ICGOO在线商城 > 集成电路(IC) > PMIC - 栅极驱动器 > HIP4086AB
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HIP4086AB产品简介:
ICGOO电子元器件商城为您提供HIP4086AB由Intersil设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HIP4086AB价格参考。IntersilHIP4086AB封装/规格:PMIC - 栅极驱动器, Half-Bridge Gate Driver IC Inverting, Non-Inverting 24-SOIC。您可以下载HIP4086AB参考资料、Datasheet数据手册功能说明书,资料中有HIP4086AB 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC) |
描述 | IC DRIVER 3-PHASE FET 24-SOIC |
产品分类 | PMIC - MOSFET,电桥驱动器 - 外部开关 |
品牌 | Intersil |
数据手册 | |
产品图片 | |
产品型号 | HIP4086AB |
rohs | 含铅 / 不符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=25593 |
产品目录页面 | |
供应商器件封装 | 24-SOIC |
包装 | 管件 |
安装类型 | 表面贴装 |
封装/外壳 | 24-SOIC(0.295",7.50mm 宽) |
工作温度 | -40°C ~ 125°C |
延迟时间 | 65ns |
标准包装 | 30 |
电压-电源 | 7 V ~ 15 V |
电流-峰值 | 500mA |
输入类型 | 反相和非反相 |
输出数 | 3 |
配置 | 3 相桥 |
配置数 | 1 |
高压侧电压-最大值(自举) | 95V |
DATASHEET HIP4086, HIP4086A FN4220 80V, 500mA, 3-Phase MOSFET Driver Rev 1.00 January 12, 2017 The HIP4086 and HIP4086A (referred to as the HIP4086/A) Features are 3-phase N-channel MOSFET drivers. Both parts are specifically targeted for PWM motor control. These drivers • Independently drives 6 N-channel MOSFETs in 3-phase have flexible input protocol for driving every possible switch bridge configuration combination. The user can even override the shoot-through • Bootstrap supply maximum voltage up to 95VDC with bias protection for switched reluctance applications. supply from 7V to 15V The HIP4086/A have a wide range of programmable dead • 1.25A peak turn-off current times (0.5µs to 4.5µs) which makes them very suitable for the • User programmable dead time (0.5µs to 4.5µs) low frequencies (up to 100kHz) typically used for motor drives. • Bootstrap and optional charge pump maintain the high-side The only difference between the HIP4086 and the HIP4086A driver bias voltage. is that the HIP4086A has the built-in charge pumps disabled. • Programmable bootstrap refresh time This is useful in applications that require very quiet EMI performance (the charge pumps operate at 10MHz). The • Drives 1000pF load with typical rise time of 20ns and fall advantage of the HIP4086 is that the built-in charge pumps time of 10ns allow indefinitely long on times for the high-side drivers. • Programmable undervoltage set point To insure that the high-side driver boot capacitors are fully Applications charged prior to turning on, a programmable bootstrap refresh pulse is activated when VDD is first applied. When active, the • Brushless Motors (BLDC) refresh pulse turns on all three of the low-side bridge FETs • 3-phase AC motors while holding off the three high-side bridge FETs to charge the high-side boot capacitors. After the refresh pulse clears, • Switched reluctance motor drives normal operation begins. • Battery powered vehicles Another useful feature of the HIP4086/A is the programmable • Battery powered tools undervoltage set point. The set point range varies from 6.6V to Related Literature 8.5V. •AN9642, “HIP4086 3-Phase Bridge Driver Configurations TABLE 1. KEY DIFFERENCES BETWEEN FAMILY OF PARTS and Applications” CHARGE •AN1829, “HIP4086 3-Phase BLDC Motor Drive PART NUMBER PUMP Demonstration Board, User Guide” HIP4086 Yes HIP4086A No VDD 200 VDD CHB RDEL ABHHBB VxHB - VxHS = 10V AHO µA) 150 Speed Controller ABALHHIII HIP4086/A CBCABHHHHHOOSSS 24BVa.t.t.e4r8yV RRENT ( Brake BCLHII CU 100 CLI VSS T ALO PU BLO T CLO U O 50 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) FIGURE 1. TYPICAL APPLICATION FIGURE 2. CHARGE PUMP OUTPUT CURRENT FN4220 Rev 1.00 Page 1 of 17 January 12, 2017
HIP4086, HIP4086A Block Diagram (for clarity, only one phase is shown) IDf IuSn idse arsvsoeltratgede ,i sth aec htiivgeh oarn idf DRIVE ENABLE COMMON WITH VDD CPHUAMRPG*E 16 xHB low-side drivers are turned off. ALL PHASES EN xHI 5 ADJUSTABLE TURN-ON DIS 10 10ns DELAY SLHEIFVTEELR 17 xHO DELAY VDD 20 *The charge pump is UNDERVOLTAGE permanently disabled 18 xHS DETECTOR in the HIP4086A. UVLO 8 RFSH 9 REPUFRLESSEH DELAY DISABLE CAOLMLM POHNA SWEITSH VDD COMMON WITH ALL ADJUSTABLE PHASES TURN-ON 21 xLO DELAY xLI 4 RDEL 7 COMMON WITH 6 VSS ALL PHASES 2µs Delay If the voltage on RDEL is less than 100mV, the 100mV turn-on delay timers are disabled and the high and low-side drivers can be turned on simultaneously. FIGURE 3. BLOCK DIAGRAM Truth Table INPUT OUTPUT ALI, BLI, CLI AHI, BHI, CHI UV DIS RDEL ALO, BLO, CLO AHO, BHO, CHO X X X 1 X 0 0 X X 1 X X 0 0 1 X 0 0 >100mV 1 0 0 0 0 0 X 0 1 0 1 0 0 X 0 0 1 0 0 0 <100mV 1 1 NOTE: X signifies that input can be either a “1” or “0”. FN4220 Rev 1.00 Page 2 of 17 January 12, 2017
HIP4086, HIP4086A Pin Configuration HIP4086, HIP4086A (24 LD PDIP, SOIC) TOP VIEW BHB 1 24 BHO BHI 2 23 BHS BLI 3 22 BLO ALI 4 21 ALO AHI 5 20 VDD VSS 6 19 CLO RDEL 7 18 AHS UVLO 8 17 AHO RFSH 9 16 AHB DIS 10 15 CHS CLI 11 14 CHO CHI 12 13 CHB Pin Descriptions PIN NUMBER SYMBOL DESCRIPTION 16 AHB High-Side Bias Connections. One external bootstrap diode and one capacitor are required for 1 BHB each. Connect cathode of bootstrap diode and positive side of bootstrap capacitor to each xHB 13 CHB pin. (xHB) 18 AHS High-Side Source Connections. Connect the sources of the high-side power MOSFETs to these 23 BHS pins. The negative side of the bootstrap capacitors are also connected to these pins. 15 CHS (xHS) 5 AHI High-Side Logic Level Inputs. Logic at these three pins controls the three high-side output drivers, 2 BHI AHO (Pin 17), BHO (Pin 24) and CHO (Pin 14). When xHI is low, xHO is high. When xHI is high, 12 CHI xHO is low. Unless the dead time is disabled by connecting RDEL (Pin 7) to ground, the low-side (xHI) input of each phase will override the corresponding high-side input on that phase - see “Truth Table” on page2. If RDEL is tied to ground, dead time is disabled and the outputs follow the inputs with no shoot-through protection. DIS (Pin 10) also overrides the high-side inputs. xHI can be driven by signal levels of 0V to 15V (no greater than VDD). 4 ALI Low-Side Logic Level Inputs. Logic at these three pins controls the three low-side output drivers 3 BLI ALO (Pin 21), BLO (Pin 22) and CLO (Pin 19). If the upper inputs are grounded then the lower 11 CLI inputs control both xLO and xHO drivers, with the dead time set by the resistor at RDEL (Pin 7). (xLI) DIS (Pin 10) high level input overrides xLI, forcing all outputs low. xLI can be driven by signal levels of 0V to 15V (no greater than VDD). 6 VSS Ground. Connect the sources of the low-side power MOSFETs to this pin. 7 RDEL Delay Time Set Point. Connect a resistor from this pin to VDD to set timing current that defines the dead time between drivers - see Figure19 on page10. All drivers turn off with minimal delay, RDEL resistor prevents shoot-through by delaying the turn-on of all drivers. When RDEL is tied to VSS, both upper and lowers can be commanded on simultaneously. While not necessary in most applications, a decoupling capacitor of 0.1µF or smaller may be connected between RDEL and VSS. 8 UVLO Undervoltage Set Point. A resistor can be connected between this pin and VSS to program the undervoltage set point - see Figure20 on page10. With this pin not connected, the under voltage disable is typically 6.6V. When this pin is tied to VDD, the under voltage disable is typically 6.2V. 9 RFSH Refresh Pulse Setting. An external capacitor can be connected from this pin to VSS to increase the length of the start up refresh pulse - see Figure18 on page9. If this pin is not connected, the refresh pulse is typically 1.5µs. FN4220 Rev 1.00 Page 3 of 17 January 12, 2017
HIP4086, HIP4086A Pin Descriptions (Continued) PIN NUMBER SYMBOL DESCRIPTION 10 DIS Disable Input. Logic level input that when taken high sets all six outputs low. DIS high overrides all other inputs. With DIS low, the outputs are controlled by the other inputs. DIS can be driven by signal levels of 0V to 15V (no greater than VDD). 17 AHO High-Side Outputs. Connect to the gates of the high-side power MOSFETs in each phase. 24 BHO 14 CHO (xHO) 20 VDD Positive Supply. Decouple this pin to VSS (Pin 6). 21 ALO Low-Side Outputs. Connect the gates of the low-side power MOSFETs to these pins. 22 BLO 19 CLO (xLO) NOTE: x = A, B or C. Ordering Information PART NUMBER PART TEMP RANGE CHARGE PKG. (Note3) MARKING (°C) PUMP PACKAGE DWG. # HIP4086AB (Note1) HIP4086AB -40 to +125 Yes 24 Ld SOIC M24.3 HIP4086ABZ (Notes1, 2) HIP4086ABZ -40 to +125 Yes 24 Ld SOIC (RoHS Compliant) M24.3 HIP4086APZ (Note2) HIP4086APZ -40 to +125 Yes 24 Ld PDIP (RoHS Compliant) E24.3 HIP4086AABZ (Notes1, 2) HIP4086AABZ -40 to +125 No 24 Ld SOIC (RoHS Compliant) M24.3 HIP4086DEMO1Z HIP4086 Demonstration Board NOTES: 1. Add “T”, suffix for 1k unit tape and reel option. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), please see device information page for HIP4086, HIP4086A. For more information on MSL, please see Technical Brief TB363. FN4220 Rev 1.00 Page 4 of 17 January 12, 2017
HIP4086, HIP4086A Absolute Maximum Ratings Thermal Information (Note7) Supply Voltage, VDD Relative to GND. . . . . . . . . . . . . . . . . . . . . -0.3V to 16V Thermal Resistance (Typical) JA (°C/W) JC (°C/W) Logic Inputs (xLI, xHI). . . . . . . . . . . . . . . . . . . . . (GND - 0.3V) to VDD + 0.3V SOIC Package (Notes4, 6) . . . . . . . . . . . . . 75 22 Voltage on xHS . . . . . . . . . . . . . . -6V (Transient) to 85V (-40°C to +150°C) SOIC Package HIP4086AABZ (Notes5, 6) 51 22 Voltage on xHB . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VxHS - 0.3V) to VxHS +VDD PDIP* Package (Notes4, 6) . . . . . . . . . . . . 70 29 Voltage on xLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VSS - 0.3V) to VDD +0.3V Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Voltage on xHO . . . . . . . . . . . . . . . . . . . . . . . . . . . (VxHS - 0.3V) to VxHB +0.3V Operating Junction Temp Range . . . . . . . . . . . . . . . . . . . .-40°C to +150°C Phase Slew Rate (on xHS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493 Maximum Recommended Operating *Pb-free PDIPs can be used for through-hole wave solder processing only. They are not intended for use in Reflow solder processing applications. Conditions Supply Voltage, VDD Relative to GND. . . . . . . . . . . . . . . . . . . . . . . 7V to 15V Logic Inputs (xLI, xHI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to VDD Voltage on xHB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VxHS + VDD Voltage on xHS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 80V Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +150°C RDEL range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10kΩ to 100kΩ CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 4. JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 5. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 6. For JC, the “case temp” location is taken at the package top center. 7. Replace x with A, B, or C. DC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, RDEL = 20k, RUV = , Gate Capacitance (CGATE) = 1000pF, unless otherwise specified. Boldfacelimits apply across the operating junction temperature range, -40°C to +150°C. TJ = +25°C TJ = -40°C TO +150°C MIN MAX MIN MAX PARAMETER TEST CONDITIONS (Note9) TYP (Note9) (Note9) (Note9) UNIT SUPPLY CURRENTS VDD Quiescent Current xHI = 5V, xLI = 5V (HIP4086) 2.7 3.4 5.1 1.96 5.3 mA xHI = 5V, xLI = 5V (HIP4086A) 2.3 2.8 3.1 1.8 3.3 mA VDD Operating Current f = 20kHz, 50% Duty Cycle (HIP4086) 5.4 8.25 13 4 13.5 mA f = 20kHz, 50% Duty Cycle (HIP4086A) 3.1 4.0 4.6 2.7 5.1 mA xHB On Quiescent Current xHI = 0V (HIP4086) - 40 110 - 140 µA xHI = 0V (HIP4086A) - 90 115 - 225 µA xHB Off Quiescent Current xHI = VDD (HIP4086) 0.6 0.8 1.3 0.5 1.4 mA xHI = VDD (HIP4086A) 0.8 1.0 1.2 0.7 1.25 mA xHB Operating Current f = 20kHz, 50% Duty Cycle (HIP4086) 0.7 0.9 1.3 - 2.0 mA f = 20kHz, 50% Duty Cycle (HIP4086A) 0.8 0.9 1.1 - 1.25 mA xHB, xHS Leakage Current VxHS = 80V, VxHB = 93V 7 30 45 - 50 µA Charge Pump, HIP4086 Only, (Note8) QPUMP Output Voltage No Load 11 12.5 14.6 10 14.75 V QPUMP Output Current VxHS = 12V, VxHB = 22V 40 100 160 - 185 µA UNDERVOLTAGE PROTECTION VDD Rising Undervoltage Threshold RUV open 6.2 7.1 8.0 6.1 8.1 V VDD Falling Undervoltage Threshold RUV open 5.75 6.6 7.5 5.6 7.6 V Minimum Undervoltage Threshold RUV = VDD 5 6.2 6.8 4.8 6.9 V FN4220 Rev 1.00 Page 5 of 17 January 12, 2017
HIP4086, HIP4086A DC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, RDEL = 20k, RUV = , Gate Capacitance (CGATE) = 1000pF, unless otherwise specified. Boldfacelimits apply across the operating junction temperature range, -40°C to +150°C. (Continued) TJ = +25°C TJ = -40°C TO +150°C MIN MAX MIN MAX PARAMETER TEST CONDITIONS (Note9) TYP (Note9) (Note9) (Note9) UNIT INPUT PINS: ALI, BLI, CLI, AHI, BHI, CHI, AND DIS Low Level Input Voltage - - 1.0 - 0.8 V High Level Input Voltage 2.5 - - 2.7 - V Input Voltage Hysteresis - 35 - - - mV Low Level Input Current VIN = 0V -60 -100 -155 -55 -165 µA High Level Input Current VIN = 5V -1 - +1 -10 +10 µA GATE DRIVER OUTPUT PINS: ALO, BLO, CLO, AHO, BHO, AND CHO Low Level Output Voltage (VOUT - VSS) ISINKING = 30mA - 100 - - 210 mV Peak Turn-On Current VOUT = 0V 0.3 0.5 0.7 - 1.0 A NOTES: 8. The specified charge pump current is the total amount available to drive external loads across xHO and xHS. 9. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. AC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, CGATE = 1000pF, RDEL = 10k, unless otherwise specified. Boldface limits apply across the operating junction temperature range, -40°C to +150°C. TJ = +25°C TJ = -40°C TO +150°C MIN MAX MIN MAX PARAMETER TEST CONDITIONS (Note9) TYP (Note9) (Note9) (Note9) UNIT TURN-ON DELAY AND PROPAGATION DELAY Dead Time (Figure4) RDEL = 100kΩ 3 4.5 7.2 3 8 µs RDEL = 10kΩ 0.38 0.5 0.75 0.3 0.8 µs Dead Time Channel Matching RDEL = 10kΩ - 7 15 - 20 % Lower Turn-Off Propagation Delay No load - 30 55 - 75 ns (xLI to xLO Turn-Off) (Figures4 or 5) Upper Turn-Off Propagation Delay No load - 75 110 - 135 ns (xHI to xHO Turn-Off) (Figures4 or 5) Lower Turn-On Propagation Delay No load - 45 82 - 100 ns (xLI to xLO Turn-On) (Figures4 or 5) Upper Turn-On Propagation Delay No load - 65 110 - 158 ns (xHI to xHO Turn-On) (Figures4 or 5) Rise Time CGATE = 1000pF - 20 40 - 60 ns Fall Time CGATE = 1000pF - 10 20 - 40 ns Disable Lower Turn-Off Propagation Delay - 55 80 - 104 ns (DIS to xLO turn-off) (Figure6) Disable Upper Turn-Off Propagation Delay - 80 116 - 147 ns (DIS to xHO turn-off) (Figure6) Disable to Lower Turn-On Propagation Delay - 55 85 - 120 ns (DIS to xLO turn-on) (Figure6) Disable to Upper Turn-On Propagation Delay RDEL = 10kΩ, CRFSH - 2.0 - - - µs (DIS to xHO turn-on) (Figure6) open FN4220 Rev 1.00 Page 6 of 17 January 12, 2017
HIP4086, HIP4086A Test Waveforms and Timing Diagrams xLI to xLO xLI to xLO xLI to xLO xLI to xHO turn-off turn-on turn-off turn-off + delay xLI xHI xLO xHO xHI to xHO Dead Dead xHI to xHO turn-on time time turn-off + delay FIGURE 4. PROPAGATION DELAYS WITH PROGRAMMED TURN-ON DELAYS (RDEL CONNECTED TO VDD WITH A RESISTOR) xLI to xLO xLI to xLO xLI to xLO xLI to xLO turn-off turn-on turn-off turn-on xLI xHI xLO xLO and xHO are on simulateously xHO xHI to xHO xHI to xHO xHI to xHO turn-on turn-off turn-on FIGURE 5. PROPAGATION DELAYS WITH NO PROGRAMMED TURN-ON DELAYS (RDEL CONNECTED TO VSS) DIS to xLO DIS to xHO DIS to xLO turn-on turn-off turn-on delay delay delay DIS refresh pulse refresh pulse or UV xHI, xLI xLO xHO xHO turn-on delay FIGURE 6. DISABLE FUNCTION FN4220 Rev 1.00 Page 7 of 17 January 12, 2017
HIP4086, HIP4086A Typical Performance Curves 6 30 VDD = 16V ALL GATE CONTROL INPUTS = 5V CGATE = 1000pF A) A) 200kHz m 5 m 25 T ( VDD = 15V T ( N N E E 100kHz RR VDD = 12V RR CU 4 CU 20 50kHz Y Y PL VDD = 10V PL P P U U SDD3 VDD = 8V SDD15 2100kkHHzz V V VDD = 7V 2 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) FIGURE 7. VDD SUPPLY CURRENT vs VDD SUPPLY VOLTAGE FIGURE 8. VDD SUPPLY CURRENT vs SWITCHING FREQUENCY 4000 1.8 VDD = 15V A) TJ = +25°C 1.6 µ NT ( 3000 A) RRE CGATE = 1000pF T (m 1.4 U N C E NG BIAS 2000 AS CURR 11..02 VVDDDD = = 1 08VV ATI 1000 BI VDD = 7V VDD = 12V O FL CGATE = NO LOAD 0.8 0 0.6 0 20 40 60 80 100 120 140 160 180 200 -60 -40 -20 0 20 40 60 80 100 120 140 160 SWITCHING FREQUENCY (kHz) JUNCTION TEMPERATURE (°C) FIGURE 9. FLOATING IXHB BIAS CURRENT FIGURE 10. OFF-STATE IXHB BIAS CURRENT 200 14 V) VxHB - VxHS = 10V E ( 13 VDD = 15V G µA) 150 OLTA 12 VDD = 10V VDD = 12V RRENT ( 100 UTPUT V 1110 U O UT C MP 9 VDD = 8V P U T P U 50 E 8 O RG VDD = 7V HA 7 C 0 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) FIGURE 11. CHARGE PUMP OUTPUT CURRENT (HIP4086 only) FIGURE 12. CHARGE PUMP OUTPUT VOLTAGE (HIP4086 ONLY) FN4220 Rev 1.00 Page 8 of 17 January 12, 2017
HIP4086, HIP4086A Typical Performance Curves (Continued) 1 2 T (A) 0.8 CGATE = 1000pF NT (A) 1.6 VDD = 15V CGATE = 1000pF N E RE VDD = 15V RR VDD = 12V R U U C N C 0.6 VDD = 12V FF 1.2 VDD = 10V O O AVERAGE TURN- 00..24 VVVDDDDDD === 718V0VV AVERAGE TURN- 00..48 VVDDDD == 78VV 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) FIGURE 13. AVERAGE TURN-ON CURRENT (0 TO 5V) FIGURE 14. AVERAGE TURN-OFF CURRENT (VDD TO 4V) 40 100 VDD = XHB-XHS = 12V, CGATE = 1000pF MES (ns) 30 ELAY (ns) 80 xHI TO xHO TI RISE D L N L 20 O 60 D FA GATI N FALL A A P SE 10 RO 40 RI P xLI TO xLO 0 20 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) FIGURE 15. RISE AND FALL TIMES (10 TO 90%) FIGURE 16. PROPAGATION DELAY 100 80 UPPER DISABLE TURN-OFF TJ = +25°C s) n 60 DELAY ( LOWER DISABLE TURN-OFF ME (µs) ON LOWER ENABLE TURN-ON H TI 40 AGATI EFRES P R O 20 R P 10 0 0 50 100 150 200 250 300 350 400 450 500 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) CRFSH (pF) FIGURE 17. DISABLE PIN PROPAGATION DELAY FIGURE 18. REFRESH TIME FN4220 Rev 1.00 Page 9 of 17 January 12, 2017
HIP4086, HIP4086A Typical Performance Curves (Continued) 6 11.0 10.5 RDEL = 100kΩ N/ W 10.0 O DE 9.5 ENABLE (50kΩ, UVLO TO GND) D TIME (µs) 4 TAGE SHUTLE VOLTAG 89..50 TRIP (50k, UVLO TO GND) A LB 8.0 DE 2 RVOENA 7.5TRIP/ENABLE (0kΩ, UVLO TO VDD) ENABLE (UVLO OPEN) E D RDEL = 10kΩ UN 7.0 TRIP (UVLO OPEN) 6.5 0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) FIGURE 19. DEAD TIME FIGURE 20. UNDERVOLTAGE THRESHOLD 25 A) VxHS = 80V µ T ( 20 N E R R U C E G KA 15 A E L 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) FIGURE 21. IxHS LEAKAGE CURRENT Functional Description are enabled if the voltage on the RDEL pin is greater than 100mV. The voltage on RDEL will be greater than 100mV for any Input Logic value of programming resistor in the specified range. If the voltage on RDEL is less than 100mV, the delay timers are NOTE: When appropriate for brevity, input and output pins will be prefixed disabled and no shoot-through protection is provided by the with an “x” as a substitute for A, B, or C. For example, xHS refers to pins internal logic of the HIP4086/A. When the dead time is to be AHS, BHS, and CHS. disabled, RDEL should be shorted to VSS. The HIP4086/A are 3-phase bridge drivers designed specifically for motor drive applications. Three identical half bridge sections, Refresh Pulse A, B and C, can be controlled individually by their input pins, ALI, AHI, BLI, BHI, and CLI, CHI (xLI, xHI) or the 2 corresponding input To insure that the boot capacitors are charged prior to turning on pins for each section can be tied together to form a PWM input the high-side drivers, a refresh pulse is triggered when DIS is low (xLI connected to xHI = xPWM). When controlling individual or when the UV comparator transitions low (VDD is greater than inputs, the programmable dead time is optional but the programmed undervoltage threshold). Please refer to the shoot-through protection must then be incorporated in the timing “Block Diagram” on page2. When triggered, the refresh pulse of the input signals. If the PWM mode is chosen, then the internal turns on all of the low-side drivers (xLO = 1) and turns off all of programmable dead time must be used. the high-side drivers (xHO=0) for a duration set by a resistor tied between RDEL and VSS. When xLO = 1, the low-side bridge FETs Shoot-Through Protection charge the boot capacitors from VDD through the boot diodes. Dead time, to prevent shoot-through, is implemented by delaying the turn-on of the high-side and low-side drivers. The delay timers FN4220 Rev 1.00 Page 10 of 17 January 12, 2017
HIP4086, HIP4086A Charge Pump Equation1 calculates the total charge required for the Period duration. This equation assumes that all of the parameters are The internal charge pump of the HIP4086/A is used to maintain constant during the Period duration. The error is insignificant if the bias on the boot capacitor for 100% duty cycle. There is no Ripple is small. limit for the duration of this period. The user must understand that this charge pump is only intended to provide the static bias Q =Q +Period(I +V R +I ) C gate80V HB HO GS gate_leak current of the high-side drivers and the gate leakage current of C =Q RippleVDD the high-side bridge FETs. It cannot provide in a reasonable time, boot C the majority of the charge on the boot capacitor that is C = 0.52F (EQ. 1) boot consumed, when the xHO drivers source the gate charge to turn on the high-side bridge FETs. The boot capacitors should be sized If the gate-to-source resistor is removed (RGS is usually not so that they do not discharge excessively when sourcing the gate needed or recommended), then: charge. See “Application Information” for methods to size the boot capacitors. Cboot = 0.33µF The charge pump has sufficient capacity to source a worst-case These values of Cboot will sustain the high-side driver bias during minimum of 40µA to the external load. The gate leakage current Period with only a small amount of Ripple. But in the case of the of most power MOSFETs is about 100nA so there is more than HIP4086, the charge pump reduces the value of Cboot even sufficient current to maintain the charge on the boot capacitors. more. The specified charge pump current is a minimum of 40µA, Because the charge pump current is small, a gate-to-source which is more than sufficient to source Igate_leak. Also, because resistor on the high-side bridge FETs is not recommended. When the specified charge pump current is in excess of what is needed calculating the leakage load on the outputs of xHS, also include for IHB, the total charge required to be sourced by the boot the leakage current of the boot capacitor. This is rarely a problem capacitor is shown by Equation2. but it could be an issue with electrolytic capacitors at high Q =Q orC = 0.13F (EQ. 2) temperatures. C gate80V boot Application Information Not only is the required boot capacitor smaller in value, there is no restriction on the duration of Period. Selecting the Boot Capacitor Value The boot capacitor value is chosen not only to supply the internal bias current of the high-side driver but also, and more significantly, to provide the gate charge of the driven FET without causing the boot voltage to sag excessively. In practice, the boot capacitor should have a total charge that is about 20 times the gate charge of the driven power FET for approximately a 5% drop in voltage after charge has been transferred from the boot capacitor to the gate capacitance. The following parameters shown in Table2 are required to calculate the value of the boot capacitor for a specific amount of voltage droop when using the HIP4086/A (no charge pump). In Table2, the values used are arbitrary. They should be changed to comply with the actual application. TABLE 2. VDD = 10V VDD can be any value between 7 and 15VDC. FIGURE 22. TYPICAL GATE VOLTAGE vs GATE CHARGE VHB = VDD - 0.6V High-side driver bias voltage (VDD - boot diode = VHO voltage) referenced to VHS. Period = 1ms This is the longest expected switching period. IHB= 100µA Worst case high-side driver current when xHO=high (this value is specified for VDD = 12V but the error is not significant). RGS = 100kΩ Gate-to-source resistor (usually not needed). Ripple = 5% Desired ripple voltage on the boot capacitor (larger ripple is not recommended). Igate_leak = 100nA From the FET vendor’s datasheet. Qgate80V = 64nC From Figure22. FN4220 Rev 1.00 Page 11 of 17 January 12, 2017
HIP4086, HIP4086A Typical Application Circuit VDD VDD CHB RDEL BHB AHB AHO A BHO Battery Speed AALHII P4086/ CCHHOS 24V...48V Controller BHI HI ABHHSS BLI Brake CHI CLI VSS ALO BLO CLO FIGURE 23. TYPICAL APPLICATION CIRCUIT Figure23 is an example of how the HIP4086 and HIP4086A the high-side FET (blue) must rapidly commutate to flow through 3-phase drivers can be applied to drive a 3-phase motor. the low-side FET (red). The amplitude of the negative transient impressed on the xHS node is (di/dt x L) where L is the total Depending on the application, the switching speed of the bridge parasitic inductance of the low-side FET drain-to-source path and FETs can be reduced by adding series connected resistors di/dt is the rate at which the high-side FET is turned off. With the between the xHO outputs and the FET gates. Gate-to-source increasing power levels of new generation motor drives, resistors are recommended on the low-side FETs to prevent clamping this transient becomes more and more significant for unexpected turn-on of the bridge should the bridge voltage be the proper operation of the HIP4086/A. applied before VDD. Gate-to-source resistors on the high-side FETs are not usually required if low-side gate-to-source resistors There are several ways of reducing the amplitude of this are used. If relatively small gate-to-source resistors are used on transient. If the bridge FETs are turned off more slowly to reduce the high-side FETs, be aware that they will load the charge pump di/dt, the amplitude will be reduced but at the expense of more of the HIP4086 negating the ability of the charge pump to keep switching losses in the FETs. Careful PCB design will also reduce the high-side driver biased during very long periods. the value of the parasitic inductance. However, these two solutions by themselves may not be sufficient. Figure24 An important operating condition that is frequently overlooked by illustrates a simple method for clamping the negative transient. designers is the negative transient on the xHS pins that occurs Two series connected, fast PN junction, 1A diodes are connected when the high-side bridge FET turns off. The absolute maximum between xHS and VSS as shown. It is important that the transient allowed on the xHS pin is -6V but it is wise to minimize components be placed as close as possible to the xHS and VSS the amplitude to lower levels. This transient is the result of the pins to minimize the parasitic inductance of this current path. parasitic inductance of the low-side drain-to-source conductor on Two series connected diodes are required because they are in the PCB. Even the parasitic inductance of the low-side FET parallel with the body diode of the low-side FET. If only one diode contributes to this transient. is used for the clamp, it will conduct some of the negative load current that is flowing in the low-side FET. In severe cases, a small value resistor in series with the xHS pin as shown, will xHO INDUCTIVE further reduce the amplitude of the negative transient. LOAD Please note that a similar transient with a positive polarity occurs xHS - when the low-side FET turns off. This is less frequently a problem + because xHS node is floating up toward the bridge bias voltage. xLO The absolute maximum voltage rating for the xHS node does - VSS + need to be observed when the positive transient occurs. FIGURE 24. BRIDGE WITH PARASITIC INDUCTANCES When the high-side bridge FET turns off, because of the inductive characteristics of a motor load, the current that was flowing in FN4220 Rev 1.00 Page 12 of 17 January 12, 2017
HIP4086, HIP4086A General PCB Layout Guidelines capacitors must also have the shortest possible conduction paths. If vias are used, connect several paralleled vias to The AC performance of the HIP4086/A depends significantly on reduce the inductance of the vias. the design of the PC board. The following layout design • It may be necessary to add resistance to dampen resonating guidelines are recommended to achieve optimum performance: parasitic circuits especially on xHO and xLO. If an external gate • Place the driver as close as possible to the driven power FETs. resistor is unacceptable, then the layout must be improved to minimize lead inductance. • Understand where the switching power currents flow. The high amplitude di/dt currents of the driven power FET will induce • Keep high dv/dt nodes away from low level circuits. Guard significant voltage transients on the associated traces. banding can be used to shunt away dv/dt injected currents from sensitive circuits. This is especially true for control circuits • Keep power loops as short as possible by paralleling the that source the input signals to the HIP4086/A. source and return traces. • Avoid having a signal ground plane under a high amplitude • Use planes where practical; they are usually more effective dv/dt circuit. This will inject di/dt currents into the signal than parallel traces. ground paths. • Avoid paralleling high amplitude di/dt traces with low level • Do power dissipation and voltage drop calculations of the signal lines. High di/dt will induce currents and consequently, power traces. Many PCB/CAD programs have built in tools for noise voltages in the low level signal lines. calculation of trace resistance. • When practical, minimize impedances in low level signal • Large power components (power FETs, electrolytic capacitors, circuits. The noise, magnetically induced on a 10kΩ resistor, is power resistors, etc.) will have internal parasitic inductance 10x larger than the noise on a 1kΩ resistor. which cannot be eliminated. This must be accounted for in the • Be aware of magnetic fields emanating from motors, PCB layout and circuit design. transformers and inductors. Gaps in these magnetic structures • If you simulate your circuits, consider including parasitic are especially bad for emitting flux. components especially parasitic lead inductance. • If you must have traces close to magnetic devices, align the traces so that they are parallel to the flux lines to minimize coupling. • The use of low inductance components such as chip resistors and chip capacitors is highly recommended. • Use decoupling capacitors to reduce the influence of parasitic inductance in the VDD and GND leads. To be effective, these FN4220 Rev 1.00 Page 13 of 17 January 12, 2017
HIP4086, HIP4086A Revision History The revision history provided is for informational purposes only and is believed to be accurate, however, not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION CHANGE January 12, 2017 FN4220.11 The following revisions were made to the DC and AC Electrical Specifications: -VDD Quiescent Current (HIP4086): updated maximum (TJ = +25°C) from “4.2” to “5.1”, updated min and max (TJ = -40°C to +150°C) from “2.1” to “1.96” and “4.3” to “5.3”, respectively. -VDD Quiescent Current (HIP4086A): updated max and typical (TJ = +25°C) from “2.6” to “3.1” and from “2.4” to “2.8”, updated min and max (TJ = -40°C to +150°C) from “2.1” to “1.8” and from “2.7” to “3.3”, respectively. -VDD Operating Current (HIP4086): updated min and max (TJ = +25°C) from “6.3” to “5.4” and from “10.5” to “13”, updated min and max (TJ = -40°C to +150°C) from “5” to “4” and “11” to 13.5”, respectively. -VDD Operating Current (HIP4086A): updated typical and max (TJ = +25°C) from “3.6” to “4.0” and from “4.1” to “4.6”, updated min and max (TJ = -40°C to +150°C) from “2.8” to “2.7” and from “4.4” to “5.1”, respectively. -xHB On Quiescent Current (HIP4086): updated maximum (TJ = +25°C) from “80” to “110”, updated maximum (TJ = -40°C to +150°C) from “100” to “140”. -xHB On Quiescent Current (HIP4086A): updated typical and max (TJ = +25°C) from “80” to “90” and from “100” to “115”, updated maximum (TJ = -40°C to +150°C) from “200” to “225”. -xHB Off Quiescent Current (HIP4086A): updated typical and max (TJ = +25°C) from “0.9” to “1.0” and from “1” to “1.2”, updated maximum (TJ = -40°C to +150°C) from “1.2” to “1.25”. -xHB Operating Current (HIP4086A): updated maximum (TJ = +25°C) from “1” to “1.1”, updated maximum (TJ = -40°C to +150°C) from “1.2” to “1.25”. -xHB, xHS Leakage Current: updated typical (TJ = +25°C) from “24” to “30”. -Minimum Undervoltage Threshold: updated min (TJ = -40°C to +150°C) from “4.9” to “4.8”. -QPUMP Output Voltage: updated min and max (TJ = +25°C) from “11.5” to “11” and from “14” to “14.6”, updated min and max (TJ = -40°C to +150°C) from “10.5” to “10” and “14.5” to “14.75”, respectively. -QPUMP Output Current: updated min and max (TJ = +25°C) from “50” to “40” and from “130” to “160”, updated maximum (TJ = -40°C to +150°C) from “140” to “185”. -Low Level Input Current: updated maximum (TJ = +25°C) from “-135” to “-155”, updated maximum (TJ = -40°C to +150°C) from “-140” to “-165”. -Low Level Output Voltage: updated maximum (TJ = -40°C to +150°C) from “200” to “210”. -Dead Time (RDEL = 100kΩ): updated min and max (TJ = +25°C) from “3.8” to “3” and from “6” to “7.2”, updated maximum (TJ = -40°C to +150°C) from “7” to “8”. -Dead Time (RDEL = 10kΩ): updated maximum (TJ = +25°C) from “0.65” to “0.75”, updated maximum (TJ = -40°C to +150°C) from “0.7” to “0.8”. -xLI to xLO turn-off: updated maximum (TJ = +25°C) from “45” to “55”, updated maximum (TJ = -40°C to +150°C) from “65” to “75”. -xHI to xHO turn-off: updated maximum (TJ = +25°C) from “90” to “110”, updated maximum (TJ = -40°C to +150°C) from “100” to “135”. -xLI to xLO turn-on: updated maximum (TJ = +25°C) from “75” to “82”, updated maximum (TJ = -40°C to +150°C) from “90” to “100”. -xHI to xHO turn-on: updated maximum (TJ = +25°C) from “90” to “110”, updated maximum (TJ = -40°C to +150°C) from “100” to “158”. -Rise Time: updated maximum (TJ = -40°C to +150°C) from “50” to “60”. -Fall Time: updated maximum (TJ = -40°C to +150°C) from “25” to “40”. -DIS to xLO turn-off: updated maximum (TJ = -40°C to +150°C) from “90” to “104”. -DIS to xHO turn-off: updated maximum (TJ = +25°C) from “90” to “116”, updated maximum (TJ = -40°C to +150°C) from “100” to “147”. -DIS to xLO turn-on: updated maximum (TJ = +25°C) from “80” to “85”, updated maximum (TJ = -40°C to +150°C) from “100” to “120”. Minor Parameter label changes to use consistent descriptions for related parameters. Updated from “50µA” to “40µA” in “Charge Pump” and “Selecting the Boot Capacitor Value” on page11. March 27, 2015 FN4220.10 Added AN1829, “HIP4086 3-Phase BLDC Motor Drive Demonstration Board, User Guide” bullet to the related literature section on page1. On page3: In the Pin Configuration updated typo for Pin 17 Pin Name from “AHC” to “AHO”. In the Pin Description table: Updated RDEL and UVLO Description to reference the correct Figures. RDEL - from “Figure18” to “Figure19” and UVLO-from “Figure19”to “Figure20”. Updated typo-AHS pin number from “15” to “18”. Added “RDEL range10kΩ to 100kΩ” to the “Maximum Recommended Operating Conditions” on page5. Updated the About Intersil verbiage. January 28, 2013 FN4220.9 Corrected following typo in the second paragraph of page1: From: (0.5ms to 4.5ms) To: (0.5µs to 4.5µs) FN4220 Rev 1.00 Page 14 of 17 January 12, 2017
HIP4086, HIP4086A Revision History The revision history provided is for informational purposes only and is believed to be accurate, however, not warranted. Please go to the web to make sure that you have the latest revision. (Continued) DATE REVISION CHANGE September 27, 2012 FN4220.8 Removed evaluation board from “Ordering Information” and “Related Literature” since it is inactive. June 1, 2011 FN4220.7 Added alternate parameters for HIP4086A in DC Electrical Specifications Table Supply Currents on page5. Added to Charge Pump Figures 11 and 12 in Typical Performance Curves “HIP4086 Only” -Converted to new Intersil datasheet template. -Changed Title from “80V, 500mA, 3-Phase Driver” to “80V, 500mA, 3-Phase MOSFET Driver”. -Rewrote description on page 1 by adding HIP4086A and stating the differences between parts. -Updated “Ordering Information” on page4 by adding part number HIP4086AABZ and Eval Board. Added MSL note. Removed obsolete part HIP4086AP. -Updated “TYPICAL APPLICATION” on page1. -Added Figure2 on page1. -Updated “Features” and “Applications” section on page1. -Added “” on page1. -Updated “Block Diagram” on page2 by adding color and notes. -Updated “Thermal Information” and notes on page5. -Added “Boldface limits apply..” to common conditions of Electrical Specifications tables. Added Note 9 to MIN and MAX columns of Electrical Specifications tables. -Updated all timing diagrams for better clarification on page7. -Added “Functional Description”, “Application Information” and “General PCB Layout Guidelines” sections beginning on page10. -Updated Package Outline Drawing M24.3 by removing table listing dimensions and putting dimensions on drawing. Added Land Pattern. -Added “Revision History” and “About Intersil” to page15. July 26, 2004 FN4220.6 Added Pb-Free parts to “Ordering Information” on page4. February 18, 2003 FN4220.5 Revised “Pin Descriptions” on page3. Revised “Low Level Input Current” specs on page6. May, 1999 FN4220.4 Initial Release. About Intersil Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets. For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page found at www.intersil.com. For a listing of definitions and abbreviations of common terms used in our documents, visit: www.intersil.com/glossary. You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask. Reliability reports are also available from our website at www.intersil.com/support. © Copyright Intersil Americas LLC 2011-2017. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN4220 Rev 1.00 Page 15 of 17 January 12, 2017
HIP4086, HIP4086A Package Outline Drawing For the most recent package outline drawing, see M24.3. M24.3 24 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE (SOIC) Rev 2, 3/11 24 INDEX AREA 7.60 (0.299) 7.40 (0.291) 10.65 (0.419) 10.00 (0.394) DETAIL "A" 1 2 3 TOP VIEW 1.27 (0.050) SEATING PLANE 0.40 (0.016) 15.60 (0.614) 2.65 (0.104) 15.20 (0.598) 2.35 (0.093) 0.75 (0.029) x 45° 0.25 (0.010) 1.27 (0.050) 0.30 (0.012) 8° 0.10 (0.004) 0° 0.51 (0.020) 0.33 (0.013) 0.32 (0.012) 0.23 (0.009) SIDE VIEW “A” SIDE VIEW “B” 1.981 (0.078) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982. 2. Package length does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 3. Package width does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 4. The chamfer on the body is optional. If it is not present, a visual 9.373 (0.369) index feature must be located within the crosshatched area. 5. Terminal numbers are shown for reference only. 6. The lead width as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 7. Controlling dimension: MILLIMETER. Converted inch dimensions in ( ) are not necessarily exact. 8. This outline conforms to JEDEC publication MS-013-AD ISSUE C. 1.27 (0.050) 0.533 (0.021) TYPICAL RECOMMENDED LAND PATTERN FN4220 Rev 1.00 Page 16 of 17 January 12, 2017
HIP4086, HIP4086A Dual-In-Line Plastic Packages (PDIP) For the most recent package outline drawing, see E24.3. N E24.3 (JEDEC MS-001-AF ISSUE D) E1 INDEX 24 LEAD NARROW BODY DUAL-IN-LINE PLASTIC PACKAGE AREA 1 2 3 N/2 INCHES MILLIMETERS -B- SYMBOL MIN MAX MIN MAX NOTES -A- A - 0.210 - 5.33 4 D E BASE A1 0.015 - 0.39 - 4 PLANE A2 -C- A A2 0.115 0.195 2.93 4.95 - SEATING PLANE L CL B 0.014 0.022 0.356 0.558 - D1 D1 A1 eA B1 0.045 0.070 1.15 1.77 8 B1 e C 0.008 0.014 0.204 0.355 - eC C B eB D 1.230 1.280 31.24 32.51 5 0.010 (0.25) M C A B S D1 0.005 - 0.13 - 5 NOTES: E 0.300 0.325 7.62 8.25 6 1. Controlling Dimensions: INCH. In case of conflict between English and E1 0.240 0.280 6.10 7.11 5 Metric dimensions, the inch dimensions control. e 0.100 BSC 2.54 BSC - 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of eA 0.300 BSC 7.62 BSC 6 Publication No. 95. eB - 0.430 - 10.92 7 4. Dimensions A, A1 and L are measured with the package seated in JEDEC L 0.115 0.150 2.93 3.81 4 seating plane gauge GS-3. N 24 24 9 5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch (0.25mm). Rev. 0 12/93 6. E and eA are measured with the leads constrained to be perpendicular to datum -C- . 7. eB and eC are measured at the lead tips with the leads unconstrained. eC must be zero or greater. 8. B1 maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed 0.010 inch (0.25mm). 9. N is the maximum number of terminal positions. 10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm). FN4220 Rev 1.00 Page 17 of 17 January 12, 2017