HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Typical Applications Features The HmC374sC70e is ideal for: single supply: Vdd = +3.0 to +3.6V T • Cellular/pCs/3G Broadband performance m • WCs, mmDs & ism low Noise figure: 1.6 dB s • fixed Wireless & WlAN High Output ip3: +35 dBm - s • private land mobile radio High Gain: 15 dB @ 0.6 GHz r e i f Functional Diagram General Description i l p The HmC374sC70e is a general purpose broad- m band low Noise Amplifier (lNA) for use in the 0.3 - A 3 GHz frequency range. The lNA provides 15 dB of gain and a 1.6 dB noise figure from a single positive supply of +3.0 to +3.6V. The low noise figure coupled with a high p1dB (17 dBm) and high Oip3 (35 dBm) make this part ideal for cellular applications. The compact lNA is designed for repeatable gain and noise figure performance. To minimize board area the design is offered in a low cost sC70e package that occupies only 0.089" x 0.053". Electrical Specifications, Vdd= +3.3V parameter min. [2] Typ.[1] max. [2] min. [2] Typ. [1] max. [2] min. [2] Typ. [1] max. [2] Units frequency 0.6 1.0 3.0 GHz Gain 14 15 13 14.5 6 8.5 dB Gain Variation Over Temperature 0.005 0.008 0.012 (-40°C to +25°C) dB/°C Gain Variation Over Temperature 0.004 0.005 0.008 (+25 °C to +85 °C) Noise figure 2 2.6 1.6 2.3 1.8 2.2 input return loss 4.5 5.5 6 7.5 8 9 dB Output return loss 5.5 7.5 8 10 13 15 Output 1 dB Compression (p1dB) 15.5 16.5 16 17 16.5 18 saturated Output power (psat) 17.5 18.5 17.5 18.5 18 19 dBm Output Third Order intercept (Oip3) 34 33.5 36 supply Current (idd) (Vdd = +3.3V) 75 75 75 mA supply Voltage (Vdd) 3.0 3.3 3.6 3.0 3.3 3.6 3.0 3.3 3.6 V [1] Typical values are determined at T=+25°C A [2] minimum and maximum values are determined from T=-40°C to T=+85°C A A InformationF ofurrn ipshreidc eby, Adnealloigv eDervyic easn isd b teolie vpelda tco eb eo arcdcuerartse :a Andn raelliaobgle. DHoewveivcere, sno, InFco.r, p2r iEceli,z daebliveetrhy , Darnidv eto, Cplhaceel morsdfeorrsd: ,A MnaAlog 0 D18ev2ic4es, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 16 18 T 12 16 m B) 8 14 s d SPONSE ( -404 SSS212112 GAIN (dB) 11028 s - E r R -8 6 e -12 4 +25C i +85C f -16 2 -40C i -20 0 l 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 p FREQUENCY (GHz) FREQUENCY (GHz) m A Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -2 -2 SS (dB) -4 OSS (dB) --64 ++-428055CCC N LO -6 RN L -8 R -8 U -10 U T T E PUT RE --1120 TPUT R --1142 IN -14 ++2855CC OU -16 -40C -18 -16 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature Output IP3 vs. Temperature [1] 5 46 44 4 +25C 42 +25C dB) +-4805CC 40 +-4805CC RE ( 3 Bm) 38 U d FIG P3 ( 36 E 2 OI 34 S OI 32 N 1 30 28 0 26 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) FREQUENCY (GHz) [1] Oip3 measurements were taken for pout = 0 dBm InformationF ofurrn ipshreidc eby, Adnealloigv eDervyic easn isd b teolie vpelda tco eb eo arcdcuerartse :a Andn raelliaobgle. DHoewveivcere, sno, InFco.r, p2r iEceli,z daebliveetrhy , Darnidv eto, Cplhaceel morsdfeorrsd: ,A MnaAlog 0 D18ev2ic4es, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mayP rehsuolt nfroem: i9ts 7us8e-. 2Sp5e0cif-ic3at3io4ns3 s u•b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No • OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Output P1dB vs. Temperature Output Psat vs. Temperature 22 22 T m 20 20 s m) 18 m) 18 s - P1dB (dB 16 Psat (dB 16 r e +25C 14 +25C 14 +85C i +85C -40C f -40C i l 12 12 p 0.5 1 1.5 2 2.5 3 3.5 0.5 1 1.5 2 2.5 3 3.5 m FREQUENCY (GHz) FREQUENCY (GHz) A Reverse Isolation vs. Temperature Pout, Gain & PAE @ 2 GHz 0 30 -5 %) 25 Pout -10 ++2855CC AE ( GPAaiEn TION (dB) --2105 -40C ain (dB), P 1250 A G OL -25 m), IS dB 10 -30 ut ( o 5 P -35 -40 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 FREQUENCY (GHz) INPUT POWER (dBm) Gain, Noise Figure & P1dB vs. Supply Voltage @ 2 GHz Supply Current vs. Input Power @ 2 GHz 22 8 76 20 P1dB 7 Gain m) 18 6 75 B N d O GAIN (dB), P1dB ( 11110246 Noise Figure 2345 ISE FIGURE (dB) Idd (mA) 7734 8 1 6 0 72 3 3.5 4 4.5 5 5.5 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 Vdd (V) INPUT POWER (dBm) InformationF ofurrn ipshreidc eby, Adnealloigv eDervyic easn isd b teolie vpelda tco eb eo arcdcuerartse :a Andn raelliaobgle. DHoewveivcere, sno, InFco.r, p2r iEceli,z daebliveetrhy , Darnidv eto, Cplhaceel morsdfeorrsd: ,A MnaAlog 0 D18ev2ic4es, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +7.0 Vdc Vdd (V) idd (mA) rf input power (rfiN)(Vdd = +5.0 Vdc) 15 dBm 3 75 T Channel Temperature 150 °C 3.3 75 m Continuous pdiss (T = 85 °C) 3.6 75 s 0.32 W (derate 4.88 mW/°C above 85 °C) - Thermal resistance 205 °C/W s (channel to lead) r storage Temperature -65 to +150 °C eleCTrOsTATiC seNsiTiVe DeViCe e Operating Temperature -40 to +85 °C OBserVe HANDliNG preCAUTiONs i esD sensitivity (HBm) Class 0 f i l p Outline Drawing m A NOTes: 1. pACKAGe BODY mATeriAl: lOW sTress iNJeCTiON mOlDeD plAsTiC siliCA AND siliCON impreGNATeD. 2. leAD mATeriAl: COpper AllOY 3. leAD plATiNG: 100% mATTe TiN. 4. DimeNsiONs Are iN iNCHes [millimeTers] 5. C HArACTers TO Be HelVeTiCA meDiUm, .015 HiGH, WHiTe iNK Or lAser, lOCATeD ApprOXimATelY As sHOWN. 6. DimeNsiON DOes NOT iNClUDe mOlDflAsH Of 0.15mm per siDe. 7. DimeNsiON DOes NOT iNClUDe mOlDflAsH Of 0.25mm per siDe. 8. All GrOUND leADs mUsT Be sOlDereD TO pCB rf GrOUND. Package Information part Number package Body material lead finish msl rating package marking [3] HmC374sC70e roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] H374e XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX InformationF ofurrn ipshreidc eby, Adnealloigv eDervyic easn isd b teolie vpelda tco eb eo arcdcuerartse :a Andn raelliaobgle. DHoewveivcere, sno, InFco.r, p2r iEceli,z daebliveetrhy , Darnidv eto, Cplhaceel morsdfeorrsd: ,A MnaAlog 0 D18ev2ic4es, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mayP rehsuolt nfroem: i9ts 7us8e-. 2Sp5e0cif-ic3at3io4ns3 s u•b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No • OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Pin Descriptions pin Number function Description interface schematic T m These pins may be connected to rf/DC ground. 1,4 N/C performance will not be affected. s - 2, 5 GND These pins must be connected to rf/DC ground. s r rf input pin is DC coupled. e 3 iN An off-chip DC blocking capacitor is required. i f li 6 OUT seref a opuptlpicuat taionnd cDirCcu Biti afosr foofrf -thche ipo uctopmutp sotnaegnet.s . p m A Application Circuit InformationF ofurrn ipshreidc eby, Adnealloigv eDervyic easn isd b teolie vpelda tco eb eo arcdcuerartse :a Andn raelliaobgle. DHoewveivcere, sno, InFco.r, p2r iEceli,z daebliveetrhy , Darnidv eto, Cplhaceel morsdfeorrsd: ,A MnaAlog 0 D18ev2ic4es, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaytP iorenhs uoolrt nofrtoehme:r wi9tsis 7ues8 eu-.n 2dSep5re 0cainf-iyc3 apt3iaot4nesn3 ts ou•rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso .• OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D

HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Evaluation PCB T m s - s r e i f i l p m A List of Materials for EVAL01-HMC374SC70E [1] The circuit board used in the application should use item Description rf circuit design techniques. signal lines should J1, J2 pCB mount smA Connector have 50 Ohm impedance while the package ground J3, J4 DC pin leads should be connected directly to the ground C1 27 pf Capacitor, 0402 pkg. plane similar to that shown above. A sufficient C2 150 pf Capacitor, 0402 pkg. number of via holes should be used to connect C3 10 nf Capacitor, 0603 pkg. the top and bottom ground planes. The evaluation C4 4.7 Capacitor, Tantalum circuit board shown is available from Hittite upon l1 27 nH inductor, 0603 pkg. request. l2 22 nH inductor, 0402 pkg. r1 10 Ohms resistor, 0402 pkg. r2 0 Ohm resistor, 0402 pkg. U1 HmC374sC70e Amplifier pCB [2] 600-00435-00 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: roger 4350 InformationF ofurrn ipshreidc eby, Adnealloigv eDervyic easn isd b teolie vpelda tco eb eo arcdcuerartse :a Andn raelliaobgle. DHoewveivcere, sno, InFco.r, p2r iEceli,z daebliveetrhy , Darnidv eto, Cplhaceel morsdfeorrsd: ,A MnaAlog 0 D18ev2ic4es, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mayP rehsuolt nfroem: i9ts 7us8e-. 2Sp5e0cif-ic3at3io4ns3 s u•b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No • OPhrdoneer: O78n1--3li2n9e-4 a7t0 0w (cid:127)w Owrd.ehri totnitlien.ec aot mwww.analog.com 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks areA thpe pprolipceartyt oiof tnhe iSr reusppepctoiver to:w nPehrs.one: 978-250-3A3p4pl3ic aotrio an pSpupsp@ohrt:i tPtihteon.ce:o 1m-800-ANALOG-D