3 4.3 nH L4 5.1 nH R1 5.1 Ohm InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 136 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 400 MHz Evaluation PCB 9 T M S - R E W O P & R A E N I L List of Materials for Evaluation PCB 110409-400 [1] - The circuit board used in this application should use Item Description S J1 - J2 PCB Mount SMA Connector RF circuit design techniques. Signal lines should R J3 2 mm DC Header have 50 Ohm impedance while the package ground E leads and exposed paddle should be connected I C1 12 pF Capacitor, 0402 Pkg. F directly to the ground plane similar to that shown. C2 15 pF Capacitor, 0402 Pkg. LI A sufficient number of via holes should be used to C3, C4 6.8 pF Capacitor, 0402 Pkg. P connect the top and bottom ground planes. The C5 39 pF Capacitor, 0402 Pkg. M evaluation board should be mounted to an appro- C6 100 pF Capacitor, 0402 Pkg. A priate heat sink. The evaluation circuit board shown C7 2.2 μF Capacitor, Tantalum is available from Hittite upon request. L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3 4.3 nH Inductor, 0402 Pkg. L4 5.1 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. HMC452ST89 / HMC452ST89E U1 Linear Amp PCB [2] 110407 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 137 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 470 MHz Application Circuit This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. 9 T M S - R E W O P Note: C2 should be placed as close to pins as possible. & TL1 TL2 TL3 TL4 TL5 Recommended Component Values R Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1, C2 12 pF A Physical Length 0.09” 0.08” 0.17” 0.04” 0.25” C3 6.8 pF E Electrical Length 2.5° 2° 5° 1° 7° C4 5.6 pF N PCB Material: 10 mil Rogers 4350, Er = 3.48 C5 39 pF I L C6 100 pF - C7 2.2 μF S L1 47 nH R L2 40 nH E L3 4.7 nH I F L4 3.9 nH I R1 5.1 Ohm L P M A InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 138 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 470 MHz Evaluation PCB 9 T M S - R E W O P & R A E N I L List of Materials for Evaluation PCB 110416-470 [1] - The circuit board used in this application should use Item Description S RF circuit design techniques. Signal lines should J1 - J2 PCB Mount SMA Connector R J3 2 mm DC Header have 50 Ohm impedance while the package ground E leads and exposed paddle should be connected I C1, C2 12 pF Capacitor, 0402 Pkg. F directly to the ground plane similar to that shown. C3 6.8 pF Capacitor, 0402 Pkg. LI A sufficient number of via holes should be used to C4 5.6 pF Capacitor, 0402 Pkg. P connect the top and bottom ground planes. The C5 39 pF Capacitor, 0402 Pkg. M evaluation board should be mounted to an appro- C6 100 pF Capacitor, 0402 Pkg. A priate heat sink. The evaluation circuit board shown C7 2.2 μF Capacitor, Tantalum is available from Hittite upon request. L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3 4.7 nH Inductor, 0402 Pkg. L4 3.9 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. HMC452ST89 / HMC452ST89E U1 Linear Amp PCB [2] 110407 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 139 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 900 MHz Application Circuit This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. 9 T M S - R E W O P Note: C2 should be placed as close to pins as possible. & TL1 TL2 TL3 Recommended Component Values R A Impedance 50 Ohm 50 Ohm 50 Ohm C1 27 pF E Physical Length 0.21” 0.13” 0.38” C2 6.8 pF N Electrical Length 11° 7° 20° C3 2.2 pF I PCB Material: 10 mil Rogers 4350, Er = 3.48 C4 4.7 pF L C5 5.6 pF - C6 100 pF S C7 2.2 μF R E L1 20 nH I R1 5.1 Ohm F I L P M A InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 140 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 900 MHz Evaluation PCB 9 T M S - R E W O P & R A E N I L - S List of Materials for Evaluation PCB 110384-900 [1] R The circuit board used in this application should use E Item Description RF circuit design techniques. Signal lines should I J1 - J2 PCB Mount SMA Connector F have 50 Ohm impedance while the package ground I J3 2 mm DC Header L leads and exposed paddle should be connected P C1 27 pF Capacitor, 0402 Pkg. directly to the ground plane similar to that shown. M C2 6.8 pF Capacitor, 0402 Pkg. A sufficient number of via holes should be used to C3 2.2 pF Capacitor, 0402 Pkg. A connect the top and bottom ground planes. The C4 4.7 pF Capacitor, 0402 Pkg. evaluation board should be mounted to an appro- C5 5.6 pF Capacitor, 0402 Pkg. priate heat sink. The evaluation circuit board shown C6 100 pF Capacitor, 0402 Pkg. is available from Hittite upon request. C7 2.2 μF Capacitor, Tantalum L1 20 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. HMC452ST89 / HMC452ST89E U1 Linear Amp PCB [2] 110382 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 141 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 1900 MHz Application Circuit This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. 9 T M S - R E W O P Note: C2 should be placed as close to pins as possible. & TL1 TL2 Recommended Component Values R Impedance 50 Ohm 50 Ohm C1 3 pF A Physical Length 0.04” 0.10” C2 2 pF E Electrical Length 4° 11° C3 3.3 pF N PCB Material: 10 mil Rogers 4350, Er = 3.48 C4 15 pF I C5 100 pF L C6 2.2 μF - L1 10 nH S R L2 12 nH E R1 5.1 Ohm I F I L P M A InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 142 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 1900 MHz Evaluation PCB 9 T M S - R E W O P & R A E N I L - S List of Materials for Evaluation PCB 108712-1900 [1] R The circuit board used in this application should use E Item Description RF circuit design techniques. Signal lines should I J1 - J2 PCB Mount SMA Connector F have 50 Ohm impedance while the package ground I J3 2 mm DC Header L C1 3 pF Capacitor, 0402 Pkg. leads and exposed paddle should be connected P directly to the ground plane similar to that shown. M C2 2 pF Capacitor, 0402 Pkg. A sufficient number of via holes should be used to C3 3.3 pF Capacitor, 0402 Pkg. A connect the top and bottom ground planes. The C4 15 pF Capacitor, 0402 Pkg. evaluation board should be mounted to an appro- C5 100 pF Capacitor, 0402 Pkg. priate heat sink. The evaluation circuit board shown C6 2.2 μF Capacitor, Tantalum is available from Hittite upon request. L1 10 nH Inductor, 0402 Pkg. L2 12 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. HMC452ST89 / HMC452ST89E U1 Linear Amp PCB [2] 108710 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 143 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 2100 MHz Application Circuit This circuit was used to specify the performance for 2010-2170 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. 9 T M S - R E W O P & R A E N TL1 TL2 Recommended Component Values I L Impedance 50 Ohm 50 Ohm C1 3 pF - Physical Length 0.04” 0.04” C2 2 pF S Electrical Length 5° 5° C3 3.3 pF R PCB Material: 10 mil Rogers 4350, Er = 3.48 C4 15 pF E C5 100 pF I F C6 2.2 μF I L L1 12 nH P L2 10 nH M R1 5.1 Ohm A InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 144 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D
HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 2100 MHz Evaluation PCB 9 T M S - R E W O P & R A E N I L - List of Materials for Evaluation PCB 109824-2100 [1] S R The circuit board used in this application should use Item Description E RF circuit design techniques. Signal lines should J1 - J2 PCB Mount SMA Connector I F have 50 Ohm impedance while the package ground J3 2 mm DC Header I leads and exposed paddle should be connected L C1 3 pF Capacitor, 0402 Pkg. P directly to the ground plane similar to that shown. C2 2 pF Capacitor, 0402 Pkg. M A sufficient number of via holes should be used to C3 3.3 pF Capacitor, 0402 Pkg. A connect the top and bottom ground planes. The C4 15 pF Capacitor, 0402 Pkg. evaluation board should be mounted to an appro- C5 100 pF Capacitor, 0402 Pkg. priate heat sink. The evaluation circuit board shown C6 2.2 μF Capacitor, Tantalum is available from Hittite upon request. L1 12 nH Inductor, 0402 Pkg. L2 10 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. HMC452ST89 / HMC452ST89E U1 Linear Amp PCB [2] 109822 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 9 - 145 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D