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HMC221AE产品简介:
ICGOO电子元器件商城为您提供HMC221AE由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC221AE价格参考。HittiteHMC221AE封装/规格:RF 开关, 射频开关 IC 通用 SPDT 3GHz 50 欧姆 SOT-26。您可以下载HMC221AE参考资料、Datasheet数据手册功能说明书,资料中有HMC221AE 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | IC SWITCH SPDT SOT26 |
产品分类 | |
IIP3 | 43dBm (标准) |
品牌 | Hittite Microwave Corporation |
数据手册 | |
产品图片 | |
P1dB | 29dBm (标准) IP1dB |
产品型号 | HMC221AE |
RF类型 | 通用 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
供应商器件封装 | SOT-26 |
其它名称 | 1127-1006-1 |
包装 | 剪切带 (CT) |
封装/外壳 | SOT-23-6 |
工作温度 | -40°C ~ 105°C |
拓扑 | 反射 |
插损@频率 | 0.8dB @ 3GHz |
标准包装 | 1 |
特性 | - |
电压-电源 | 3 V ~ 8 V |
电路 | SPDT |
配用 | /product-detail/zh/101675-HMC221A/1127-1082-ND/3588495 |
阻抗 | 50 欧姆 |
隔离@频率 | 18dB @ 3GHz (标准) |
频率 -上 | 3GHz |
频率 -下 | DC |
HMC221A / 221AE v02.0911 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Typical Applications Features the hMc221A(e) is ideal for: RohS-compliant Product t • ISM Applications Low insertion Loss: 0.4 dB M • PCMCIA Wireless Cards Ultra Small Package: SOt26 S • Cellular Applications input iP3: +45 dBm - t Positive control: 0/+3V @ 3 µA D included in the hMc-DK005 Designer’s Kits P S Functional Diagram General Description - S the hMc221A(e) is a low-cost SPDt switch in e a 6-lead SOt26 plastic package for use in gen- h eral switching applications which require very low c insertion loss and very small size. this device t can control signals from Dc to 3 Ghz and is i w especially suited for 900 Mhz, 1.8 - 2.2 Ghz, and 2.4 Ghz iSM applications with less than 1 dB loss. S the design provides exceptional insertion loss perfor- mance, ideal for filter and receiver switching. RF1 and RF2 are reflective shorts when “Off”. the two control voltages require a minimal amount of Dc current and offer compatibility with most cMOS & ttL logic fami- lies. See hMc197A(e) for same performance in an alternate SOt26 pin-out. Electrical Specifications, T = +25° C, Vctl = 0/+3 to +8 Vdc A Parameter Frequency Min. typ. Max. Units Dc - 1.0 Ghz 0.4 0.7 dB Dc - 2.0 Ghz 0.45 0.8 dB insertion Loss Dc - 2.5 Ghz 0.6 0.9 dB Dc - 3.0 Ghz 0.8 1.1 dB Dc - 1.0 Ghz 24 28 dB Dc - 2.0 Ghz 24 28 dB isolation Dc - 2.5 Ghz 21 25 dB Dc - 3.0 Ghz 14 18 dB Dc - 1.0 Ghz 20 23 dB Dc - 2.0 Ghz 17 22 dB Return Loss Dc - 2.5 Ghz 16 20 dB Dc - 3.0 Ghz 11 15 dB input Power for 1 dB compression 0.5 - 1.0 Ghz 25 30 dBm (Vctl = 0/+5V) 0.5 - 3.0 Ghz 23 29 dBm input third Order intercept 0.5 - 1.0 Ghz 40 45 dBm (Vctl = 0/+5V) (two-tone input Power = +7 dBm each tone) 0.5 - 3.0 Ghz 38 43 dBm Switching characteristics Dc - 3.0 Ghz tRiSe, tFALL (10/90% RF) 3 ns tON, tOFF (50% ctL to 10/90% RF) 10 ns For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 1 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC221A / 221AE v02.0911 GAAS MMIC SOT26 SPDT SWITCH, DC - 3 GHz Insertion Loss Isolation 0 0 -0.5 -10 t B) OSS (d -1 N (dB) -20 SM SERTION L-1-.52 ISOLATIO -30 t - N D I -40 -2.5 P S -3 -50 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 - FREQUENCY (GHz) FREQUENCY (GHz) S Input 0.1 and 1.0 dB e Return Loss Compression vs. Control Voltage h c 0 35 1 dB at 1900 MHz t i -10 1 dB at 900 MHz w OSS (dB) -20 1dB (dBm) 30 S RETURN L -30 P1dB & P0. 2205 0.1 dB at 900 MHz -40 0.1 dB at 1900 MHz -50 15 0 0.5 1 1.5 2 2.5 3 3 4 5 6 7 8 9 FREQUENCY (GHz) CONTROL INPUT (V) Input Third Order Distortion vs. Control Voltage Intercept Point vs. Control Voltage 54 control input third Order intercept (dBm) +7 dBm each tone (Vdc) 900 Mhz 1900 Mhz 52 +3 51 48 +5 51 49 m) 50 +8 51 50 B d 3 ( IP 48 Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc. 900 MHz 46 1900 MHz control input* control current Signal Path State A B ia ib RF to RF to 44 (Vdc) (Vdc) (µA) (µA) RF1 RF2 2 3 4 5 6 7 8 9 CONTROL INPUT (V) 0 +3 -3 3 ON OFF +3 0 3 -3 OFF ON 0 +5 -5 5 ON OFF +5 0 5 -5 OFF ON 0 +8 -32 32 ON OFF +8 0 32 -32 OFF ON For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC221A / 221AE v02.0911 GAAS MMIC SOT26 SPDT SWITCH, DC - 3 GHz Compression vs. Control Voltage Absolute Maximum Ratings carrier at 900 Mhz carrier at 1900 Mhz control Voltage Range (A & B) -0.2 to +12 Vdc t input Power input Power input Power input Power channel temperature 150 °c control M input for 0.1 dB for 1 dB for 0.1 dB for 1.0 dB continuous Pdiss (t = 85 °c) compression compression compression compression 0.36 w (derate 5.6 mw/°c above 85 °c) S (Vdc) (dBm) (dBm) (dBm) (dBm) thermal Resistance 178 °c/w - +3 21 24 21 24 Storage temperature -65 to +150 °c t +5 28 30 27 30 D Operating temperature -40 to +105 °c +8 32 34 31 33 P eSD Sensitivity (hBM) class 1A caution: Do not operate in 1dB compression at power levels above S +31 dBm (Vctl = +5 Vdc) and do not “hot switch” power levels - greater than +20 dBm (Vctl = +5Vdc). Dc blocks are required at eLectROStAtic SeNSitiVe DeVice S ports RFc, RF1 and RF2. OBSeRVe hANDLiNG PRecAUtiONS e h c Outline Drawing t i w S NOteS: 1. LeADFRAMe MAteRiAL: cOPPeR ALLOY 2. DiMeNSiONS ARe iN iNcheS [MiLLiMeteRS]. 3. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.15mm PeR SiDe. 4. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.25mm PeR SiDe. 5. ALL GROUND LeADS MUSt Be SOLDeReD tO PcB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking hMc221A Low Stress injection Molded Plastic Sn/Pb Solder MSL1 [1] 221A XXXX hMc221Ae RohS-compliant Low Stress injection Molded Plastic 100% matte Sn MSL1 [2] 221Ae XXXX [1] Max peak reflow temperature of 235 °c [2] Max peak reflow temperature of 260 °c For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 3 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC221A / 221AE v02.0911 GAAS MMIC SOT26 SPDT SWITCH, DC - 3 GHz Typical Application Circuit Notes: t 1. Set logic gate and switch Vdd = +3V to +5V and use hct series M logic to provide a ttL driver interface. S 2. control inputs A/B can be driven directly with cMOS logic (hc) - with Vdd of 5 to 8 Volts applied to the cMOS logic gates. t 3. Dc Blocking capacitors are required for each RF port as shown. D capacitor value determines lowest frequency of operation. P 4. highest RF signal power capability is achieved with Vdd = +8V S and A/B set to 0/+8V. - S e h c Evaluation Circuit Board t i w S List of Materials for Evaluation PCB 101675 [1] the circuit board used in the application should item Description be generated with proper RF circuit design tech- J1 - J3 PcB Mount SMA RF connector niques. Signal lines at the RF port should have J4 - J7 Dc Pin 50 Ohm impedance and the package ground leads c1 - c3 330 pF capacitor, 0402 Pkg. and package bottom should be connected directly U1 hMc221A / hMc221Ae SPDt Switch to the ground plane similar to that shown above. PcB [2] 101659 evaluation PcB the evaluation circuit board shown above is avail- [1] Reference this number when ordering complete evaluation PcB able from hittite Microwave corporation upon [2] circuit Board Material: Rogers 4350 request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 Application Support: Phone: 978-250-3343 or apps@hittite.com