首页 > HMC327MS8GE > 详情
数量阶梯 | 香港交货 | 国内含税 |
+xxxx | $xxxx | ¥xxxx |
查看当月历史价格
查看今年历史价格
参数 | 数值 |
产品目录 | 射频/IF 和 RFID |
描述 | IC MMIC PWR AMP 3-4GHZ 8-MSOP |
产品分类 | RF 放大器 |
品牌 | Hittite Microwave Corporation |
数据手册 | 点击此处下载产品Datasheet |
产品图片 | |
P1dB | 27dBm |
产品型号 | HMC327MS8GE |
RF类型 | WLL,WLAN |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
供应商器件封装 | 8-MSOP |
其它名称 | 1127-1334 1127-1334-1 1127-1334-ND |
包装 | 剪切带 (CT) |
噪声系数 | 5dB |
增益 | 21dB |
封装/外壳 | 8-TSSOP,8-MSOP(0.118",3.00mm 宽) |
标准包装 | 1 |
测试频率 | 3.5GHz |
电压-电源 | 5V |
电流-电源 | 250mA |
频率 | 3GHz ~ 4GHz |
HMC327MS8G 327MS8GE / v06.1209 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features The HMC327MS8G(E) is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm • Access Points Single Supply: +5V 11 • Subscriber Equipment Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 T M S Functional Diagram General Description - S The HMC327MS8G(E) is a high efficiency GaAs R InGaP Heterojunction Bipolar Transistor (HBT) MMIC E power amplifi er which operates between 3 and 4 GHz. FI The amplifi er is packaged in a low cost, surface mo- I unt 8 leaded package with an exposed base for L P improved RF and thermal performance. With a mini- M mum of external components, the amplifi er provides A 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply. Power down capability R is available to conserve current consumption when the E amplifi er is not in use. W O P & R Electrical Specifi cations, T = +25 °C, Vs = 5V, Vctl = 5V A A E Parameter Min. Typ. Max. Units N Frequency Range 3 - 4 GHz I L Gain 17 21 24 dB Gain Variation Over Temperature 0.025 0.035 dB / °C Input Return Loss 15 dB Output Return Loss 8 dB Output Power for 1dB Compression (P1dB) 24 27 dBm Saturated Output Power (Psat) 30 dBm Output Third Order Intercept (IP3) 36 40 dBm Noise Figure 5 dB Supply Current (Icq) Vctl* = 0V/5V 0.002 / 250 mA Control Current (Ipd) Vctl* = 5V 7 mA Switching Speed tON, tOFF 40 ns *See Application Circuit for proper biasing confi guration. Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 11 - 2 rliicgehntss eo fi sth girrda nptaerdti ebsy t him2atp 0mlic aaAyt iorlenps uohlrt aofrto hmRer wiotsis aues deu.n, dS Cepre hcainfeiyc alpmtiaotnessn fts oourbr jpdeac,tte tnMot crAhigahn t0gs e1o wf 8Ait2hnoa4ulot gn oPDtiechveio.c eNnso.e : P9h7o8ne-:2 75801--33239-44370 0F (cid:127)a Oxr:d 9er7 o8n-li2ne5 a0t- w3w3w7.3analog.com Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D
HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 24 20 15 B) 16 d S21 NSE ( 5 SS1212 N (dB) 12 ++2855 CC SPO -5 GAI -40 C 11 RE 8 -15 4 -25 0 T 2 2.5 3 3.5 4 4.5 5 2.5 3 3.5 4 4.5 M FREQUENCY (GHz) FREQUENCY (GHz) S - S Input Return Loss vs. Temperature Output Return Loss vs. Temperature R 0 0 E I F +25 C OSS (dB) -1-05 +-4805 CC OSS (dB) --63 ++-428055 CCC MPLI RETURN L --2105 RETURN L -9 R A -12 E -25 W -30 -15 O 2.5 3 3.5 4 4.5 2.5 3 3.5 4 4.5 FREQUENCY (GHz) FREQUENCY (GHz) P & R P1dB vs. Temperature Psat vs. Temperature A 34 34 E N 30 30 I L m) 26 m) 26 P1dB (dB 22 ++2855 CC Psat (dB 22 ++2855 CC -40 C -40 C 18 18 14 14 2.5 3 3.5 4 4.5 2.5 3 3.5 4 4.5 FREQUENCY (GHz) FREQUENCY (GHz) Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties tha2t 0ma yA relpsuhlt faro mR itos uasde. ,S pCechifiecaltmionss fsoubrjedct, toM chAan g0e1 w8ith2ou4t nPotihceo. Nnoe : P9h7o8n-e2: 75801--332394-437 0 0F (cid:127)a Ox:r d9e7r o8n-l2in5e 0at- w33w7w3.analog.com 11 - 3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D
HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Power Compression @ 3.5 GHz Output IP3 vs. Temperature 48 44 E (%) 40 GPPoAauiEnt 39 A P B), 32 34 11 m), GAIN (d 1264 IP3 (dBm) 2249 ++-428055 CCC B d out ( 8 19 P T 0 14 M -5 -1 3 7 11 15 2.5 3 3.5 4 4.5 INPUT POWER (dBm) FREQUENCY (GHz) S - S R Noise Figure vs. Temperature Gain & Power vs. Supply Voltage E 10 28 32 I F LI 8 ++2855 CC 26 30 P dB) -40 C P1d ER AM NOISE FIGURE ( 246 GAIN (dB) 222024 P1dB 222468 B (dBm) & Psat (dBm W Psat ) Gain O 0 18 22 3 3.5 4 4.5 4.75 5 5.25 P FREQUENCY (GHz) Vcc SUPPLY VOLTAGE (V) & R A Reverse Isolation vs. Temperature Power Down Isolation E 0 0 N I -10 L -10 B) -20 ++2855 CC B) N (d -40 C N (d O O TI -30 TI -20 A A L L O O S -40 S I I -30 -50 -60 -40 2.5 3 3.5 4 4.5 2.5 3 3.5 4 4.5 FREQUENCY (GHz) FREQUENCY (GHz) Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 11 - 4 rliicgehntss eo fi sth girrda nptaerdti ebsy t him2atp 0mlic aaAyt iorlenps uohlrt aofrto hmRer wiotsis aues deu.n, dS Cepre hcainfeiyc alpmtiaotnessn fts oourbr jpdeac,tte tnMot crAhigahn t0gs e1o wf 8Ait2hnoa4ulot gn oPDtiechveio.c eNnso.e : P9h7o8ne-:2 75801--33239-44370 0F (cid:127)a Oxr:d 9er7 o8n-li2ne5 a0t- w3w3w7.3analog.com Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D
HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Absolute Maximum Ratings 30 250 Collector Bias Voltage (Vcc) +5.5V m) Control Voltage (Vpd) +5.5V B d 25 200 at ( RF Input Power (RFIN)(Vs = Vctl = +5V) +16 dBm s m), P 20 Icq 150 Junction Temperature 150 °C B Ic Continuous Pdiss (T = 85 °C) P1dB (d 15 100 q (mA) (Tdheerramtea 2l R9 emsWist/a°Cnc aebove 85 °C) 1.88 W 11 N (dB), 10 PPG1saadintB 50 (Sjutonrcatgioen T teom gproeurantdu rpeaddle) 3-645 ° tCo/ W+150 °C AI G Operating Temperature -40 to +85 °C 5 0 T 2.5 3 3.5 4 4.5 5 M Vctl (V) S ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS - S Outline Drawing R E I F I L P M A R E W O P & R A NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY E 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] N 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. I 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. L 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC327MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H327 XXXX HMC327MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H327 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties tha2t 0ma yA relpsuhlt faro mR itos uasde. ,S pCechifiecaltmionss fsoubrjedct, toM chAan g0e1 w8ith2ou4t nPotihceo. Nnoe : P9h7o8n-e2: 75801--332394-437 0 0F (cid:127)a Ox:r d9e7r o8n-l2in5e 0at- w33w7w3.analog.com 11 - 5 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D
HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Pin Descriptions Pin Number Function Description Interface Schematic Power Control Pin. For proper control bias, this pin should be con- 1 Vpd nected to 5V through a series resistor of 130 Ohms. A higher voltage is 11 not recommended. For lower idle current, this voltage can be reduced. Ground: Backside of package has exposed metal ground paddle that T 2, 4, 7 GND must be connected to ground thru a short path. Vias under the device M are required. S This pin is AC coupled 3 RFIN and matched to 50 Ohms. - S R RF output and bias for the output stage. The power supply for the 5, 6 RFOUT output device needs to be supplied to these pins. E I F I L Power supply voltage for the fi rst amplifi er stage. An external bypass P 8 Vcc capacitor of 330 pF is required. This capacitor should be placed as M close to the device as possible. A R Application Circuit E W O P & R A E N I L TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.038” 0.231” 0.1” Note: C3 should be located <0.020” from Pin 8 (Vcc) Note: C2 Should be located < 0.020” from L1 Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 11 - 6 rliicgehntss eo fi sth girrda nptaerdti ebsy t him2atp 0mlic aaAyt iorlenps uohlrt aofrto hmRer wiotsis aues deu.n, dS Cepre hcainfeiyc alpmtiaotnessn fts oourbr jpdeac,tte tnMot crAhigahn t0gs e1o wf 8Ait2hnoa4ulot gn oPDtiechveio.c eNnso.e : P9h7o8ne-:2 75801--33239-44370 0F (cid:127)a Oxr:d 9er7 o8n-li2ne5 a0t- w3w3w7.3analog.com Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D
HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Evaluation PCB 11 T M S - S R E I F I L P M A R E W O P & R List of Materials for Evaluation PCB 104991 [1] A The circuit board used in the application should E Item Description use RF circuit design techniques. Signal lines sho- N J1 - J2 PCB Mount SMA RF Connector J3 2 mm DC Header uld have 50 Ohm impedance while the package LI ground leads and exposed paddle should be con- C1 - C3 330 pF Capacitor, 0603 Pkg. nected directly to the ground plane similar to that C4 1.2 pF Capacitor, 0603 Pkg. shown. A sufficient number of via holes should be C5 2 pF Capacitor, 0402 Pkg. used to connect the top and bottom ground planes. C6 2.2 μF Capacitor, Tantalum The evaluation board should be mounted to an L1 3 nH Inductor, 0805 Pkg. appropriate heat sink. The evaluation circuit board R1 130 Ohm Resistor, 0603 Pkg. shown is available from Hittite upon request. U1 HMC327MS8G(E) Amplifi er PCB [2] 104829 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties tha2t 0ma yA relpsuhlt faro mR itos uasde. ,S pCechifiecaltmionss fsoubrjedct, toM chAan g0e1 w8ith2ou4t nPotihceo. Nnoe : P9h7o8n-e2: 75801--332394-437 0 0F (cid:127)a Ox:r d9e7r o8n-l2in5e 0at- w33w7w3.analog.com 11 - 7 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D