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H C P July 2006 L 0 6 2 HCPL062N N tm 3 3.3V Dual Channel High Speed-10 MBit/s Logic Gate . 3 V Optocouplers D u a l Features Description C h ■ Compact SO8 package The HCPL062N optocouplers consist of an AlGaAs LED, a n ■ Very high speed – 10MBit/s optically coupled to a very high speed integrated photo- n e detector logic gate consisting of bipolar transistors on a ■ Superior CMR – 25kV/µs minimum (1,000 volts l CMOS process for reduced power consumption. The H common mode) i output features an open collector, thereby permitting g ■ Logic gate output h wired OR outputs. The devices are housed in a compact ■ Wired OR-open collector small-outline package. The coupled parameters are S p ■ Fixed threshold detector design minimizes thermal guaranteed over the temperature range of -40°C to e impact on switching times +85°C. An internal noise shield and provides superior ed ■ U.L. recognized (File # E90700) common mode rejection. -1 0 Applications M B ■ Ground loop elimination it / ■ Field buses s L ■ Line receiver, data transmission o g ■ Data multiplexing i c ■ Switching power supplies G ■ Pulse transformer replacement a t ■ Computer-peripheral interface e O ■ Instrumentation input/output isolation p t o c o Package Dimensions u p l e r s 0.164 (4.16) 0.144 (3.66) E N A L P G N Pin 1 TI 0.202 (5.13) EA 0.182 (4.63) S 0.019 (0.48) 0.143 (3.63) 0.010 (0.25) 0.123 (3.13) 0.006 (0.16) 0.244 (6.19) 0.008 (0.20) 0.224 (5.69) Lead Coplanarity : 0.004 (0.10) MAX 0.003 (0.08) 0.021 (0.53) 0.011 (0.28) 0.050 (1.27) TYP Note: All dimensions are in inches (millimeters) ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com HCPL062N Rev. 1.0.0

Circuit Drawing(1) H C P L 0 6 2 N + 1 8 V CC 3 . 3 V V F1 D _ 2 7 V u 01 a l C h a _ 3 6 V n 02 n e V l F2 H i g + 4 5 GND h S p e e d Note: - 1 1. The V supply to each optoisolator must be bypassed by a 0.1µF capacitor or larger. This can be either a ceramic 0 CC or solid tantalum capacitor with good high frequency characteristic and should be connected no further than 3mm M from the V and GND pins of each device. B CC i t / s L o Truth Table (Positive Logic) g i c Input Output G a H L t e L H O p t o A 0.1µF bypass capacitor must be connected between pins 8 and 5. c o u p l e r s 2 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Absolute Maximum Ratings (No derating required up to 85°C) P L 0 Symbol Parameter Value Units 6 2 TSTG Storage Temperature -40 to +125 °C N TOPR Operating Temperature -40 to +85 °C 3 . 3 EMITTER V I DC/Average Forward Input Current (each channel) 50 mA D F u V Reverse Input Voltage (each channel) 5.0 V a R l P Power Dissipation 45 mW C I h DETECTOR a n V Supply Voltage 7.0 V n CC e (1 minute max) l H IO Output Current (each channel) 15 mA ig V Output Voltage (each channel) 7.0 V h O S PO Collector Output Power Dissipation 85 mW p e e d - 1 Recommended Operating Conditions 0 M Symbol Parameter Min. Max. Units B i t IFL Input Current, Low Level 0 250 µA /s I Input Current, High Level 6.3(2) 15 mA L FH o V Supply Voltage, Output 2.7 3.3 V g CC i c TA Operating Temperature -40 +85 °C G N Fan Out (TTL load) – 5 TTL Loads a t e RL Output Pull-up 330 4K Ω O p Note: t o 2. 6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value c is 5.0mA or less o u p l e r s 3 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Electrical Characteristics (T = -40°C to +85°C Unless otherwise specified.) P A L 0 Individual Component Characteristics 6 2 Symbol Parameter Test Conditions Min. Typ.(3) Max. Unit N EMITTER 3 . 3 VF Input Forward Voltage IF = 10mA – – 1.8 V V T =25°C – – 1.75 D A u B Input Reverse Breakdown I = 10µA 5.0 – – V a VR R l Voltage C h ∆VF/∆TA Input Diode Temperature IF = 10mA – -1.5 – mV/°C a Coefficient n n DETECTOR e l H I High Level Supply Current I = 0mA, V = 3.3V – 7.1 10 mA CCH F CC i g I Low Level Supply Current I = 10mA, V = 3.3V – 6.7 15 mA h CCL F CC S p Switching Characteristics (T = -40°C to +85°C, V = 3.3V, I = 7.5 mA Unless otherwise specified.) e A CC F e Symbol AC Characteristics Test Conditions Min. Typ.(3) Max. Unit d - 1 T Propagation Delay R = 350Ω, C = 15pF – – 90 ns 0 PLH L L Time to Output High Note 4, Fig. 10 M B Level i t TPHL Propagation Delay RL = 350Ω, CL = 15pF – – 75 ns /s Time to Output Low Note 5, Fig. 10 L Level o g |TPHL–TPLH| Pulse Width Distortion RL = 350Ω, CL = 15pF – – 25 ns ic Fig. 10 G a tr Output Rise Time RL = 350Ω, CL = 15pF) – 16 – ns te (10–90%) Note 6, Fig. 10 O t Output Fall Time R = 350Ω, C = 15pF – 4 – ns p f L L t (90–10%) Note 7, Fig. 10 o c |CM | Common Mode R = 350Ω, T = 25°C, I = 0 mA, 25,000 – – V/µs o H L A F u Transient Immunity VCC = 3.3V, VO(Min.) = 2V p (at Output High Level) |VCM| = 1,000V le Notes 8, 11, Fig. 11 rs |CM | Common Mode R = 350Ω, T =25°C, I = 7.5mA, 25,000 – – V/µs L L A F Transient Immunity V = 3.3V, V = 0.8V CC O(Max.) (at Output Low Level) |V | = 1,000V CM Notes 9, 11, Fig. 11 4 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Transfer Characteristics (TA = -40°C to +85°C Unless otherwise specified.) P L Symbol DC Characteristics Test Conditions Min. Typ.(3) Max. Unit 0 6 V Low Level Output Voltage V = 3.3V, I = 5mA, I = 13mA – – 0.6 V 2 OL CC F OL N IFT Input Threshold Current VCC = 3.3V, VO = 0.6V, IOL = 13mA – – 5 mA 3 . 3 V D Isolation Characteristics (T = -40°C to +85°C Unless otherwise specified.) u A a Symbol Characteristics Test Conditions Min. Typ.(3) Max. Unit l C I Input-Output Relative humidity = 45% – – 1.0 µA h I-O a Insulation Leakage Current TA = 25°C, t = 5 sec. n V = 3000 VDC, Note 10 n I-O e l V Withstand Insulation Test R < 50%, T = 25°C 2500 – – V ISO H A RMS H Voltage II-O ≤ 2µA, t = 1 min., ig Note 10 h R Resistance (Input to Output) V = 500V, Note 10 – 1012 – Ω S I-O I-O p e C Capacitance (Input to Output) f = 1MHz, Note 10 – 0.6 – pF I-O e d - 1 Notes: 0 M 3. All typical values are at V = 3.3V, T = 25°C unless otherwise specified. CC A B 4. t – Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current PLH i t pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse. / s 5. tPHL – Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current L pulse to the 1.5V level on the HIGH to LOW transition of the output voltage pulse. o g 6. tr – Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse. ic 7. t – Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse. f G 8. CMH – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high a state (i.e., VOUT > 2.0 V). Measured in volts per microsecond (V/µs). te 9. CM – The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low O L output state (i.e., V < 0.8 V). Measured in volts per microsecond (V/µs). p OUT t 10.Device considered a two-terminal device: Pins 1,2,3 and 4 shorted together, and Pins 5,6,7 and 8 shorted together. o c 11.The power supply bypass capacitors must be no further than 3mm from the leads of the optocoupler. A low o inductance ground plane width of with ≤ 5nHy of series lead inductance is required. u p l e r s 5 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Typical Performance Curves P L 0 Fig. 2 High Level Output Current vs. 6 Fig. 1 Forward Current vs. Forward Voltage Ambient Temperature 2 N 100 12 )Am( TNE 10 TA = 100oC )An( TNERRUC 108 VIFO = = 2 V50CµCA = 3.3V 3.3V Dua RR 1 TU l U P C C DRAW 0.1 TA = 85oC TA = -40oC TUO LE 6 han RO TA = 0oC VEL 4 ne F – IF0.01 TA = 25oC HGIH – 2 l Hig HO h I 0.001 0 S 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -40 -20 0 20 40 60 80 100 p e VF – FORWARD VOLTAGE (V) TA – AMBIENT TEMPERATURE (°C) ed - 1 Fig. 3 Low Level Output Current vs. Ambient Temperature Fig. 4 Input Threshold Current vs. Temperature 0 M 40 2.5 )Am( TN 35 VVIFCO =CL 5==m 03A..63VV )Am( T 2.0 VVRCOLC == = 03 3.56.03VΩV, 1kΩ, 4kΩ Bit/s L E N R E o R R g U 30 R C TU UC D 1.5 ic G P L TU 25 OH a O LEV 20 SERH 1.0 te O EL T T p W U t OL - L 15 PNI - H 0.5 oco O T u I I 0.0 p 10-40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 le TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C) rs 6 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Typical Performance Curves (Continued) P L 0 Fig. 5 Pulse Width Distortion vs. Ambient Temperature Fig. 6 Propagation Delay vs. Pulse Input Current 6 2 N 30 120 VCC = 3.3V VCC = 3.3V )sn( NO 25 RIFL = = 7 3.55m0ΩA )s 100 RTAL == 2355o0CΩ 3.3V ITR n( Y D OT 20 AL 80 u SID HTD 15 ED NOIT 60 tPLH al Ch IW AG a ESL 10 APO 40 tPHL nn UP RP e – DW 5 – t P 20 l Hi P g h 0 0 S -40 -20 0 20 40 60 80 100 5 7 9 11 13 15 p TA – AMBIENT TEMPERATURE (˚C) IF – PULSE INPUT CURRENT (mA) ee d - 1 Fig. 7 Propagation Delay vs. Ambient Temperature Fig. 8 Rise and Fall Times vs. Ambient Temperature 0 100 30 M V = 3.3V V = 3.3V CC CC B 90 IF = 7.5mA IF = 7.5mA i )s RL = 350Ω 25 RL = 350Ω t/s n( Y 80 )sn L AL ( S 20 o ED 70 EM g NOITAGAPORP 6500 ttPPLHHL IT LLAF ,ESIR – 1150 tr ic Gate O – t P 40 t ,tfr 5 pto 30 tf c o 20 0 u -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 p l e TA – AMBIENT TEMPERATURE (˚C) TA – AMBIENT TEMPERATURE (˚C) r s 7 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Typical Performance Curves (Continued) P L 0 6 Fig. 9 Low Level Output Voltage vs. Ambient Temperature 2 N 0.6 3 )V( EGA 0.5 VIIOFC ==C 15=3m 3mA.3AV .3V D TL u OV 0.4 a T l U C P T h UO 0.3 a L n E n V EL 0.2 el W H O L – 0.1 ig L h VO S p 0.0 e -40 -20 0 20 40 60 80 100 e d TA – AMBIENT TEMPERATURE (˚C) - 1 0 M B i t / s L o g i c G a t e O p t o c o u p l e r s 8 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Test Circuits P L 0 6 Fig. 10 Test Circuit and Waveforms for t , t t and t PLH PHL, r f 2 N PZuOls =e 5G0e Ωn. ≤3mm spacing I F = 7.5 mA 3.3 tf = tr = 5 ns Dual Channel +3.3V Input I F = 3.75 mA V IF (I F ) D 1 VCC 8 t t u PHL PLH a Input RL Output VO Output l Monitoring 2 7 Monitoring (V ) C Node 0.1µF Node O 1.5 V h a 3 6 Bypass n RM 4 5 CL* Output 90% ne GND (VO ) 10% l H i t t g f r h S p e e d - 1 0 M Fig. 11 Test Circuit and Waveforms for Common Mode Transient Immunity B IF ≤3mm spacing it/ s Dual Channel L B o 1 VCC 8 +3.3V g A i c RL Output VO 2 7 Monitoring G VFF 0.1µF Node at e 3 6 Bypass O GND p 4 5 t o c VCM o u + – p Pulse l Generator e ZO = 50 Ω rs VCM 0V Peak 3.3V CMH Switching Pos. (A), I = 0 F VO VO (Min) VO (Max) Switching Pos. (B), I F = 7.5 mA VO 0.5 V CML 9 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Footprint P L 0 8-Pin Small Outline 6 2 N 0.024 (0.61) 3 . 3 V D 0.060 (1.52) u a l 0.275 (6.99) C h 0.155 (3.94) a n n e l H i g h S 0.050 (1.27) p e e d - 1 0 M B i t / s L o g i c G a t e O p t o c o u p l e r s 10 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Ordering Information P L 0 Option Order Entry Identifier Description 6 2 No Suffix HCPL062N Shipped in tubes (50 units per tube) N R1 HCPL062NR1 Tape and Reel (500 units per reel) 3 . 3 R2 HCPL062NR2 Tape and Reel (2500 units per reel) V D u a Marking Information l C h 1 a n n e l H 62N 2 i g h S X YY S 5 p e e d - 1 0 M B 3 4 i t / s L o g Definitions i c 1 Fairchild logo G a 2 Device number t e 3 One digit year code, e.g., ‘3’ O p 4 Two digit work week ranging from ‘01’ to ‘53’ t o 5 Assembly package code c o u p l e r s 11 www.fairchildsemi.com HCPL062N Rev. 1.0.0

H C Carrier Tape Specification P L 0 8.0 ± 0.10 6 2 3.50 ± 0.20 N 2.0 ± 0.05 Ø1.5 MIN 3 . 3 0.30 MAX 4.0 ± 0.10 1.75 ± 0.10 V D u a l C 5.5 ± 0.05 h a 8.3 ± 0.10 12.0 ± 0.3 nn 5.20 ± 0.20 e l H i g h S 0.1 MAX 6.40 ± 0.20 Ø1.5 ± 0.1/-0 p e e User Direction of Feed d - 1 0 M Reflow Profile B i t / 300 s 260°C L 280 o g 260 ic >245°C = 42 Sec G 240 a t 220 e O 200 p t o 180 c Time above o 160 183°C = 90 Sec u °C p 140 le r s 120 100 1.822°C/Sec Ramp up rate 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) 12 www.fairchildsemi.com HCPL062N Rev. 1.0.0

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