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  • 型号: HMC441LP3E
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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产品参数

参数 数值
产品目录 射频/IF 和 RFID
描述 IC MMIC PWR AMP 16QFN
产品分类 RF 放大器
品牌 Hittite Microwave Corporation
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产品图片
P1dB 17dBm
产品型号 HMC441LP3E
RF类型 通用
rohs 无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 -
供应商器件封装 16-QFN(3x3)
其它名称 1127-1043-2
HMC441LP3ETR
包装 带卷 (TR)
噪声系数 4.75dB
增益 13dB
封装/外壳 16-VFQFN 裸露焊盘
标准包装 500
测试频率 -
电压-电源 5V
电流-电源 115mA
频率 6.5GHz ~ 13.5GHz

Datasheet

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HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications Features The HMC441LP3 / HMC441LP3E is a medium PA for: Gain: 14 dB T • Point-to-Point Radios Saturated Power: +20 dBm @ 20% PAE M • Point-to-Multi-Point Radios Single Supply Voltage: S +5V w/ Optional Gate Bias • VSAT - S • LO Driver for HMC Mixers 50 Ohm Matched Input/Output R • Military EW & ECM 16 Lead 3x3mm SMT Package: 9mm2 E I F I L Functional Diagram General Description P M The HMC441LP3 & HMC441LP3E are broadband A GaAs PHEMT MMIC Medium Power Amplifiers which operate between 6.5 and 13.5 GHz. The leadless R plastic QFN surface mount packaged amplifier E W provides 14 dB of gain, +20 dBm saturated power at 20% PAE from a +5V supply voltage. An optional O gate bias is provided to allow adjustment of gain, P RF output power, and DC power dissipation. This & 50 Ohm matched amplifier does not require any R external components making it an ideal linear gain A block or driver for HMC SMT mixers. E N I L Vgg1, Vgg2: Optional Gate Bias Electrical Specifications, T = +25° C, Vdd = 5V, Vgg1 = Vgg2 = Open A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6.5 - 8.0 8.0 - 11.0 11.0 - 13.5 GHz Gain 10 13 12 14 10 13 dB Gain Variation Over Temperature 0.02 0.025 0.02 0.025 0.02 0.025 dB/ °C Input Return Loss 12 15 14 dB Output Return Loss 12 15 13 dB Output Power for 1 dB Compression (P1dB) 13 16 15 18 14 17 dBm Saturated Output Power (Psat) 18.5 20 19.5 dBm Output Third Order Intercept (IP3) 23 26 26 29 26 29 dBm Noise Figure 5.0 4.5 4.75 dB Supply Current (Idd) 90 115 90 115 90 115 mA InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 15 T 10 16 M dB) 5 S21 S NSE ( 0 SS1212 N (dB) 12 - SPO -5 GAI 8 ++2855 CC S RE-10 -40 C R -15 4 E -20 I F -25 0 I 4 5 6 7 8 9 10 11 12 13 14 15 16 6 7 8 9 10 11 12 13 14 L P FREQUENCY (GHz) FREQUENCY (GHz) M A Input Return Loss vs. Temperature Output Return Loss vs. Temperature R E 0 0 W -5 ++2855 CC -5 ++2855 CC O dB) -40 C dB) -40 C P OSS (-10 OSS (-10 & L L N N UR-15 UR-15 R T T E E A R R -20 -20 E N -25 -25 I L 6 7 8 9 10 11 12 13 14 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 24 24 20 20 B) 16 B) 16 P1dB (d 12 Psat (d 12 ++2855 CC -40 C +25 C 8 +85 C 8 -40 C 4 4 6 7 8 9 10 11 12 13 14 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) FREQUENCY (GHz) InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Power Compression @ 10 GHz Output IP3 vs. Temperature 22 36 T %) 20 PGoauint M E ( 18 PAE 32 PA 16 S dB), 14 m) 28 S - m), GAIN ( 11802 IP3 (dB 24 R B d 6 E out ( 4 20 ++2855 CC FI P 2 -40 C I 0 16 L -10 -6 -2 2 6 10 6 7 8 9 10 11 12 13 14 P INPUT POWER (dBm) FREQUENCY (GHz) M A Gain, Power & Output IP3 Gain, Power & Idd R vs. Supply Voltage @ 10 GHz vs. Gate Voltage @ 10 GHz E W m) 32 35 210 R & PO Bm), Psat (dBm), IP3 (dB 12222238024680 GPPIP1sa3adintB P1dB (dBm), Psat (dBm) 12235050 GPP1saadintB Idd 91110258000 Idd (mA) NEA B), P1dB (d 111246 GAIN (dB), 150 3600 d LI N ( 10 0 0 GAI 3 3.5 4 4.5 5 5.5 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 Vdd Supply Voltage (V) Vgg1, Vgg2 Gate Volltage (V) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 10 0 +25 C 8 +85 C -10 B) -40 C SE FIGURE (d 46 OLATION (dB)--3200 ++-428055 CCC NOI IS 2 -40 0 -50 6 7 8 9 10 11 12 13 14 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) FREQUENCY (GHz) InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +6 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1,Vgg2) -8 to 0 Vdc +5.5 92 T RF Input Power (RFIN)(Vdd = +5 Vdc) +15 dBm +5.0 90 M Channel Temperature 175 °C +4.5 88 S Continuous Pdiss (T = 85 °C) +3.3 83 0.76 W - (derate 8.5 mW/°C above 85 °C) +3.0 82 S Thermal Resistance 118.2 °C/W Note: Amplifier will operate over full voltage range shown above R (channel to ground paddle) E Storage Temperature -65 to +150 °C I Operating Temperature -40 to +85 °C F ELECTROSTATIC SENSITIVE DEVICE I L OBSERVE HANDLING PRECAUTIONS P M Outline Drawing A R E W O P & R A E N I L NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC441LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 441 XXXX HMC441LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 441 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Pin Descriptions Pin Number Function Description Interface Schematic T 1, 3-5, 8-10, N/C This pin may be connected to RF/DC ground. M 12-14, 16 S This pin is AC coupled 2 RFIN and matched to 50 Ohms. - S R Optional gate control for amplifier. If left open, the amplifier E 6, 7 Vgg1, Vgg2 will run at standard current. Negative voltage applied will I reduce current. F I L P This pin is AC coupled M 11 RFOUT and matched to 50 Ohms. A R E Power Supply Voltage for the amplifier. An external bypass 15 Vdd W capacitor of 100 pF is required. O P & GND Package bottom must be connected to RF/DC ground. R A E N I L InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Evaluation PCB T M S - S R E I F I L P M A R E W O P & R A E N I L List of Materials for Evaluation PCB 106705 [1] The circuit board used in the final application Item Description should use RF circuit design techniques. Signal J1 - J2 PCB Mount SMA Connector lines should have 50 Ohm impedance while the J3 - J7 DC Pin package ground leads and exposed paddle should C1 4.7 µF Capacitor, Tantalum be connected directly to the ground plane similar to C2 - C4 100 pF Capacitor, 0402 Pkg. that shown. A sufficient number of via holes should U1 HMC441LP3 / HMC441LP3E Amplifier be used to connect the top and bottom ground PCB [2] 106639 Evaluation PCB, 10 mils planes. The evaluation board should be mounted [1] Reference this number when ordering complete evaluation PCB to an appropriate heat sink. The evaluation circuit [2] Circuit Board Material: Rogers 4350 board shown is available from Hittite upon request. InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

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