Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

S in g le January 2011 - C h a n n e Single-Channel: 6N137, HCPL2601, HCPL2611 l: 6 N Dual-Channel: HCPL2630, HCPL2631 1 3 7 High Speed 10MBit/s Logic Gate Optocouplers , H C P L Features Description 2 6 0 ■ Very high speed – 10 MBit/s The 6N137, HCPL2601, HCPL2611 single-channel and 1 ■ Superior CMR – 10 kV/µs HCPL2630, HCPL2631 dual-channel optocouplers , H ■ Double working voltage-480V consist of a 850 nm AlGaAS LED, optically coupled to a C P ■ Fan-out of 8 over -40°C to +85°C very high speed integrated photo-detector logic gate with L 2 ■ Logic gate output a strobable output. This output features an open collec- 6 tor, thereby permitting wired OR outputs. The coupled 1 ■ Strobable output 1 parameters are guaranteed over the temperature range D ■ Wired OR-open collector of -40°C to +85°C. A maximum input signal of 5mA will u ■ U.L. recognized (File # E90700) a provide a minimum output sink current of 13mA (fan out l- C Applications of 8). h a An internal noise shield provides superior common n ■ Ground loop elimination n mode rejection of typically 10kV/µs. The HCPL2601 and e ■ LSTTL to TTL, LSTTL or 5-volt CMOS HCPL2631 has a minimum CMR of 5kV/µs. The l: H ■ Line receiver, data transmission HCPL2611 has a minimum CMR of 10kV/µs. C P ■ Data multiplexing L ■ Switching power supplies 26 3 ■ Pulse transformer replacement 0 ■ Computer-peripheral interface , H C P L 2 Schematics Package Outlines 6 3 1 — H ig h N/C 1 8 VCC + 1 8 VCC 8 Sp 1 e V e F1 d + 2 7 VE _ 2 7 V01 10M V B F 8 it _ 3 6 VO _ 3 6 V02 1 8 /s L 1 o V g F2 ic N/C4 5 GND + 4 5 GND Truth Table (Positive Logic) G a Input Enable Output te O H H L p 6N137 HCPL2630 L H H to HCPL2601 HCPL2631 c HCPL2611 H L H o u L L H p A 0.1µF bypass capacitor must be connected between pins 8 and 5(1). H NC L ler s L NC H ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8

S in Absolute Maximum Ratings (T = 25°C unless otherwise specified) g A le Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be - C operable above the recommended operating conditions and stressing the parts to these levels is not recommended. h In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. a n The absolute maximum ratings are stress ratings only. n e l: Symbol Parameter Value Units 6 N T Storage Temperature -55 to +125 °C 1 STG 3 7 TOPR Operating Temperature -40 to +85 °C , H T Lead Solder Temperature (for wave soldering only)* 260 for 10 sec °C C SOL P EMITTER L 2 6 IF DC/Average Forward Single Channel 50 mA 0 1 Input Current Dual Channel (Each Channel) 30 , H C V Enable Input Voltage Not to Exceed Single Channel 5.5 V E P V by more than 500mV L CC 2 V Reverse Input Voltage Each Channel 5.0 V 6 R 1 1 PI Power Dissipation Single Channel 100 mW D u Dual Channel (Each Channel) 45 a l- DETECTOR C h V Supply Voltage 7.0 V a CC n (1 minute max) n e I Output Current Single Channel 50 mA l: O H Dual Channel (Each Channel) 50 C P V Output Voltage Each Channel 7.0 V L O 2 6 PO Collector Output Single Channel 85 mW 3 0 Power Dissipation Dual Channel (Each Channel) 60 , H C *For peak soldering reflow, please refer to the Reflow Profile on page 11. P L 2 6 3 1 — Recommended Operating Conditions H ig The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended h operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not S p recommend exceeding them or designing to absolute maximum ratings. e e d Symbol Parameter Min. Max. Units 1 0 IFL Input Current, Low Level 0 250 µA M B IFH Input Current, High Level *6.3 15 mA it /s VCC Supply Voltage, Output 4.5 5.5 V L o V Enable Voltage, Low Level 0 0.8 V EL g V Enable Voltage, High Level 2.0 V V ic EH CC G T Low Level Supply Current -40 +85 °C a A t e N Fan Out (TTL load) 8 O p *6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value to is 5.0mA or less. c o u p le r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 2

S in Electrical Characteristics (T = 0 to 70°C unless otherwise specified) g A le - Individual Component Characteristics C h Symbol Parameter Test Conditions Min. Typ.* Max. Unit a n n EMITTER e l: VF Input Forward Voltage IF = 10mA 1.8 V 6 N TA = 25°C 1.4 1.75 1 3 B Input Reverse Breakdown I = 10µA 5.0 V 7 VR Voltage R , H C C Input Capacitance V = 0, f = 1MHz 60 pF P IN F L ∆V / ∆T Input Diode Temperature I = 10mA -1.4 mV/°C 2 F A F 6 Coefficient 0 1 DETECTOR , H I High Level Supply Current V = 5.5V, I = 0mA, Single Channel 7 10 mA C CCH CC F P VE = 0.5V Dual Channel 10 15 L 2 6 ICCL Low Level Supply Current Single Channel VCC = 5.5V, 9 13 mA 1 I = 10mA 1 F D Dual Channel V = 0.5V 14 21 u E a IEL Low Level Enable Current VCC = 5.5V, VE = 0.5V -0.8 -1.6 mA l-C I High Level Enable Current V = 5.5V, V = 2.0V -0.6 -1.6 mA h EH CC E a n VEH High Level Enable Voltage VCC = 5.5V, IF = 10mA 2.0 V n VEL Low Level Enable Voltage VCC = 5.5V, IF = 10mA(3) 0.8 V el: H C Switching Characteristics (T = -40°C to +85°C, V = 5V, I = 7.5mA unless otherwise specified) P A CC F L 2 Symbol AC Characteristics Test Conditions Min. Typ.* Max. Unit 6 3 T Propagation Delay R = 350Ω, T = 25°C 20 45 75 ns 0 PLH Time to Output HIGH CL = 15pF(4) (Fig. 12) A , H L 100 Level C P T Propagation Delay T = 25°C(5) 25 45 75 ns L PHL A 2 Time to Output LOW RL = 350Ω, CL = 15pF (Fig. 12) 100 63 Level 1 |T –T | Pulse Width Distortion (R = 350Ω, C = 15pF (Fig. 12) 3 35 ns — PHL PLH L L H tr Output Rise Time RL = 350Ω, CL = 15pF(6) (Fig. 12) 50 ns ig (10–90%) h t Output Rise Time R = 350Ω, C = 15pF(7) (Fig. 12) 12 ns S f L L p (90–10%) e e t Enable Propagation I = 7.5mA, V = 3.5V, R = 350Ω, C = 15pF(8) 20 ns d ELH F EH L L 1 Delay Time to Output (Fig. 13) 0 HIGH Level M B tEHL EDnealabyl eT iPmroep taog Oautiotpnu t I(FF i=g .7 1.53m) A, VEH = 3.5V, RL = 350Ω, CL = 15pF(9) 20 ns it/s L LOW Level o g |CMH| Common Mode TA = 25°C, |VCM| = 50V 6N137, HCPL2630 10,000 V/µs ic Transient Immunity (Peak), IF = 0mA, HCPL2601, HCPL2631 5000 10,000 G (at Output HIGH Level) VOH (Min.) = 2.0V, a R = 350Ω(10) (Fig. 14) te L O |VCM| = 400V HCPL2611 10,000 15,000 V/µs p t |CM | Common Mode R = 350Ω, I = 7.5mA, 6N137, HCPL2630 10,000 o L L F c Transient Immunity V (Max.) = 0.8V, o OL HCPL2601, HCPL2631 5000 10,000 (at Output LOW Level) TA = 25°C(11) (Fig. 14) up |V | = 400V HCPL2611 10,000 15,000 le CM r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 3

S in Electrical Characteristics (Continued) g le - Transfer Characteristics (T = -40 to +85°C unless otherwise specified) C A h Symbol DC Characteristics Test Conditions Min. Typ.* Max. Unit a n n I HIGH Level Output Current V = 5.5V, V = 5.5V, 100 µA e OH IFC =C 250µA, VEO = 2.0V(2) l: 6 N VOL LOW Level Output Current VCC = 5.5V, IF = 5mA, VE = 2.0V, .35 0.6 V 1 ICL = 13mA(2) 37 I Input Threshold Current V = 5.5V, V = 0.6V, V = 2.0V, 3 5 mA , H FT CC O E C I = 13mA OL P L 2 6 Isolation Characteristics (T = -40°C to +85°C unless otherwise specified.) 0 A 1 Symbol Characteristics Test Conditions Min. Typ.* Max. Unit , H C II-O Input-Output Insulation Relative humidity = 45%, 1.0* µA P Leakage Current T = 25°C, t = 5s, L A 2 V = 3000 VDC(12) 6 I-O 1 1 VISO Withstand Insulation Test RH < 50%, TA = 25°C, 2500 VRMS D Voltage II-O ≤ 2µA, t = 1 min.(12) u a RI-O Resistance (Input to Output) VI-O = 500V(12) 1012 Ω l-C C Capacitance (Input to Output) f = 1MHz(12) 0.6 pF h I-O a n n *All Typicals at V = 5V, T = 25°C CC A e l: H Notes: C 1. The V supply to each optoisolator must be bypassed by a 0.1µF capacitor or larger. This can be either a ceramic P CC or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible L 2 to the package V and GND pins of each device. 6 CC 3 0 2. Each channel. , H 3. Enable Input – No pull up resistor required as the device has an internal pull up resistor. C P 4. t – Propagation delay is measured from the 3.75mA level on the HIGH to LOW transition of the input current L PLH 2 pulse to the 1.5 V level on the LOW to HIGH transition of the output voltage pulse. 6 3 5. t – Propagation delay is measured from the 3.75mA level on the LOW to HIGH transition of the input current 1 pPuHlsLe to the 1.5 V level on the HIGH to LOW transition of the output voltage pulse. — 6. t – Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse. H r ig 7. t – Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse. h f S 8. t – Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input p ELH e voltage pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse. e d 9. tEHL – Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input 1 voltage pulse to the 1.5V level on the HIGH to LOW transition of the output voltage pulse. 0 M 10. CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the B HIGHH state (i.e., VOUT > 2.0V). Measured in volts per microsecond (V/µs). it/s 11.CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the L L o LOW output state (i.e., V < 0.8V). Measured in volts per microsecond (V/µs). g OUT ic 12.Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted G together. a t e O p t o c o u p le r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 4

S in Typical Performance Curves g le - C Fig.1 Low Level Output Voltage vs. Ambient Temperature Fig. 2 Input Diode Forward Voltage h vs. Forward Current a 0.8 n )V( EGATLOV TUPTUO LEV 00000.....34567 CIVVF ECo= Cn= 5=d 2 itm5 iVo.A5nVs: IOL = 12.8 mA IOL = 16mA )Am( TNERRUC DRA 0113.06011 nel: 6N137, HCP EL WOL – VLO 00..12 IOL = 6.4mAIOL = 9.6mA WROF – IF0.00.0011 L2601, H 0.0 C -40 -20 0 20 40 60 80 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 P TA – AMBIENT TEMPERATURE (°C) VF – FORWARD VOLTAGE (V) L2 6 1 1 Fig.3 Switching Time vs. Forward Current Fig. 4 Low Level Output Current D vs. Ambient Temperature u 120 50 a )sn( Y 100 VCC = 5 V )Am( TN 45 IF = 15mA l-Cha AL RL = 4 kΩ (TPLH) ER IF = 10mA n ED NOIT 80 RUC TU 40 IF = 5mA nel: H AG 60 PT 35 C AP RL = 1 kΩ (TPLH) UO P O L L RP – TP 24000 RL = 350 Ω (TPLH) RRRLLL === 143 5kk0ΩΩ kΩ(T PHL) EVEL WOL – ILO 223050 CVVVCEOo CLn= ==d 2 it05 Vio. V6n Vs: 2630, HCP 5 7 9 11 13 15 -40 -20 0 20 40 60 80 L IF – FORWARD CURRENT (mA) TA – AMBIENT TEMPERATURE (°C) 26 3 1 Fig. 5 Input Threshold Current Fig. 6 Output Voltage vs. Input Forward Current — )Am 4 vs. Ambient Temperature 6 Hig ( TNERRU CVVCOo Cn= =d 0 it5.i6o.0 nV sV: )V( EG 5 RL = 350Ω h Spe C DLOH 3 RL = 350Ω ATLOV 4 RL = 4kΩ RL = 1kΩ ed 1 S T 3 0 E U M RH RL = 1kΩ PT B T U TUPNI – ITF 2 RL = 4kΩ O – VO 12 it/s Log ic 1-40 -20 0 20 40 60 80 00 1 2 3 4 5 6 G a TA – AMBIENT TEMPERATURE (°C) IF - FORWARD CURRENT (mA) te O p t o c o u p le r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 5

S Typical Performance Curves (Continued) ing le - Fig. 7 Pulse Width Distortion vs. Temperature Fig. 8 Rise and Fall Time vs. Temperature C 80 600 h a )sn( N RL = 4 kΩ )s 500 RL = 4 kΩ(tr) nne OITROTSID 4600 CIVFCo =Cn d7=i.t 5i5omAnA s: n( EMIT LLA 340000 VCIFCo =Cn d7=i.t 5i5o mnVsA: l: 6N13 HTD F DN 7, H IW ESLUP – DWP 200 RL = 1 kΩRL = 350Ω A ESIR – fT/rT 1200000 RLR =L =3 510 kΩΩ ((ttrr)) RRRLLL === 143 5kk0ΩΩΩ (tf) CPL2601, H -60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100 C P TA – TEMPERATURE (°C) TA – TEMPERATURE (°C) L 2 6 1 1 Fig. 9 Enable Propagation Delay vs. Temperature Fig. 10 Switching Time vs. Temperature D u 120 120 a )sn( YA 100 )s RL = 4 kΩ TPLH l-Ch LED NO 80 RL = 4 kΩ (TELH) n( YALE 100 anne ITAG D NO 80 l: H APO 60 ITAG CP RP ELBANE – TE 24000 RLR =L =3 510 kΩΩ (T(TEELLHH)) RRRLLL === 3145 kk0ΩΩΩ (TEHL) APORP – TP 246000 RRLL == 13 5k0ΩΩ TTPPLLHH RRRLLL === 143 5kk0ΩΩΩ TPHL L2630, HCP -60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100 L 2 TA – TEMPERATURE (°C) TA – TEMPERATURE (°C) 6 3 1 — Fig. 11 High Level Output Current vs. Temperature H 20 ig )A h µ( TN VCCoCn d=it i5o.n5s V: Sp ERRU 15 VIVFOE = == 2 255..005 µVVA eed C T 1 U 0 PTUO 10 MB LEV it/s EL L H 5 o GIH – gic HO G I 0 a -60 -40 -20 0 20 40 60 80 100 t e TA – TEMPERATURE (°C) O p t o c o u p le r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 6

S in Test Circuits g le - C Pulse h a Generator n tr = 5ns n Z O = 50Ω +5V e l: 6 N I = 7.5 mA F 1 3 1 VCC 8 I(nIF p)ut I F = 3.75 mA 7, H t t C PHL PLH P 2 7 .1 µf R Output L bypass L (VO ) 2 1.5 V 6 0 Input 3 6 Output 1 Monitor (VO ) Output 90% , H (I F ) CL (V ) C O 10% P 47 4 GND 5 L t t 2 f r 6 1 1 D u a Fig. 12 Test Circuit and Waveforms for t , t t and t l-C PLH PHL, r f h a n n e PGuelnseerator Input l: H tr = 5ns Monitor C Z O = 50Ω (V E ) PL +5V 2 6 3 0 3.0 V , H V Input C 1 CC 8 (VE ) 1.5 V P L t t 2 7.5 mA EHL ELH 6 Output 3 2 7 b.1y µpfa ss RL (VO ) 1.5 V 1 — Output H 3 6 (VO ) ig CL h S 4 5 p GND e e d 1 0 M Fig. 13 Test Circuit t and t B EHL ELH it /s L o g ic G a t e O p t o c o u p le r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 7

S in Test Circuits (Continued) g le - C h V a CC n 1 8 +5V n e l: 6 I N A F 2 7 .1 µf 350Ω 1 bypass 3 7 B Output , H VFF 3 6 (V ) C O P L 2 6 4 5 0 1 GND , H C P VCM L 2 6 Pulse Gen 1 1 D u a Peak l-C h a n VCM n 0V e l: H C P 5V CMH L Switching Pos. (A), I = 0 2 F 6 VO 3 0 VO (Min) , H C P V (Max) L O 2 6 3 Switching Pos. (B), I F = 7.5 mA 1 VO — 0.5 V CML H ig h S p e Fig. 14 Test Circuit Common Mode Transient Immunity e d 1 0 M B it /s L o g ic G a t e O p t o c o u p le r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 8

S in Ordering Information g le - Option Example Part Number Description C h S 6N137S Surface Mount Lead Bend a n n SD 6N137SD Surface Mount; Tape and Reel e l: W 6N137W 0.4" Lead Spacing 6 N V 6N137V VDE0884 1 3 7 WV 6N137WV VDE0884; 0.4” Lead Spacing , H SV 6N137SV VDE0884; Surface Mount C P SDV 6N137SDV VDE0884; Surface Mount; Tape and Reel L 2 6 0 1 , H C Marking Information P L 2 6 1 1 1 D u a 2601 2 l- C h a V XX YY T1 6 n n e l: H C 3 4 5 P L 2 6 3 0 Definitions , H C P 1 Fairchild logo L 2 2 Device number 6 3 3 VDE mark (Note: Only appears on parts ordered with VDE option – 1 See order entry table) — 4 Two digit year code, e.g., ‘03’ H ig 5 Two digit work week ranging from ‘01’ to ‘53’ h S 6 Assembly package code p e e d 1 0 M B it /s L o g ic G a t e O p t o c o u p le r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 9

S in Tape Specifications g le - C 12.0 ± 0.1 h 4.90 ± 0.20 an 4.0 ± 0.1 Ø1.55 ± 0.05 ne 0.30 ± 0.05 4.0 ± 0.1 1.75 ± 0.10 l: 6 N 1 3 7 , H 7.5 ± 0.1 C 13.2 ± 0.2 16.0 ± 0.3 PL 10.30 ± 0.20 2 6 0 1 , H C 0.1 MAX 10.30 ± 0.20 Ø1.6 ± 0.1 P L 2 User Direction of Feed 61 1 D u a l- C h Reflow Profile a n n e 300 l: 215 C, 10–30 s H 250 C e (°C) 200 225 C peak PL2 ur 6 at 150 3 mper 100 Time above 183C, 60–150 sec 0, H e C T 50 Ramp up = 3C/sec P L 0 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 6 3 Time (Minute) 1 — •• PTiemaek oref ftleomw pteemraptuerrea thuirgeh: e2r2 t5hCan ( p1a8c3kCa gfoer s6u0r–fa1c5e0 tseemcpoenrdasture) H • One time soldering reflow is recommended ig h S p e e d 1 0 M B it /s L o g ic G a t e O p t o c o u p le r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8 10

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