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  • 型号: HMC383LC4TR
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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产品参数

参数 数值
产品目录 射频/IF 和 RFID
描述 IC MMIC DVR AMP GAAS 24SMD
产品分类 RF 放大器
品牌 Hittite Microwave Corporation
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产品图片
P1dB 16.5dBm
产品型号 HMC383LC4TR
RF类型 通用
rohs 无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 -
供应商器件封装 24-SMT(4x4)
其它名称 1127-1754-6
包装 Digi-Reel®
噪声系数 8dB
增益 15dB
封装/外壳 24-TFQFN 裸露焊盘
标准包装 1
测试频率 -
电压-电源 4.5 V ~ 5.5 V
电流-电源 100mA
配用 /product-detail/zh/122198-HMC383LC4/1127-2392-ND/4794685
频率 12GHz ~ 30GHz

Datasheet

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HMC383LC4 v05.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Typical Applications Features The HMC383LC4 is ideal for: Gain: 15 dB T • Point-to-Point Radios Saturated Output Power: +18 dBm M • Point-to-Multi-Point Radios & VSAT Output IP3: +25 dBm S • Test Equipment & Sensors Single Positive Supply: +5V @ 100 mA - S • LO Driver for HMC Mixers 50 Ohm Matched Input/Output R • Military & Space RoHS Compliant 4x4 mm Package E I F I L Functional Diagram General Description P M The HMC383LC4 is a general purpose GaAs PHEMT A MMIC Driver Amplifier housed in a leadless RoHS R compliant SMT package. The amplifier provides 15 dB E of gain and +18 dBm of saturated power from a single W +5V supply. Consistent gain and output power across the operating band make it possible to use a com- O mon driver/LO amplifier approach in multiple radio P bands. The RF I/Os are DC blocked and matched to & 50 Ohms for ease of use. The HMC383LC4 is housed R in a RoHS compliant leadless 4x4 mm package A allowing the use of surface mount manufacturing E techniques. N I L Electrical Specifications, T = +25° C, Vdd = +5V A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 12 - 16 16 -24 24 - 28 28 - 30 GHz Gain 12 15 13 16 12 15 10 13 dB Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.02 0.03 0.02 0.03 dB/ °C Input Return Loss 14 14 11 13 dB Output Return Loss 14 17 10 8 dB Output Power for 1 dB Compression 12 15 13.5 16.5 13 16 12 15 dBm (P1dB) Saturated Output Power (Psat) 17 18 17 16 dBm Output Third Order Intercept (IP3) 24 25 25 23 dBm Noise Figure 10.5 8 7.5 8 dB Supply Current (Idd) 75 100 135 75 100 135 75 100 135 75 100 135 mA InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC383LC4 v05.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 T 16 M 10 dB) S SPONSE ( 0 SSS212112 GAIN (dB) 182 S - E +25C R R +85C -10 4 -40C E I F -20 0 I 8 12 16 20 24 28 32 12 14 16 18 20 22 24 26 28 30 L P FREQUENCY (GHz) FREQUENCY (GHz) M A Input Return Loss vs. Temperature Output Return Loss vs. Temperature R E 0 0 W +25C +25C O B) -5 +85C B) -5 +85C P OSS (d -40C OSS (d -40C & N L-10 N L-10 R R R U U T T E E A R R -15 -15 E N -20 -20 I L 12 14 16 18 20 22 24 26 28 30 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 22 22 20 20 18 18 16 16 m) 14 m) 14 P1dB (dB 11802 Psat (dB 11802 ++-428055CCC +25C 6 +85C 6 4 -40C 4 2 2 0 0 12 14 16 18 20 22 24 26 28 30 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) FREQUENCY (GHz) InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC383LC4 v05.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Power Compression @ 18 GHz Power Compression @ 30 GHz 20 20 RS - SMT m), GAIN (dB), PAE (%) 11111802468 GPPoaAuiEnt (((dd%BB)m)) Bm), GAIN (dB), PAE (%) 111116802468 GPPoaAuiEnt (((dd%BB)m)) FIE Pout (dB 46 Pout (d 24 2 I 0 L 0 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 P -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) M INPUT POWER (dBm) A R Output IP3 vs. Temperature Noise Figure vs. Temperature E 30 13 W 12 O 26 11 10 P dB) 9 AR & IP3 (dBm) 1282 ++-428055CCC OISE FIGURE ( 45678 +25C N +85C E 14 3 -40C 2 N 1 I 10 0 L 12 15 18 21 24 27 30 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz) FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 18 GHz Reverse Isolation vs. Temperature 19 0 m) B -10 at (d 18 Bm), Ps 17 N (dB)--3200 ++-428055CCC d O P1dB ( 16 OLATI-40 B), IS-50 d N ( 15 Gain AI P1dB -60 G Psat 14 -70 4.5 5 5.5 12 14 16 18 20 22 24 26 28 30 Vdd Supply Voltage (Vdc) FREQUENCY (GHz) InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC383LC4 v05.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +5.5 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +4.5 99 T Channel Temperature 175 °C +5.0 100 M Continuous Pdiss (T= 85 °C) +5.5 101 S 0.92 W (derate 10 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown above - Thermal Resistance 98 °C/W S (channel to ground paddle) R Storage Temperature -65 to +150 °C E Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE I ESD Sensitivity (HBM) Class 1A OBSERVE HANDLING PRECAUTIONS F I L P M A Outline Drawing R E W O P & R A E N I L NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. ALL DIMENSIONS ARE IN INCHES [MM] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C- 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [2] HMC383LC4 Alumina, White Gold over Nickel MSL3 [1] H383 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC383LC4 v05.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Pin Descriptions Pin Number Function Description Interface Schematic T No connection required. These pins may be connected 1, 2, 4 - 15, M 17, 18, 20 - 24 N/C to RF/DC ground without affecting performance if using grounded coplanar wave guide transmission lines. S - 3 RFIN Thims aptacdh eisd A toC 5c0o uOphlemds a.nd S R This pad is AC coupled and 16 RFOUT E matched to 50 Ohms. I F I L Power Supply Voltage for the amplifier. External bypass 19 Vdd P capacitors of 100 pF, 1,000 pF and 2.2 µF are required. M A Package base has an exposed metal ground R GND that must be connected to RF/DC ground. Vias under the device are required E W O P Application Circuit & R Component Value A C1 100 pF E C2 1,000 pF N C3 2.2 µF I L InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC383LC4 v05.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Evaluation PCB T M S - S R E I F I L P M A R E W O P & R A E N I L List of Materials for Evaluation PCB 122198 [1] The circuit board used in this application should use Item Description RF circuit design techniques. Signal lines should J1, J2 2.92 mm PCB mount K-connector have 50 Ohm impedance while the package ground J3, J4 DC Pin leads and exposed paddle should be connected C1 100 pF capacitor, 0402 pkg. directly to the ground plane similar to that shown. C2 1,000 pF Capacitor, 0603 pkg. A sufficient number of via holes should be used to C3 2.2µF Capacitor, Tantalum connect the top and bottom ground planes. The U1 HMC383LC4 Amplifier evaluation board should be mounted to an appro- PCB [2] 108535 Evaluation PCB priate heat sink. The evaluation circuit board shown [1] Reference this number when ordering complete evaluation PCB is available from Hittite upon request. [2] Circuit Board Material: Rogers 4350. InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

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