图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: HMC311SC70E
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

产品参数

参数 数值
产品目录 射频/IF 和 RFID
描述 IC GAIN BLOCK AMP SC70
产品分类 RF 放大器
品牌 Hittite Microwave Corporation
数据手册 点击此处下载产品Datasheet
产品图片
P1dB 11dBm
产品型号 HMC311SC70E
RF类型 通用
rohs 无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 -
供应商器件封装 SC-70-6
其它名称 1127-1018-1
包装 剪切带 (CT)
噪声系数 5dB
增益 13dB
封装/外壳 6-TSSOP,SC-88,SOT-363
标准包装 1
测试频率 -
电压-电源 5V
电流-电源 74mA
频率 0Hz ~ 8GHz

Datasheet

PDF Datasheet 数据手册内容提取

HMC311SC70 / 311SC70E v05.0517 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Typical Applications Features The HMC311SC70(E) is ideal for: P1dB Output Power: +15 dBm T • Cellular / PCS / 3G Output IP3: +30 dBm M • WiBro / WiMAX / 4G Gain: 15 dB S • Fixed Wireless & WLAN Cascadable, 50 Ohm I/O’s - S • CATV & Cable Modem Single Supply: +5V R • Microwave Radio & Test Equipment Industry Standard SC70 Package E I F Functional Diagram General Description I L P The HMC311SC70(E) is a GaAs InGaP Heterojunction M Bipolar Transistor (HBT) Gain Block MMIC SMT A DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either K C a cascadable 50 Ohm gain stage or to drive the LO O port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an L B output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in N reduced sensitivity to normal process variations, and I A yields excellent gain stability over temperature while G requiring a minimal number of external bias & components. R E V Electrical Specifications, Vs= 5V, Rbias= 22 Ohm, T = +25° C A I R Parameter Min. Typ. Max. Units D DC - 1.0 GHz 14.0 15.0 dB 1.0 - 4.0 GHz 13.0 15.0 dB Gain 4.0 - 6.0 GHz 12.5 14.5 dB 6.0 - 8.0 GHz 11.0 13.0 dB DC - 1.0 GHz 0.004 0.007 dB/ °C 1.0 - 4.0 GHz 0.007 0.012 Gain Variation Over Temperature dB/ °C 4.0 - 6.0 GHz 0.012 0.016 dB/ °C 6.0 - 8.0 GHz 0.018 0.022 Return Loss Input / Output DC - 8.0 GHz 15 dB Reverse Isolation DC - 8.0 GHz 18 dB DC - 2.0 GHz 13.5 15.5 dBm 2.0 - 4.0 GHz 12.0 15.0 dBm Output Power for 1 dB Compression (P1dB) 4.0 - 6.0 GHz 10.0 13.0 dBm 6.0 - 8.0 GHz 8.0 11.0 dBm DC - 2.0 GHz 30 dBm Output Third Order Intercept (IP3) 2.0 - 6.0 GHz 27 dBm 6.0 - 8.0 GHz 24 dBm Noise Figure DC - 8.0 GHz 5 dB Supply Current (Icq) 55 74 mA Note: Data taken with broadband bias tee on device output. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaayt iroens uolrt fortohme riwtsi sues eu.n Sdpeer caifinyc aptiaotnesn ts ourb jpeactte tnot crhigahntgs eo wf Aitnhaoluotg n oDteicveic. eNso. Phone: 781-329-4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D

HMC311SC70 / 311SC70E v05.0517 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 15 18 T 10 16 M NSE (dB) 05 N (dB) 1124 S SPO -5 GAI 10 - RE-10 S 8 -15 R -20 6 E -25 4 I 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 F FREQUENCY (GHz) FREQUENCY (GHz) LI P +25 C -40 C +85 C S21 S11 S22 M A Input Return Loss vs. Temperature Output Return Loss vs. Temperature K C 0 0 O L B) -5 B) -5 B OSS (d OSS (d N URN L-10 URN L-10 AI RET-15 RET-15 G & -20 -20 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 R FREQUENCY (GHz) FREQUENCY (GHz) E V +25 C +85 C -40 C +25 C +85 C -40 C I R D Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 dB) -5 8 ATION (-10 RE (dB) 6 L U O G SE IS-15 SE FI 4 VER NOI RE-20 2 -25 0 0 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 FREQUENCY (GHz) FREQUENCY (GHz) +25 C +85 C -40 C +25C +85C -40C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 2 Application Support: Phone: 1-800-ANALOG-D

HMC311SC70 / 311SC70E v05.0517 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz P1dB vs. Temperature Psat vs. Temperature 20 20 T 16 16 M - S P1dB (dBm) 182 Psat (dBm) 182 S R 4 4 E I 0 0 F 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 LI FREQUENCY (GHz) FREQUENCY (GHz) P +25 C +85 C -40 C +25 C +85 C -40 C M A K Power Compression @ 1 GHz Power Compression @ 6 GHz C 18 18 O %) 16 %) 16 L E ( 14 E ( 14 B PA 12 PA 12 N N (dB), 180 N (dB), 180 I GAI 6 GAI 6 A m), 4 m), 4 G Pout (dB 02 Pout (dB 02 & -2 -2 -4 -4 R -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 E INPUT POWER (dBm) INPUT POWER (dBm) V Pout Gain PAE Pout Gain PAE I R D Gain, Power, IP3 & Supply Current vs. Output IP3 vs. Temperature Supply Voltage @ 1 GHz 34 m) 40 80 32 B d 30 3 ( 35 P 2268 m), OI 30 60 IP3 (dBm) 12228024 Bm), Psat (dB 122505 40 Icq (mA) 16 B (d 10 20 14 d 1 11020 1 2 3 4 5 6 7 8 N (dB), P 05 0 AI 4.5 4.75 5 5.25 5.5 FREQUENCY (GHz) G Vs (V) +25 C +85 C -40 C GP1adinB POsIPat3 Icq For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 3 Application Support: Phone: 1-800-ANALOG-D

HMC311SC70 / 311SC70E v05.0517 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) +7V ELECTROSTATIC SENSITIVE DEVICE RF Input Power (RFIN)(Vcc = +3.9V) +10 dBm T Junction Temperature 150 °C OBSERVE HANDLING PRECAUTIONS M Continuous Pdiss (T = 85 °C) S 0.34 W (derate 5.21 mW/°C above 85 °C) - Thermal Resistance 191 °C/W S (junction to lead) R Storage Temperature -65 to +150 °C E Operating Temperature -40 to +85 °C I Class1A, F ESD Sensitivity (HBM) Passed 250V I L P Outline Drawing M A K C O L B N I A G & R E V I R D NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 3. LEAD PLATING: Sn/Pb 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking HMC311SC70 Low Stress Injection Molded Plastic Sn/Pb MSL1 [1] 311 HMC311SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 311E [1] Max peak reflow temperature of 235°C [2] Max peak reflow temperature of 260°C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 4 Application Support: Phone: 1-800-ANALOG-D

HMC311SC70 / 311SC70E v05.0517 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Pin Descriptions T Pin Number Function Description Interface Schematic M S 1, 2, 4, 5 GND These pins must be connected to RF/DC ground. - S R E This pin is DC coupled. 3 RFIN An off chip DC blocking capacitor is required. I F I L P M A 6 RFOUT RF output and DC Bias for the output stage. K C Application Circuit O L B N I A G & R E V RI Note: 1. Select Rbias to achieve Icq using equation below, D Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.8 Rbias Recommended Component Values Frequency (MHz) Component 50 900 1900 2200 2400 3500 5200 5800 L1 270 nH 56 nH 22 nH 22 nH 15 nH 8.2 nH 3.3 nH 3.3 nH C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 5 Application Support: Phone: 1-800-ANALOG-D

HMC311SC70 / 311SC70E v05.0517 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Evaluation PCB T M S - S R E I F I L P M A K C O L B N I A G & R E V I R D List of Materials for Evaluation PCB 118040 [1] The circuit board used in the final application should Item Description use RF circuit design techniques. Signal lines J1 - J2 PCB Mount SMA Connector should have 50 Ohm impedance while the package J3 - J4 DC Pin ground leads should be connected directly to the C1 - C3 100 pF Capacitor, 0402 Pkg. ground plane similar to that shown. A sufficient C4 1000 pF Capacitor, 0603 Pkg. number of via holes should be used to connect C5 2.2 µF Capacitor, Tantalum the top and bottom ground planes. The evaluation R1 22 Ohm Resistor, 1210 Pkg. board should be mounted to an appropriate heat L1 22 nH Inductor, 0603 Pkg. sink. The evaluation circuit board shown is available U1 HMC311SC70 / HMC311SC70E from Analog Devices upon request. PCB [2] 117360 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 6 Application Support: Phone: 1-800-ANALOG-D